公开(公告)号：US06924503B2

公开(公告)日：2005-08-02

申请号：US10340710

申请日：2003-01-13

申请人： Horng-Long Cheng ,  Yu-Wu Wang ,  Ching-Hsun Chao ,  Cheng-Chung Lee ,  Chai-Yuan Sheu

发明人： Horng-Long Cheng ,  Yu-Wu Wang ,  Ching-Hsun Chao ,  Cheng-Chung Lee ,  Chai-Yuan Sheu

IPC分类号： H05B33/10 ,  G09F9/30 ,  H01L27/15 ,  H01L27/28 ,  H01L27/32 ,  H01L29/786 ,  H01L35/24 ,  H01L51/00 ,  H01L51/05 ,  H01L51/50 ,  H01L51/56 ,  H05B33/14 ,  H05B33/26

CPC分类号： H01L27/3274 ,  H01L51/0541

摘要： An organic integrated device for thin film transistor and light emitting diode. The organic integrated device of the present invention includes a top-gate organic thin film transistor (top-gate OTFT) and an organic light emitting diode (OLED), both formed on the same substrate. In the organic integrated device, some layers can be commonly used by both OTFT and OLED, and some layers can be made of the same material and formed in the same course, which simplifies the entire process.

摘要翻译： 一种用于薄膜晶体管和发光二极管的有机集成器件。 本发明的有机集成器件包括形成在同一衬底上的顶栅有机薄膜晶体管（顶栅OTFT）和有机发光二极管（OLED）。 在有机集成器件中，OTFT和OLED都可以通常使用一些层，一些层可以由相同的材料制成，并且在相同的过程中形成，这简化了整个过程。

公开(公告)号：US20050087745A1

公开(公告)日：2005-04-28

申请号：US10990210

申请日：2004-11-16

申请人： Horng-Long Cheng ,  Wei-Yang Chou ,  Yih-Jun Wong ,  Yu-Wu Wang ,  Cheng-Chung Lee

发明人： Horng-Long Cheng ,  Wei-Yang Chou ,  Yih-Jun Wong ,  Yu-Wu Wang ,  Cheng-Chung Lee

IPC分类号： G02F1/1335 ,  G02F1/1337 ,  G02F1/1368 ,  H01L21/00 ,  H01L21/336 ,  H01L27/28 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05 ,  H01L29/04

CPC分类号： H01L51/0541 ,  G02F1/133555 ,  G02F1/13378 ,  G02F1/1368 ,  H01L27/28 ,  H01L51/0545

摘要： The invention provides an organic thin film transistor array substrate, comprising: a substrate, having a liquid crystal display area and an organic thin film transistor area; a pixel electrode, formed on the substrate in the LCD area; a first alignment film, formed on the pixel electrode; a second alignment film, formed on the substrate in the OTFT area; an organic semiconductor layer, formed on the second alignment film, wherein the organic semiconductor layer is aligned along the direction of the second alignment film; and a gate, a source and a drain, formed in the OTFT area, wherein the source and the drain are in contact with the organic semiconductor layer and a channel is formed between the source and the drain.

摘要翻译： 本发明提供一种有机薄膜晶体管阵列基板，包括：具有液晶显示区域和有机薄膜晶体管区域的基板; 形成在LCD面上的基板上的像素电极; 形成在像素电极上的第一取向膜; 形成在OTFT区域的基板上的第二取向膜; 形成在所述第二取向膜上的有机半导体层，其中所述有机半导体层沿着所述第二取向膜的方向排列; 以及形成在OTFT区域中的栅极，源极和漏极，其中源极和漏极与有机半导体层接触并且在源极和漏极之间形成沟道。

公开(公告)号：US07026644B2

公开(公告)日：2006-04-11

申请号：US10990210

申请日：2004-11-16

申请人： Horng-Long Cheng ,  Wei-Yang Chou ,  Yih-Jun Wong ,  Yu-Wu Wang ,  Cheng-Chung Lee

发明人： Horng-Long Cheng ,  Wei-Yang Chou ,  Yih-Jun Wong ,  Yu-Wu Wang ,  Cheng-Chung Lee

IPC分类号： H01L29/004

CPC分类号： H01L51/0541 ,  G02F1/133555 ,  G02F1/13378 ,  G02F1/1368 ,  H01L27/28 ,  H01L51/0545

摘要： The invention provides an organic thin film transistor array substrate, comprising: a substrate, having a liquid crystal display area and an organic thin film transistor area; a pixel electrode, formed on the substrate in the LCD area; a first alignment film, formed on the pixel electrode; a second alignment film, formed on the substrate in the OTFT area; an organic semiconductor layer, formed on the second alignment film, wherein the organic semiconductor layer is aligned along the direction of the second alignment film; and a gate, a source and a drain, formed in the OTFT area, wherein the source and the drain are in contact with the organic semiconductor layer and a channel is formed between the source and the drain.

摘要翻译： 本发明提供一种有机薄膜晶体管阵列基板，包括：具有液晶显示区域和有机薄膜晶体管区域的基板; 形成在LCD面上的基板上的像素电极; 形成在像素电极上的第一取向膜; 形成在OTFT区域的基板上的第二取向膜; 形成在所述第二取向膜上的有机半导体层，其中所述有机半导体层沿着所述第二取向膜的方向排列; 以及形成在OTFT区域中的栅极，源极和漏极，其中源极和漏极与有机半导体层接触并且在源极和漏极之间形成沟道。

公开(公告)号：US06872980B2

公开(公告)日：2005-03-29

申请号：US10637259

申请日：2003-08-08

申请人： Horng-Long Cheng ,  Wei-Yang Chou ,  Yih-Jun Wong ,  Yu-Wu Wang ,  Cheng-Chung Lee

发明人： Horng-Long Cheng ,  Wei-Yang Chou ,  Yih-Jun Wong ,  Yu-Wu Wang ,  Cheng-Chung Lee

IPC分类号： G02F1/1335 ,  G02F1/1337 ,  G02F1/1368 ,  H01L21/00 ,  H01L21/336 ,  H01L27/28 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05 ,  H01L31/036

CPC分类号： H01L51/0541 ,  G02F1/133555 ,  G02F1/13378 ,  G02F1/1368 ,  H01L27/28 ,  H01L51/0545

摘要： The invention provides an organic thin film transistor array substrate, comprising: a substrate, having a liquid crystal display area and an organic thin film transistor area; a pixel electrode, formed on the substrate in the LCD area; a first alignment film, formed on the pixel electrode; a second alignment film, formed on the substrate in the OTFT area; an organic semiconductor layer, formed on the second alignment film, wherein the organic semiconductor layer is aligned along the direction of the second alignment film; and a gate, a source and a drain, formed in the OTFT area, wherein the source and the drain are in contact with the organic semiconductor layer and a channel is formed between the source and the drain.

摘要翻译： 本发明提供一种有机薄膜晶体管阵列基板，包括：具有液晶显示区域和有机薄膜晶体管区域的基板; 形成在LCD面上的基板上的像素电极; 形成在像素电极上的第一取向膜; 形成在OTFT区域的基板上的第二取向膜; 形成在所述第二取向膜上的有机半导体层，其中所述有机半导体层沿着所述第二取向膜的方向排列; 以及形成在OTFT区域中的栅极，源极和漏极，其中源极和漏极与有机半导体层接触并且在源极和漏极之间形成沟道。

公开(公告)号：US07582898B2

公开(公告)日：2009-09-01

申请号：US11459013

申请日：2006-07-20

申请人： Yu-Wu Wang ,  Yi-Kai Wang ,  Chen-Pang Kung ,  Chih-Wen Hsiao

发明人： Yu-Wu Wang ,  Yi-Kai Wang ,  Chen-Pang Kung ,  Chih-Wen Hsiao

IPC分类号： H01L35/24

CPC分类号： H01L51/0512 ,  H01L51/0554

摘要： This invention provides a circuit structure with a double-gate organic thin film transistor device and application thereof. A protection layer covered on an organic thin film transistor structure having a bottom gate is used as another gate insulating layer. A metal layer is formed on this gate insulating layer to serve as another gate. A double-gate structure is hence accomplished. The double-gate structure can be used in a circuit. By the double-gate structure the threshold voltage of the organic thin film transistor can be adjusted, and advantageously changing the characteristic of the organic thin film transistor to improve the accuracy of signal transmission.

摘要翻译： 本发明提供一种具有双栅极有机薄膜晶体管器件的电路结构及其应用。 作为另一个栅极绝缘层，使用覆盖在具有底部栅极的有机薄膜晶体管结构上的保护层。 在该栅极绝缘层上形成金属层，作为另一个栅极。 因此实现了双门结构。 双栅结构可用于电路中。 通过双栅结构，可以调节有机薄膜晶体管的阈值电压，有利地改变有机薄膜晶体管的特性，以提高信号传输的精度。

公开(公告)号：US07482185B2

公开(公告)日：2009-01-27

申请号：US11306549

申请日：2006-01-02

申请人： Yung-Hui Yeh ,  Yu-Wu Wang ,  Yu-Lung Liu ,  Chi-Chang Liao ,  Hsing-Lung Wang

发明人： Yung-Hui Yeh ,  Yu-Wu Wang ,  Yu-Lung Liu ,  Chi-Chang Liao ,  Hsing-Lung Wang

IPC分类号： H01L21/00

CPC分类号： G02F1/133555 ,  G02F1/1362 ,  G09G3/3208 ,  G09G3/3225 ,  G09G3/3648 ,  G09G2300/023 ,  G09G2300/046 ,  G09G2300/0465 ,  G09G2300/0852 ,  H01L27/12 ,  H01L51/0541

摘要： A vertical pixel structure for emi-flective display and a method thereof are provided. The vertical pixel structure has a substrate, a emitting pixel unit arranged on the substrate and a reflective pixel unit arranged on the emitting pixel unit. By using the vertical pixel structure the aperture of the display can be increased, and the power consumption can be reduced as well.

摘要翻译： 提供了一种用于显示屏的垂直像素结构及其方法。 垂直像素结构具有衬底，布置在衬底上的发射像素单元和布置在发射像素单元上的反射像素单元。 通过使用垂直像素结构，可以增加显示器的孔径，并且还可以降低功耗。

公开(公告)号：US20070257252A1

公开(公告)日：2007-11-08

申请号：US11459013

申请日：2006-07-20

申请人： Yu-Wu Wang ,  Yi-Kai Wang ,  Chen-Pang Kung ,  Chih-Wen Hsiao

发明人： Yu-Wu Wang ,  Yi-Kai Wang ,  Chen-Pang Kung ,  Chih-Wen Hsiao

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC分类号： H01L51/0512 ,  H01L51/0554

摘要： This invention provides a circuit structure with a double-gate organic thin film transistor device and application thereof. A protection layer covered on an organic thin film transistor structure having a bottom gate is used as another gate insulating layer. A metal layer is formed on this gate insulating layer to serve as another gate. A double-gate structure is hence accomplished. The double-gate structure can be used in a circuit. By the double-gate structure the threshold voltage of the organic thin film transistor can be adjusted, and advantageously changing the characteristic of the organic thin film transistor to improve the accuracy of signal transmission.

摘要翻译： 本发明提供一种具有双栅极有机薄膜晶体管器件的电路结构及其应用。 作为另一个栅极绝缘层，使用覆盖在具有底部栅极的有机薄膜晶体管结构上的保护层。 在该栅极绝缘层上形成金属层，作为另一个栅极。 因此实现了双门结构。 双栅结构可用于电路中。 通过双栅结构，可以调节有机薄膜晶体管的阈值电压，有利地改变有机薄膜晶体管的特性，以提高信号传输的精度。

公开(公告)号：US20050056846A1

公开(公告)日：2005-03-17

申请号：US10734288

申请日：2003-12-15

申请人： Chun-Yao Huang ,  Cheng-Chung Chen ,  Yu-Wu Wang ,  Chen-Ming Chen ,  Huai-Yuan Tseng

发明人： Chun-Yao Huang ,  Cheng-Chung Chen ,  Yu-Wu Wang ,  Chen-Ming Chen ,  Huai-Yuan Tseng

IPC分类号： G09G3/22 ,  H01J31/12 ,  H01L21/336 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  H01L29/04

CPC分类号： H01L29/42384 ,  G09G3/22 ,  G09G2300/0809 ,  H01J31/127 ,  H01J2201/319 ,  H01L27/12 ,  H01L29/78645

摘要： A thin film transistor structure for a field emission display is disclosed, which has a substrate; a patterned poly-silicon layer having a source area, a drain area, and a channel on the substrate; a patterned first gate metal layer; a first gate-insulating layer sandwiched in between the poly-silicon layer and the first gate metal layer; a patterned second gate metal layer; and a second gate-insulating layer sandwiched in between the poly-silicon layer and the second gate metal layer; wherein the thickness of the second insulating layer is greater than that of the first gate-insulating layer, and the absolute voltage in the channel under the first gate metal layer is less than that under the second gate metal layer when a voltage higher than the threshold voltage thereof is applied to both of the first gate metal layer and the second gate metal layer.

摘要翻译： 公开了一种用于场发射显示器的薄膜晶体管结构，其具有基板; 具有源极区域，漏极区域和沟道的图案化多晶硅层; 图案化的第一栅极金属层; 夹在所述多晶硅层和所述第一栅极金属层之间的第一栅极绝缘层; 图案化的第二栅极金属层; 以及夹在所述多晶硅层和所述第二栅极金属层之间的第二栅极绝缘层; 其中所述第二绝缘层的厚度大于所述第一栅极绝缘层的厚度，并且当所述第一栅极金属层下方的电压高于所述阈值时，所述第二栅极金属层下面的沟道中的绝对电压小于所述第二栅极金属层下方的绝缘电压 电压施加到第一栅极金属层和第二栅极金属层两者。

公开(公告)号：US20090053851A1

公开(公告)日：2009-02-26

申请号：US12262009

申请日：2008-10-30

申请人： Yih-Jun Wong ,  Horng-Long Cheng ,  Yu-Wu Wang

发明人： Yih-Jun Wong ,  Horng-Long Cheng ,  Yu-Wu Wang

IPC分类号： H01L51/40 ,  G02F1/136

CPC分类号： G02F1/133553 ,  G02F1/136227

摘要： An organic thin film transistor array substrate including a substrate divided into an LCD region and an OTFT region; a first dielectric layer formed on the substrate in the LCD region and having a first uneven portion; an organic semiconducting layer formed on the substrate in the OTFT region; a gate, source, and drain formed in the OTFT region, wherein the source and drain are in contact with the organic semiconducting layer to form a channel between the source and drain; and a pixel electrode formed on the first uneven portion of the first dielectric layer in the LCD region.

摘要翻译： 一种有机薄膜晶体管阵列基板，包括分为LCD区域和OTFT区域的基板; 形成在所述LCD区域的所述基板上并具有第一凹凸部的第一电介质层; 形成在OTFT区域的基板上的有机半导体层; 在OTFT区域中形成的栅极，源极和漏极，其中源极和漏极与有机半导体层接触以在源极和漏极之间形成沟道; 以及形成在LCD区域中的第一电介质层的第一凹凸部上的像素电极。

公开(公告)号：US07253848B2

公开(公告)日：2007-08-07

申请号：US10458335

申请日：2003-06-10

申请人： Yih-Jun Wong ,  Horng-Long Cheng ,  Yu-Wu Wang

发明人： Yih-Jun Wong ,  Horng-Long Cheng ,  Yu-Wu Wang

IPC分类号： G02F1/136

CPC分类号： G02F1/133553 ,  G02F1/136227

摘要： An organic thin film transistor array substrate including a substrate divided into an LCD region and an OTFT region; a first dielectric layer formed on the substrate in the LCD region and having a first uneven portion; an organic semiconducting layer formed on the substrate in the OTFT region; a gate, source, and drain formed in the OTFT region, wherein the source and drain are in contact with the organic semiconducting layer to form a channel between the source and drain; and a pixel electrode formed on the first uneven portion of the first dielectric layer in the LCD region.

摘要翻译： 一种有机薄膜晶体管阵列基板，包括分为LCD区域和OTFT区域的基板; 形成在所述LCD区域的所述基板上并具有第一凹凸部的第一电介质层; 形成在OTFT区域的基板上的有机半导体层; 在OTFT区域中形成的栅极，源极和漏极，其中源极和漏极与有机半导体层接触以在源极和漏极之间形成沟道; 以及形成在LCD区域中的第一电介质层的第一凹凸部上的像素电极。