利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

1016 条记录 (耗时 0.264 秒)

    Thin-film magnetic oscillation element
    12.
    发明授权
    Thin-film magnetic oscillation element 有权
    薄膜磁振动元件

    公开(公告)号：US09017831B2

    公开(公告)日：2015-04-28

    申请号：US13779048

    申请日：2013-02-27

    申请人： TDK Corporation

    发明人： Katsuyuki Nakada ,  Takahiro Suwa ,  Kuniyasu Ito ,  Yuji Kakinuma ,  Masato Takahashi

    IPC分类号： G11C11/16 ,  H01F1/00 ,  G01R33/09 ,  H01F10/32 ,  G11B5/39

    CPC分类号： H01F1/0036 ,  G01R33/091 ,  G01R33/093 ,  G11B5/3903 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3268 ,  H01F10/3286 ,  H01F10/3295 ,  Y10T428/1107 ,  Y10T428/1121

    摘要： A thin-film magnetic oscillation element includes a pinned magnetic layer, a free magnetic layer, a nonmagnetic spacer layer provided between the pinned magnetic layer and the free magnetic layer, and a pair of electrodes, in which the easy axis of magnetization of the pinned magnetic layer lies in an in-plane direction of the plane of the pinned magnetic layer, and the easy axis of magnetization of the free magnetic layer lies in a direction normal to the plane of the free magnetic layer. Preferably, the relationship between the saturation magnetization Ms and the magnetic anisotropy field Ha of the free magnetic layer satisfies 1.257 Ms

    摘要翻译： 薄膜磁振动元件包括钉扎磁性层，自由磁性层，设置在钉扎磁性层和自由磁性层之间的非磁性间隔层，以及一对电极，其中固定的易磁化轴 磁性层位于被钉扎的磁性层的平面的面内方向，自由磁性层的易磁化轴位于与自由磁性层的平面垂直的方向上。 优选地，自由磁性层的饱和磁化强度Ms和磁各向异性场Ha之间的关系满足1.257 Ms

    Thermally assisted magnetic writing device
    13.
    发明授权
    Thermally assisted magnetic writing device 有权
    热辅助磁写装置

    公开(公告)号：US08947916B2

    公开(公告)日：2015-02-03

    申请号：US13876390

    申请日：2011-09-29

    申请人： Bernard Dieny ,  Jerome Moritz ,  Ricardo Sousa

    发明人： Bernard Dieny ,  Jerome Moritz ,  Ricardo Sousa

    IPC分类号： G11C11/00 ,  G11C11/16 ,  H01F10/32 ,  H01L43/08

    CPC分类号： G11C11/1675 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  H01F10/3218 ,  H01F10/3268 ,  H01F10/3272 ,  H01F10/3286 ,  H01L43/08

    摘要： A thermally assisted magnetic writing device including a first magnetic layer known as the “reference layer,” a second magnetic layer known as the “storage layer” that presents a variable magnetization direction, a spacer situated between the reference layer and the storage layer and a first antiferromagnetic layer in contact with the storage layer, the first antiferromagnetic layer being able to trap the magnetization direction of the storage layer. The magnetic device also includes a stabilization layer made of a ferromagnetic material, the stabilization layer being in contact with the first antiferromagnetic layer.

    摘要翻译： 一种热辅助磁写入装置，包括被称为“参考层”的第一磁性层，被称为呈现可变磁化方向的“存储层”的第二磁性层，位于参考层和存储层之间的间隔件，以及 第一反铁磁层与存储层接触，第一反铁磁层能够捕获存储层的磁化方向。 磁性装置还包括由铁磁材料制成的稳定层，稳定层与第一反铁磁层接触。

    MEMORY CELL HAVING NONMAGNETIC FILAMENT CONTACT AND METHODS OF OPERATING AND FABRICATING THE SAME
    14.
    发明申请
    MEMORY CELL HAVING NONMAGNETIC FILAMENT CONTACT AND METHODS OF OPERATING AND FABRICATING THE SAME 有权
    具有非线性光纤接触的存储单元及其操作和制造方法

    公开(公告)号：US20140264675A1

    公开(公告)日：2014-09-18

    申请号：US14290477

    申请日：2014-05-29

    申请人： Micron Technology, Inc.

    发明人： Jun Liu ,  Gurtej Sandhu

    IPC分类号： H01L43/08

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/329 ,  H01F41/306 ,  H01F41/307 ,  H01L27/228 ,  Y10S977/70

    摘要： A magnetic cell structure including a nonmagnetic filament contact, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, an insulative layer between the free and pinned layers, and a nonmagnetic filament contact in the insulative layer which electrically connects the free and pinned layers. The nonmagnetic filament contact is formed from a nonmagnetic source layer, also between the free and pinned layers. The filament contact directs a programming current through the magnetic cell structure such that the cross sectional area of the programming current in the free layer is less than the cross section of the structure. The decrease in the cross sectional area of the programming current in the free layer enables a lower programming current to reach a critical switching current density in the free layer and switch the magnetization of the free layer, programming the magnetic cell.

    摘要翻译： 提供包括非磁性细丝接触的磁性单元结构以及制造该结构的方法。 磁性单元结构包括自由层，钉扎层，自由层和被钉扎层之间的绝缘层，以及绝缘层中的非磁性细丝接触，其电连接自由层和被钉扎层。 非磁性细丝接触由非磁性源层形成，也在自由层和被钉扎层之间。 灯丝接触引导编程电流通过磁性电池结构，使得自由层中编程电流的横截面面积小于结构的横截面。 自由层中编程电流的横截面积的减小使编程电流能够达到自由层中的关键开关电流密度并切换自由层的磁化，对磁性单元进行编程。

    MAGNETIC MEMORY DEVICES INCLUDING MAGNETIC LAYERS SEPARATED BY TUNNEL BARRIERS
    16.
    发明申请
    MAGNETIC MEMORY DEVICES INCLUDING MAGNETIC LAYERS SEPARATED BY TUNNEL BARRIERS 审中-公开
    包括由隧道障碍物分离的磁层的磁记忆装置

    公开(公告)号：US20130234269A1

    公开(公告)日：2013-09-12

    申请号：US13838598

    申请日：2013-03-15

    申请人： Sechung OH ,  Jangeun Lee ,  Jeahyoung Lee ,  Woojin Kim ,  Woo Chang Lim ,  Junho Jeong ,  Sukhun Choi

    发明人： Sechung OH ,  Jangeun Lee ,  Jeahyoung Lee ,  Woojin Kim ,  Woo Chang Lim ,  Junho Jeong ,  Sukhun Choi

    IPC分类号： H01L43/02

    CPC分类号： H01L43/02 ,  B82Y25/00 ,  G11C11/16 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3286 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetic memory device may include a first vertical magnetic layer, a non-magnetic layer on the first vertical magnetic layer, and a first junction magnetic layer on the non-magnetic layer, with the non-magnetic layer being between the first vertical magnetic layer and the first junction magnetic layer. A tunnel barrier may be on the first junction magnetic layer, with the first junction magnetic layer being between the non-magnetic layer and the tunnel barrier. A second junction magnetic layer may be on the tunnel barrier with the tunnel barrier being between the first and second junction magnetic layers, and a second vertical magnetic layer may be on the second junction magnetic layer with the second junction magnetic layer being between the tunnel barrier and the second vertical magnetic layer.

    摘要翻译： 磁存储器件可以包括第一垂直磁性层，第一垂直磁性层上的非磁性层和非磁性层上的第一结磁性层，其中非磁性层位于第一垂直磁性层之间 和第一结磁性层。 隧道势垒可以在第一结磁性层上，其中第一结磁性层位于非磁性层和隧道势垒之间。 第二结磁性层可以在隧道势垒上，其中隧道势垒在第一和第二结磁层之间，第二垂直磁性层可以在第二结磁性层上，第二结磁性层位于隧道势垒之间 和第二垂直磁性层。

    STRAM WITH COMPOSITE FREE MAGNETIC ELEMENT
    17.
    发明申请
    STRAM WITH COMPOSITE FREE MAGNETIC ELEMENT 失效
    具有无复合材料的磁性元件

    公开(公告)号：US20130229862A1

    公开(公告)日：2013-09-05

    申请号：US13862611

    申请日：2013-04-15

    申请人： SEGATE TECHNOLOGY LLC

    发明人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Haiwen Xi ,  Kaizhong Gao ,  Olle Heinonen ,  Wenzhong Zhu

    IPC分类号： G11C11/16

    CPC分类号： G11C11/1675 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08

    摘要： Spin-transfer torque memory includes a composite free magnetic element, a reference magnetic element having a magnetization orientation that is pinned in a reference direction, and an electrically insulating and non-magnetic tunneling barrier layer separating the composite free magnetic element from the magnetic reference element. The free magnetic element includes a hard magnetic layer exchanged coupled to a soft magnetic layer. The composite free magnetic element has a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit.

    摘要翻译： 自旋转矩存储器包括复合自由磁性元件，具有沿参考方向固定的磁化取向的参考磁性元件以及将复合自由磁性元件与磁性参考元件分离的电绝缘和非磁性隧道势垒层 。 自由磁性元件包括与软磁性层交换的硬磁性层。 复合自由磁性元件具有当写入电流通过自旋转移转矩存储单元时由于自旋转矩传递而改变方向的磁化取向。

    Magnetic stack having reference layers with orthogonal magnetization orientation directions
    18.
    发明授权
    Magnetic stack having reference layers with orthogonal magnetization orientation directions 有权
    具有正交磁化取向方向的参考层的磁性堆叠

    公开(公告)号：US08519498B2

    公开(公告)日：2013-08-27

    申请号：US13613002

    申请日：2012-09-13

    申请人： Yuankai Zheng ,  Zheng Gao ,  Wenzhong Zhu ,  Wonjoon Jung ,  Haiwen Xi

    发明人： Yuankai Zheng ,  Zheng Gao ,  Wenzhong Zhu ,  Wonjoon Jung ,  Haiwen Xi

    IPC分类号： H01L29/82 ,  G11C11/02

    CPC分类号： H01F10/329 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3272 ,  H01L43/08

    摘要： A magnetic cell includes a ferromagnetic free layer having a free magnetization orientation direction and a first ferromagnetic pinned reference layer having a first reference magnetization orientation direction that is parallel or anti-parallel to the free magnetization orientation direction. A first oxide barrier layer is between the ferromagnetic free layer and the first ferromagnetic pinned reference layer. The magnetic cell further includes a second ferromagnetic pinned reference layer having a second reference magnetization orientation direction that is orthogonal to the first reference magnetization orientation direction. The ferromagnetic free layer is between the first ferromagnetic pinned reference layer and the second ferromagnetic pinned reference layer.

    摘要翻译： 磁性电池包括具有自由磁化取向方向的铁磁自由层和具有与自由磁化取向方向平行或反平行的第一参考磁化取向方向的第一铁磁性固定参考层。 第一氧化物阻挡层位于铁磁性自由层和第一铁磁性固定基准层之间。 磁性单元还包括具有与第一参考磁化取向方向正交的第二参考磁化定向方向的第二铁磁性固定参考层。 铁磁自由层在第一铁磁性钉扎参考层和第二铁磁性固定基准层之间。

    MAGNETIC ELEMENT HAVING PERPENDICULAR ANISOTROPY WITH ENHANCED EFFICIENCY
    19.
    发明申请
    MAGNETIC ELEMENT HAVING PERPENDICULAR ANISOTROPY WITH ENHANCED EFFICIENCY 有权
    具有增强效率的均匀性的磁性元件

    公开(公告)号：US20130177781A1

    公开(公告)日：2013-07-11

    申请号：US13779734

    申请日：2013-02-27

    申请人： Roman Chepulskyy ,  Dmytro Apalkov

    发明人： Roman Chepulskyy ,  Dmytro Apalkov

    IPC分类号： H01F1/01 ,  H01F10/32

    CPC分类号： H01F1/01 ,  B82Y25/00 ,  G01R33/091 ,  G01R33/098 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01F10/3286 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114 ,  Y10T428/115

    摘要： A material composition for forming a free layer in a STT structure (such as a single or dual MTJ structure) can include CoxFeyMz, where M is a non-magnetic material that assists in forming a good crystalline orientation and matching between the free layer and an MgO interface. The material M preferably either does not segregate to the MgO interface or, if it does segregate to the MgO interface, it does not significantly reduce the PMA of the free layer. The free layer can further include a connecting layer, where M is attracted to the insertion layer during annealing. The free layer can include a graded composition of CoxFeyMz, where z changes within the free layer.

    摘要翻译： 用于在STT结构（例如单个或双重MTJ结构）中形成自由层的材料组合物可以包括CoxFeyMz，其中M是有助于形成良好的晶体取向的非磁性材料，并且自由层与 MgO界面。 材料M优选不分离到MgO界面，或者如果它分离到MgO界面，则其不会显着降低自由层的PMA。 自由层还可包括连接层，其中M在退火期间被吸引到插入层。 自由层可以包括CoxFeyMz的分级组成，其中z在自由层内变化。