公开(公告)号：US08735286B2

公开(公告)日：2014-05-27

申请号：US13284431

申请日：2011-10-28

Applicant: Rishi Kant ,  Roger Thomas Howe

Inventor： Rishi Kant ,  Roger Thomas Howe

IPC: H01L21/44

CPC classification number: B81C1/00333 ,  B81C2201/0116

Abstract: A method for sealing through-holes in a material via material diffusion, without the deposition of a sealant material, is disclosed. The method is well suited to the fabrication and packaging of microsystems technology-based devices and systems. In some embodiments, the method comprises forming sacrificial material release through-holes through a structural layer, removing the sacrificial material via an etch that etches the sacrificial material through the release through-holes, and sealing of the release through-holes via material diffusion.

Abstract translation: 公开了一种用于通过材料扩散密封材料中的通孔的方法，而不会密封材料的沉积。 该方法非常适合基于微系统技术的设备和系统的制造和封装。 在一些实施例中，该方法包括通过结构层形成牺牲材料释放通孔，通过经由释放通孔蚀刻牺牲材料的蚀刻以及经由材料扩散密封释放通孔来去除牺牲材料。

公开(公告)号：US20130221495A1

公开(公告)日：2013-08-29

申请号：US13721496

申请日：2012-12-20

Applicant: The Hong Kong University of Science and Technology

Inventor： Man WONG ,  Fan ZENG

IPC: H01L21/461 ,  H01L29/16

CPC classification number: H01L21/461 ,  B01J19/0093 ,  B01J2219/00783 ,  B01J2219/00822 ,  B01J2219/00828 ,  B01J2219/00837 ,  B01J2219/0086 ,  B01L3/502707 ,  B01L2300/0816 ,  B81B2201/058 ,  B81B2203/0338 ,  B81C1/00071 ,  B81C2201/0116 ,  B81C2201/0178 ,  H01L29/16

Abstract: Described herein is a microchannel that is formed beneath and parallel to a surface of a silicon substrate. Silicon migration technology is utilized to form a microchannel that is buried beneath the surface of the silicon substrate. Etching opens at least one end of the microchannel. Oxidization is utilized through the open end of the microchannel to facilitate a controlled diameter of the microchannel.

Abstract translation: 这里描述的是形成在硅衬底的表面下方并平行于其的表面的微通道。 利用硅迁移技术形成埋在硅衬底表面下方的微通道。 蚀刻打开微通道的至少一端。 通过微通道的开口端利用氧化，以促进微通道的受控直径。

公开(公告)号：US20050181529A1

公开(公告)日：2005-08-18

申请号：US11011888

申请日：2004-12-13

Applicant: Hubert Benzel ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

Inventor： Hubert Benzel ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

IPC: B81B3/00 ,  H01L21/00 ,  H01L29/24 ,  H01L33/00

CPC classification number: B81C1/00158 ,  B81B3/007 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0115 ,  B81C2201/0116 ,  B81C2201/0136

Abstract: A manufacturing method for a micromechanical semiconductor element includes providing on a semiconductor substrate a patterned stabilizing element having at least one opening. The opening is arranged such that it allows access to a first region in the semiconductor substrate, the first region having a first doping. Furthermore, a selective removal of at least a portion of the semiconductor material having the first doping out of the first region of the semiconductor substrate is provided. In addition, a membrane is produced above the first region using a first epitaxy layer applied on the stabilizing element. In a further method step, at least a portion of the first region is used to produce a cavity underneath the stabilizing element. In this manner, the present invention provides for the production of the patterned stabilizing element by means of a second epitaxy layer, which is applied on the semiconductor substrate.

Abstract translation: 微机电半导体元件的制造方法包括在半导体衬底上提供具有至少一个开口的图案化稳定元件。 开口被布置成使得其允许接近半导体衬底中的第一区域，第一区域具有第一掺杂。 此外，提供了选择性地去除半导体衬底的第一区域中具有第一掺杂的半导体材料的至少一部分。 此外，使用施加在稳定元件上的第一外延层，在第一区域上方产生膜。 在另一方法步骤中，第一区域的至少一部分用于在稳定元件下方产生空腔。 以这种方式，本发明提供了通过施加在半导体衬底上的第二外延层来生产图案化的稳定元件。

公开(公告)号：US20240182298A1

公开(公告)日：2024-06-06

申请号：US18525410

申请日：2023-11-30

Applicant: Robert Bosch GmbH

Inventor： Johannes Classen

IPC: B81C1/00

CPC classification number: B81C1/00619 ,  B81C2201/0116 ,  B81C2201/0132 ,  B81C2201/0198 ,  B81C2203/035 ,  B81C2203/0785

Abstract: A method producing a microelectromechanical component. A dielectric layer is structured on an upper side of a substrate forming a grating, and a blind hole is formed beneath the grating. A cover layer is arranged on the dielectric layer closing the blind hole. A layer sequence is arranged on the cover layer and above the blind hole. Functional structures are formed in the layer sequence and an access channel extending through the layer sequence to the blind hole is formed. A further substrate is connected to the substrate. The functional structures are enclosed in a cavity, connected to the blind hole, between the substrate and the further substrate. Another blind hole is formed on an underside of the substrate. The blind hole is opened in the region of the other blind hole. A cavity internal pressure is set, and the blind hole is closed.

公开(公告)号：US20180299337A1

公开(公告)日：2018-10-18

申请号：US15958461

申请日：2018-04-20

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Lorenzo BALDO ,  Sarah ZERBINI ,  Enri DUQI

IPC: G01L9/00 ,  B81C1/00 ,  B81B3/00 ,  B81B7/00

CPC classification number: G01L9/0052 ,  B81B3/0021 ,  B81B7/0006 ,  B81B2201/0264 ,  B81C1/00158 ,  B81C1/00182 ,  B81C2201/0116 ,  G01L9/0072

Abstract: A process for manufacturing a MEMS pressure sensor having a micromechanical structure envisages: providing a wafer having a substrate of semiconductor material and a top surface; forming a buried cavity entirely contained within the substrate and separated from the top surface by a membrane suspended above the buried cavity; forming a fluidic-communication access for fluidic communication of the membrane with an external environment, set at a pressure the value of which has to be determined; forming, suspended above the membrane, a plate made of polysilicon, separated from the membrane by an empty space; and forming electrical-contact elements for electrical connection of the membrane and of the plate, which are designed to form the plates of a sensing capacitor, the value of capacitance of which is indicative of the value of pressure to be detected. A corresponding MEMS pressure sensor having the micromechanical structure is moreover described.

公开(公告)号：US20090243003A1

公开(公告)日：2009-10-01

申请号：US12413346

申请日：2009-03-27

Applicant: Crocifisso Marco Antonio Renna ,  Alessandro Auditore ,  Alessio Romano ,  Sebastiano Ravesi

Inventor： Crocifisso Marco Antonio Renna ,  Alessandro Auditore ,  Alessio Romano ,  Sebastiano Ravesi

IPC: H01L29/66 ,  H01L21/28

CPC classification number: G01N27/128 ,  B81B2201/0214 ,  B81C1/00158 ,  B81C2201/0116 ,  H01L21/3247

Abstract: A method manufactures a gas sensor integrated on a semiconductor substrate. The method includes: realizing a first plurality of openings in the semiconductor substrate; realizing a crystalline silicon membrane suspended on the semiconductor substrate, forming an insulating cavity buried in the substrate; realizing a second plurality of openings in the semiconductor substrate, so as to totally suspend on the semiconductor substrate the crystalline silicon membrane; realizing, through a thermal oxidation process of the totally suspended crystalline silicon membrane, a suspended dielectric membrane; realizing, through selective photolithography, a heating element; realizing, through selective photolithography, electrodes and a pair of electric contacts; and selectively realizing, above the electrodes, a sensitive element by compacting layers of metallic oxide through a sintering process generated in the gas sensor by connecting the electrodes to a voltage generator.

Abstract translation: 一种制造集成在半导体衬底上的气体传感器的方法。 该方法包括：实现半导体衬底中的第一多个开口; 实现悬浮在半导体衬底上的结晶硅膜，形成埋在衬底中的绝缘腔; 在半导体衬底中实现第二多个开口，以便在半导体衬底上完全悬挂晶体硅膜; 通过完全悬浮的结晶硅膜的热氧化工艺实现悬浮介电膜; 通过选择性光刻实现加热元件; 通过选择性光刻实现电极和一对电触点; 并且通过在气体传感器中产生的烧结过程，通过将电极连接到电压发生器来压实金属氧化物层，从而在电极之上选择性地实现敏感元件。

公开(公告)号：US07494839B2

公开(公告)日：2009-02-24

申请号：US11011888

申请日：2004-12-13

Applicant: Hubert Benzel ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

Inventor： Hubert Benzel ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

IPC: H01L21/00

CPC classification number: B81C1/00158 ,  B81B3/007 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0115 ,  B81C2201/0116 ,  B81C2201/0136

Abstract: A manufacturing method for a micromechanical semiconductor element includes providing on a semiconductor substrate a patterned stabilizing element having at least one opening. The opening is arranged such that it allows access to a first region in the semiconductor substrate, the first region having a first doping. Furthermore, a selective removal of at least a portion of the semiconductor material having the first doping out of the first region of the semiconductor substrate is provided. In addition, a membrane is produced above the first region using a first epitaxy layer applied on the stabilizing element. In a further method step, at least a portion of the first region is used to produce a cavity underneath the stabilizing element. In this manner, the present invention provides for the production of the patterned stabilizing element by means of a second epitaxy layer, which is applied on the semiconductor substrate.

Abstract translation: 微机电半导体元件的制造方法包括在半导体衬底上提供具有至少一个开口的图案化稳定元件。 开口被布置成使得其允许接近半导体衬底中的第一区域，第一区域具有第一掺杂。 此外，提供了选择性地去除半导体衬底的第一区域中具有第一掺杂的半导体材料的至少一部分。 此外，使用施加在稳定元件上的第一外延层，在第一区域上方产生膜。 在另一方法步骤中，第一区域的至少一部分用于在稳定元件下方产生空腔。 以这种方式，本发明提供了通过施加在半导体衬底上的第二外延层来生产图案化的稳定元件。

公开(公告)号：US20040248349A1

公开(公告)日：2004-12-09

申请号：US10726005

申请日：2003-12-01

Applicant: STMicroelectronics S.r.l.

Inventor： Crocifisso Marco Antonio Renna ,  Luigi La Magna ,  Simona Lorenti ,  Salvatore Coffa

IPC: H01L021/336

CPC classification number: B81C1/00047 ,  B81B2201/0257 ,  B81C2201/0115 ,  B81C2201/0116 ,  H01L21/302 ,  H01L21/306 ,  H01L21/76243 ,  H01L21/764 ,  H01L29/0649 ,  H04R19/005

Abstract: A method for manufacturing a semiconductor substrate of a first concentration type is described, which comprises at least a buried insulating cavity, comprising the following steps: forming on the semiconductor substrate a plurality of trenches, forming a surface layer on the semiconductor substrate in order to close superficially the plurality of trenches forming in the meantime at least a buried cavity in correspondence with the surface-distal end of the trenches.

Abstract translation: 描述了一种用于制造第一浓缩型半导体衬底的方法，至少包括掩埋绝缘腔，包括以下步骤：在半导体衬底上形成多个沟槽，在半导体衬底上形成表面层，以便 在表面上紧密地闭合形成与沟槽的表面 - 远端相对应的至少一个掩埋腔的多个沟槽。

公开(公告)号：US20040152228A1

公开(公告)日：2004-08-05

申请号：US10472650

申请日：2004-03-26

Inventor： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

IPC: H01L021/00

CPC classification number: G01L9/0055 ,  B81B2203/033 ,  B81C1/00047 ,  B81C1/00246 ,  B81C2201/0116 ,  B81C2203/0742 ,  G01L9/0042 ,  G01L9/0045

Abstract: Proposed is a method for manufacturing micromechanical sensors and sensors manufactured by this method, where openings (2) are introduced into a semiconductor substrate (1). After the openings (2) are introduced into the semiconductor substrate (1), a subsequent temperature treatment is carried out, in which the openings (2) are converted into voids in the depth of the substrate (1).

Abstract translation: 提出了一种通过这种方法制造微机械传感器和传感器的方法，其中开口（2）被引入到半导体衬底（1）中。 在将开口（2）引入到半导体衬底（1）中之后，进行随后的温度处理，其中开口（2）在衬底（1）的深度处被转换为空隙。

公开(公告)号：US20020174686A1

公开(公告)日：2002-11-28

申请号：US09851231

申请日：2001-05-07

Applicant: The Regents of the University of California

Inventor： Peter Krulevitch ,  Julie K. Hamilton ,  Harold D. Ackler

IPC: C03C027/00

CPC classification number: B81C1/00103 ,  B01L3/5027 ,  B81B2201/058 ,  B81C1/00071 ,  B81C1/00357 ,  B81C2201/0116 ,  B81C2201/0169 ,  B81C2201/019 ,  C03B23/20 ,  C03B25/00 ,  C03C15/00 ,  Y02P40/57

Abstract: A process for micromachining capillaries was having circular cross-sections in glass substrates. Microchannels are isotropically etched into a flat glass substrate, resulting in a semi-circular half-channel (or a rectangle with rounded corners). A second flat glass substrate is then fusion bonded to the first substrate, producing sealed microchannels with rounded bottom corners and a flat top surface having sharp corners. The process is completed by annealing at a sufficiently high temperature (approximately 750 C.) to allow surface tension forces and diffusional effects to lower the over-all energy of the microchannels by transforming the cross-section to a circular shape. The process can be used to form microchannels with circular cross-sections by etching channels into a glass substrate, then anodically bonding to a silicon wafer and annealing. The process will work with other materials such as polymers.

Abstract translation: 用于微加工毛细管的方法在玻璃基底中具有圆形横截面。 微通道被各向同性地蚀刻成平坦的玻璃基板，产生半圆形的半通道（或具有圆角的矩形）。 然后将第二平板玻璃基板熔合到第一基板上，产生具有圆形底角的密封微通道和具有锐角的平坦顶表面。 该过程通过在足够高的温度（约750℃）下退火来完成，以通过将横截面变换为圆形形状来允许表面张力和扩散效应来降低微通道的总能量。 该方法可以用于通过将通道蚀刻到玻璃基板中，然后阳极结合到硅晶片和退火来形成具有圆形横截面的微通道。 该方法将与其他材料如聚合物一起使用。