Abstract:
A resistive memory device and a method for manufacturing the same are disclosed. The resistive memory device includes a lower electrode formed over a substrate, a resistive layer disposed over the lower electrode, an upper electrode formed over the resistive layer, and an oxygen-diffusion barrier pattern provided in an interface between the resistive layer and the upper electrode. The above-described resistive memory device and a method for manufacturing the same may prevent the out diffusion of oxygen in the interface of the upper electrode to avoid set-stuck phenomenon occurring upon the operation of the resistive memory device, thereby improving the endurance of the resistive memory device.
Abstract:
A switching device with a solid electrolyte layer includes: a substrate; a lower electrode formed over the substrate; a solid electrolyte layer disposed over the lower electrode; and an upper electrode formed over the solid electrolyte layer.
Abstract:
A water treatment apparatus includes a plurality of meshed tubes made of synthetic yarn and provided with cilia; a plurality of tube stack cages containing the meshed tubes; and an aeration diffuser positioned between the tube stack cages and configured to provide air so that to-be-treated influent water moves to the tube stack cages. The hollow interior of the filter media, i.e. meshed tubes, enables water to move in any direction, and the high porosity maximizes the area for filtering of suspended solids and attachment of microorganisms. The resulting efficiency of removal of suspended solids and soluble organic material is far greater than conventional methods. Arrangement of diffusers in the middle of the reaction tank and between the tube stack cages and aeration by them result in perfect mixing in the reaction tank. The load of suspended solids and soluble organic materials is evenly distributed over the entire filer media.
Abstract:
A resistive memory device includes an insulation layer over a substrate, a nanowire penetrating the insulation layer, a resistive layer formed over the insulation layer and contacting with the nanowire, and an upper electrode formed over the resistive layer.
Abstract:
An etchant composition for etching a transparent electrode is provided, the etchant composition includes an inorganic acid, an ammonium (NH4+)-containing compound, a cyclic amine compound, and the remaining amount of water.
Abstract:
An etchant composition for etching a transparent electrode is provided, the etchant composition includes an inorganic acid, an ammonium (NH4+)-containing compound, a cyclic amine compound, and the remaining amount of water.
Abstract:
A switching device with a solid electrolyte layer includes: a substrate; a lower electrode formed over the substrate; a solid electrolyte layer disposed over the lower electrode; and an upper electrode formed over the solid electrolyte layer.
Abstract:
An apparatus and method for reducing power consumption of a portable terminal are provided. More particularly, an apparatus and method for reducing power consumption generated in an idle state in order to solve a power consumption problem in a portable terminal are provided. The apparatus includes a state determination unit which is configured independently from an application processor for controlling applications and which wakes up when entering an idle mode to allow the application processor to sleep, and thereafter determines a state of the portable terminal, and if it is determined that the portable terminal escapes from the idle mode, allows the application processor to wake up.
Abstract:
A resistive memory device includes a plurality of resistive units, each resistive unit including: a lower electrode formed over a substrate; a resistive layer formed over the lower electrode; and an upper electrode formed over the resistive layer, wherein edge parts of the lower and upper electrodes, which come in contact with the resistive layer, is formed with a rounding shape.
Abstract:
A resistive memory device includes a lower electrode formed on a substrate, a resistive layer formed on the lower electrode, and an upper electrode on the resistive layer, wherein a lower portion of the upper electrode is narrower than an upper portion of the upper electrode.