公开(公告)号：US20200227546A1

公开(公告)日：2020-07-16

申请号：US16739333

申请日：2020-01-10

申请人： Xuanqi Huang ,  Yuji Zhao ,  Runchen Fang ,  Hugh Barnaby

发明人： Xuanqi Huang ,  Yuji Zhao ,  Runchen Fang ,  Hugh Barnaby

IPC分类号： H01L29/778 ,  H01L29/08 ,  H01L27/24 ,  H01L29/20 ,  H01L29/205 ,  H01L45/00 ,  H01L29/66

摘要： A steep-slope (SS) field effect transistor (FET) including a FET having a source region and a drain region, and a threshold switching device in direct contact with the source region or the drain region of the FET. Fabricating the steep-slope (SS) field effect transistor (FET) includes fabricating an AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) having a source region and a drain region, depositing a first electrode layer directly on the source region or the drain region, depositing a threshold switching layer directly on the first electrode layer, and depositing a second electrode layer directly on the threshold switching layer.

公开(公告)号：US11189717B2

公开(公告)日：2021-11-30

申请号：US16739333

申请日：2020-01-10

申请人： Xuanqi Huang ,  Yuji Zhao ,  Runchen Fang ,  Hugh Barnaby

发明人： Xuanqi Huang ,  Yuji Zhao ,  Runchen Fang ,  Hugh Barnaby

IPC分类号： H01L29/778 ,  H01L29/08 ,  H01L27/24 ,  H01L29/20 ,  H01L45/00 ,  H01L29/66 ,  H01L29/205

摘要： A steep-slope (SS) field effect transistor (FET) including a FET having a source region and a drain region, and a threshold switching device in direct contact with the source region or the drain region of the FET. Fabricating the steep-slope (SS) field effect transistor (FET) includes fabricating an AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) having a source region and a drain region, depositing a first electrode layer directly on the source region or the drain region, depositing a threshold switching layer directly on the first electrode layer, and depositing a second electrode layer directly on the threshold switching layer.

公开(公告)号：US20200287069A1

公开(公告)日：2020-09-10

申请号：US16811355

申请日：2020-03-06

申请人： Xuanqi Huang ,  Yuji Zhao

发明人： Xuanqi Huang ,  Yuji Zhao

IPC分类号： H01L31/0735 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/0224

摘要： A solar cell including a nonpolar m-plane GaN substrate, an n-type III-nitride layer, a III-nitride active region, and a p-type III-nitride layer. In one example, the solar cell includes a nonpolar m-plane GaN substrate, a Si-doped GaN layer, a multiplicity of InGaN/GaN layers, and and a Mg-doped GaN layer. A working temperature range of the solar cell is from room temperature to about 500° C., an external quantum efficiency of the solar cell increases by at least a factor of 2 from room temperature to 500° C., and a temperature coefficient of the solar cell is greater than zero up to 350° C.

公开(公告)号：US20120313076A1

公开(公告)日：2012-12-13

申请号：US13493430

申请日：2012-06-11

申请人： Shuji Nakamura ,  Steven P. DenBaars ,  Shinichi Tanaka ,  Daniel F. Feezell ,  Yuji Zhao ,  Chih-Chien Pan

发明人： Shuji Nakamura ,  Steven P. DenBaars ,  Shinichi Tanaka ,  Daniel F. Feezell ,  Yuji Zhao ,  Chih-Chien Pan

IPC分类号： H01L33/04 ,  H01L33/32

CPC分类号： H01L33/06 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0062 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32

摘要： A light emitting diode structure of (Al,Ga,In)N thin films grown on a gallium nitride (GaN) semipolar substrate by metal organic chemical vapor deposition (MOCVD) that exhibits reduced droop. The device structure includes a quantum well (QW) active region of two or more periods, n-type superlattice layers (n-SLs) located below the QW active region, and p-type superlattice layers (p-SLs) above the QW active region. The present invention also encompasses a method of fabricating such a device.

摘要翻译： 通过金属有机化学气相沉积（MOCVD）在氮化镓（GaN）半极性衬底上生长的（Al，Ga，In）N薄膜的发光二极管结构，其呈现减小的下垂。 该器件结构包括两个或多个周期的量子阱（QW）有源区，位于QW有源区下面的n型超晶格层（n-SL）以及QW有源区以上的p型超晶格层（p-SL） 地区。 本发明还包括制造这种装置的方法。

公开(公告)号：US08686397B2

公开(公告)日：2014-04-01

申请号：US13493430

申请日：2012-06-11

申请人： Shuji Nakamura ,  Steven P. DenBaars ,  Shinichi Tanaka ,  Daniel F. Feezell ,  Yuji Zhao ,  Chih-Chien Pan

发明人： Shuji Nakamura ,  Steven P. DenBaars ,  Shinichi Tanaka ,  Daniel F. Feezell ,  Yuji Zhao ,  Chih-Chien Pan

IPC分类号： H01L29/06

CPC分类号： H01L33/06 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0062 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32

摘要： A light emitting diode structure of (Al,Ga,In)N thin films grown on a gallium nitride (GaN) semipolar substrate by metal organic chemical vapor deposition (MOCVD) that exhibits reduced droop. The device structure includes a quantum well (QW) active region of two or more periods, n-type superlattice layers (n-SLs) located below the QW active region, and p-type superlattice layers (p-SLs) above the QW active region. The present invention also encompasses a method of fabricating such a device.

摘要翻译： 通过金属有机化学气相沉积（MOCVD）在氮化镓（GaN）半极性衬底上生长的（Al，Ga，In）N薄膜的发光二极管结构，其呈现减小的下垂。 该器件结构包括两个或多个周期的量子阱（QW）有源区，位于QW有源区下面的n型超晶格层（n-SL）以及QW有源区以上的p型超晶格层（p-SL） 地区。 本发明还包括制造这种装置的方法。

公开(公告)号：US20120313077A1

公开(公告)日：2012-12-13

申请号：US13493483

申请日：2012-06-11

申请人： Shuji Nakamura ,  Steven P. DenBaars ,  Daniel F. Feezell ,  Chih-Chien Pan ,  Yuji Zhao ,  Shinichi Tanaka

发明人： Shuji Nakamura ,  Steven P. DenBaars ,  Daniel F. Feezell ,  Chih-Chien Pan ,  Yuji Zhao ,  Shinichi Tanaka

IPC分类号： H01L33/04 ,  H01L33/32

CPC分类号： H01L33/0062 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L33/06 ,  H01L33/16

摘要： High emission power and low efficiency droop semipolar blue light emitting diodes (LEDs).

摘要翻译： 高发射功率和低效率下垂半极蓝光发光二极管（LED）。

公开(公告)号：US20120273796A1

公开(公告)日：2012-11-01

申请号：US13459963

申请日：2012-04-30

申请人： Yuji Zhao ,  Shinichi Tanaka ,  Chia-Yen Huang ,  Daniel F. Feezell ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Yuji Zhao ,  Shinichi Tanaka ,  Chia-Yen Huang ,  Daniel F. Feezell ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L33/00

CPC分类号： H01L33/16 ,  H01L33/0075 ,  H01L33/32

摘要： A Group-III nitride optoelectronic device fabricated on a semipolar (20-2-1) plane of a Gallium Nitride (GaN) substrate is characterized by a high Indium uptake and a high polarization ratio.

摘要翻译： 在氮化镓（GaN）衬底的半极（20-2-1）平面上制造的III族氮化物光电子器件的特征在于高的铟吸收和高的偏振比。

公开(公告)号：US20120126283A1

公开(公告)日：2012-05-24

申请号：US13283259

申请日：2011-10-27

申请人： Yuji Zhao ,  Junichi Sonoda ,  Chih-Chien Pan ,  Shinichi Tanaka ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Yuji Zhao ,  Junichi Sonoda ,  Chih-Chien Pan ,  Shinichi Tanaka ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L33/02

CPC分类号： H01L33/16 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/0075 ,  H01L33/32

摘要： A III-nitride light emitting diode grown on a semipolar {20-2-1} plane of a substrate and characterized by high power, high efficiency and low efficiency droop.

摘要翻译： 在衬底的半极{20-2-1}平面上生长的III族氮化物发光二极管，其特征在于高功率，高效率和低效率下垂。