公开(公告)号：US20070114460A1

公开(公告)日：2007-05-24

申请号：US11546124

申请日：2006-10-10

Applicant: Masashi Muramatsu ,  Tomokazu Kozakai ,  Ryoji Hagiwara

Inventor： Masashi Muramatsu ,  Tomokazu Kozakai ,  Ryoji Hagiwara

IPC: G21K5/10

CPC classification number: H01J37/3056 ,  H01J37/3045 ,  H01J2237/30483 ,  H01J2237/31744 ,  H01J2237/31749

Abstract: A reference area that contains a straight contour of a workpiece pattern is irradiated with a beam at a fixed interval to form images. The positions of the contour line in the images before and after a certain time of image formation are compared with each other and the amount of displacement between the positions is calculated. When the workpiece is processed, the beam is applied to the process position corrected by the amount of displacement.

Abstract translation: 包含工件图案的直线轮廓的参考区域以固定间隔用光束照射以形成图像。 在图像形成的一定时间之前和之后的图像中的轮廓线的位置彼此进行比较，并且计算位置之间的位移量。 当工件被处理时，梁被施加到通过位移量校正的过程位置。

公开(公告)号：US20080302979A1

公开(公告)日：2008-12-11

申请号：US11918171

申请日：2006-04-17

Applicant: Tomokazu Kozakai

Inventor： Tomokazu Kozakai

IPC: H01J37/08

CPC classification number: H01J37/304 ,  C23C16/047 ,  G03F1/74 ,  H01J2237/31732 ,  H01J2237/3174

Abstract: Even in a case where it is one whose size is smaller than an irradiation width of a focused ion beam, it is possible to desirably work its place desired to be worked.A working method by focused ion beam I, which performs a deposition working or an etching working to a work piece 90 by irradiating the focused ion beam to the work piece 90, wherein as a dose quantity is increased by irradiating the focused ion beam I to an edge E of the work piece 90 and controlling the dose quantity of the focused ion beam, a region gradually worked spreads from the edge, thereby deposition-working or etching-working the work piece 90.

Abstract translation: 即使是其尺寸小于聚焦离子束的照射宽度的情况，也可以期望地加工其所需的加工位置。 通过聚焦离子束I的工作方法，其通过将聚焦离子束照射到工件90进行对工件90的沉积加工或蚀刻加工，其中通过将聚焦离子束I照射到 工件90的边缘E并控制聚焦离子束的剂量，逐渐加工的区域从边缘扩散，从而对工件90进行沉积加工或蚀刻加工。

公开(公告)号：US07323685B2

公开(公告)日：2008-01-29

申请号：US10543843

申请日：2004-02-16

Applicant: Kazuo Aita ,  Osamu Takaoka ,  Tomokazu Kozakai

Inventor： Kazuo Aita ,  Osamu Takaoka ,  Tomokazu Kozakai

IPC: H01J37/304

CPC classification number: H01J37/265 ,  H01J37/28 ,  H01J2237/244 ,  H01J2237/24475 ,  H01J2237/2487 ,  H01J2237/2826 ,  H01J2237/31744 ,  H01J2237/31749

Abstract: When scanning by an ion beam in advance an area 24 including a reference hole 23 formed at a position other than the area to be processed 25 of a light-shielding film 21 on a glass substrate 22, a secondary ion signal of the same atom as the incident ions injected into the substrate is detected instead of detecting the secondary ion signal of the atoms included in the base film, and the position 23 of the hole is stored. Then, the area 24 including the hole formed during the processing is scanned and the secondary ion signal of the same atom as the incident ions is detected to determine the current position 26 of the hole, the position of the hole obtained by the previous detection and the current position of the hole are compared, and the amount of shift of the position of the hole is determined. This shifted amount is regarded as the drift amount.

Abstract translation: 当预先通过离子束扫描包括形成在玻璃基板22上的遮光膜21的除被处理区域25以外的位置的基准孔23的区域24时，具有相同原子的二次离子信号 检测注入到基板中的入射离子，而不是检测基膜中包含的原子的二次离子信号，并且存储孔的位置23。 然后，扫描包括在处理过程中形成的孔的区域24，并且检测与入射离子相同的原子的二次离子信号，以确定孔的当前位置26，通过先前检测获得的孔的位置，以及 比较孔的当前位置，并确定孔的位置的移动量。 该偏移量被认为是漂移量。

公开(公告)号：US08963100B2

公开(公告)日：2015-02-24

申请号：US13654509

申请日：2012-10-18

Applicant: Anto Yasaka ,  Fumio Aramaki ,  Yasuhiko Sugiyama ,  Tomokazu Kozakai ,  Osamu Matsuda

Inventor： Anto Yasaka ,  Fumio Aramaki ,  Yasuhiko Sugiyama ,  Tomokazu Kozakai ,  Osamu Matsuda

IPC: H01J37/08 ,  G21K5/04 ,  H01J37/305

CPC classification number: H01J27/024 ,  H01J27/26 ,  H01J37/08 ,  H01J37/3056 ,  H01J2237/0807 ,  H01J2237/182

Abstract: A focused ion beam apparatus has an ion source chamber in which is disposed an emitter for emitting ions. A gas supply unit supplies nitrogen gas to the ion source chamber so that the nitrogen gas adsorbs on the surface of the emitter, and the gas supply unit maintains the pressure in the ion source chamber in the range 1.0×10−6 Pa to 1.0×10−2 Pa. An extracting electrode is spaced from the emitter, and a voltage is applied to the extracting electrode to ionize the adsorbed nitrogen gas and extract nitrogen ions in the form of an ion beam. A temperature control unit controls the temperature of the emitter.

Abstract translation: 聚焦离子束装置具有离子源室，其中设置有用于发射离子的发射极。 气体供给单元向离子源室供给氮气，使得氮气吸附在发射体的表面，气体供给单元将离子源室内的压力维持在1.0×10 -6 Pa〜1.0× 10-2Pa。提取电极与发射极间隔开，电压施加到提取电极，使吸附的氮气离子化，并以离子束的形式提取氮离子。 温度控制单元控制发射器的温度。

公开(公告)号：US07576340B2

公开(公告)日：2009-08-18

申请号：US11542434

申请日：2006-10-03

Applicant: Ryoji Hagiwara ,  Yasuhiko Sugiyama ,  Tomokazu Kozakai

Inventor： Ryoji Hagiwara ,  Yasuhiko Sugiyama ,  Tomokazu Kozakai

IPC: H01J37/30 ,  H01J37/244

CPC classification number: G03F1/74 ,  H01J2237/31744 ,  H01J2237/31749

Abstract: There is provided a focused ion beam processing method in which damage to a workpiece is minimized when the surface of the workpiece is irradiated and processed with an ion beam. The method comprises the steps of: generating an acceleration voltage between an ion source and a workpiece; focusing an ion beam emitted from the ion source; and applying the ion beam to a predetermined process position to process the surface of the workpiece. In this process, the energy level of the ion beam produced by the acceleration voltage is set within a range from at least 1 keV to less than 20 keV.

Abstract translation: 提供了一种聚焦离子束处理方法，其中当用离子束照射和处理工件的表面时，对工件的损伤最小化。 该方法包括以下步骤：在离子源和工件之间产生加速电压; 聚焦离子源发射的离子束; 并将离子束施加到预定的处理位置以处理工件的表面。 在该过程中，由加速电压产生的离子束的能级设定在从1keV至小于20keV的范围内。

公开(公告)号：US07927769B2

公开(公告)日：2011-04-19

申请号：US12380872

申请日：2009-03-03

Applicant: Ryoji Hagiwara ,  Osamu Takaoka ,  Tomokazu Kozakai

Inventor： Ryoji Hagiwara ,  Osamu Takaoka ,  Tomokazu Kozakai

IPC: G03F1/00

CPC classification number: G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/80

Abstract: A method for fabricating an extreme ultraviolet lithography (EUVL) mask. In an etching step, at least a part of an absorption layer of an EUVL mask is etched by allowing a charged particle to irradiate the absorption layer under feed of a halogenated xenon gas. In an oxidant feed step, an oxidant is fed to the absorption layer after the etching step to form an oxidized layer at a side surface of the absorption layer that is not etched during the etching step.

Abstract translation: 一种用于制造极紫外光刻（EUVL）掩模的方法。 在蚀刻步骤中，通过使带电粒子在卤化氙气的供给下照射吸收层，对EUVL掩模的吸收层的至少一部分进行蚀刻。 在氧化剂进料步骤中，在蚀刻步骤之后，将氧化剂进料到吸收层，以在蚀刻步骤期间未被蚀刻的吸收层的侧表面上形成氧化层。

公开(公告)号：US07750318B2

公开(公告)日：2010-07-06

申请号：US11918171

申请日：2006-04-17

Applicant: Tomokazu Kozakai

Inventor： Tomokazu Kozakai

IPC: A61N5/00 ,  G21G5/00

CPC classification number: H01J37/304 ,  C23C16/047 ,  G03F1/74 ,  H01J2237/31732 ,  H01J2237/3174

Abstract: A first working process performs a deposition working or an etching working to a workpiece by face-irradiating a focused ion beam to the workpiece, and a second working process then performs a deposition working or an etching working to the workpiece by edge-irradiating a focused ion beam to an edge of the workpiece. During the first working process, the deposition working or the etching working is performed to add the missing portion or remove the excess portion to a point slightly short of the edge boundary of the workpiece, i.e., to a point that is less than the irradiation width of the focused ion beam. The remaining missing portion or the remaining excess portion is eliminated in the second working process by edge-irradiating the focused ion beam to the edge of the workpiece.

Abstract translation: 第一工作过程通过将聚焦离子束面向工件进行对工件的沉积加工或蚀刻加工，然后第二工作过程通过边缘照射聚焦来对工件进行沉积加工或蚀刻加工 离子束到工件的边缘。 在第一工作过程中，执行沉积工作或蚀刻加工以增加缺失部分或将多余部分移除到略短于工件边缘边界的点，即小于照射宽度 的聚焦离子束。 通过将聚焦离子束边缘照射到工件的边缘，在第二工作过程中消除剩余的缺损部分或剩余的多余部分。

公开(公告)号：US20070114462A1

公开(公告)日：2007-05-24

申请号：US11586232

申请日：2006-10-25

Applicant: Masashi Muramatsu ,  Tomokazu Kozakai ,  Ryoji Hagiwara

Inventor： Masashi Muramatsu ,  Tomokazu Kozakai ,  Ryoji Hagiwara

IPC: G21K5/10

CPC classification number: H01J37/3026 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/222 ,  H01J37/265 ,  H01J37/28 ,  H01J37/3174 ,  H01J2237/2809 ,  H01J2237/2813 ,  H01J2237/30461 ,  H01J2237/30488 ,  H01J2237/31761

Abstract: A computer sets a process area based on an image obtained by observing a mask, and determines the positions of representative points that form a contour of the process area for each pixel with sub-pixel accuracy that is better than a pixel, the position of each of the representative points being able to be set to either the center position of the pixel or a position displaced therefrom. Furthermore, for the pixels within the process area, the computer sets the center positions of the pixels as the representative points and corrects the positions of the representative points of the pixels within the process area on a sub-pixel basis such that nonuniformity between the representative points is reduced. When the mask is processed, the charged particle beam is applied with sub-pixel accuracy to the positions of the representative points that form the contour for the pixels that includes the contour of the process area and to the positions of the corrected representative points for the pixels within the process area.

Abstract translation: 计算机基于通过观察掩模获得的图像来设置处理区域，并且确定形成每个像素的处理区域的轮廓的代表点的位置，其中子像素精度优于像素，每个像素的位置 能够将代表点设置为像素的中心位置或从其偏移的位置。 此外，对于处理区域内的像素，计算机将像素的中心位置设置为代表点，并且在子像素的基础上校正处理区域内的像素的代表点的位置，使得代表之间的不均匀性 积分减少。 当处理掩模时，将带电粒子束以子像素精度施加到形成用于包括处理区域的轮廓的像素的轮廓的代表点的位置以及针对该处理区域的修正的代表点的位置 处理区域内的像素。

公开(公告)号：US20090226825A1

公开(公告)日：2009-09-10

申请号：US12380872

申请日：2009-03-03

Applicant: Ryoji Hagiwara ,  Osamu Takaoka ,  Tomokazu Kozakai

Inventor： Ryoji Hagiwara ,  Osamu Takaoka ,  Tomokazu Kozakai

IPC: G03F1/00

CPC classification number: G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/80

Abstract: A method for fabricating EUVL mask, by which the pattern of absorption layer can be fabricated at a high precision is provided. The method includes an etching step of etching black defect of the absorption layer of the EUVL mask by the irradiation of ion beam on the absorption layer under feed of xenon fluoride gas and further includes an oxidant feed step for feeding oxidant gas to the absorption layer after the etching step, and the etching step and the oxidant feed step are alternately carried out at plural times.

Abstract translation: 提供了一种制造EUVL掩模的方法，通过该方法可以高精度地制造吸收层的图案。 该方法包括蚀刻步骤，通过在氙氟化物气体的进料下在吸收层上照射离子束来蚀刻EUVL掩模的吸收层的黑色缺陷，并且还包括氧化剂进料步骤，用于在氧化物进料步骤 蚀刻步骤和蚀刻步骤以及氧化剂进料步骤被多次交替进行。

公开(公告)号：US07488961B2

公开(公告)日：2009-02-10

申请号：US11586232

申请日：2006-10-25

Applicant: Masashi Muramatsu ,  Tomokazu Kozakai ,  Ryoji Hagiwara

Inventor： Masashi Muramatsu ,  Tomokazu Kozakai ,  Ryoji Hagiwara

IPC: A61N5/00 ,  H01J37/302

CPC classification number: H01J37/3026 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/222 ,  H01J37/265 ,  H01J37/28 ,  H01J37/3174 ,  H01J2237/2809 ,  H01J2237/2813 ,  H01J2237/30461 ,  H01J2237/30488 ,  H01J2237/31761

Abstract: A computer sets a process area based on an image obtained by observing a mask, and determines the positions of representative points that form a contour of the process area for each pixel with sub-pixel accuracy that is better than a pixel, the position of each of the representative points being able to be set to either the center position of the pixel or a position displaced therefrom. Furthermore, for the pixels within the process area, the computer sets the center positions of the pixels as the representative points and corrects the positions of the representative points of the pixels within the process area on a sub-pixel basis such that nonuniformity between the representative points is reduced. When the mask is processed, the charged particle beam is applied with sub-pixel accuracy to the positions of the representative points that form the contour for the pixels that includes the contour of the process area and to the positions of the corrected representative points for the pixels within the process area.

Abstract translation: 计算机基于通过观察掩模获得的图像来设置处理区域，并且确定形成每个像素的处理区域的轮廓的代表点的位置，其中子像素精度优于像素，每个像素的位置 能够将代表点设置为像素的中心位置或从其偏移的位置。 此外，对于处理区域内的像素，计算机将像素的中心位置设置为代表点，并且在子像素的基础上校正处理区域内的像素的代表点的位置，使得代表之间的不均匀性 积分减少。 当处理掩模时，将带电粒子束以子像素精度施加到形成用于包括处理区域的轮廓的像素的轮廓的代表点的位置以及针对该处理区域的修正的代表点的位置 处理区域内的像素。