公开(公告)号：US20030137236A1

公开(公告)日：2003-07-24

申请号：US09555559

申请日：2000-05-31

Inventor： RICHARD ALLAN TUCK ,  HUGH EDWARD BISHOP

IPC: H01J001/62

CPC classification number: H01J1/304 ,  H01J2201/30403

Abstract: A field electron emission material is formed by coating a substrate (221, 230) having an electrically conductive surface with a plurality of electrically conductive particles (223, 231). Each particle has a layer of electrically insulating material (222, 232) disposed either in a first location between the disposed either in a first location between the conductive surface of the substrate (221) and the particle (223), or in a second location between the particle (231) and the environment (237) in which the field electron emission material is disposed, but not in both of such first and second locations, so that at least some of the particles (223, 231) form electron emission sites at such first or second locations. A number of field emission devices are disclosed, utilising such electron emission material.

Abstract translation: 通过用具有多个导电颗粒（223,231）的具有导电表面的衬底（221,230）涂覆来形成场致电子发射材料。 每个颗粒具有一层电绝缘材料（222,232），其设置在位于基板（221）的导电表面和颗粒（223）之间的第一位置之间的第一位置，或者位于第二位置 在颗粒（231）和其中设置场致电子发射材料的环境（237）之间但不在这两个第一和第二位置之间，使得至少一些颗粒（223,231）形成电子发射位点 在这样的第一或第二位置。 公开了利用这种电子发射材料的多个场致发射器件。

公开(公告)号：US20020096684A1

公开(公告)日：2002-07-25

申请号：US10092887

申请日：2002-03-07

Inventor： George R. Brandes ,  Chris S. Christos ,  Xueping Xu

IPC: H01L031/0312

CPC classification number: H01L28/20 ,  H01J1/3042 ,  H01J2201/30403 ,  H01J2201/319 ,  H01J2329/00 ,  H01L31/03765 ,  Y02E10/548

Abstract: Amorphous silicon carbide thin film structures, including: protective coatings for windows in infrared process stream monitoring systems and sensor domes, heated windows, electromagnetic interference shielding members and integrated micromachined sensors; high-temperature sensors and circuits; and diffusion barrier layers in VLSI circuits. The amorphous silicon carbide thin film structures are readily formed, e.g., by sputtering at low temperatures.

Abstract translation: 无定形碳化硅薄膜结构，包括：红外线工艺流监测系统和传感器圆顶中的窗户保护涂层，加热窗，电磁干扰屏蔽构件和集成微机械传感器; 高温传感器和电路; 和VLSI电路中的扩散阻挡层。 非晶碳化硅薄膜结构容易形成，例如通过在低温下溅射。

公开(公告)号：US06417016B1

公开(公告)日：2002-07-09

申请号：US09261477

申请日：1999-02-26

Applicant: Terry L. Gilton ,  Paul A. Morgan

Inventor： Terry L. Gilton ,  Paul A. Morgan

IPC: H01J902

CPC classification number: H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2329/00

Abstract: Improved methods and structures are provided for an array of vertical geometries which may be used as emitter tips, as a self aligned gate structure surrounding field emitter tips, or as part of a flat panel display. The present invention offers controlled size in emitter tip formation under a more streamlined process. The present invention further provides a more efficient method to control the gate to emitter tip proximity in field emission devices. The novel method of the present invention includes implanting a dopant in a patterned manner into the silicon substrate and anodizing the silicon substrate in a controlled manner causing a more heavily doped region in the silicon substrate to form a porous silicon region. Controlling the anodization of the silicon substrate further regulates and defines the shape to less heavily doped regions in the silicon substrate which form vertical geometries that can be used as emitter tips. One method of the present invention provides a self-aligned gate structure around emitter tips. Another method includes forming a field emission device. The present invention includes a novel field emitter array, a self aligned gate structure, a field emission device, and a display device all formed according to the methods provided in this application.

Abstract translation: 提供了用于垂直几何阵列的改进的方法和结构，其可以用作发射器尖端，作为围绕场发射器尖端的自对准栅极结构，或者作为平板显示器的一部分。 本发明在更简化的过程中提供了在发射极尖端形成中的受控尺寸。 本发明还提供了一种更有效的方法来控制场致发射器件中的栅极与发射极尖端的接近。 本发明的新颖方法包括以图案化的方式将掺杂剂注入到硅衬底中并以受控的方式对硅衬底进行阳极氧化，从而在硅衬底中形成更重掺杂的区域以形成多孔硅区域。 控制硅衬底的阳极化进一步调节并限定了形成到硅衬底中的较低重掺杂区域的形状，其形成可用作发射极尖端的垂直几何形状。 本发明的一种方法提供围绕发射器尖端的自对准栅极结构。 另一种方法包括形成场发射装置。 本发明包括根据本申请中提供的方法形成的新型场发射器阵列，自对准栅极结构，场发射器件和显示器件。

公开(公告)号：US06342755B1

公开(公告)日：2002-01-29

申请号：US09373028

申请日：1999-08-11

Applicant: Benjamin E. Russ ,  Ichiro Saito ,  Jack Barger

Inventor： Benjamin E. Russ ,  Ichiro Saito ,  Jack Barger

IPC: H01J102

CPC classification number: H01J1/304 ,  H01J9/025 ,  H01J2201/30403

Abstract: Electrophoretic deposition provides an efficient process for manufacturing a field emission cathode. Particles of an electron emitting material mixed with particles of an insulating material are deposited by electrophoretic deposition on a conducting layer overlying an insulating layer to produce the cathode. By controlling the composition of the deposition bath and by mixing insulating particles with emitting particles, an electrophoretic deposition process can be used to efficiently produce field emission cathodes that provide spatially and temporally stable field emission. The deposition bath for the field emission cathode includes an alcohol, a charging salt, water, and a dispersant. The field emission cathodes can be used as an electron source in a field emission display device.

Abstract translation: 电泳沉积提供了制造场致发射阴极的有效方法。 通过电泳沉积在覆盖绝缘层的导电层上沉积与绝缘材料的颗粒混合的电子发射材料的颗粒，以产生阴极。 通过控制沉积浴的组成并通过将绝缘颗粒与发射颗粒混合，可以使用电泳沉积工艺来有效地产生提供空间和时间上稳定的场发射的场致发射阴极。 用于场致发射阴极的沉积浴包括醇，充电盐，水和分散剂。 场发射阴极可以用作场致发射显示装置中的电子源。

公开(公告)号：US20010044251A1

公开(公告)日：2001-11-22

申请号：US09860397

申请日：2001-05-17

Inventor： Young-Rae Cho ,  Jin-Ho Lee ,  Yoon-Ho Song ,  Seung-Youl Kang ,  Moon-Youn Jung ,  Kyoung-Ik Cho ,  Do-Hyung Kim ,  Chi-Sun Hwang

IPC: H01J009/02

CPC classification number: H01J9/025 ,  H01J2201/30403

Abstract: A cathode structure for a field emission device, which is an essential component of a field emission device, and a method of fabricating the same are provided. An emitter material for electron emission constituting cathodes is formed in a particulate emitter, the particulate emitter is formed of a material from which electrons can be easily emitted at a low electric field. A significant advantage of the present invention over a conventional art is that the present invention patterns an emitter material to a cathode electrode using a photolithography process or a lift-off process. In the lift-off process, the emitting compound is patterned using a sacrifice layer. Also, in another embodiment of the present invention, there is disclosed a method of easily fabricating cathodes for a triode-type field emission device using a particulate emitter material at a low process temperature. Therefore, the present invention provides a method of fabricating a cathode for a triode-type field emission device using particulate emitter that is synthesized at a high temperature of 600null C. over, as the emitter material.

Abstract translation: 提供了场致发射器件的阴极结构及其制造方法。 用于形成阴极的电子发射用发射体材料形成在颗粒状发射体中，微粒发射体由电子能够以低电场容易地发射的材料形成。 本发明相对于传统技术的显着优点是本发明使用光刻工艺或剥离工艺将发射极材料图案化成阴极电极。 在剥离过程中，使用牺牲层对发光化合物进行图案化。 此外，在本发明的另一个实施例中，公开了一种在低工艺温度下使用颗粒发射体材料容易地制造用于三极管型场致发射器件的阴极的方法。 因此，本发明提供一种使用在600℃的高温下合成的粒子发射体作为发射极材料的三极管型场发射器件的阴极的制造方法。

公开(公告)号：US06284556B1

公开(公告)日：2001-09-04

申请号：US09308271

申请日：1999-07-08

Applicant: Wang Nang Wang ,  Neil Anthony Fox

Inventor： Wang Nang Wang ,  Neil Anthony Fox

IPC: H01L2100

CPC classification number: C23C16/27 ,  B24D18/00 ,  B82Y10/00 ,  C01B32/25 ,  C09K3/1409 ,  C23C16/278 ,  C23C16/44 ,  H01J1/304 ,  H01J9/025 ,  H01J31/123 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/3165

Abstract: A diamond grit surface is formed on a substrate (1) having a metal surface (2), such as nickel, by applying a paste (4) of low-grade diamond grit in a binder to the surface. After driving off the binder, the diamond coated surface is placed in a reactor chamber (10) having a microwave plasma reactor (11) and connected to a hydrogen gas pump (12). The substrate (1) is heated in the hydrogen atmosphere at a reduced pressure. The metal surface (2) acts as a catalyst in the presence of the hydrogen plasma to cause regrowth of the diamond (6), giving an improved size, shape and adhesion. The method may be used to make diamond surfaces in electron emitter devices, circuit boards or abrasive devices.

Abstract translation: 在具有金属表面（2）如镍的基板（1）上，通过将粘合剂中的低等级金刚石砂粒的浆料（4）施加到表面上，形成金刚石砂粒表面。 在驱除粘合剂之后，将金刚石涂覆的表面放置在具有微波等离子体反应器（11）并连接到氢气泵（12）的反应器室（10）中。 基板（1）在氢气氛中减压加热。 金属表面（2）在氢等离子体的存在下起催化剂的作用，引起金刚石（6）的再生长，从而改善了尺寸，形状和粘附性。 该方法可用于在电子发射器件，电路板或研磨器件中制造金刚石表面。

公开(公告)号：US6080325A

公开(公告)日：2000-06-27

申请号：US24877

申请日：1998-02-17

Applicant: David A. Cathey ,  Kevin Tjaden

Inventor： David A. Cathey ,  Kevin Tjaden

IPC: H01J9/02 ,  H01J9/00

CPC classification number: H01J9/025 ,  H01J2201/30403

Abstract: A method for fabricating sharp asperities. A substrate is provided which has a mask layer disposed thereon, and a layer of micro-spheres is disposed superjacent the mask layer. The micro-spheres are for patterning the mask layer. Portions of the mask layer are selectively removed, thereby forming circular masks. The substrate is isotropically etched, thereby creating sharp asperities.

Abstract translation: 一种制造尖锐凹凸的方法。 提供了具有设置在其上的掩模层的基板，并且一层微球设置在掩模层的上方。 微球用于图案化掩模层。 选择性地去除掩模层的一部分，从而形成圆形掩模。 基板被各向同性地蚀刻，从而产生尖锐的凹凸。

公开(公告)号：US6057172A

公开(公告)日：2000-05-02

申请号：US157946

申请日：1998-09-22

Applicant: Yoshinori Tomihari

Inventor： Yoshinori Tomihari

IPC: H01J1/304 ,  H01J9/02 ,  H01L21/46 ,  H01L21/00

CPC classification number: H01J9/025 ,  H01J2201/30403

Abstract: In a field-emission cathode, a silicon substrate is heated to cause oxygen present therein to form silicon oxide cores. The silicon oxide cores are used as a mask for forming emitters. Because the cores each has a diameter as small as about 0.1 .mu.m, the emitters can be density arranged. A method of producing such a field-emission cathode is also disclosed.

Abstract translation: 在场发射阴极中，加热硅衬底以引起存在于其中的氧以形成氧化硅芯。 氧化硅芯用作形成发射体的掩模。 因为核心的直径小至约0.1μm，所以发射器可以是密度排列的。 还公开了一种制造这种场致发射阴极的方法。

公开(公告)号：US6028391A

公开(公告)日：2000-02-22

申请号：US953407

申请日：1997-10-17

Applicant: Hideo Makishima

Inventor： Hideo Makishima

IPC: H01J1/304 ,  H01J1/30 ,  H01J3/02 ,  H01J29/04 ,  H01J31/12 ,  H01J1/02

CPC classification number: H01J3/022 ,  H01J31/127 ,  H01J2201/30403 ,  H01J2201/30426

Abstract: There is provided a field emission thin film cold cathode including a substrate, an electron-emission layer formed on the substrate and having a spherical surface or a curved surface approximated to a spherical surface recessed into the substrate, a first electrode disposed about the electron-emission layer and having a greater height from the substrate than the electron-emission layer, an electrically insulating layer formed on the first electrode, and a second electrode formed on the electrically insulating layer. The electron-emission layer may be made of monocrystalline diamond, polycrystalline diamond or amorphous diamond. The above-mentioned field emission thin film cold cathode provides an electron source which makes it no longer necessary to fabricate a micro-structured device, can be fabricated without a lithography apparatus having a high accuracy, and has a small current modulating voltage.

Abstract translation: 提供一种场致发射薄膜冷阴极，其包括基板，形成在基板上的电子发射层，具有近似于凹入基板的球面的球面或曲面;第一电极， 并且具有比所述电子发射层更高的与所述衬底的高度，形成在所述第一电极上的电绝缘层和形成在所述电绝缘层上的第二电极。 电子发射层可以由单晶金刚石，多晶金刚石或非晶金刚石制成。 上述场发射薄膜冷阴极提供了不再需要制造微结构器件的电子源，可以在没有高精度的光刻设备的情况下制造，并且具有小的电流调制电压。

公开(公告)号：US5977697A

公开(公告)日：1999-11-02

申请号：US6347

申请日：1998-01-13

Applicant: Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

Inventor： Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

IPC: H01J31/12 ,  H01J1/304 ,  H01J9/02 ,  H01J23/06 ,  H01J29/04 ,  H01J1/30

CPC classification number: H01J23/06 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J61/0677 ,  H01J61/0737

Abstract: Improved diamond particle emitters, useful for flat panel displays, are fabricated by suspending nanometer-sized ultra-fine particles in a solution, applying the suspension as a coating onto a conducting substrate such as n-type Si or metal, subjecting the coated substrate to a plasma of hydrogen, and applying a thin, conformal diamond overcoating layer onto the particles. The resulting emitters show excellent emission properties, such as extremely low turn-on voltage, good uniformity and high current densities. In particular, the electron emitters are capable of producing electron emission current densities of at least 0.1 mA/,mm.sup.2 at extremely low vacuum electric fields of 0.2-3.0 V/.mu.m V/.mu.m. These field values are about an order of magnitude lower than exhibited by the best defective CVD diamond and almost two orders of magnitude lower than p-type semiconducting diamond. It is further found that the emission characteristics remain the same even after the plasma treated diamond surface is exposed to air for several months.

Abstract translation: 用于平板显示器的改进的金刚石颗粒发射器通过将纳米尺寸的超细颗粒悬浮在溶液中来制造，将悬浮液作为涂层施涂到诸如n型Si或金属的导电基材上，使经涂覆的基材 氢的等离子体，并将薄的保形金刚石外涂层施加到颗粒上。 所得到的发射体显示出优异的发射特性，例如极低的导通电压，良好的均匀性和高的电流密度。 特别地，电子发射体在0.2-3.0V / m V /μm的极低真空电场下能够产生至少0.1mA / mm2的电子发射电流密度。 这些场值比由最好的有缺陷的CVD金刚石显示的低一个数量级，比p型半导体金刚石低两个数量级。 进一步发现即使在等离子体处理的金刚石表面暴露于空气几个月之后，发射特性也保持不变。