公开(公告)号：US08361868B2

公开(公告)日：2013-01-29

申请号：US12768895

申请日：2010-04-28

Applicant: Paul A. Clifton

Inventor： Paul A. Clifton

IPC: H01L21/336

CPC classification number: H01L29/1054 ,  H01L29/7849

Abstract: Processes for making field effect transistors relax a buried stressor layer to induce strain in a silicon surface layer above the buried stressor layer. The buried stressor layer is relaxed and the surface layer is strained by implantation into at least the buried stressor layer, preferably on both sides of a portion of the surface layer that is to be stressed. For example, implanting ions through the surface silicon layer on either side of the gate structure of the preferred FET implementation into an underlying stressor layer can induce strain in a channel region of the FET. This process can begin with a silicon or silicon-on-insulator substrate with a buried silicon germanium layer having an appropriate thickness and germanium concentration. Other stressor materials can be used.

公开(公告)号：US08263466B2

公开(公告)日：2012-09-11

申请号：US12253835

申请日：2008-10-17

Applicant: Paul Clifton ,  Daniel J. Connelly

Inventor： Paul Clifton ,  Daniel J. Connelly

IPC: H01L21/336

CPC classification number: H01L29/7845 ,  H01L29/0673 ,  H01L29/458 ,  H01L29/66636 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/7848

Abstract: A process for forming a FET (e.g., an n-FET or a p-FET), in which during formation a metal which makes up a source or drain of the transistor is stressed so that stress is induced in a semiconductor channel of the transistor.

Abstract translation: 用于形成FET（例如，n-FET或p-FET）的工艺，其中在形成期间，构成晶体管的源极或漏极的金属受到应力，使得晶体管的半导体沟道中产生应力 。

公开(公告)号：US07851325B1

公开(公告)日：2010-12-14

申请号：US12209957

申请日：2008-09-12

Applicant: R. Stockton Gaines ,  Daniel J. Connelly ,  Paul A. Clifton

Inventor： R. Stockton Gaines ,  Daniel J. Connelly ,  Paul A. Clifton

IPC: H01L21/20

CPC classification number: H01L29/1054 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02664 ,  H01L21/76224 ,  H01L29/78 ,  H01L29/7846

Abstract: The present invention relates to creating an active layer of strained semiconductor using a combination of buried and sacrificial stressors. That is, a process can strain an active semiconductor layer by transferring strain from a stressor layer buried below the active semiconductor layer and by transferring strain from a sacrificial stressor layer formed above the active semiconductor layer. As an example, the substrate may be silicon, the buried stressor layer may be silicon germanium, the active semiconductor layer may be silicon and the sacrificial stressor layer may be silicon germanium. Elastic edge relaxation is preferably used to efficiently transfer strain to the active layer.

Abstract translation: 本发明涉及使用掩埋和牺牲应力源的组合来产生应变半导体的有源层。 也就是说，工艺可以通过从埋在有源半导体层下面的应力层传输应变并且通过从形成在有源半导体层上方的牺牲应力层转移应变而使活性半导体层变形。 作为示例，衬底可以是硅，所述埋置的应力层可以是硅锗，所述有源半导体层可以是硅，并且所述牺牲应力层可以是硅锗。 优选使用弹性边缘松弛以有效地将应变传递到活性层。

公开(公告)号：US07639738B2

公开(公告)日：2009-12-29

申请号：US11472196

申请日：2006-06-21

Applicant: Fernando Lopez de Victoria

Inventor： Fernando Lopez de Victoria

IPC: H03H7/30

CPC classification number: H04L25/03133 ,  H04L2025/03445

Abstract: A communication system includes a channel shortening filter to reduce intersymbol interference and facilitate recovery of communications. The channel shortening filter preferably includes a energy concentration filter that optimizes SNR or SINR or other performance criterion and a impulse response tail canceller filter that eliminates energy or, equivalently, cancels coefficients outside the allowed delay-spread window for the channel. Preferably the filters are calculated using signal decomposition.

Abstract translation: 一种通信系统包括一个通道缩短滤波器，以减少码间干扰并便于通信恢复。 通道缩短滤波器优选地包括能量浓度滤波器，其优化SNR或SINR或其他性能标准，以及脉冲响应尾部消除器滤波器，其消除能量或等效地消除用于信道的允许的延迟扩展窗口之外的系数。 优选地，使用信号分解来计算滤波器。

公开(公告)号：US20070297499A1

公开(公告)日：2007-12-27

申请号：US11472196

申请日：2006-06-21

Applicant: Fernando Lopez de Victoria

Inventor： Fernando Lopez de Victoria

IPC: H03K5/159 ,  H04B1/10

CPC classification number: H04L25/03133 ,  H04L2025/03445

Abstract: A communication system includes a channel shortening filter to reduce intersymbol interference and facilitate recovery of communications. The channel shortening filter preferably includes a energy concentration filter that optimizes SNR or SINR or other performance criterion and a impulse response tail canceller filter that eliminates energy or, equivalently, cancels coefficients outside the allowed delay-spread window for the channel. Preferably the filters are calculated using signal decomposition.

Abstract translation: 一种通信系统包括一个通道缩短滤波器，以减少码间干扰并便于通信恢复。 通道缩短滤波器优选地包括能量浓度滤波器，其优化SNR或SINR或其他性能标准，以及脉冲响应尾部消除器滤波器，其消除能量或等效地消除用于信道的允许的延迟扩展窗口之外的系数。 优选地，使用信号分解来计算滤波器。

公开(公告)号：US07112478B2

公开(公告)日：2006-09-26

申请号：US10754966

申请日：2004-01-09

Applicant: Daniel E. Grupp ,  Daniel J. Connelly

Inventor： Daniel E. Grupp ,  Daniel J. Connelly

IPC: H01L21/00 ,  H01L21/28 ,  H01L21/31 ,  H01L21/44 ,  H01L21/336 ,  H01L21/469 ,  H01L21/8234

CPC classification number: H01L29/47 ,  H01L21/28537 ,  H01L23/535 ,  H01L29/0649 ,  H01L29/0895 ,  H01L29/456 ,  H01L29/4908 ,  H01L29/66143 ,  H01L29/66636 ,  H01L29/66643 ,  H01L29/66666 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/66848 ,  H01L29/78 ,  H01L29/7827 ,  H01L29/7839 ,  H01L29/785 ,  H01L29/78696 ,  H01L29/812 ,  H01L29/8126 ,  Y10S438/958

Abstract: A transistor includes a semiconductor channel disposed nearby a gate and in an electrical path between a source and a drain, wherein the channel and at least one of the source or the drain are separated by an interface layer so as to form a channel-interface layer-source/drain junction in which a Fermi level of the semiconductor channel is depinned in a region near the junction and the junction has a specific contact resistance of less than approximately 1000 Ω-μm2. The interface layer may include a passivating material such as a nitride, a fluoride, an oxide, an oxynitride, a hydride and/or an arsenide of the semiconductor of the channel. In some cases, the interface layer consists essentially of a monolayer configured to depin the Fermi level of the semiconductor of the channel, or an amount of passivation material sufficient to terminate all or a sufficient number of dangling bonds of the semiconductor channel to achieve chemical stability of the surface. Also, the interface layer may include a separation layer of a material different than the passivating material. Where used, the separation layer has a thickness sufficient to reduce effects of metal-induced gap states in the semiconductor channel.

Abstract translation: 晶体管包括设置在栅极附近并且在源极和漏极之间的电气路径中的半导体沟道，其中所述沟道和源极或漏极中的至少一个由界面层分开以形成沟道界面层 源极/漏极结，其中半导体通道的费米能级水平在接合点附近的区域中，并且结点具有小于约1000Ωm2的特定接触电阻。 界面层可以包括通道的半导体的钝化材料，例如氮化物，氟化物，氧化物，氧氮化物，氢化物和/或砷化物。 在一些情况下，界面层基本上由被配置为消除通道的半导体的费米能级的单层或者足以终止半导体通道的全部或足够数量的悬挂键以达到化学稳定性的钝化材料的量 的表面。 此外，界面层可以包括与钝化材料不同的材料的分离层。 在使用时，分离层具有足以减少半导体通道中金属诱发的间隙状态的影响的厚度。

公开(公告)号：US20060013292A1

公开(公告)日：2006-01-19

申请号：US10894913

申请日：2004-07-19

Applicant: Alvin Despain

Inventor： Alvin Despain

IPC: H04B1/707

CPC classification number: H04B1/7097 ,  H04L25/03038

Abstract: A CDMA radio system uses an adaptive filter in a receiver to mitigate multipath radio propagation and to filter out interfering signals. Characteristics of an initial stage of the filter preferably are determined by cross correlation of a generated pilot signal and the input signal with the integration of the correlation performed over a time period selected to be an integral number of symbol periods. The integration causes the portions of the cross correlation corresponding to the user subchannels to average substantially to zero, so that the pilot channel signal correlation is the primary contribution to the signal used to characterize the channel to establish the coefficients of the adaptive filter for the receiver.

Abstract translation: CDMA无线电系统在接收机中使用自适应滤波器来减轻多径无线电传播并滤除干扰信号。 优选地，滤波器的初始阶段的特性通过所生成的导频信号和输入信号的互相关相关来确定，其中所选择的相关时间选择为整数个符号周期。 整合使得与用户子信道相对应的互相关的部分基本上平均为零，使得导频信道信号相关性是用于表征信道的信号的主要贡献，以建立用于接收机的自适应滤波器的系数 。

公开(公告)号：US5961582A

公开(公告)日：1999-10-05

申请号：US330622

申请日：1994-10-25

Applicant: R. Stockton Gaines

Inventor： R. Stockton Gaines

IPC: G06F9/48 ,  G06F9/46

CPC classification number: G06F9/4843

Abstract: A method and system for providing access to resources at a host computer to a remote user, without requiring the remote user to have detailed knowledge of the host computer. The system includes a host virtual operating system, resident on a host computer and having a set of resources including process control, a file system, interprocess communications, and a set of device interfaces, overlaid on and distinguished from the host computer's actual resources. The virtual host is capable of executing programs in a standardized programming language, to provide the ability to run programs that are host-independent. The virtual host is capable of limiting access to the host computer's actual resources. The system also includes a front-end invoked by the remote user. A server program at the host computer receives requests from a client program run by the remote user, and provides the virtual host operating system at the host computer. The server program includes an interpreter for the (interpreted) programming language, a process control subsystem, and a virtual file subsystem. The programming language includes a set of primitive commands for invoking the primitive operations of the process control subsystem, including interprocess communication primitive operations, and a set of primitive commands for invoking the primitive operations of the virtual file subsystem. The process control subsystem and the virtual file subsystem translate those primitive operations into a set of primitive operations provided by the host computer, and call upon those primitive operations provided by the host computer.

Abstract translation: 一种用于向主机提供对远程用户资源的访问的方法和系统，而不需要远程用户具有主计算机的详细知识。 该系统包括主机虚拟操作系统，其驻留在主计算机上并具有包括过程控制，文件系统，进程间通信以及覆盖在主机计算机的实际资源上并与之区别的一组设备接口的一组资源。 虚拟主机能够以标准化的编程语言执行程序，以提供运行与主机无关的程序的能力。 虚拟主机能够限制对主机计算机实际资源的访问。 系统还包括由远程用户调用的前端。 主计算机上的服务器程序从远程用户运行的客户端程序接收请求，并在主机上提供虚拟主机操作系统。 服务器程序包括用于（解释）编程语言的解释器，过程控制子系统和虚拟文件子系统。 编程语言包括用于调用过程控制子系统的原始操作的一组原始命令，包括进程间通信原语操作，以及用于调用虚拟文件子系统的原始操作的一组原始命令。 过程控制子系统和虚拟文件子系统将这些原始操作转换成由主计算机提供的一组原始操作，并调用由主计算机提供的那些原始操作。

公开(公告)号：US10170627B2

公开(公告)日：2019-01-01

申请号：US15816231

申请日：2017-11-17

Applicant: Acorn Technologies, Inc.

Inventor： Paul A. Clifton ,  Andreas Goebel ,  Walter A. Harrison

IPC: H01L29/00 ,  H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L29/78 ,  B82Y10/00 ,  H01L29/417 ,  H01L29/775 ,  H01L29/08

Abstract: A nanowire transistor includes undoped source and drain regions electrically coupled with a channel region. A source stack that is electrically isolated from a gate conductor includes an interfacial layer and a source conductor, and is coaxially wrapped completely around the source region, extending along at least a portion of the source region. A Schottky barrier between the source conductor and the source region is a negative Schottky barrier and a concentration of free charge carriers is induced in the semiconductor source region.

公开(公告)号：US09905691B2

公开(公告)日：2018-02-27

申请号：US15048877

申请日：2016-02-19

Applicant: Acorn Technologies, Inc.

Inventor： Daniel E. Grupp ,  Daniel J. Connelly

IPC: H01L29/51 ,  H01L21/31 ,  H01L29/78 ,  H01L29/872 ,  H01L29/16 ,  H01L29/161

CPC classification number: H01L29/456 ,  H01L21/28537 ,  H01L29/0895 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/45 ,  H01L29/47 ,  H01L29/66143 ,  H01L29/66643 ,  H01L29/78 ,  H01L29/7839 ,  H01L29/785 ,  H01L29/806 ,  H01L29/812 ,  H01L29/872

Abstract: An electrical device in which an interface layer is disposed in between and in contact with a conductor and a semiconductor.