摘要:
A vibration-type cantilever holder holds a cantilever opposed to a sample. The holder supports a main body part of the cantilever at only its base end so that a probe at the free end of the cantilever can contact the sample. The holder has a cantilever-attaching stand on which the main body part is placed and fastened such that the cantilever is tilted at a predetermined angle with respect to the sample. A first vibration source is fastened to the cantilever-attaching stand and vibrates with a phase and an amplitude depending on a predetermined waveform signal, and the first vibration source is fastened at a first location to a holder main body. A second vibration source is fastened at a second location, which is spaced from the first location, to the holder main body and generates vibrations to offset vibrations traveling from the first vibration source to the cantilever-attaching stand and holder main body. The holder allows the cantilever to vibrate according to the vibrational characteristics of only the cantilever by counteracting additional vibrations.
摘要:
There is provided a differential scanning calorimeter in which a base line stability and a responsiveness are improved. There is made a constitution in which the stability is ensured by making a neck-like part in a heat passage from a heat reservoir 1 to a sensor plate 4 and, at the same time, a two-dimension heat flow passage to a sample holder 5a is ensured.
摘要:
A wafer holder includes: a frame-shaped holder main body which has an opening at its center and carries a wafer on its upper surface; guide members which contact the outer periphery of the wafer placed on the holder main body and position the wafer on the holder main body; and cross section sample holding members which are disposed on an outer circumference of the holder main body and holds a cross section sample produced from the wafer. Each of the cross section sample holding members includes plate-shaped sample stands to which the cross section sample is fixed, and fixing stands each of which is detachably attached to the holder main body and pinches the sample stand such that the sample stand is attachable to and detachable from the fixing stand.
摘要:
In a method of measuring a thin film sample of irradiating an electron beam to a thin film sample, detecting a generated secondary electron and measuring a film thickness of the thin film sample by utilizing the secondary electron, it is provided that the film thickness is measured accurately, in a short period of time and easily even when a current amount of the irradiated electron beam is varied. An electron beam 2b is irradiated, and a generated secondary electron 4 is detected by a secondary electron detector 6. A calculated value constituted by an amount of a secondary electron detected at a film thickness measuring region and an amount of a secondary electron detected at a reference region is calculated by first calculating means 11. A film thickness of the film thickness measuring region can be calculated from a calibration data of a standard thin film sample and the calculated value calculated by a sample 5.
摘要:
A scanning probe microscope has a self-detection type probe structure including a cantilever having an electrically conductive probe at a distal end thereof, a supporting part, and a piezoresistance element whose resistance value changes depending on the deflection of the cantilever. A detector applies a predetermined voltage to the piezoresistance element and detects the value of the current passing through the piezoresistance element to detect deflection of the cantilever. A sample table mounts a sample such that a surface of the sample confronts a tip of the probe, and a moving mechanism relatively moves the sample table and the probe tip in X, Y and Z directions. A controller controls the moving mechanism to maintain a fixed distance between the probe tip and the sample surface and measures the surface shape of the sample on the basis of the detection result of the detector. A predetermined voltage is applied between the probe and the sample surface, and a measuring part operates simultaneously with the detector and measures electrical property information caused by the applied voltage.
摘要:
In a manipulator needle portion defect repairing method, the existence of an abrasion or a fracture in a needle portion for holding a sample at an end of a manipulator disposed in an FIB device is confirmed using a microscope function of the FIB device. The abrasion or the fracture in the needle portion is then repaired by chemical vapor deposition using a focused ion beam of the FIB device.
摘要:
In order to establish processing techniques capable of making multi-tip probes with sub-micron intervals and provide such microscopic multi-tip probes, there is provided an outermost surface analysis apparatus for semiconductor devices etc. provided with a function for enabling positioning to be performed in such a manner that there is no influence on measurement in electrical measurements at an extremely small region using this microscopic multi-tip probe, and there are provided the steps of making a cantilever 1 formed with a plurality of electrodes 3 using lithographic techniques, and forming microscopic electrodes 6 minute in pitch by sputtering or gas-assisted etching a distal end of the cantilever 1 using a focused charged particle beam or using CVD.
摘要:
A focused ion beam apparatus having two pieces of probers brought into contact with two points of a surface of a sample, a voltage source for applying a constant voltage between the two points with which the probers are brought into contact, and an ammeter for measuring a current flowing between the two points, in which a conductive film is formed to narrow a gap thereof between the two points by operating a deflection electrode and a gas gun and the current flowing between the two points is monitored, and when the current becomes a predetermined value, a focused charged particle beam irradiated to the surface of the sample is made OFF by the blanking electrode.
摘要:
The invention provides a fine-adjustment mechanism for a scanning probe microscopy with high rigidity and high degree of measurement accuracy wherein a strain gauge displacement sensor which can be installed in a small space is arranged so that temperature compensation is achieved. The fine-adjustment mechanism composed of a piezoelectric device is provided with at least two-piece electrode. One of the electrodes is configured as a dummy electrode, to which no voltage is applied, and the other electrode is configured as an active electrode which generates strain when voltage is applied. One or two resistors are provided on each of the active electrode and dummy electrode, and a bridge circuit is configured by the resistors.
摘要:
A scanning probe microscope has a cantilever having a minute probe on a distal end thereof and a displacement detecting device for detecting displacement of the cantilever. A Z-axis controlling amount calculating mechanism calculates a controlling amount for keeping constant a displacement amount of the cantilever. A Z-axis driving mechanism drives in a Z direction the cantilever or a sample in accordance with the controlling amount from the Z-axis controlling amount calculating mechanism. An XY scanning mechanism relatively moves the probe in a direction of an XY plane with respect to the sample to measure an uneven shape and/or a physical characteristic of the surface of the sample. A controlling range limiting device limits a driving range of the Z-axis driving mechanism. A controlling range setting device optionally sets the driving range of the Z-axis driving mechanism.