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    Quasi-CW diode-pumped, solid-state harmonic laser system and method employing same
    12.
    发明授权
    Quasi-CW diode-pumped, solid-state harmonic laser system and method employing same 有权
    准CW二极管泵浦，固态谐波激光系统及其应用方法

    公开(公告)号：US06781090B2

    公开(公告)日：2004-08-24

    申请号：US10242299

    申请日：2002-09-11

    Applicant: Yunlong Sun ,  Richard S. Harris

    Inventor： Yunlong Sun ,  Richard S. Harris

    IPC: B23K2638

    CPC classification number: B23K26/0622 ,  B23K26/382 ,  B23K26/40 ,  B23K2101/35 ,  B23K2101/42 ,  B23K2103/08 ,  B23K2103/10 ,  B23K2103/12 ,  B23K2103/14 ,  B23K2103/16 ,  B23K2103/172 ,  B23K2103/26 ,  B23K2103/42 ,  B23K2103/50 ,  B23K2103/52 ,  H05K3/0026

    Abstract: A quasi-CW diode-pumped, A-O Q-switched solid-state harmonic laser system (10) synchronizes timing of the quasi-CW pumping with movement of the positioning system (36) to reduce pumping while the positioning system (36) is moving from one target area (31) to the next target area (31) to form multiple vias in a substrate at a high throughput. Thus, the available UV power for via formation is higher even though the loading to the laser pumping diodes (14) remains the same as that currently available through conventional CW pumping with conventionally available laser pumping diodes (14). The quasi-CW-pumping current profile can be further modified to realize a preferred UV pulse amplitude profile.

    Abstract translation: 准CW二极管泵浦AOQ开关固态谐波激光系统（10）使准CW泵浦的定时与定位系统（36）的运动同步，以在定位系统（36）移动时减少泵送 从一个目标区域（31）到下一个目标区域（31），以高通量在基板中形成多个通孔。 因此，即使对于激光泵浦二极管（14）的负载保持与通过常规CW泵浦可用的常规可用激光二极管（14）可用的负载相同，用于通孔形成的可用UV功率也较高。 可以进一步修改准CW泵浦电流分布，以实现优选的UV脉冲幅度分布。

    SEMICONDUCTOR STRUCTURE PROCESSING USING MULTIPLE LASER BEAM SPOTS OVERLAPPING LENGTHWISE ON A STRUCTURE
    15.
    发明申请
    SEMICONDUCTOR STRUCTURE PROCESSING USING MULTIPLE LASER BEAM SPOTS OVERLAPPING LENGTHWISE ON A STRUCTURE 审中-公开
    使用多个激光束的半导体结构处理在结构上重叠长度

    公开(公告)号：US20100084662A1

    公开(公告)日：2010-04-08

    申请号：US12633123

    申请日：2009-12-08

    Applicant: Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo ,  Richard S. Harris ,  Yunlong Sun

    Inventor： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo ,  Richard S. Harris ,  Yunlong Sun

    IPC: H01L29/04 ,  H01L21/00 ,  B23K26/067 ,  B23K26/36

    CPC classification number: B23K26/067 ,  B23K26/0604 ,  B23K26/0613 ,  H01L21/76894 ,  H01L23/5258 ,  H01L27/1052 ,  H01L27/10894 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Methods and systems use laser pulses to process a selected structure on or within a semiconductor substrate. The structure has a surface, a width, and a length. The laser pulses propagate along axes that move along a scan beam path relative to the substrate as the laser pulses process the selected structure. The method simultaneously generates on the selected structure first and second laser beam pulses that propagate along respective first and second laser beam axes intersecting the selected structure at distinct first and second locations. The first and second laser beam pulses impinge on the surface of the selected structure respective first and second beam spots. Each beam spot encompasses at least the width of the selected link. The first and second beam spots are spatially offset from one another along the length of the selected structure to define an overlapping region covered by both the first and the second beam spots and a total region covered by one or both of the first and second beam spots. The total region is larger than the first beam spot and also larger than the second beam spot. The method sets respective first and second energy values of the first and second laser beam pulses to cause complete depthwise processing of the selected structure across the width of the structure in at least a portion of the total region.

    Abstract translation: 方法和系统使用激光脉冲来处理半导体衬底上或其中的选定结构。 该结构具有表面，宽度和长度。 随着激光脉冲处理所选择的结构，激光脉冲沿着沿扫描光束路径相对于衬底移动的轴传播。 所述方法同时在所选择的结构上产生沿相应的第一和第二激光束轴线在不同的第一和第二位置与所选择的结构相交的第一和第二激光束脉冲。 第一和第二激光束脉冲冲击所选结构的表面上相应的第一和第二光束点。 每个光束点至少包含所选链接的宽度。 第一和第二光束斑点沿着所选择的结构的长度在空间上彼此偏移以限定由第一和第二光束点两者覆盖的重叠区域，以及由第一和第二光束斑点中的一个或两个覆盖的总区域 。 总区域大于第一束斑，并且大于第二束斑。 该方法设置第一和第二激光束脉冲的相应的第一和第二能量值，以便在整个区域的至少一部分中跨结构的宽度对所选结构进行完全深度处理。

    Semiconductor structure processing using multiple laser beam spots overlapping lengthwise on a structure
    17.
    发明授权
    Semiconductor structure processing using multiple laser beam spots overlapping lengthwise on a structure 有权
    使用在结构上纵向重叠的多个激光束点的半导体结构处理

    公开(公告)号：US07633034B2

    公开(公告)日：2009-12-15

    申请号：US11051261

    申请日：2005-02-04

    Applicant: Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo ,  Richard S. Harris ,  Yunlong Sun

    Inventor： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo ,  Richard S. Harris ,  Yunlong Sun

    IPC: B23K26/00

    CPC classification number: B23K26/067 ,  B23K26/0604 ,  B23K26/0613 ,  H01L21/76894 ,  H01L23/5258 ,  H01L27/1052 ,  H01L27/10894 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Methods and systems use laser pulses to process a selected structure on or within a semiconductor substrate. The structure has a surface, a width, and a length. The laser pulses propagate along axes that move along a scan beam path relative to the substrate as the laser pulses process the selected structure. The method simultaneously generates on the selected structure first and second laser beam pulses that propagate along respective first and second laser beam axes intersecting the selected structure at distinct first and second locations. The first and second laser beam pulses impinge on the surface of the selected structure respective first and second beam spots. Each beam spot encompasses at least the width of the selected link. The first and second beam spots are spatially offset from one another along the length of the selected structure to define an overlapping region covered by both the first and the second beam spots and a total region covered by one or both of the first and second beam spots. The total region is larger than the first beam spot and also larger than the second beam spot. The method sets respective first and second energy values of the first and second laser beam pulses to cause complete depthwise processing of the selected structure across the width of the structure in at least a portion of the total region.

    Abstract translation: 方法和系统使用激光脉冲来处理半导体衬底上或其中的选定结构。 该结构具有表面，宽度和长度。 随着激光脉冲处理所选择的结构，激光脉冲沿着沿扫描光束路径相对于衬底移动的轴传播。 所述方法同时在所选择的结构上产生沿相应的第一和第二激光束轴线在不同的第一和第二位置与所选择的结构相交的第一和第二激光束脉冲。 第一和第二激光束脉冲冲击所选结构的表面上相应的第一和第二光束点。 每个光束点至少包含所选链接的宽度。 第一和第二光束斑点沿着所选择的结构的长度在空间上彼此偏移以限定由第一和第二光束点两者覆盖的重叠区域，以及由第一和第二光束斑点中的一个或两个覆盖的总区域 。 总区域大于第一束斑，并且大于第二束斑。 该方法设置第一和第二激光束脉冲的相应的第一和第二能量值，以便在整个区域的至少一部分中跨结构的宽度对所选结构进行完全深度处理。

    SYSTEMS AND METHODS FOR LINK PROCESSING WITH ULTRAFAST AND NANOSECOND LASER PULSES
    18.
    发明申请
    SYSTEMS AND METHODS FOR LINK PROCESSING WITH ULTRAFAST AND NANOSECOND LASER PULSES 审中-公开
    用ULTRAFAST和NANOSECOND激光脉冲串联处理的系统和方法

    公开(公告)号：US20090141750A1

    公开(公告)日：2009-06-04

    申请号：US11949530

    申请日：2007-12-03

    Applicant: Yunlong Sun ,  Richard S. Harris

    Inventor： Yunlong Sun ,  Richard S. Harris

    IPC: G21K5/10 ,  H01S3/10 ,  H01S3/13

    CPC classification number: B23K26/0624 ,  H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Systems and methods for processing an electrically conductive link in an integrated circuit use a series of laser pulses having different pulse widths to remove different portions of a target structure without substantially damaging a material underlying the electrically conductive link. In one embodiment, an ultrafast laser pulse or bundle of ultrafast laser pulses removes an overlying passivation layer in a target area and a first portion of link material. Then, a nanosecond laser pulse removes a second portion of the link material to sever an electrical connection between two nodes in the integrated circuit. The nanosecond laser pulse is configured to reduce or eliminate damage to the underlying material.

    Abstract translation: 用于处理集成电路中的导电链路的系统和方法使用具有不同脉冲宽度的一系列激光脉冲来去除目标结构的不同部分，而不会基本上损坏导电链路下方的材料。 在一个实施例中，超快激光脉冲或超快激光脉冲束去除了目标区域中的覆盖钝化层和链接材料的第一部分。 然后，纳秒激光脉冲移除链路材料的第二部分以切断集成电路中的两个节点之间的电连接。 纳秒激光脉冲被配置为减少或消除对下面的材料的损坏。

    Generating sets of tailored laser pulses
    19.
    发明授权
    Generating sets of tailored laser pulses 有权
    生成一组定制的激光脉冲

    公开(公告)号：US07126746B2

    公开(公告)日：2006-10-24

    申请号：US10921765

    申请日：2004-08-18

    Applicant: Yunlong Sun ,  Robert F. Hainsey

    Inventor： Yunlong Sun ,  Robert F. Hainsey

    IPC: H01S3/00 ,  B23K26/04

    CPC classification number: H01L23/5258 ,  B23K26/0613 ,  B23K26/0622 ,  B23K2101/40 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: In a master oscillator power amplifier, a driver (208) of a diode laser (202) is specially controlled to generate a set of two or more injection laser pulses that are injected into a power amplifier (204) operated in an unsaturated state to generate a set (50) of laser pulses (52) that replicate the temporal power profile of the injection laser pulses to remove a conductive link (22) and/or its overlying passivation layer (44) in a memory or other IC chip. Each set (50) includes at least one specially tailored pulse (52) and/or two or more pulses (50) having different temporal power profiles. The duration of the set (50) is short enough to be treated as a single “pulse” by conventional positioning systems (380) to perform on-the-fly link removal without stopping.

    Abstract translation: 在主振荡器功率放大器中，特别地控制二极管激光器（202）的驱动器（208），以产生注入到以不饱和状态操作的功率放大器（204）中的两个或更多个注入激光脉冲的集合，以产生 一组（50）激光脉冲（52），其复制所述注入激光脉冲的时间功率分布以去除存储器或其它IC芯片中的导电连接（22）和/或其上覆钝化层（44）。 每个组（50）包括具有不同时间功率分布的至少一个特别定制的脉冲（52）和/或两个或更多个脉冲（50）。 集合（50）的持续时间足够短以被常规定位系统（380）视为单个“脉冲”，以在不停止的情况下执行即时链路去除。

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