公开(公告)号：US11581220B2

公开(公告)日：2023-02-14

申请号：US17151435

申请日：2021-01-18

Applicant: ASM IP Holding B.V.

Inventor： Bhushan Zope ,  Kiran Shrestha ,  Shankar Swaminathan ,  Chiyu Zhu ,  Henri Tuomas Antero Jussila ,  Qi Xie

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/14 ,  C23C16/02 ,  H01L23/532 ,  C23C16/04 ,  C23C16/455

Abstract: Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process are disclosed. The methods may include: providing a substrate comprising a dielectric surface into a reaction chamber; depositing a nucleation film directly on the dielectric surface; and depositing a molybdenum metal film directly on the nucleation film, wherein depositing the molybdenum metal film includes: contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. Semiconductor device structures including a molybdenum metal film disposed over a surface of a dielectric material with an intermediate nucleation film are also disclosed.

公开(公告)号：US11581186B2

公开(公告)日：2023-02-14

申请号：US15380909

申请日：2016-12-15

Applicant: ASM IP Holding B.V.

Inventor： Ivo Johannes Raaijmakers ,  Jan Willem Maes ,  Werner Knaepen ,  Krzysztof Kamil Kachel

IPC: C23C16/448 ,  C23C16/455 ,  C23C16/44 ,  C23C16/46 ,  C23C16/04 ,  C23C16/52 ,  H01L21/027 ,  H01L21/033 ,  G03F7/20 ,  H01L21/02

Abstract: The disclosure relates to a sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to accommodate at least one substrate; a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated; a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated; a removal flow path to allow removal of gas from the reaction chamber; a removal flow controller to create a gas flow in the reaction chamber to the removal flow path when the removal flow controller is activated; and, a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.

公开(公告)号：US20230017874A1

公开(公告)日：2023-01-19

申请号：US17845150

申请日：2022-06-21

Applicant: ASM IP Holding B.V.

Inventor： Trigagema Gama ,  Ryu Nakano

IPC: C23C16/40 ,  C23C16/458 ,  C23C16/455 ,  C23C16/56

Abstract: Methods and systems for depositing a layer comprising silicon oxide on the substrate are disclosed. Exemplary methods include cyclical deposition methods that include providing a first silicon precursor to the reaction chamber, providing a second silicon precursor, and using a reactant or a non-reactant gas forming silicon oxide on a surface of the substrate. Exemplary methods can further include a treatment step.

公开(公告)号：US20230016537A1

公开(公告)日：2023-01-19

申请号：US17934817

申请日：2022-09-23

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Viljami J. Pore

IPC: H01L21/02 ,  C23C16/455 ,  H01L21/3105 ,  C23C16/40

Abstract: Methods and systems for selectively depositing dielectric films on a first surface of a substrate relative to a passivation layer previously deposited on a second surface are provided. The methods can include at least one cyclical deposition process used to deposit material on the first surface while the passivation layer is removed, thereby preventing deposition over the passivation layer.

公开(公告)号：US20230008131A1

公开(公告)日：2023-01-12

申请号：US17810773

申请日：2022-07-05

Applicant: ASM IP Holding, B.V.

Inventor： Dieter Pierreux ,  Theodorus G.M Oosterlaken ,  Herbert Terhorst ,  Lucian Jdira ,  Bert Jongbloed

IPC: C23C16/44 ,  C23C16/34 ,  C23C16/52 ,  C23C16/455

Abstract: A chemical vapor deposition furnace for depositing silicon nitride films is disclosed. The furnace having a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector inside the process chamber is provided with a plurality of vertically spaced gas injection holes to provide gas introduced at a feed end in an interior of the process gas injector to the process chamber. A valve system connected to the feed end of the process gas injector is being constructed and arranged to connect a source of a silicon precursor and a nitrogen precursor to the feed end for depositing silicon nitride layers. The valve system may connect the feed end of the process gas injector to a cleaning gas system to provide a cleaning gas to remove silicon nitride from the process gas injector and/or the processing chamber.

公开(公告)号：US11551925B2

公开(公告)日：2023-01-10

申请号：US16828885

申请日：2020-03-24

Applicant: ASM IP Holding B.V.

Inventor： HeeSung Kang ,  YoonKi Min ,  WanGyu Lim ,  JinGeun Yu ,  JaeOk Ko ,  YoungHoon Kim

IPC: H01L21/02 ,  H01L21/311

Abstract: A substrate processing method with an improved etch selectivity includes: a first operation for forming a film on a stepped structure having a top surface, a bottom surface, and a side surface connecting the top surface and the bottom surface, wherein a first atmosphere is set to reduce a mean free path of plasma ions and to cause the plasma ions to have no directionality; and a second operation for changing a bonding structure of a portion of the film, wherein a second atmosphere is set to cause the plasma ions to have directionality, wherein the first operation is repeated a plurality of times, the second operation is performed for a predetermined time period, the first operation and the second operation form a group cycle, and the group cycle is repeated by a plurality of times.

公开(公告)号：US20230006031A1

公开(公告)日：2023-01-05

申请号：US17850087

申请日：2022-06-27

Applicant: ASM IP Holding B.V.

Inventor： Alessandra Leonhardt ,  Michael Givens

IPC: H01L49/02 ,  H01L21/285 ,  H01L21/02

Abstract: A noble metal liner and a metal-insulator-metal (MIM) capacitor (MIMCAP) are described along with the methods of manufacture or fabrication. The MIM capacitor includes a liner formed of a thin layer or film of a noble metal, which is only a few nanometers thick, e.g., a thickness in the range of about 0.5 nm to about 5 nm or more. In a finished device such as a MIM capacitor, the noble metal liner is sandwiched between a thicker electrode and the insulator, e.g., a layer or thin film of high or ultra high-k material, thereby providing a cap for the electrode to limit leakage currents in the device.

公开(公告)号：US20220415701A1

公开(公告)日：2022-12-29

申请号：US17847470

申请日：2022-06-23

Applicant: ASM IP Holding B.V.

Inventor： Kazuhiro Nishiwaki

IPC: H01L21/687 ,  B25J11/00 ,  B25J15/00 ,  H01J37/32

Abstract: A substrate processing apparatus is disclosed. An exemplary substrate processing apparatus includes a reaction chamber; a susceptor plate positioned within the reaction chamber, constructed and arranged to support a substrate, and provided with one or more holes; a substrate lift mechanism comprising: a plurality of lift pins to support the substrate; and a lift pin support member to move the lift pins; in a vertical direction through the one or more holes; a substrate transfer robot provided with one or more robotic arms to transfer the substrate to a position above the lift pins; and a gas supply unit constructed and arranged to face the susceptor plate; wherein the gas supply unit is constructed and arranged to move in the vertical direction thereby positioning the gas supply unit in a processing position in the reaction chamber.

公开(公告)号：US20220415677A1

公开(公告)日：2022-12-29

申请号：US17848933

申请日：2022-06-24

Applicant: ASM IP Holding B.V.

Inventor： Junwei Su ,  Rutvij Naik ,  Xing Lin ,  Alexandros Demos ,  Hamed Esmaeilzadehkhosravieh

IPC: H01L21/67 ,  C23C16/48 ,  G02B5/02

Abstract: A reflector includes a reflector body arranged to overlap a reaction chamber of a semiconductor processing system. The reflector body has a grooved surface and a reflective surface extending between a first longitudinal edge of the reflector body and a second longitudinal edge of the reflector body, the reflective surface spaced apart from the grooved surface by a thickness of the reflector body. The grooved surface and the reflective surface define a pyrometer port, two or more elongated slots, and two or more shortened extending through the thickness of the reflector body. The shortened slots outnumber the elongated slots to bias issue of a coolant against the reaction chamber toward the second longitudinal edge of the reflector body. Cooling kits, semiconductor processing systems, and methods of cooling a reaction chamber during deposition of a film onto a substrate supported within the reaction chamber are also described.

公开(公告)号：US20220411931A1

公开(公告)日：2022-12-29

申请号：US17866706

申请日：2022-07-18

Applicant: ASM IP Holding B.V.

Inventor： Timo Hatanpää ,  Katja Väyrynen ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/455 ,  C23C16/14

Abstract: Methods of forming a transition metal containing film on a substrate by a cyclical deposition process are disclosed. The methods may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. The deposition methods may also include forming a transition metal containing film with an electrical resistivity of less than 50 μΩ-cm at a film thickness of less than 50 nanometers.