公开(公告)号：US20050186452A1

公开(公告)日：2005-08-25

申请号：US10786806

申请日：2004-02-25

申请人： Kunliang Zhang ,  Min Li ,  Rachid Sbiaa ,  Simon Liao ,  Yue Liu

发明人： Kunliang Zhang ,  Min Li ,  Rachid Sbiaa ,  Simon Liao ,  Yue Liu

IPC分类号： G11B5/39 ,  G11B5/127 ,  H01F10/16 ,  H01F10/32 ,  H01L43/08

CPC分类号： G11B5/3903 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/115

摘要： A current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type and its method of formation are disclosed, the sensor including a novel laminated free layer having ultra-thin (less than 3 angstroms thickness) laminas of Fe50 Co50 (or any iron rich alloy of the form CoxFe1-x with x between 0.25 and 0.75) interspersed with thicker layers of Co90Fe10 and Cu spacer layers to produce a free layer with good coercivity, a coefficient of magnetostriction that can be varied between positive and negative values and a high GMR ratio, due to enhancement of the bulk scattering coefficient by the laminas. The configuration of the lamina and layers in periodic groupings allow the coefficient of magnetostriction to be finely adjusted and the coercivity and GMR ratio to be optimized. The sensor performance can be further improved by including layers of Cu and Fe50Co50 in the synthetic antiferromagnetic pinned layer.

摘要翻译： 公开了合成自旋阀型的电流垂直平面（CPP）巨磁阻（GMR）传感器及其形成方法，该传感器包括具有超薄（小于3埃厚度）的新型层叠自由层， Fe O 50 Co 50（或任何形式为Fe x Fe 1-x x的任何富含铁的合金）的薄片与 x在0.25和0.75之间）散布有较厚层的Co 90 N 10 N 10和Cu间隔层，以产生具有良好矫顽力的自由层，可以变化的磁致伸缩系数 在正值和负值之间，高GMR比，由于片层散体系的增强。 周期性分组中的薄层和层的配置允许精细调节磁致伸缩系数，并优化矫顽力和GMR比。 通过在合成的反铁磁性钉扎层中包含Cu和Fe 50 Co 50层，可以进一步提高传感器性能。

公开(公告)号：US08325449B2

公开(公告)日：2012-12-04

申请号：US11895719

申请日：2007-08-27

申请人： Kunliang Zhang ,  Min Li ,  Yue Liu

发明人： Kunliang Zhang ,  Min Li ,  Yue Liu

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/39 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3909 ,  G11B2005/3996 ,  Y10T29/49021

摘要： Plasma nitridation, in place of plasma oxidation, is used for the formation of a CCP layer. Al, Mg, Hf, etc. all form insulating nitrides under these conditions. Maintaining the structure at a temperature of at least 150° C. during plasma nitridation and/or performing post annealing at a temperature of 220° C. or higher, ensures that no copper nitride can form. Additionally, unintended oxidation by molecular oxygen of the exposed magnetic layers (mainly the pinned and free layers) is also avoided.

摘要翻译： 等离子体氮化代替等离子体氧化，用于形成CCP层。 Al，Mg，Hf等都在这些条件下形成绝缘氮化物。 在等离子体氮化和/或在220℃以上的温度下进行后退火时，将结构维持在至少150℃的温度下，确保不会形成氮化铜。 此外，也避免了暴露的磁性层（主要是固定和自由层）的分子氧的非预期氧化。

公开(公告)号：US20110265325A1

公开(公告)日：2011-11-03

申请号：US13135620

申请日：2011-07-11

申请人： Kunliang Zhang ,  Min Li ,  Yue Liu ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Kunliang Zhang ,  Min Li ,  Yue Liu ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： H01B19/00

CPC分类号： H01F41/307 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3106 ,  G11B5/313 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49227

摘要： A novel CCP scheme is disclosed for a CPP-GMR sensor in which an amorphous metal/alloy layer such as Hf is inserted between a lower Cu spacer and an oxidizable layer such as Al, Mg, or AlCu prior to performing a pre-ion treatment (PIT) and ion assisted oxidation (IAO) to transform the amorphous layer into a first metal oxide template and the oxidizable layer into a second metal oxide template both having Cu metal paths therein. The amorphous layer promotes smoothness and smaller grain size in the oxidizable layer to minimize variations in the metal paths and thereby improves dR/R, R, and dR uniformity by 50% or more. An amorphous Hf layer may be used without an oxidizable layer, or a thin Cu layer may be inserted in the CCP scheme to form a Hf/PIT/IAO or Hf/Cu/Al/PIT/IAO configuration. A double PIT/IAO process may be used as in Hf/PIT/IAO/Al/PIT/IAO or Hf/PIT/IAO/Hf/PIT/IAO schemes.

公开(公告)号：US20090059441A1

公开(公告)日：2009-03-05

申请号：US11895719

申请日：2007-08-27

申请人： Kunliang Zhang ,  Min Li ,  Yue Liu

发明人： Kunliang Zhang ,  Min Li ,  Yue Liu

IPC分类号： G11B5/33 ,  B05D5/12

CPC分类号： G11B5/39 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3909 ,  G11B2005/3996 ,  Y10T29/49021

摘要： Plasma nitridation, in place of plasma oxidation, is used for the formation of a CCP layer. Al, Mg, Hf, etc. all form insulating nitrides under these conditions. Maintaining the structure at a temperature of at least 150° C. during plasma nitridation and/or performing post annealing at a temperature of 220° C. or higher, ensures that no copper nitride can form. Additionally, unintended oxidation by molecular oxygen of the exposed magnetic layers (mainly the pinned and free layers) is also avoided

摘要翻译： 等离子体氮化代替等离子体氧化，用于形成CCP层。 Al，Mg，Hf等都在这些条件下形成绝缘氮化物。 在等离子体氮化和/或在220℃以上的温度下进行后退火时，将结构维持在至少150℃的温度下，确保不会形成氮化铜。 此外，也避免了暴露的磁性层（主要是固定和自由层）的分子氧的非预期氧化

公开(公告)号：US20060007605A1

公开(公告)日：2006-01-12

申请号：US10886288

申请日：2004-07-07

申请人： Min Li ,  Cheng Horng ,  Cherng Han ,  Yue Liu ,  Yu-Hsia Chen ,  Ru-Ying Tong

发明人： Min Li ,  Cheng Horng ,  Cherng Han ,  Yue Liu ,  Yu-Hsia Chen ,  Ru-Ying Tong

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T428/115

摘要： Improved CPP GMR devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of NiCr on Ta, said seed being deposited on the NiFe layer that constitutes a magnetic shield. Additional improvement was also obtained by replacing the conventional non-magnetic spacer layer of copper with a sandwich structure of two copper layers with an NOL (nano-oxide layer) between them. A process for manufacturing the devices is provided.

摘要翻译： 已经通过用Ta上的NiCr双层替代常规种子层（通常为Ta）来制造改进的CPP GMR器件，所述种子沉积在构成磁屏蔽的NiFe层上。 通过用它们之间的NOL（纳米氧化物层）的两层铜层的夹层结构代替铜的常规非磁性间隔层也获得了另外的改进。 提供了一种制造该装置的方法。

公开(公告)号：US07141314B2

公开(公告)日：2006-11-28

申请号：US10786806

申请日：2004-02-25

申请人： Kunliang Zhang ,  Min Li ,  Rachid Sbiaa ,  Simon Liao ,  Yue Liu

发明人： Kunliang Zhang ,  Min Li ,  Rachid Sbiaa ,  Simon Liao ,  Yue Liu

IPC分类号： G11B5/39

CPC分类号： G11B5/3903 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/115

摘要： A current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type and its method of formation are disclosed, the sensor including a novel laminated free layer having ultra-thin (less than 3 angstroms thickness) laminas of Fe50 Co50 (or any iron rich alloy of the form CoxFe1−x with x between 0.25 and 0.75) interspersed with thicker layers of Co90Fe10 and Cu spacer layers to produce a free layer with good coercivity, a coefficient of magnetostriction that can be varied between positive and negative values and a high GMR ratio, due to enhancement of the bulk scattering coefficient by the laminas. The configuration of the lamina and layers in periodic groupings allow the coefficient of magnetostriction to be finely adjusted and the coercivity and GMR ratio to be optimized. The sensor performance can be further improved by including layers of Cu and Fe50Co50 in the synthetic antiferromagnetic pinned layer.

摘要翻译： 公开了合成自旋阀型的电流垂直平面（CPP）巨磁阻（GMR）传感器及其形成方法，该传感器包括具有超薄（小于3埃厚度）的新型层叠自由层， Fe O 50 Co 50（或任何形式为Fe x Fe 1-x x的任何富含铁的合金）的薄片与 x在0.25和0.75之间）散布有较厚层的Co 90 N 10 N 10和Cu间隔层，以产生具有良好矫顽力的自由层，可以变化的磁致伸缩系数 在正值和负值之间，高GMR比，由于片层散体系的增强。 周期性分组中的薄层和层的配置允许精细调节磁致伸缩系数，并优化矫顽力和GMR比。 通过在合成的反铁磁性钉扎层中包含Cu和Fe 50 Co 50层，可以进一步提高传感器性能。

公开(公告)号：US07075758B2

公开(公告)日：2006-07-11

申请号：US10657504

申请日：2003-09-08

申请人： Kunliang Zhang ,  Kochan Ju ,  Min Li ,  Youfeng Zheng ,  Simon Liao ,  Yue Liu

发明人： Kunliang Zhang ,  Kochan Ju ,  Min Li ,  Youfeng Zheng ,  Simon Liao ,  Yue Liu

IPC分类号： G11B5/39

CPC分类号： G11B5/332 ,  G11B5/31 ,  G11B5/3912 ,  G11B5/398

摘要： Increases in the AP1 and AP2 thickness cause the free layer to be off-center in a CPP magnetic read head. This problem has been overcome by inserting supplementary magnetic shields within the spin valve, located as close as possible to the stack. These supplementary shields enable the read gap width to be reduced by about 430 Å and the free layer to shift back towards the center by about 30 Å.

摘要翻译： AP 1和AP 2厚度的增加导致自由层在CPP磁读头中偏离中心。 通过在辅助磁屏蔽件内插入尽可能靠近堆叠的位置来克服这个问题。 这些辅助屏蔽使得读取间隙宽度可以减小约430埃，而自由层向中心向后移动大约30埃。

公开(公告)号：US20080112089A1

公开(公告)日：2008-05-15

申请号：US12008151

申请日：2008-01-09

申请人： Min Li ,  Cheng Horng ,  Cherng Han ,  Yue Liu ,  Yu-Hsia Chen ,  Ru-Ying Tong

发明人： Min Li ,  Cheng Horng ,  Cherng Han ,  Yue Liu ,  Yu-Hsia Chen ,  Ru-Ying Tong

IPC分类号： G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T428/115

摘要： Improved CPP GMR devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of NiCr on Ta, said seed being deposited on the NiFe layer that constitutes a magnetic shield. Additional improvement was also obtained by replacing the conventional non-magnetic spacer layer of copper with a sandwich structure of two copper layers with an NOL (nano-oxide layer) between them. A process for manufacturing the devices is also described.

摘要翻译： 已经通过用Ta上的NiCr双层替代常规种子层（通常为Ta）来制造改进的CPP GMR器件，所述种子沉积在构成磁屏蔽的NiFe层上。 通过用它们之间的NOL（纳米氧化物层）的两层铜层的夹层结构代替铜的常规非磁性间隔层也获得了另外的改进。 还描述了用于制造器件的工艺。

公开(公告)号：US20050052789A1

公开(公告)日：2005-03-10

申请号：US10657504

申请日：2003-09-08

申请人： Kunliang Zhang ,  Kochan Ju ,  Min Li ,  Youfeng Zheng ,  Simon Liao ,  Yue Liu

发明人： Kunliang Zhang ,  Kochan Ju ,  Min Li ,  Youfeng Zheng ,  Simon Liao ,  Yue Liu

IPC分类号： G11B5/31 ,  G11B5/33 ,  G11B5/127

CPC分类号： G11B5/332 ,  G11B5/31 ,  G11B5/3912 ,  G11B5/398

摘要： Increases in the AP1 and AP2 thickness cause the free layer to be off-center in a CPP magnetic read head. This problem has been overcome by inserting supplementary magnetic shields within the spin valve, located as close as possible to the stack. These supplementary shields enable the read gap width to be reduced by about 430 Å and the free layer to shift back towards the center by about 30 Å.

摘要翻译： AP1和AP2厚度的增加导致CPP磁头中的自由层偏心。 通过在辅助磁屏蔽件内插入尽可能靠近堆叠的位置来克服这个问题。 这些辅助屏蔽使得读取间隙宽度可以减小约430埃，而自由层向中心向后移动大约30埃。

公开(公告)号：US07978440B2

公开(公告)日：2011-07-12

申请号：US12008151

申请日：2008-01-09

申请人： Min Li ,  Cheng T. Horng ,  Cherng Chyi Han ,  Yue Liu ,  Yu-Hsia Chen ,  Ru-Ying Tong

发明人： Min Li ,  Cheng T. Horng ,  Cherng Chyi Han ,  Yue Liu ,  Yu-Hsia Chen ,  Ru-Ying Tong

IPC分类号： G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T428/115

摘要： Improved CPP GMR devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of NiCr on Ta, said seed being deposited on the NiFe layer that constitutes a magnetic shield. Additional improvement was also obtained by replacing the conventional non-magnetic spacer layer of copper with a sandwich structure of two copper layers with an NOL (nano-oxide layer) between them. A process for manufacturing the devices is also described.

摘要翻译： 已经通过用Ta上的NiCr双层替代常规种子层（通常为Ta）来制造改进的CPP GMR器件，所述种子沉积在构成磁屏蔽的NiFe层上。 通过用它们之间的NOL（纳米氧化物层）的两层铜层的夹层结构代替铜的常规非磁性间隔层也获得了另外的改进。 还描述了用于制造器件的工艺。