公开(公告)号：US20230057388A1

公开(公告)日：2023-02-23

申请号：US17792891

申请日：2021-01-15

Applicant: OCI Company Ltd. ,  Research & Business Foundation SUNGKYUNKWAN UNIVER

Inventor： Younghun Park ,  Eungchul Kim ,  Taesung Kim ,  Sangyup Lee ,  Kyungyeol Kim ,  Hwisu Oh

IPC: B03C3/017 ,  B03C3/014 ,  B03C3/45

Abstract: The present invention relates to a method for separating and collecting single aggregates from fumed silica, and a method for classifying a shape of the collected single aggregates, and more specifically, includes preparing a slurry in which fumed silica is dispersed in water; aerosolizing the slurry; and collecting single aggregates of the finned silica in the aerosol using the electric field.

公开(公告)号：US11029363B2

公开(公告)日：2021-06-08

申请号：US16156409

申请日：2018-10-10

Applicant: OCI Company Ltd.

Inventor： MyungSup Um ,  HeeChang Ye

IPC: G01N27/416 ,  G01R31/392 ,  G01R31/36 ,  G01R31/374 ,  G01R31/382 ,  G01R31/3835 ,  G01R31/3842 ,  G01R31/396 ,  G01R31/367 ,  G01R31/385

Abstract: Provided is a device including an acquisition unit configured to obtain a time taken for a voltage level of a battery in a charge mode to change for each of a plurality of voltage sections, and a prediction unit configured to predict a state of health (SOH) of the battery based on ratio information determined by comparing the time obtained for each of the plurality of voltage sections with a reference time for each of the plurality of voltage sections. When the time taken for some voltage sections of the plurality of voltage sections is obtained by the acquisition unit, the prediction unit corrects the predicted SOH of the battery based on the time taken for the voltage level of the battery in a discharge mode to change.

公开(公告)号：US20180201398A1

公开(公告)日：2018-07-19

申请号：US15742100

申请日：2016-07-06

Applicant: OCI Company Ltd.

Inventor： Hyun Cheol KIM ,  Shin KIM

IPC: B65B11/10 ,  B65B41/16 ,  B65B57/04 ,  B65H23/04

Abstract: The present invention relates to a packing system including a transporting device, an erecting device, and a guiding device. The packing system is configured to reduce the number of a packing process and to simplify the packing process, thereby improving production efficiency, compared with a conventional system. The packing system is configured to minimize wrinkling of a packing material and to adjust position of ends of the packing material in a way that the packing material is always supplied to a predetermined position, thereby reducing a failure rate of a packed product. It is possible to pack various sizes of packing target objects using a single system.

公开(公告)号：US09673449B2

公开(公告)日：2017-06-06

申请号：US14334043

申请日：2014-07-17

Applicant: OCI COMPANY LTD.

Inventor： Yo-Seop Kim ,  Eun-Hye Jeong ,  Sung-Ho Jung ,  Hyung-Rak Kim

IPC: H01M4/04 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/36 ,  H01M4/38 ,  H01M4/587 ,  H01M4/13

CPC classification number: H01M4/386 ,  H01M4/0404 ,  H01M4/0471 ,  H01M4/13 ,  H01M4/364 ,  H01M4/587

Abstract: Silicon slurry for anode active materials of secondary batteries is provided. The silicon slurry includes silicon particles and a dispersion medium. The silicon slurry satisfies dispersion conditions of 1≦D90/D50≦2.5 and 2 nm

公开(公告)号：US09278864B2

公开(公告)日：2016-03-08

申请号：US14432900

申请日：2013-10-02

Applicant: OCI COMPANY LTD. ,  INSTITUTE OF ION-PLASMA AND LASER TECHNOLOGIES

Inventor： Taek Joong Kim ,  Yong Il Kim ,  Kyung Yeol Kim ,  Deok Yun Kim ,  Ashurov Khatam ,  Salikhov Shavkat ,  Rotshteyn Vladimir ,  Ashurova Khekayat ,  Kurbanov Aziz ,  Abdisaidov Ilyos ,  Azizov Sultan ,  Ashurov Rustam

IPC: C01B33/04 ,  B01J23/72

CPC classification number: C01B33/043 ,  B01J23/72

Abstract: Provided is a method for preparing monosilane, more particularly a method for economically preparing monosilane, which is useful for the composition of a thin semiconductor structure and multipurpose high-purity polycrystalline silicon, by preparing monosilane with high purity and high yield using trialkoxysilane.

Abstract translation: 本发明提供一种制备单硅烷的方法，特别是一种经济地制备单硅烷的方法，其可用于薄半导体结构和多用途高纯度多晶硅的组成，通过使用三烷氧基硅烷制备高纯度和高产率的甲硅烷。

公开(公告)号：US09156861B2

公开(公告)日：2015-10-13

申请号：US14241581

申请日：2012-03-30

Applicant: Se In Yang ,  Yong Il Kim ,  Kyung Yeol Kim ,  Deok Yun Kim ,  Ashurov Khatam ,  Abdurakhmanov Boris ,  Rotshteyn Vladimir ,  Salikhov Shavkat ,  Ashurova Khekayat ,  Salimboev Akmal ,  Azizov Sultan ,  Saidov Sabir

Inventor： Se In Yang ,  Yong Il Kim ,  Kyung Yeol Kim ,  Deok Yun Kim ,  Ashurov Khatam ,  Abdurakhmanov Boris ,  Rotshteyn Vladimir ,  Salikhov Shavkat ,  Ashurova Khekayat ,  Salimboev Akmal ,  Azizov Sultan ,  Saidov Sabir

IPC: C07F7/00 ,  C07F7/02 ,  C07F7/04 ,  B01J23/72

CPC classification number: C07F7/025 ,  B01J23/72 ,  C07F7/04

Abstract: The present invention relates to a method for preparing SiH(OR3)-type trialkoxysilane (wherein, R is a C1-C3 methyl, ethyl, propyl or isopropyl group), and more specifically, the method comprises the steps of: preventing the oxidation of a silicon surface by pulverizing raw silicon material in a solvent environment without contact with the air so that the initial induction period of the direct synthesis of trialkoxysilane is dramatically reduced; and removing impurities from a reaction environment by continuously selecting a part of the solvent through a membrane filter provided in a reactor body.

Abstract translation: 本发明涉及一种制备SiH（OR3）型三烷氧基硅烷（其中R为C1-C3甲基，乙基，丙基或异丙​​基）的方法，更具体地说，该方法包括以下步骤： 通过在溶剂环境中粉碎原料硅而不与空气接触的硅表面，使得直接合成三烷氧基硅烷的初始诱导期显着降低; 以及通过设置在反应器主体中的膜过滤器连续选择一部分溶剂从反应环境中除去杂质。

公开(公告)号：US20240059967A1

公开(公告)日：2024-02-22

申请号：US18227454

申请日：2023-07-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Daihyun KIM ,  Taesoo KWON ,  Yeonsoek YOO ,  Mihyun PARK ,  Sangwon BAE ,  Hyosan LEE ,  Wook JANG

IPC: C09K13/06 ,  H01L29/66

CPC classification number: C09K13/06 ,  H01L29/66795

Abstract: An etching composition for etching a titanium aluminum nitride layer and a method of manufacturing an integrated circuit, the etching composition includes about 15 wt % to about 30 wt % of an oxidizing agent; about 1 wt % to about 10 wt % of a pH adjusting agent, the pH adjusting agent including an inorganic acid or an organic acid; about 0.001 wt % to about 1 wt % of an etching booster; and a solvent, all wt % being based on a total weight of the etching composition.

公开(公告)号：US20230141427A1

公开(公告)日：2023-05-11

申请号：US18054439

申请日：2022-11-10

Applicant: OCI Company Ltd.

Inventor： Gabok KIM ,  Byungchang KANG ,  Byunghyun PARK ,  Junki JEON ,  Changwon JEONG ,  Seungan CHYUN

IPC: C30B25/10 ,  C30B25/18 ,  C30B29/36

CPC classification number: C30B25/10 ,  C30B25/18 ,  C30B29/36

Abstract: A method of preparing a high-purity silicon carbide (SiC) crystal, and more specifically, to a method of preparing high-purity SiC having an extremely low impurity content in an excellent yield and in large quantities. The method including preparing a reactor containing a reaction chamber; heating the conductive heating element in the reaction chamber; mixing a silicon precursor, a carbon precursor, and a carrier gas; injecting the mixed gas into the reaction chamber, depositing SiC on the conductive heating element and harvesting the deposited SiC crystals.

公开(公告)号：US10483564B2

公开(公告)日：2019-11-19

申请号：US15641870

申请日：2017-07-05

Applicant: OCI COMPANY LTD.

Inventor： Sung Seek Ham ,  Myung Sup Um ,  Byung Chul Kim ,  Sang Eun Park ,  Nam Jin Lee

IPC: H01M8/04082 ,  H01M8/18 ,  H01M8/04 ,  H01M8/02 ,  H01M8/10

Abstract: A flow frame for a redox flow battery includes: a frame body having a plate-like shape and an electrode hole in its center where an electrode is to be disposed; four through holes disposed at corners of the frame body, respectively; a flow channel disposed at a front of the frame body above and below the electrode hole so that two of the through channels diagonal to each other as a pair are connected to each other via the electrode hole; through channels disposed at distal ends of the flow channel to cause electrolyte flows toward a rear of the frame body; and a distribution channel connecting the through channels with the electrode hole at the rear of the frame body. The flow channel has at least one branch point, and a change in cross sectional area of the flow channel before and after the branch point is 10% or less.

公开(公告)号：US10193148B2

公开(公告)日：2019-01-29

申请号：US14835715

申请日：2015-08-26

Applicant: OCI COMPANY LTD.

Inventor： Sung-Ho Jung ,  Yo-Seop Kim ,  Eun-Hye Jeong ,  Jeong-Hyun Ha

IPC: H01M4/38 ,  H01M4/583 ,  H01M4/134 ,  H01M4/62 ,  H01M10/052

Abstract: Disclosed herein are a manufacturing method of a carbon-silicon composite, the manufacturing method including: (a) preparing a silicon-carbon-polymer matrix slurry including a silicon slurry, carbon particles, a monomer of polymer, and a cross-linking agent; (b) performing a heat treatment process on the silicon-carbon-polymer matrix slurry to manufacture a silicon-carbon-polymer carbonized matrix; (c) pulverizing the silicon-carbon-polymer carbonized matrix to manufacture a silicon-carbon-polymer carbonized matrix structure; and (d) mixing the silicon-carbon-polymer carbonized matrix structure with a first carbon raw material and performing a carbonization process to manufacture a carbon-silicon composite, the carbon-silicon composite, an anode for a secondary battery manufactured by applying the carbon-silicon composite, and a secondary battery including the anode for a secondary battery.