公开(公告)号：US08180184B2

公开(公告)日：2012-05-15

申请号：US12504607

申请日：2009-07-16

Applicant: Jeong Woo Park ,  Jongbum You ,  Gyungock Kim

Inventor： Jeong Woo Park ,  Jongbum You ,  Gyungock Kim

IPC: G02F1/035

CPC classification number: G02F1/025 ,  G02F2001/0156 ,  G02F2201/063 ,  G02F2201/12 ,  G02F2202/105 ,  G02F2202/32

Abstract: An absorption modulator is provided. The absorption modulator includes a substrate, an insulation layer disposed on the substrate, and a waveguide having a P-I-N diode structure on the insulation layer. Absorptance of an intrinsic region in the P-I-N diode structure is varied when modulating light inputted to the waveguide. The absorption modulator obtains the improved characteristics, such as high speed, low power consumption, and small size, because it greatly reduces the cross-sectional area of the P-I-N diode structure.

Abstract translation: 提供吸收调制器。 吸收调制器包括衬底，设置在衬底上的绝缘层和在绝缘层上具有P-I-N二极管结构的波导。 当调制输入到波导的光时，P-I-N二极管结构中的本征区域的吸收变化。 吸收调制器由于大大降低了P-I-N二极管结构的截面面积而获得了高速，低功耗，小尺寸等改进的特性。

公开(公告)号：US20110135265A1

公开(公告)日：2011-06-09

申请号：US12842287

申请日：2010-07-23

Applicant: Sahnggi PARK ,  Kap-Joong Kim ,  Gyungock Kim

Inventor： Sahnggi PARK ,  Kap-Joong Kim ,  Gyungock Kim

IPC: G02B6/10 ,  C23F1/00

CPC classification number: G02B6/13

Abstract: Provided are a method of forming a waveguide facet and a photonics device using the method. The method includes forming at least one optical device die including waveguides on a substrate, forming at least one trench in a lower surface of the substrate, and cleaving the substrate to form facets of the waveguides over the trench. The trench is formed along a direction crossing the waveguides under the waveguides.

Abstract translation: 提供了使用该方法形成波导面和光子器件的方法。 所述方法包括在衬底上形成至少一个包括波导的光学器件裸片，在衬底的下表面中形成至少一个沟槽，并且切割衬底以在沟槽上形成波导的刻面。 沿着与波导下方的波导交叉的方向形成沟槽。

公开(公告)号：US20100193824A1

公开(公告)日：2010-08-05

申请号：US12760366

申请日：2010-04-14

Applicant: Hyun Tak KIM ,  Doo Hyeb Youn ,  Byung Gyu Chae ,  Kwang Yong Kang ,  Yong Sik Lim ,  Gyungock Kim ,  Sunglyul Maeng ,  Seong Hyun Kim

Inventor： Hyun Tak KIM ,  Doo Hyeb Youn ,  Byung Gyu Chae ,  Kwang Yong Kang ,  Yong Sik Lim ,  Gyungock Kim ,  Sunglyul Maeng ,  Seong Hyun Kim

IPC: H01L33/00 ,  H01L33/40

CPC classification number: H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148 ,  H01L45/1625

Abstract: Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-terminal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2 eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer.

Abstract translation: 提供了使用突变MIT半导体材料层的2端子半导体器件。 2端子半导体器件包括第一电极层，具有小于2eV的能隙的突变MIT半导体有机或无机材料层和设置在第一电极层上的孔级中的孔，以及设置在第二电极层上的第二电极层 突变MIT半导体有机或无机材料层。 通过施加在第一电极层和第二电极层之间的场，在突变MIT半导体材料层中产生突变MIT。

公开(公告)号：US07760974B2

公开(公告)日：2010-07-20

申请号：US11828418

申请日：2007-07-26

Applicant: Jong Moo Lee ,  Duk Jun Kim ,  Junghyung Pyo ,  Gyungock Kim

Inventor： Jong Moo Lee ,  Duk Jun Kim ,  Junghyung Pyo ,  Gyungock Kim

IPC: G02B6/34

CPC classification number: G02B6/12028 ,  G02B6/12011

Abstract: Provided is a silicon array waveguide grating (AWG) device comprising a silicon array waveguide in which a plurality of optical waveguides formed of a lower cladding layer, a silicon core, and an upper cladding layer are arranged, wherein the variation of the refractive index of the silicon core is positive, and the upper cladding layer is formed of polymer, the variation of refractive index of which according to temperature is negative, which is opposite to the silicon core, and the cross-section of the silicon core varies between different areas to adjust the variation of the effective refractive index of the optical waveguide according to temperature.

Abstract translation: 提供了一种硅阵列波导光栅（AWG）器件，其包括硅阵列波导，其中布置由下包层，硅芯和上包层形成的多个光波导，其中折射率的变化 硅芯是正的，并且上包层由聚合物形成，其折射率随着温度的变化是负的，其与硅芯相反，并且硅芯的横截面在不同的区域之间变化 以根据温度调节光波导的有效折射率的变化。

公开(公告)号：US20100110546A1

公开(公告)日：2010-05-06

申请号：US12541710

申请日：2009-08-14

Applicant: Sahnggi PARK ,  Kap-Joong Kim ,  In-Gyoo Kim ,  Gyungock Kim

Inventor： Sahnggi PARK ,  Kap-Joong Kim ,  In-Gyoo Kim ,  Gyungock Kim

IPC: G02B5/18

CPC classification number: G02B6/305 ,  G02B6/264 ,  G02B6/32

Abstract: Provided is a photonics device. The photonics device includes a distribution Bragg reflector (DBR), first and second waveguides disposed at both sides of the DBR, first lenses disposed between the DBR and the first waveguides, and second lenses disposed between the DBR and the second waveguides.

Abstract translation: 提供了一种光子器件。 光子器件包括分布布拉格反射器（DBR），布置在DBR的两侧的第一和第二波导，设置在DBR和第一波导之间的第一透镜以及设置在DBR和第二波导之间的第二透镜。

公开(公告)号：US07630602B2

公开(公告)日：2009-12-08

申请号：US11856498

申请日：2007-09-17

Applicant: Duk Jun Kim ,  Jong Moo Lee ,  Junghyung Pyo ,  Gyungock Kim

Inventor： Duk Jun Kim ,  Jong Moo Lee ,  Junghyung Pyo ,  Gyungock Kim

IPC: G02B6/34 ,  G02B6/10

CPC classification number: G02B6/12028 ,  G02B6/12011

Abstract: An optical filter module for wavelength multiplexing and demultiplexing and a method of manufacturing the same are provided. The optical filter module for wavelength multiplexing and demultiplexing includes: at least one or more input waveguides; an input-stage star coupler in the form of a slab waveguide connected to the input waveguides; array waveguide which is connected to the input-stage star coupler and in which a plurality of individual waveguides, each of which has an optical path having a predetermined length different to those of the other waveguides and has a heterogeneous waveguide interval formed of a material having a different refraction index from that of a core of the waveguides, are sequentially arranged; an output-stage star coupler in the form of a slab waveguide connected to the array waveguides; and at least one or more output waveguides connected to the output-stage star coupler. According to the optical filter module and the method of manufacturing the same, heterogeneous waveguide intervals having core materials different from those of conventional waveguides are introduced in predetermined areas of array waveguides, thereby reducing polarized light and temperature dependency and at the same time effectively removing optical coupling loss, which can occur at both ends of a heterogeneous waveguide interval, without an additional process of forming waveguides.

Abstract translation: 提供了一种用于波分复用和解复用的滤光器模块及其制造方法。 用于波长复用和解复用的滤光器模块包括：至少一个或多个输入波导; 输入级星形耦合器，其形式为连接到输入波导的平板波导; 阵列波导，其连接到输入级星形耦合器，并且其中多个单独的波导具有与其它波导的预定长度不同的预定长度的光路，并且具有由具有 依次布置与波导的芯的折射率不同的折射率; 输出级星形耦合器，其形式为连接到阵列波导的平板波导; 以及连接到输出级星形耦合器的至少一个或多个输出波导。 根据光滤波器模块及其制造方法，在阵列波导的预定区域中引入具有与常规波导不同的芯材料的异质波导间隔，从而降低偏振光和温度依赖性，同时有效地去除光 耦合损耗，其可以发生在异质波导间隔的两端，而没有形成波导的附加工艺。

公开(公告)号：US20060011942A1

公开(公告)日：2006-01-19

申请号：US11011878

申请日：2004-12-13

Applicant: Hyun Kim ,  Doo Youn ,  Byung Chae ,  Kwang Kang ,  Yong Lim ,  Gyungock Kim ,  Sunglyul Maeng ,  Seong Kim

Inventor： Hyun Kim ,  Doo Youn ,  Byung Chae ,  Kwang Kang ,  Yong Lim ,  Gyungock Kim ,  Sunglyul Maeng ,  Seong Kim

IPC: H01L31/0328 ,  H01L21/8232

CPC classification number: H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148 ,  H01L45/1625

Abstract: Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-terminal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer.

Abstract translation: 提供了使用突变MIT半导体材料层的2端子半导体器件。 2端子半导体器件包括第一电极层，具有小于2eV的能隙的突变MIT半导体有机或无机材料层和设置在第一电极层上的空穴层中的孔，以及设置在突发上的第二电极层 MIT半导体有机或无机材料层。 通过施加在第一电极层和第二电极层之间的场，在突变MIT半导体材料层中产生突变MIT。

公开(公告)号：US09063302B2

公开(公告)日：2015-06-23

申请号：US13443843

申请日：2012-04-10

Applicant: Do Won Kim ,  Gyungock Kim

Inventor： Do Won Kim ,  Gyungock Kim

IPC: G02B6/36 ,  G02B6/38 ,  G02B6/42 ,  G02B6/12

CPC classification number: G02B6/3897 ,  G02B6/423 ,  G02B6/4249 ,  G02B6/4292 ,  G02B2006/12107

Abstract: Provided are an optical connector capable of improving optical alignment efficiency and an optical device having the same. The connector may include a body having a top surface and a bottom surface facing each other, through holes penetrating the body to connect the top and bottom surfaces, and alignment keys provided on at least side surface of the body to be parallel to the through holes.

Abstract translation: 提供能够提高光取向效率的光连接器和具有该光连接器的光学装置。 连接器可以包括具有顶表面和底表面彼此面对的主体，穿过穿过主体以连接顶表面和底表面的孔以及设置在主体的至少侧表面上以与通孔平行的对准键 。

公开(公告)号：US09025920B2

公开(公告)日：2015-05-05

申请号：US13620560

申请日：2012-09-14

Applicant: Do Won Kim ,  Gyungock Kim

Inventor： Do Won Kim ,  Gyungock Kim

IPC: G02B6/26 ,  G02B6/42 ,  G02B6/30 ,  G02B6/122

CPC classification number: G02B6/305 ,  G02B6/1228 ,  G02B2006/12061

Abstract: Provided are optical coupling devices and silicon photonics chips having the same. the optical coupling device may include a lower layer having a first region and a second region, a first core layer disposed on the lower layer, the first core layer including first and second waveguides disposed on the first and second regions, respectively, a clad layer covering the first waveguide, and a second core layer interposed between the clad layer and the lower layer to cover the second waveguide. The second waveguide has a width decreasing with increasing distance from the first region and a vertical thickness greater than that of the first waveguide.

Abstract translation: 提供了具有其的光耦合器件和硅光子芯片。 光耦合装置可以包括具有第一区域和第二区域的下层，设置在下层上的第一芯层，第一芯层分别包括设置在第一和第二区域上的第一和第二波导，包层 覆盖第一波导，以及插入在包层和下层之间以覆盖第二波导的第二芯层。 第二波导的宽度随着距离第一区域的距离增加而减小，并且垂直厚度大于第一波导的垂直厚度。

公开(公告)号：US08644657B2

公开(公告)日：2014-02-04

申请号：US13175567

申请日：2011-07-01

Applicant: Sahnggi Park ,  Gyungock Kim

Inventor： Sahnggi Park ,  Gyungock Kim

IPC: G02B6/26 ,  G02B6/42

CPC classification number: H01P7/088 ,  G02F1/0147 ,  G02F1/3132 ,  H01P1/2135

Abstract: Provided is a method of tuning a resonance wavelength of a ring resonator. The method of tuning the resonance wavelength of a ring resonator includes preparing a ring resonator which contains a ring waveguide and a dielectric layer covering the ring waveguide, and heating the ring resonator to induce a refractive index phase change of the dielectric layer.

Abstract translation: 提供了调谐环形谐振器的谐振波长的方法。 调谐环形谐振器的谐振波长的方法包括制备环形谐振器，该环形谐振器包含环形波导和覆盖环形波导的电介质层，并且加热环形谐振器以引起电介质层的折射率相位变化。