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131 条记录 (耗时 0.049 秒)

    Alkali-soluble siloxane polymer, positive type resist composition, resist pattern, process for forming the same, electronic device and process for manufacturing the same
    11.
    发明授权
    Alkali-soluble siloxane polymer, positive type resist composition, resist pattern, process for forming the same, electronic device and process for manufacturing the same 有权
    碱溶性硅氧烷聚合物，正型抗蚀剂组合物，抗蚀剂图案，其形成方法，电子器件及其制造方法

    公开(公告)号：US06949324B2

    公开(公告)日：2005-09-27

    申请号：US10329992

    申请日：2002-12-27

    申请人： Keiji Watanabe ,  Miwa Kozawa ,  Shoichi Suda ,  Fumi Yamaguchi ,  Isao Yahagi ,  Michitaka Morikawa

    发明人： Keiji Watanabe ,  Miwa Kozawa ,  Shoichi Suda ,  Fumi Yamaguchi ,  Isao Yahagi ,  Michitaka Morikawa

    IPC分类号： C08G77/38 ,  C09D183/06 ,  G03F7/004 ,  G03F7/023 ,  G03F7/075 ,  G03F7/40 ,  H01L21/027

    CPC分类号： G03F7/0233 ,  C09D183/06 ,  G03F7/0045 ,  G03F7/0757

    摘要： A positive type resist composition having an alkali-soluble siloxane polymer expressed by the following Formula (1), a photosensitive compound, and a 1 μm thick resist film formed of the positive type resist composition which has 5% to 60% of transmittance to i-line radiation; in the Formula (1), R1 and R2 express a monovalent organic group, and may be identical or different; “A” is a group expressed by the following Formula (2) having at least one phenolic hydroxyl group; and “a”, “b,” and “c” satisfy the following relation; a+b+c=1, in the Formula (2), R3, R4, and R5 express one of a hydrogen atom and a monovalent organic group, and may be identical or different, “m” expresses an integer, and “n” expresses an integer of 1 to 5. Preferably, 0.25≦a≦0.60, and 0≦c≦0.25. The composition is preferably used in a resist film undergoing oxygen plasma etching.

    摘要翻译： 具有由下式（1）表示的碱溶性硅氧烷聚合物的正型抗蚀剂组合物，感光性化合物和由正型抗蚀剂组合物形成的1μm厚的抗蚀剂膜，其具有对i的透射率的5％至60％ 线辐射; 在式（1）中，R 1和R 2表示一价有机基团，可以相同或不同; “A”是具有至少一个酚羟基的由下式（2）表示的基团; 和“a”，“b”和“c”满足下列关系： 在式（2）中，a + b + c = 1，R 3，R 4，R 5和R 5表示氢 原子和一价有机基团，并且可以相同或不同，“m”表示整数，“n”表示1至5的整数。优选地，0.25 <= a <= 0.60，0 <= c < 0.25。 该组合物优选用于进行氧等离子体蚀刻的抗蚀剂膜。

    Electret microphone
    12.
    发明授权
    Electret microphone 失效
    驻极体麦克风

    公开(公告)号：US06744896B2

    公开(公告)日：2004-06-01

    申请号：US10265363

    申请日：2002-10-07

    申请人： Haruhisa Tanabe ,  Keiji Watanabe ,  Koji Takayama

    发明人： Haruhisa Tanabe ,  Keiji Watanabe ,  Koji Takayama

    IPC分类号： H04R2500

    CPC分类号： H04R19/00

    摘要： A back plate having a recess in an underside thereof and a stationary back electrode at a central portion thereof is secured to a substrate, a spacer having an opening is mounted on the back plate so as to form a vacancy between an inside wall of the opening and a periphery of the stationary back electrode. A diaphragm electrode is provided on the spacer. The back plate has vents in the vacancy so as to communicate a space between the back electrode and the diaphragm electrode to a space in the recess of the back plate.

    摘要翻译： 在其底部具有凹部的背板和其中央部分的固定背面电极固定到基板上，具有开口的间隔件安装在背板上，以在开口的内壁之间形成空位 和固定背面电极的周边。 在隔片上设置隔膜电极。 背板具有空隙的通风口，以将背面电极和隔膜电极之间的空间连通到背板的凹部中的空间。

    Chemical amplification resist compositions and process for the formation of resist patterns
    13.
    发明授权
    Chemical amplification resist compositions and process for the formation of resist patterns 失效
    化学放大抗蚀剂组合物和形成抗蚀剂图案的方法

    公开(公告)号：US06582878B2

    公开(公告)日：2003-06-24

    申请号：US09757476

    申请日：2001-01-11

    申请人： Takahisa Namiki ,  Ei Yano ,  Keiji Watanabe ,  Koji Nozaki ,  Miwa Igarashi ,  Yoko Kuramitsu

    发明人： Takahisa Namiki ,  Ei Yano ,  Keiji Watanabe ,  Koji Nozaki ,  Miwa Igarashi ,  Yoko Kuramitsu

    IPC分类号： G03F7004

    CPC分类号： G03F7/0045 ,  G03F7/039

    摘要： A novel chemical amplification resist composition which comprises an alkali-soluble base resin, a photoacid generator and a dissolution inhibitor and in which a cyclic or acyclic structure constituting a matrix portion of the molecule of said dissolution inhibitor contains at least one lone pair-containing portion which can provide a hydrogen bond sufficient to shift and gather an alkali-soluble moiety of said base resin to and on a side of said molecule of the dissolution inhibitor compound. The resist composition can exhibit both excellent sensitivity and resolution and accordingly can be utilized in the formation of very fine resist patterns in a lithographic process. A method for forming such resist patterns is also disclosed.

    摘要翻译： 一种新颖的化学增幅抗蚀剂组合物，其包含碱溶性基础树脂，光致酸产生剂和溶解抑制剂，其中构成所述溶解抑制剂分子的基质部分的环状或非环状结构含有至少一个含有孤对的部分 其可以提供足以将所述基础树脂的碱溶性部分移动并收集在所述溶解抑制剂化合物的所述分子的一侧上和在所述分子的一侧上的氢键。 抗蚀剂组合物可以表现出优异的灵敏度和分辨率，因此可以用于在光刻工艺中形成非常精细的抗蚀剂图案。 还公开了形成这种抗蚀剂图案的方法。

    Chemical amplification resist compositions and process for the formation of resist patterns
    15.
    发明授权
    Chemical amplification resist compositions and process for the formation of resist patterns 失效
    化学放大抗蚀剂组合物和形成抗蚀剂图案的方法

    公开(公告)号：US06200724B1

    公开(公告)日：2001-03-13

    申请号：US08715880

    申请日：1996-09-19

    申请人： Takahisa Namiki ,  Ei Yano ,  Keiji Watanabe ,  Koji Nozaki ,  Miwa Igarashi ,  Yoko Kuramitsu

    发明人： Takahisa Namiki ,  Ei Yano ,  Keiji Watanabe ,  Koji Nozaki ,  Miwa Igarashi ,  Yoko Kuramitsu

    IPC分类号： G03C173

    CPC分类号： G03F7/0045 ,  G03F7/039

    摘要： A novel chemical amplification resist composition which comprises an alkali-soluble base resin, a photoacid generator and a dissolution inhibitor and in which a cyclic or acyclic structure constituting a matrix portion of the molecule of said dissolution inhibitor contains at least one lone pair-containing portion which can provide a hydrogen bond sufficient to shift and gather an alkali-soluble moiety of said base resin to and on a side of said molecule of the dissolution inhibitor compound. The resist composition can exhibit both excellent sensitivity and resolution and accordingly can be utilized in the formation of very fine resist patterns in a lithographic process. A method for forming such resist patterns is also disclosed.

    摘要翻译： 一种新颖的化学增幅抗蚀剂组合物，其包含碱溶性基础树脂，光致酸产生剂和溶解抑制剂，其中构成所述溶解抑制剂分子的基质部分的环状或非环状结构含有至少一个含有孤对的部分 其可以提供足以将所述基础树脂的碱溶性部分移动并收集在所述溶解抑制剂化合物的所述分子的一侧上和在所述分子的一侧上的氢键。 抗蚀剂组合物可以表现出优异的灵敏度和分辨率，因此可用于在光刻工艺中形成非常精细的抗蚀剂图案。 还公开了形成这种抗蚀剂图案的方法。

    Resist composition, a process for forming a resist pattern and a process for manufacturing a semiconductor device
    18.
    发明授权
    Resist composition, a process for forming a resist pattern and a process for manufacturing a semiconductor device 失效
    抗蚀剂组合物，形成抗蚀剂图案的工艺和制造半导体器件的工艺

    公开(公告)号：US5910392A

    公开(公告)日：1999-06-08

    申请号：US882734

    申请日：1997-06-26

    申请人： Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi

    发明人： Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi

    IPC分类号： H01L21/3065 ,  G03F7/004 ,  G03F7/039 ,  G03F7/40 ,  H01L21/027 ,  H01L21/302 ,  G03C1/492

    CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/106 ,  Y10S430/11 ,  Y10S430/111

    摘要： The present invention discloses a chemically amplified resist composition that is able to form a resist pattern that can be exposed in short wavelength regions, has good transparency, sensitivity, dry-etch resistance and resolution, while also exhibiting excellent adhesion to the substrate. This chemically amplified resist composition comprises: the combination of a base resin comprised of a polymer that is itself insoluble in a basic aqueous solution and contains at least (A) a monomer unit I having carboxylic acid or phenol protected with a specific protective group, and (B) a monomer unit II having an ester group or ether group that contains a cyclic carbonate structure, and can become soluble in a basic aqueous solution when the protective group of the monomer unit I is deprotected by the effect of the acid; and, a photo acid generator capable of generating an acid that can provoke deprotection of the protective group of monomer unit I when decomposed by absorption of imaging radiation.

    摘要翻译： 本发明公开了一种化学放大抗蚀剂组合物，其能够形成可在短波长区域中曝光的抗蚀剂图案，具有良好的透明度，灵敏度，耐干蚀刻性和分辨率，同时对基材表现出优异的粘合性。 该化学放大抗蚀剂组合物包括：由本身不溶于碱性水溶液且至少包含（A）具有被特定保护基保护的羧酸或苯酚的单体单元I的聚合物组成的基础树脂的组合，以及 （B）具有含有环状碳酸酯结构的酯基或醚基的单体单元II，当单体单元I的保护基被酸的作用脱保护时，可溶于碱性水溶液; 以及能够产生当通过吸收成像辐射分解时能够引发单体单元I的保护基的脱保护的酸的光酸反应产物。

    Polysilphenylenesiloxane, production process thereof, and resist material and semiconductor device formed thereof
    19.
    发明授权
    Polysilphenylenesiloxane, production process thereof, and resist material and semiconductor device formed thereof 失效
    聚硅氧烷基硅氧烷，其制造方法以及由其形成的抗蚀剂材料和半导体器件

    公开(公告)号：US5484687A

    公开(公告)日：1996-01-16

    申请号：US98877

    申请日：1993-07-29

    申请人： Keiji Watanabe ,  Akira Oikawa ,  Shun-ichi Fukuyama ,  Masaaki Yamagami ,  Takahisa Namiki

    发明人： Keiji Watanabe ,  Akira Oikawa ,  Shun-ichi Fukuyama ,  Masaaki Yamagami ,  Takahisa Namiki

    IPC分类号： C08G77/52 ,  G03F7/075 ,  G03F7/26 ,  G03C5/16

    CPC分类号： G03F7/0757 ,  C08G77/52 ,  Y10S430/143 ,  Y10S430/168 ,  Y10S438/948

    摘要： Novel polysilphenylenesiloxanes having a three-dimensional mesh structure of silphenylenesiloxane core surrounded by triorganosilyl groups, which have a good sensitivity to ionizing radiations such as deep ultraviolet rays, electron beams and X-rays, a high softening point of 400.degree. C. or more, and a good resistance to O.sub.2 -plasma etching, and exhibit a high contrast and low swelling. These polysiphenylenesiloxanes are useful as a resist material, especially a top layer resist of the bi-level resist system and an interlevel dielectric or heat-resisting protective layer. The resist material has a high resolution because of a high contrast, low swelling and high thermal resistance thereof.

    摘要翻译： 具有由三有机甲硅烷基包围的硅烷基硅氧烷核心的三维网状结构的新型聚硅氧烷硅氧烷，其具有对电离辐射如深紫外线，电子束和X射线的高灵敏度，高软化点在400℃以上， 并且具有良好的耐等离子体蚀刻性，并且具有高对比度和低溶胀度。 这些多苯基硅氧烷可用作抗蚀剂材料，特别是双层抗蚀剂体系的顶层抗蚀剂和层间电介质或耐热保护层。 抗蚀剂材料由于对比度高，溶胀低，耐热性高而具有高分辨率。