Abstract:
A system and methodology that can minimize disturbance during an AC operation associated with a memory, such as, program, read and/or erase, is provided. The system pre-charges all or a desired subset of the bit lines in a memory array to a specified voltage, during an AC operation to facilitate reducing AC disturbances between neighboring cells. A pre-charge voltage can be applied to all bit lines in a block in the memory array, or to bit lines associated with a selected memory cell and neighbor memory cells adjacent to the selected memory cell in the block. The system ensures that source and drain voltage levels can be set to desired levels at the same or substantially the same time, while selecting a memory cell. This can facilitate minimizing AC disturbances in the selected memory cell during the AC operation.
Abstract:
A fuel reformer including a first pipe, a second pipe which is disposed in the first pipe, a main heat source, which includes an oxidation catalyst, filling the second pipe adapted to generate thermal energy with a predetermined temperature range through an oxidation reaction of a fuel using the oxidation catalyst; an auxiliary heat source which includes a torch connected to the second pipe to ignite and burn the gaseous fuel, thereby preheating the oxidation catalyst to within a reaction starting temperature range, and a reforming reaction unit which includes a reforming catalyst filling a space between the first and second pipes to generate a reforming gas containing hydrogen through the reforming reaction of the fuel using the reforming catalyst by using the thermal energy generated by the main heat source.
Abstract:
Disclosed are a carbon monoxide remover and a fuel cell reformer including the same. In the reformer, a reformed gas produced from a reforming reaction unit when the reformer is initially driven is used as a fuel for a heat source unit supplying heat to a water gas shift reaction unit. The carbon monoxide remover is connected to the reforming reaction unit that changes fuel into reformed gas with hydrogen. The carbon monoxide remover lowers carbon monoxide contained in the reformed gas. The carbon monoxide remover includes a heat source unit employing the reformed gas as a fuel; and a water gas shift reaction unit provided with a shift catalyst using heat from the heat source unit. The shift catalyst lowers the concentration of carbon monoxide in the reformed gas through reaction between water and carbon monoxide.
Abstract:
Systems, methods, and devices that facilitate applying a predefined negative gate voltage to wordlines adjacent to a selected wordline associated with a memory cell selected during a read or verify operation to facilitate reducing adjacent wordline disturb are presented. A memory component can comprise an optimized operation component that can apply a predefined negative gate voltage to wordlines adjacent to a selected wordline associated with a memory cell selected for a read or verify operation, based at least in part on predefined operation criteria, to facilitate reducing adjacent wordline disturb in the selected memory cell to facilitate reducing a shift in the voltage threshold and maintain a desired operation window. The optimized operation component optionally can include an evaluator component that can facilitate determining whether a negative gate voltage applied to adjacent wordlines is to be adjusted to facilitate reducing adjacent wordline disturb below a predetermined threshold amount.
Abstract:
A semiconductor apparatus and a design method for the semiconductor apparatus allow debugging or repairs by using a spare cell. The semiconductor apparatus includes a plurality of metal layers. At least one repair block performs a predetermined function. A spare block is capable of substituting for a function of the repair block. And at least one of the plurality of metal layers is predetermined to be a repair layer for error revision. At least one pin of the repair block is connected to the repair layer through a first pin extension, and at least one pin of the spare block is capable of extending to the repair layer. When the repair block is to be repaired, the pin extension of the repair layer and the repair block is disconnected, and at least one pin of the spare block is connected to the repair layer through a second pin extension.
Abstract:
Provided are a data storage device using a magnetic domain wall movement and a method of operating the data storage device. The data storage device includes a magnetic layer which has a plurality of magnetic domains, a current applying unit which applies current for a magnetic domain wall movement to the magnetic layer, and a head for reading and writing, wherein the magnetic layer comprises a plurality of perpendicular magnetic layers formed on a substrate in a plurality of rows and columns, and a horizontal magnetic layer formed on the perpendicular magnetic layers to connect the perpendicular magnetic layers.
Abstract:
Provided are an information storage device and a method of operating the same. The information storage device includes: a magnetic layer having a plurality of magnetic domain regions and a magnetic domain wall interposed between the magnetic domain regions; a first unit disposed on a first region which is one of the plurality of magnetic domain regions for recording information to the first region; a second unit connected to the first unit for inducing a magnetic field so as to record information to the first region.
Abstract:
A memory cell includes: a memory cell array unit having a plurality of nano wires arranged vertically on a substrate, each of the plurality of nano wires having a plurality of domains for storing information; a nano wire selection unit formed on the substrate and configured to select at least one of the plurality of nano wires; a domain movement control unit formed on the substrate and configured to control a domain movement operation with respect to at least one of the plurality of nano wires; and a read/write control unit formed on the substrate and configured to control at least one of a read operation and a write operation with respect to at least one of the plurality of nano wires.
Abstract:
A semiconductor device using a magnetic domain wall movement and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a magnetic layer that is formed on a substrate and has a plurality of magnetic domains, and a unit that supplies energy to move a magnetic domain wall in the magnetic layer. The magnetic layer is formed parallel to the substrate, and includes a plurality of prominences and a plurality of depressions alternately formed along a lengthwise direction thereof. The magnetic layer has a stepped form that secures a reliable movement of the magnetic domain wall in units of one bit.
Abstract:
A catalytic combustor and a fuel reformer having the same. The catalytic combustor includes a housing having a cylindrical reaction portion and a second reaction portion surrounding the first reaction portion in a double tube shape. The housing has a first opening for supplying a first fuel and an oxidant to the first reaction portion and a second opening through which an exhaust in the second reaction portion is discharged. The first and second openings are disposed at first sides of the first and second reaction portions, respectively. The first and second reaction portions are connected with each other so that the fluid is communicated with the first and second reaction portions at second sides of the first and second reaction portions. A catalyst is disposed in the first reaction portion, and a mesh layer is inserted into the second reaction portion.