Cascaded filter employing an AOTF and narrowband birefringent filters
    11.
    发明授权
    Cascaded filter employing an AOTF and narrowband birefringent filters 有权
    采用AOTF和窄带双折射滤波器的级联滤波器

    公开(公告)号:US06624889B1

    公开(公告)日:2003-09-23

    申请号:US10135256

    申请日:2002-04-29

    Applicant: Shifang Li

    Inventor: Shifang Li

    CPC classification number: G01J3/1256 G01J3/447 H04J14/02 H04J14/06

    Abstract: An optical channel monitor (OCM) or filter for analyzing an incident light carrying a number of narrow band signal channels such as WDM or DWDM channels. The OCM or filter use an acousto-optic tunable filter to receive and refract from an incident light a refracted light such that the refracted light contains a test channel with a center frequency &ngr;0. A first birefringent element is provided for filtering from the refracted light a first polarized light and a second polarized light orthogonal to the first polarized light. The transmission curves are engineered such that the transmissions of the first and second polarized light are substantially equal at the center frequency &ngr;0 of the test channel. The OCM or filter has a second birefringent element for filtering from the first polarized light a first polarized portion and a second polarized portion. The transmission curves of the second birefringent element are set such that the transmissions of the first and second polarized portions are substantially equal at a first offset &dgr;1&ngr; from the center frequency &ngr;0.

    Abstract translation: 用于分析携带许多窄带信号通道(如WDM或DWDM通道)的入射光的光通道监视器(OCM)或滤波器。 OCM或滤波器使用声光可调谐滤波器从入射光接收和折射折射光,使得折射光包含具有中心频率nu0的测试通道。 提供了第一双折射元件,用于从折射光中滤出与第一偏振光正交的第一偏振光和第二偏振光。 传输曲线被设计成使得第一和第二偏振光的传输在测试通道的中心频率nu0处基本相等。 OCM或滤波器具有用于从第一偏振光第一偏振部分和第二偏振部分滤波的第二双折射元件。 第二双折射元件的透射曲线被设定为使得第一和第二偏振部分的透射在与中心频率nu0相距的第一偏移量Δ1nu处基本相等。

    Imaging apparatus and method
    12.
    发明授权
    Imaging apparatus and method 有权
    成像设备及方法

    公开(公告)号:US06594011B1

    公开(公告)日:2003-07-15

    申请号:US09614503

    申请日:2000-07-11

    Inventor: Lothar U. Kempen

    CPC classification number: G01N21/21 G01N21/253 G01N21/552 Y10S436/805

    Abstract: Imaging apparatus and method which uses change of polarization state of a light beam passed through a total internal reflection structure by a single reflection at a TIR surface in which a specimen is placed in the evanescent field associated with the total internal reflection of the light beam, the specimen being the subject of biological, chemical or genetic investigation.

    Abstract translation: 使用在TIR表面处的单一反射通过全内反射结构的光束的偏振状态的变化的成像装置和方法,其中样本被放置在与光束的全内反射相关联的消逝场中, 该标本是生物,化学或遗传调查的对象。

    Small spot ellipsometer
    13.
    发明授权

    公开(公告)号:US06515744B2

    公开(公告)日:2003-02-04

    申请号:US09779761

    申请日:2001-02-08

    Applicant: Lanhua Wei

    Inventor: Lanhua Wei

    CPC classification number: G01J4/00

    Abstract: An ellipsometer capable of generating a small beam spot is disclosed. The ellipsometer includes a light source for generating a narrow bandwidth probe beam. An analyzer is provided for determining the change in polarization state of the probe beam after interaction with the sample. A lens is provided having a numerical aperture and focal length sufficient to focus the beam to a diameter of less than 20 microns on the sample surface. The lens is formed from a graded index glass wherein the index of refraction varies along its optical axis. The lens is held in a relatively stress free mount to reduce stress birefringence created in the lens due to changes in ambient temperature. The ellipsometer is capable of measuring features on semiconductors having a dimensions as small as 50×50 microns.

    Electromagnetic wave analyzer
    14.
    发明授权

    公开(公告)号:US06504612B2

    公开(公告)日:2003-01-07

    申请号:US09850772

    申请日:2001-05-08

    Inventor: Rick P. Trebino

    CPC classification number: G01J11/00

    Abstract: An electromagnetic wave analyzer determines intensity and phase characteristics of an electromagnetic wave such as an ultrashort laser pulse. The analyzer passes the electromagnetic wave through a Fresnel biprism that produces a probe pulse and a gated pulse. The probe pulse and the gated pulse intersect and interact in a nonlinear optical medium, such as a second harmonic generating (SHG) crystal. The nonlinear optical medium then time gates and frequency filters the electromagnetic wave producing an input pulse gated signal. A lens maps delay in a horizontal direction and crystal output angle in a vertical direction. A camera detects the output of the lens and creates a spectrogram of the electromagnetic wave.

    Optical measurement arrangement and method for inclination measurement
    15.
    发明授权
    Optical measurement arrangement and method for inclination measurement 有权
    光学测量布置和倾斜测量方法

    公开(公告)号:US06504608B2

    公开(公告)日:2003-01-07

    申请号:US09748339

    申请日:2000-12-26

    CPC classification number: G03F9/7034 G01B11/0641 G01N21/211

    Abstract: An optical measurement arrangement includes an ellipsometer (45) and a device for ascertaining and correcting directional deviations between the line normal to the specimen surface and the angle bisector (25) between the incident and return beams (23, 24) of the ellipsometer (45). A measurement arrangement includes a mirror objective and a device for ascertaining directional deviations between the line normal to the specimen surface and the optical axis of the mirror objective, which has a deflection element in the unused aperture space of the mirror objective. A direction monitoring beam (30) is directed onto the specimen (P). An optical element for imaging the return reflection of the direction monitoring beam (30) onto an area detector that is connected to an evaluation circuit (46) is also provided. Positioning commands for a specimen stage (12) are available at the outputs of the evaluation circuit (46). By way of the control commands, the specimen stage is caused to tilt until the return reflection on the area detector has assumed the position at which the direction of the normal line corresponds to the direction of the angle bisector (25).

    Abstract translation: 光学测量装置包括椭偏仪(45)和用于确定和校正与样品表面垂直的线与椭圆偏振仪(45)的入射和返回光束(23,24)之间的角度平分线(25)之间的方向偏差的装置, )。 测量装置包括镜面物镜和用于确定在垂直于样品表面的线与反射镜物镜的光轴之间的方向偏差的装置,其在镜面物镜的未使用的孔径空间中具有偏转元件。 方向监测光束(30)被引导到样本(P)上。 还提供了用于将方向监视光束(30)的反射成像到连接到评估电路(46)的区域检测器上的光学元件。 在评估电路(46)的输出处提供用于样品台(12)的定位命令。 通过控制命令,使样本台倾斜直到区域检测器上的返回反射已经假定法线方向对应于角平分线(25)的方向的位置。

    Dual-interferometer method for measuring bending of materials
    16.
    发明授权
    Dual-interferometer method for measuring bending of materials 有权
    用于测量材料弯曲的双干涉仪方法

    公开(公告)号:US06495819B1

    公开(公告)日:2002-12-17

    申请号:US09634553

    申请日:2000-08-08

    CPC classification number: G01B11/161

    Abstract: A method of two interferometric configurations to measure bending of an extended element. The measurement arm of each configuration is a long optical fiber. A first interferometric configuration has a segment of its measurement arm attached to one side of the element. The second interferometric configuration has a segment of its measurement arm attached to one side of the element and another segment of its measurement arm attached to an opposing side of the element. The two configurations are used to obtain two sets of interference fringe measurement values. If one set is subtracted from the other, the result is intensity differential values that indicate only the effects of bending and not of temperature or pressure. Variations of the method can be used for irregularly shaped elements.

    Abstract translation: 一种用于测量延伸元件的弯曲的两种干涉测量配置的方法。 每个配置的测量臂是长光纤。 第一干涉配置具有连接到元件一侧的其测量臂的一段。 第二干涉结构具有附接到元件的一侧的其测量臂的一部分,并且其测量臂的另一段附接到元件的相对侧。 这两种配置用于获得两组干涉条纹测量值。 如果从另一组中减去一组,则结果是仅指示弯曲效果而不是温度或压力的强度差异值。 该方法的变化可用于不规则形状的元件。

    Method of evaluating an anisotropic thin film and an evaluating apparatus
    17.
    发明授权
    Method of evaluating an anisotropic thin film and an evaluating apparatus 失效
    各向异性薄膜的评价方法及评价装置

    公开(公告)号:US06486951B2

    公开(公告)日:2002-11-26

    申请号:US09816300

    申请日:2001-03-23

    CPC classification number: G01N21/211

    Abstract: In an apparatus for evaluating an anisotropic thin film, an optical system generates a light beam having a predetermined diameter and polaraization state to project the light beam as incident light into a thin film sample corresponding to the anisotropic thin film. An analyzer is disposed at an optically down stream side of the thin film sample. At an optically down stream side of the analyzer, a two-dimensional photo-intensity detector is disposed to detect reflected light, obtained from the thin film sample, through the analyzer. The detector produces a light intensity distribution. On the basis of the light intensity distribution, an evaluating unit evaluates an inplane distribution of an optical anisotropy of the thin film sample.

    Abstract translation: 在用于评估各向异性薄膜的装置中,光学系统产生具有预定直径和极化状态的光束,以将作为入射光的光束投射到与各向异性薄膜相对应的薄膜样品中。 分析仪设置在薄膜样品的光学下游侧。 在分析仪的光学下游侧,设置二维光强度检测器,以通过分析器检测从薄膜样品获得的反射光。 检测器产生光强分布。 基于光强度分布,评价单元评价薄膜样品的光学各向异性的面内分布。

    Measuring method of liquid crystal pretilt angle and measuring equipment of liquid crystal pretilt angle

    公开(公告)号:US06473180B2

    公开(公告)日:2002-10-29

    申请号:US09940524

    申请日:2001-08-29

    Inventor: Ichiro Hirosawa

    CPC classification number: G01C23/00

    Abstract: By setting the linearly polarized light with normal incidence on the liquid crystal sample 3 and rotating the liquid crystal sample 3 on a rotation stage 7 within plane, the dependencies of the amplitude ratio as well as the optical retardation of the transmitted light on the azimuth of the liquid crystal sample, with respect to the polarization direction of the incident light, are measured. From these measured results, a liquid crystal pretilt angle is determined.

    Method of monitoring ion implants by examination of an overlying masking material
    19.
    发明授权
    Method of monitoring ion implants by examination of an overlying masking material 有权
    通过检查覆盖掩蔽材料来监测离子植入物的方法

    公开(公告)号:US06462817B1

    公开(公告)日:2002-10-08

    申请号:US09570135

    申请日:2000-05-12

    CPC classification number: H01L22/26 G01N21/211 G01N21/95607 H01J2237/31711

    Abstract: A process control method to monitor ion implantation process conditions by measuring the optical properties of a masking material is provided. A patterned masking material may protect underlying regions of a semiconductor substrate from undergoing a chemical or physical change during an ion implantation process. The patterned masking material, however, may also undergo a chemical or physical change during processing. The chemical or physical changes to the masking material during such processing may also cause the optical properties of the material to change. The optical properties of the masking material may be used to determine the concentration of ions implanted into the semiconductor substrate.

    Abstract translation: 提供了通过测量掩模材料的光学特性来监测离子注入工艺条件的工艺控制方法。 图案化掩模材料可以保护半导体衬底的下面的区域在离子注入过程期间不经历化学或物理变化。 然而,图案化的掩模材料在处理过程中也可能经历化学或物理变化。 在这种处理过程中对掩蔽材料的化学或物理变化也可能导致材料的光学性质改变。 掩模材料的光学性质可用于确定注入到半导体衬底中的离子的浓度。

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