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23 条记录 (耗时 0.026 秒)

    FILTER, SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD
    14.
    发明申请
    FILTER, SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD 审中-公开
    过滤器，基板处理装置和基板处理方法

    公开(公告)号：US20090317980A1

    公开(公告)日：2009-12-24

    申请号：US12548814

    申请日：2009-08-27

    申请人： Hiroyasu Iimori ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Yoshihiro Ogawa

    发明人： Hiroyasu Iimori ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Yoshihiro Ogawa

    IPC分类号： H01L21/306

    CPC分类号： H01L21/67086 ,  H01L21/30604 ,  H01L21/31111

    摘要： A filter connectable to an external circulating system, the circulating system being included by a substrate treatment apparatus which etches a substrate with an H3PO4 solution, the filter includes:a chemical feeding port which permits feed of H3PO4 solution containing particles deposited due to etching of a substrate;an H2O adding port which permits the addition of H2O;a filter film which removes the particles from the H3PO4 solution whose heat distribution is made ununiform by the addition of H2O; anda protection member which is disposed between the H2O adding port and the filter film and which protects the filter film from bumping of the H3PO4 solution that is causable by the addition of H2O.

    摘要翻译： 一种可连接到外部循环系统的过滤器，该循环系统由用H 3 PO 4溶液蚀刻衬底的衬底处理设备包括，该过滤器包括：化学物质进料口，其允许含有由于蚀刻所沉积的颗粒的H 3 PO 4溶液进料 基质; 一个允许加入H 2 O的H 2 O加入口; 通过加入H 2 O使热分布不均匀的H 3 PO 4溶液除去颗粒的过滤膜; 以及保护构件，其设置在H 2 O添加口和过滤膜之间，并且保护过滤膜免于通过加入H 2 O引起的H 3 PO 4溶液的撞击。

    Filter, substrate treatment apparatus and substrate treatment method
    16.
    发明申请
    Filter, substrate treatment apparatus and substrate treatment method 审中-公开
    过滤器，基板处理装置及基板处理方法

    公开(公告)号：US20050211378A1

    公开(公告)日：2005-09-29

    申请号：US11076231

    申请日：2005-03-10

    申请人： Hiroyasu Iimori ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Yoshihiro Ogawa

    发明人： Hiroyasu Iimori ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Yoshihiro Ogawa

    IPC分类号： H01L21/306 ,  C23F1/00 ,  H01L21/00 ,  H01L21/311

    CPC分类号： H01L21/67086 ,  H01L21/30604 ,  H01L21/31111

    摘要： A filter connectable to an external circulating system, the circulating system being included by a substrate treatment apparatus which etches a substrate with an H3PO4 solution, the filter includes: a chemical feeding port which permits feed of H3PO4 solution containing particles deposited due to etching of a substrate; an H2O adding port which permits the addition of H2O; a filter film which removes the particles from the H3PO4 solution whose heat distribution is made ununiform by the addition of H2O; and a protection member which is disposed between the H2O adding port and the filter film and which protects the filter film from bumping of the H3PO4 solution that is causable by the addition of H2O.

    摘要翻译： 一种可连接到外部循环系统的过滤器，所述循环系统由用H 3 PO 4溶液蚀刻衬底的衬底处理设备包括，所述过滤器包括： 化学品供给口，其允许由于蚀刻基材而沉积的含有3个/ 3个PO 4的溶液的进料; 允许加入H 2 O的H 2 O 2添加口; 过滤膜，其通过添加H 2 O 2从热分布不均匀的H 3 PO 4 溶液中除去颗粒; 以及保护构件，其设置在H 2 O 2添加口和过滤膜之间，并且保护过滤膜免受H 3 PO 4加成口的冲击， / SUB溶液，其通过加入H 2 O 2可以引起。

    Etching method and apparatus for semiconductor wafers
    18.
    发明申请
    Etching method and apparatus for semiconductor wafers 审中-公开

    公开(公告)号：US20060255014A1

    公开(公告)日：2006-11-16

    申请号：US11490054

    申请日：2006-07-21

    申请人： Yoshihiro Ogawa ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hiroyasu Iimori

    发明人： Yoshihiro Ogawa ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hiroyasu Iimori

    IPC分类号： C03C15/00 ,  H01L21/302 ,  B44C1/22

    CPC分类号： H01L21/67248 ,  H01L21/31111 ,  H01L21/67086

    摘要： A method for etching semiconductor wafers in an etching apparatus including an etching bath filled with an etchant and capable of setting liquid temperature and process sequence, comprises selecting a predetermined etching program suitable for etching of the semiconductor wafer, counting the number of the semiconductor wafers to be charged in the etching bath before the etching, calculating a temperature drop of the etchant based on the counted number, setting the liquid temperature of the etchant to an initial temperature B obtained by adding the temperature drop of the etchant to a predetermined etching temperature A, charging the semiconductor wafers in the etching bath at a predetermined timing to etch the semiconductor wafers, and setting the liquid temperature at the predetermined etching temperature A, immediately before or after the liquid temperature reaches the initial temperature B.

    SEMICONDUCTOR SUBSTRATE CLEANING METHOD USING BUBBLE/CHEMICAL MIXED CLEANING LIQUID
    19.
    发明申请
    SEMICONDUCTOR SUBSTRATE CLEANING METHOD USING BUBBLE/CHEMICAL MIXED CLEANING LIQUID 审中-公开
    使用泡沫/化学混合清洗液的半导体基板清洗方法

    公开(公告)号：US20110088731A1

    公开(公告)日：2011-04-21

    申请号：US12978933

    申请日：2010-12-27

    申请人： Hiroshi TOMITA ,  Hiroyasu Iimori ,  Hiroaki Yamada ,  Minako Inukai

    发明人： Hiroshi TOMITA ,  Hiroyasu Iimori ,  Hiroaki Yamada ,  Minako Inukai

    IPC分类号： B08B3/00 ,  B08B3/02

    CPC分类号： H01L21/02057 ,  B08B3/10 ,  B08B3/12 ,  C11D3/0052 ,  C11D11/0047 ,  H01L21/02052 ,  H01L21/67057

    摘要： A method has been disclosed which cleans a semiconductor substrate using a cleaning liquid produced by mixing bubbles of a gas into an acid solution in which the gas has been dissolved to the saturated concentration and which brings the zeta potentials of the semiconductor substrate and adsorbed particles into the negative region by the introduction of an interfacial active agent. Alternatively, a semiconductor substrate is cleaned using a cleaning liquid produced by mixing bubbles of a gas into an alkaline solution in which the gas has been dissolved to the saturated concentration and whose pH is 9 or more.

    摘要翻译： 已经公开了一种方法，其使用通过将气体的气泡混合到其中已经溶解气体的酸溶液达到饱和浓度并且将半导体衬底和吸附的颗粒的ζ电位引入的清洗液清洗半导体衬底 通过引入界面活性剂的负面区域。 或者，使用将气体的气泡混合到其中溶解有气体至饱和浓度并且pH为9以上的碱性溶液中制备的清洗液来清洗半导体衬底。

    Manufacturing method of semiconductor device using etching solution
    20.
    发明授权
    Manufacturing method of semiconductor device using etching solution 失效
    使用蚀刻溶液的半导体器件的制造方法

    公开(公告)号：US07727871B2

    公开(公告)日：2010-06-01

    申请号：US11702575

    申请日：2007-02-06

    申请人： Hiroshi Tomita ,  Hiroyasu Iimori

    发明人： Hiroshi Tomita ,  Hiroyasu Iimori

    IPC分类号： H01L21/3205 ,  H01L21/4763

    CPC分类号： H01L21/02071 ,  C09K13/08 ,  H01L21/0206 ,  H01L21/31111

    摘要： This disclosure concerns a manufacturing method of a semiconductor device comprising an etching process using an etching solution having ozone dissolved by 10 ppm or more into a liquid containing H2SO4 by 86 wt % to 97.9 wt %, HF by 0.1 wt % to 10 wt %, and H2O by 2 wt % to 4 wt %.

    摘要翻译： 本公开涉及一种半导体器件的制造方法，其包括使用具有溶解10ppm或更多的臭氧的蚀刻溶液的腐蚀工艺，所述蚀刻溶液含有包含H 2 SO 4的液体为86重量％至97.9重量％，HF为0.1重量％至10重量％ 和H 2 O 2重量％至4重量％。