公开(公告)号：US12198929B2

公开(公告)日：2025-01-14

申请号：US18387673

申请日：2023-11-07

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Hiroshi Ashihara ,  Toshiyuki Kikuchi

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/448 ,  C23C16/46 ,  C23C16/50 ,  H01L21/67

Abstract: A method of processing a substrate includes: (a) providing a substrate; (b) supplying a processing gas comprising H2O-containing radicals to the substrate; (c) supplying a gas including at least one element of Si, Ti, Mo, Al, W, Hf or Zr and a halogen element to the substrate; (d) supplying a gas including one or both of an oxygen element and a nitrogen element to the substrate after (c); and (e) repeating (c) and (d).

公开(公告)号：US12196109B2

公开(公告)日：2025-01-14

申请号：US18370648

申请日：2023-09-20

Applicant: RTX Corporation

Inventor： Brian T. Hazel ,  Elisa M. Zaleski ,  Kaylan M. Wessels

IPC: B32B15/04 ,  B32B18/00 ,  C23C4/11 ,  C23C4/134 ,  C23C4/18 ,  C23C14/06 ,  C23C14/08 ,  C23C14/22 ,  C23C14/28 ,  C23C14/30 ,  C23C14/34 ,  C23C16/40 ,  C23C16/455 ,  C23C28/00 ,  C23C28/04 ,  C23C30/00 ,  F01D5/28 ,  F01D25/00 ,  F01D25/08

Abstract: A calcium-magnesium-alumino-silicate (CMAS)-reactive thermal barrier coating includes a ceramic coating and a CMAS-reactive overlay coating, wherein the CMAS-reactive overlay coating conforms to a surface of the ceramic coating and comprises a compound that forms a stable high melting point crystalline precipitate when reacted with molten CMAS at a rate that is competitive with CMAS infiltration kinetics into the thermal barrier coating. The ceramic coating phase is stable with the CMAS-reactive overlay coating.

公开(公告)号：US12195345B2

公开(公告)日：2025-01-14

申请号：US17267767

申请日：2019-08-26

Applicant: OSAKA TITANIUM TECHNOLOGIES CO.,LTD..

Inventor： Kohki Takeshita ,  Yusuke Kashitani ,  Takehisa Fujita ,  Shingo Kizaki

IPC: C01B33/18 ,  C23C16/01 ,  C23C16/40 ,  C23C16/56 ,  H01M4/02 ,  H01M4/48

Abstract: [Problem to be solved] To produce an SiO powder having a rounded spherical particulate shape and a small particle diameter; and further having a low degree of impurity contamination, efficiently and economically.
[Solution] A mixture of Si and SiO2 as an SiO gas generation raw material 9 is loaded into a crucible 2. The mixture in the crucible 2 is heated under a reduced pressure so as to generate SiO gas. The generated SiO gas is accumulated on a deposition base 5 rotating on the crucible 2. When SiO deposit 10 accumulated on the deposition base 5 is scraped off with a blade 7, a tip of the blade 7 is separated from a surface of the deposition base 5, and in a state in which a portion of the SiO deposit 10 accumulated on the deposition base 5 is left on the deposition base 5, the remaining SiO deposit 10 is scraped off by the blade 7 and collected as an SiO powder 11.

公开(公告)号：US12191120B2

公开(公告)日：2025-01-07

申请号：US17691384

申请日：2022-03-10

Applicant: Applied Materials, Inc.

Inventor： Amir H. Tavakoli ,  Tony S. Kaushal ,  Peter Reimer ,  David Jorgensen

IPC: H01J37/00 ,  C04B35/10 ,  C04B35/12 ,  C04B35/14 ,  C04B35/622 ,  C23C16/40 ,  C23C16/455 ,  H01J37/32 ,  H01L21/67

Abstract: Exemplary methods of coating a metal-containing component are described. The methods are developed to increase corrosion resistance and improve coating adhesion to a metal substrate. The methods include forming a bonding layer on a metal substrate, where the bonding layer includes an oxide of a metal in the metal substrate. The coating methods further include depositing a stress buffer layer on the bonding layer, where the stress buffer layer is characterized by a stress buffer layer coefficient of thermal expansion (CTE) that is less than a metal substrate CTE and a bonding layer CTE. The coating methods also include depositing an environmental barrier layer on the stress buffer layer, where a ratio of the metal substrate CTE to an environmental barrier layer CTE is greater than or about 20:1, and where the environmental barrier layer includes silicon oxide. The metal-containing components may be used in fabrication equipment for electronic devices.

公开(公告)号：US12183589B2

公开(公告)日：2024-12-31

申请号：US17302847

申请日：2021-05-13

Applicant: Lam Research Corporation

Inventor： Jengyi Yu ,  Samantha S. H. Tan ,  Seongjun Heo ,  Boris Volosskiy ,  Sivananda Krishnan Kanakasabapathy ,  Richard Wise ,  Yang Pan ,  Hui-Jung Wu

IPC: H01L21/3213 ,  C04B41/53 ,  C04B41/91 ,  C23C16/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L21/465 ,  H01L21/467 ,  H01L21/67

Abstract: Tin oxide films are used as mandrels in semiconductor device manufacturing. In one implementation the process starts by patterning a tin oxide layer using at least one of a hydrogen-based etch chemistry and a chlorine-based etch chemistry, and using patterned photoresist as a mask, thereby providing a substrate having a plurality of protruding tin oxide features (mandrels). Next, a conformal layer of spacer material is formed both on the horizontal surfaces and on the sidewalls of the mandrels. The spacer material is then removed from the horizontal surfaces exposing the tin oxide material of the mandrels, without fully removing the spacer material residing at the sidewalls of the mandrels. Next, mandrels are selectively removed (e.g., using hydrogen-based etch chemistry), while leaving the spacer material that resided at the sidewalls of the mandrels. The resulting spacers can be used for patterning underlying layers on the substrate.

公开(公告)号：US12180585B2

公开(公告)日：2024-12-31

申请号：US17766467

申请日：2020-07-15

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Hiroshi Hashigami

IPC: C23C16/44 ,  C01G15/00 ,  C23C16/40 ,  C23C16/448 ,  C30B25/14 ,  C30B29/16

Abstract: A method for producing a gallium precursor, including, a step of preparing a solvent comprising an aqueous solution containing an acid and/or an alkali, a step of immersing gallium in the solvent, a step of making the gallium immersed in the solvent fine, and a step of dissolving the fined gallium. This provides a method for producing a gallium precursor with high quality and highly productive.

公开(公告)号：US20240429043A1

公开(公告)日：2024-12-26

申请号：US18504712

申请日：2023-11-08

Applicant: Samsung Electronics Co., Ltd. ,  AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Jeonggyu SONG ,  Ilkwon OH ,  Beomseok KIM ,  Jooho LEE ,  Wonsik CHOI ,  Byungjun WON ,  Minjeong RHEE

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455

Abstract: Provided is a method of forming an insulating film on a substrate by using atomic layer deposition (ALD). The method of forming an insulating film on a substrate by using ALD includes transferring a deposition-hindering material to the substrate, and depositing a first material layer by transferring a first precursor to the deposition-hindering material, wherein the deposition-hindering material includes an organic ligand, and the first precursor includes an alkoxide ligand.

公开(公告)号：US20240425536A1

公开(公告)日：2024-12-26

申请号：US18209217

申请日：2023-06-13

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Mark J. Saly ,  David Thompson

IPC: C07F11/00 ,  C23C16/40 ,  H01L21/02 ,  H01L21/3105

Abstract: Exemplary methods of semiconductor processing, such as methods of depositing a molybdenum-containing material on a substrate, may include providing a molybdenum-containing precursor to a processing region of a semiconductor processing chamber in which the substrate is located. The molybdenum-containing precursor may include a molybdenum complex according to Compound I: R may be methyl or ethyl, R′ may be methyl or ethyl, R″ may be methyl, ethyl, or propyl, and n may be equal to 1 or 2. Contacting the substrate with the molybdenum-containing precursor may deposit the molybdenum-containing material on the substrate.

公开(公告)号：US20240424791A1

公开(公告)日：2024-12-26

申请号：US18212607

申请日：2023-06-21

Applicant: FUJIFILM DIMATIX, INC.

Inventor： Shane Boyd ,  Sean Cahill ,  Kenichiro Tamaki ,  Hiroshi Komatsu ,  Eric Sanjuan

IPC: B41J2/16 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56

Abstract: An inkjet printer printhead, member thereof, or other component has an internal cavity that has a protective coating. Further surfaces of the component may have the protective coating. To make the protective coating, a target thickness for a film of HfO2 (hafnia) is selected, that will avoid formation of pinholes, thin spots and nodule growth. Using atomic layer deposition (ALD), with the processing adjusted for the target thickness, the film of HfO2 is deposited as a conformal layer on the component, including on a surface of the internal cavity, to form a coated component. A non-wetting coating can be included over the film of HfO2.

公开(公告)号：US12177972B2

公开(公告)日：2024-12-24

申请号：US18289769

申请日：2022-08-23

Applicant: NOF CORPORATION

Inventor： Toshinobu Fujimura ,  Katsumi Nakasato ,  Muneaki Iizuka

IPC: B32B3/00 ,  C23C16/40 ,  C23C16/448 ,  H01L21/48 ,  H01L23/373 ,  H05K1/02 ,  H05K1/05 ,  H05K3/44

Abstract: According to the present invention, a heat-dissipating circuit board is formed by providing a metal material adjacent to one surface of an insulating layer and providing a conductive metal layer to the other surface of the insulating layer. The metal material is a sheet of copper or a copper alloy or aluminum or an aluminum alloy and is 0.2-20 mm thick. The insulating layer is a metal oxide layer that has the composition AlxOyTz, is 0.2-30 μm thick, has a volume resistivity of at least 1000 GΩ·cm, and has a porosity of no more than 10%. The heat-dissipating circuit board has excellent heat-dissipation properties and insulation properties.