MONOLITHIC INTEGRATED DEVICE
    1.
    发明申请

    公开(公告)号:US20180151622A1

    公开(公告)日:2018-05-31

    申请号:US15494272

    申请日:2017-04-21

    摘要: Monolithic integrated device having an architecture that allows an acoustic device to transduce either surface acoustic waves or bulk acoustic waves, comprising: a substrate layer being the base of the device; an inter-layer dielectric disposed on top of the substrate layer; an electronic circuitry substantially formed in the inter-layer dielectric and supported by the substrate layer, the electronic circuitry comprises a plurality of metal layers; and a piezoelectric layer being sandwiched between a top electrode and a bottom electrode within the inter-layer dielectric. The top electrode is an upper metal layer belonging to the electronic circuitry and the bottom electrode is a lower metal layer belonging to the electronic circuitry. To transduce the bulk acoustic waves, the inter-layer dielectric is formed with a top cavity above the top electrode and a bottom cavity below the bottom electrode.

    Surface mount type quartz crystal device

    公开(公告)号:US09876157B2

    公开(公告)日:2018-01-23

    申请号:US14331232

    申请日:2014-07-15

    摘要: A surface mount type quartz crystal device according to a first aspect of the disclosure includes a ceramic package, a pedestal blank, a quartz-crystal vibrating piece. The pedestal blank is placed within the ceramic package via a conductive adhesive. The quartz-crystal vibrating piece is placed on the pedestal blank. The conductive adhesive is formed along an outer peripheral side of the pedestal blank so as to avoid overlap with the excitation electrode viewed in a normal direction of the excitation electrode. The pedestal blank is formed to avoid a region where a distance from the quartz-crystal vibrating piece is equal to or smaller than a size of a clearance between the pedestal blank and the quartz-crystal vibrating piece at the outer peripheral side, in a region where the excitation electrode faces at the pedestal blank side viewed in the normal direction.

    Temperature compensated compound resonator
    5.
    发明申请
    Temperature compensated compound resonator 有权
    温度补偿复合谐振器

    公开(公告)号:US20160099702A1

    公开(公告)日:2016-04-07

    申请号:US14874514

    申请日:2015-10-05

    IPC分类号: H03H9/02 H03H9/05 H03H9/24

    摘要: The invention concerns microelectromechanical resonators. In particular, the invention provides a resonator comprising a support structure, a doped semiconductor resonator suspended to the support structure by at least one anchor, and actuator for exciting resonance into the resonator. According to the invention, the resonator comprises a base portion and at least one protrusion extending outward from the base portion and is excitable by said actuator into a compound resonance mode having temperature coefficient of frequency (TCF) characteristics, which are contributed by both the base portion and the at least one protrusion. The invention enables simple resonators, which are very well temperature compensated over a wide temperature range.

    摘要翻译: 本发明涉及微机电谐振器。 特别地,本发明提供了一种谐振器,其包括支撑结构,通过至少一个锚悬置到支撑结构的掺杂半导体谐振器,以及用于激励谐振到谐振器的致动器。 根据本发明,谐振器包括基部和从基部向外延伸的至少一个突起,并且可由所述致动器激发成具有频率(TCF)特性温度系数的复合谐振模式,这两者均由基极 部分和所述至少一个突起。 本发明实现了简单的谐振器,其在宽的温度范围内被很好的温度补偿。

    Piezoelectric Oscillation Element and Piezoelectric Oscillation Component Using the Same
    8.
    发明申请
    Piezoelectric Oscillation Element and Piezoelectric Oscillation Component Using the Same 失效
    压电振荡元件和使用它的压电振荡元件

    公开(公告)号:US20090200900A1

    公开(公告)日:2009-08-13

    申请号:US11814797

    申请日:2006-01-25

    IPC分类号: H01L41/047

    摘要: A piezoelectric oscillation element (1) comprising a piezoelectric substrate (10), a first conductor film (21) formed on one main surface of the piezoelectric substrate (10), a second conductor film (22) formed on the other main surface, and grounding terminals (31a, 31b) formed on the side surfaces of the piezoelectric substrate (10). Specified capacitances are respectively formed between the first and second conductor films (21, 22) formed on the main surfaces of the piezoelectric substrate (10) and the grounding terminals (31a, 31b) formed on the side surfaces thereof. Larger capacitances can be formed than when electrodes are disposed on the same main surface in proximity of each other to form a capacitance, whereby no adverse effect is given to thickness vibration occurring between the first and second conductor films (21, 22).

    摘要翻译: 一种压电振动元件(1),包括压电基板(10),形成在压电基板(10)的一个主表面上的第一导体膜(21),形成在另一主表面上的第二导体膜(22) 形成在压电基板(10)的侧面上的接地端子(31a,31b)。 分别在形成在压电基板(10)的主表面上的第一和第二导体膜(21,22)和形成在其侧表面上的接地端子(31a,31b)之间形成指定电容。 可以形成比在彼此靠近的电极设置在同一主表面上以形成电容的电容量大,从而不会对在第一和第二导体膜(21,22)之间产生的厚度振动产生不利影响。