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20 条记录 (耗时 0.023 秒)

    Acoustic surface wave device
    13.
    发明授权
    Acoustic surface wave device 失效
    声表面波装置

    公开(公告)号：US6037698A

    公开(公告)日：2000-03-14

    申请号：US615144

    申请日：1996-03-14

    申请人： Masanori Ueda ,  Yoshiro Fujiwara ,  Takumi Kooriike

    发明人： Masanori Ueda ,  Yoshiro Fujiwara ,  Takumi Kooriike

    IPC分类号： H03H9/25 ,  H03H9/05 ,  H03H9/64 ,  H03H9/10

    CPC分类号： H03H9/1071 ,  H03H9/058 ,  H03H9/64 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/16195

    摘要： This invention relates to an acoustic surface wave device suitably used in a high-frequency circuit, in which high attenuation characteristics are provided.The present invention includes an acoustic surface wave element, a ceramic package having a ceramic substrate of a multi-layer structure, the ceramic substrate having a die-attach portion on which the acoustic surface wave element is mounted, the ceramic package having an input terminal and an output terminal connected to the acoustic surface wave element, the ceramic package having an opening located above the ceramic substrate, each of the input terminal and the output terminal having a ground terminal, and a metallic cap sealing the opening of the ceramic package. The metallic cap is electrically connected to one of the ground terminal of the input terminal and the ground terminal of the output terminal.

    摘要翻译： 本发明涉及适用于提供高衰减特性的高频电路中的声表面波装置。 本发明包括声表面波元件，具有多层结构的陶瓷基片的陶瓷封装体，陶瓷基片具有安装声表面波元件的管芯附着部分，陶瓷封装具有输入端子 以及连接到所述声表面波元件的输出端子，所述陶瓷封装具有位于所述陶瓷基板上方的开口，所述输入端子和所述输出端子中的每一个具有接地端子，以及密封所述陶瓷封装的开口的金属盖。 金属盖电连接到输入端子的接地端子和输出端子的接地端子之间。

    Acoustic surface wave element
    14.
    发明授权
    Acoustic surface wave element 失效
    声表面波元件

    公开(公告)号：US4978879A

    公开(公告)日：1990-12-18

    申请号：US384829

    申请日：1989-07-25

    申请人： Kiyoshi Satoh ,  Yoshiro Fujiwara ,  Kazushi Hashimoto

    发明人： Kiyoshi Satoh ,  Yoshiro Fujiwara ,  Kazushi Hashimoto

    IPC分类号： H03H9/02

    CPC分类号： H03H9/02834 ,  H03H9/02559

    摘要： An acoustic surface wave element having an oscillation frequency stable against temperature changes, and a wide range of oscillation frequency adjustment, is provided by an acoustic surface wave element comprising: a substrate of a 36.degree. rotated Y-cut single crystal lithium tantalate having X, Y and Z crystal axes and a top surface and side walls; electrodes formed on the top surface of the substrate such that an acoustic surface wave is propagated in a direction of the X-axis of the substrate and an oscillation of the acoustic surface wave occurs at a predetermined frequency, the electrodes having a thickness equal to 1 to 4% of a wavelength of the acoustic surface wave at the oscillation; and a plasma CVD-deposited layer of silicon dioxide covering the electrodes and the substrate, the silicon dioxide layer having a refractive index of 1.445 to 1.486 and a thickness equal to 16 to 26% of the wavelength of the acoustic surface wave at the oscillation.

    Surface acoustic wave filter device on 40.degree. to 42.degree. rotated Y-X LITAO.sub.3
    19.
    发明授权
    Surface acoustic wave filter device on 40.degree. to 42.degree. rotated Y-X LITAO.sub.3 失效
    表面声波滤波器装置在40°〜42°旋转Y-X LITAO3

    公开(公告)号：US5874869A

    公开(公告)日：1999-02-23

    申请号：US925732

    申请日：1997-09-09

    申请人： Masanori Ueda ,  Osamu Kawachi ,  Gou Endoh ,  Yoshiro Fujiwara

    发明人： Masanori Ueda ,  Osamu Kawachi ,  Gou Endoh ,  Yoshiro Fujiwara

    IPC分类号： H01L41/09 ,  H03H9/00 ,  H03H9/02 ,  H03H9/145 ,  H03H9/25 ,  H03H9/64

    CPC分类号： H03H9/6483 ,  H03H9/0042 ,  H03H9/02559 ,  H03H9/6436 ,  H03H9/6469 ,  H03H2250/00

    摘要： A surface acoustic wave device includes a piezoelectric substrate of a LiTaO.sub.3 single crystal, the crystal having X, Y and Z axes and a cut plane. The X axis of the crystal is oriented in a direction of propagation of surface acoustic waves. The cut plane of the crystal is rotated around the X axis at a rotated angle from the Y axis to the Z axis, the rotated angle being in a range between 40.degree. and 42.degree.. A pair of reflectors are formed on the substrate and aligned in a row in the direction of propagation. Interdigital transducers are formed on the substrate and aligned in the row in the direction of propagation, the interdigital transducers interposed between the reflectors, each interdigital transducer having pairs of mutually opposed primary electrode fingers and secondary electrode fingers, the interdigital transducers including at least a front transducer, a middle transducer and a rear transducer aligned in the row in the direction of propagation. In the device, a ratio of the number of pairs of the electrode fingers in one of the front transducer and the rear transducer to the number of pairs of the electrode fingers in the middle transducer is in a range between 55% and 80%.

    摘要翻译： 表面声波装置包括LiTaO3单晶的压电基片，具有X，Y和Z轴的晶体和切割平面。 晶体的X轴在表面声波的传播方向上取向。 晶体的切割面以X轴旋转，从Y轴向Z轴旋转，旋转角度在40°〜42°的范围内。 一对反射器形成在基板上并沿着传播方向成一排排列。 叉指换能器形成在基板上并沿着传播方向排列成行，插入在反射器之间的叉指换能器，每个叉指换能器具有成对的相互对置的主电极指和辅助电极指，叉指换能器至少包括前部 传感器，中间传感器和后传感器在传播方向上排成一行。 在该装置中，前换能器和后换能器中的一个中的电极指的对数与中间换能器中的电极指对数的比率在55％至80％的范围内。

    Surface acoustic wave filter
    20.
    发明授权
    Surface acoustic wave filter 失效
    表面声波滤波器

    公开(公告)号：US4451805A

    公开(公告)日：1984-05-29

    申请号：US371502

    申请日：1982-04-23

    申请人： Masaaki Ono ,  Yoshiro Fujiwara ,  Masanobu Yanagisawa

    发明人： Masaaki Ono ,  Yoshiro Fujiwara ,  Masanobu Yanagisawa

    IPC分类号： H03H9/145 ,  H03H3/08 ,  H03H9/02 ,  H03H9/42 ,  H03H9/64 ,  H03H9/72 ,  H03H9/76

    CPC分类号： H03H9/72 ,  H03H9/02968 ,  H03H9/6403 ,  H03H9/643 ,  H03H9/76

    摘要： A surface acoustic wave filter which comprises a substrate of piezoelectric material and a multistrip coupler. The multistrip coupler comprises a plurality of parallel conductive strips formed on the substrate; at least one input transducer is disposed on one side of the multistrip coupler, and at least one output transducer is disposed on the other side of the multistrip coupler. The surface acoustic wave filter is characterized in that a part of the middle portion of each of the conductive strips of the multistrip coupler is made of a photoconductive material.

    摘要翻译： 一种表面声波滤波器，包括压电材料的基片和多波束耦合器。 所述多段耦合器包括形成在所述衬底上的多个平行导电条; 至少一个输入换能器设置在多段耦合器的一侧上，并且至少一个输出换能器设置在多段耦合器的另一侧上。 表面声波滤波器的特征在于，多皮耦合器的每个导电条的中间部分的一部分由光电导材料制成。