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    CONTROLLING AC DISTURBANCE WHILE PROGRAMMING
    191.
    发明申请
    CONTROLLING AC DISTURBANCE WHILE PROGRAMMING 有权
    控制交流干扰编程

    公开(公告)号：US20110235412A1

    公开(公告)日：2011-09-29

    申请号：US13156763

    申请日：2011-06-09

    Applicant: Sung-Yong Chung ,  Zhizheng Liu ,  Yugi Mizuguchi ,  Xuguang Alan Wang ,  Yi He ,  Ming Kwan ,  Darlene Hamilton ,  Sung-Chul Lee ,  Guowei Wang ,  Nancy Leong

    Inventor： Sung-Yong Chung ,  Zhizheng Liu ,  Yugi Mizuguchi ,  Xuguang Alan Wang ,  Yi He ,  Ming Kwan ,  Darlene Hamilton ,  Sung-Chul Lee ,  Guowei Wang ,  Nancy Leong

    IPC: G11C16/04

    CPC classification number: G11C16/3418 ,  G11C16/0416 ,  G11C16/24 ,  G11C16/3427

    Abstract: A system and methodology that can minimize disturbance during an AC operation associated with a memory, such as, program, read and/or erase, is provided. The system pre-charges all or a desired subset of the bit lines in a memory array to a specified voltage, during an AC operation to facilitate reducing AC disturbances between neighboring cells. A pre-charge voltage can be applied to all bit lines in a block in the memory array, or to bit lines associated with a selected memory cell and neighbor memory cells adjacent to the selected memory cell in the block. The system ensures that source and drain voltage levels can be set to desired levels at the same or substantially the same time, while selecting a memory cell. This can facilitate minimizing AC disturbances in the selected memory cell during the AC operation.

    Abstract translation: 提供了一种能够在与诸如程序，读取和/或擦除之类的存储器相关联的AC操作期间最小化干扰的系统和方法。 在AC操作期间，系统将存储器阵列中的所有或所需的位线子集预充电到指定的电压，以便于减少相邻单元之间的AC干扰。 可以将预充电电压施加到存储器阵列中的块中的所有位线，或者对与所选择的存储器单元相关联的位线以及与块中所选择的存储单元相邻的相邻存储单元。 该系统确保在选择存储器单元时，源极和漏极电压电平可以在相同或基本相同的时间被设置为期望的电平。 这可以有助于在AC操作期间最小化所选择的存储器单元中的AC干扰。

    Semiconductor apparatus capable of error revision using pin extension technique and design method therefor
    195.
    发明申请
    Semiconductor apparatus capable of error revision using pin extension technique and design method therefor 有权
    能够使用引脚扩展技术进行错误修正的半导体装置及其设计方法

    公开(公告)号：US20110140280A1

    公开(公告)日：2011-06-16

    申请号：US12928021

    申请日：2010-12-01

    Applicant: Dong-Yun Kim ,  Dong-Hoon Yeo ,  Hyun-Chul Shin ,  Kyung-Ho Kim ,  Byung-Tae Kang ,  Ju-Yong Shin ,  Sung-Chul Lee

    Inventor： Dong-Yun Kim ,  Dong-Hoon Yeo ,  Hyun-Chul Shin ,  Kyung-Ho Kim ,  Byung-Tae Kang ,  Ju-Yong Shin ,  Sung-Chul Lee

    IPC: H01L23/48 ,  G06F17/50

    CPC classification number: H01L23/525 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A semiconductor apparatus and a design method for the semiconductor apparatus allow debugging or repairs by using a spare cell. The semiconductor apparatus includes a plurality of metal layers. At least one repair block performs a predetermined function. A spare block is capable of substituting for a function of the repair block. And at least one of the plurality of metal layers is predetermined to be a repair layer for error revision. At least one pin of the repair block is connected to the repair layer through a first pin extension, and at least one pin of the spare block is capable of extending to the repair layer. When the repair block is to be repaired, the pin extension of the repair layer and the repair block is disconnected, and at least one pin of the spare block is connected to the repair layer through a second pin extension.

    Abstract translation: 半导体装置的半导体装置和设计方法允许使用备用单元进行调试或维修。 半导体装置包括多个金属层。 至少一个修理块执行预定的功能。 备用块能够代替维修块的功能。 并且多个金属层中的至少一个被预先确定为用于错误修正的修复层。 修复块的至少一个销通过第一销延伸连接到修复层，并且备用块的至少一个引脚能够延伸到修复层。 当修理修理块时，修理层和维修块的销延伸被断开，备用块的至少一个引脚通过第二个引脚延伸连接到修复层。

    Data storage device using magnetic domain wall movement and method of operating the same
    196.
    发明授权
    Data storage device using magnetic domain wall movement and method of operating the same 有权
    使用磁畴壁运动的数据存储装置及其操作方法

    公开(公告)号：US07961491B2

    公开(公告)日：2011-06-14

    申请号：US11730121

    申请日：2007-03-29

    Applicant: Sung-chul Lee ,  Sung-hoon Choa ,  Eun-sik Kim

    Inventor： Sung-chul Lee ,  Sung-hoon Choa ,  Eun-sik Kim

    IPC: G11C19/00

    CPC classification number: G11C11/14 ,  G11C19/0808 ,  Y10S977/933 ,  Y10S977/935

    Abstract: Provided are a data storage device using a magnetic domain wall movement and a method of operating the data storage device. The data storage device includes a magnetic layer which has a plurality of magnetic domains, a current applying unit which applies current for a magnetic domain wall movement to the magnetic layer, and a head for reading and writing, wherein the magnetic layer comprises a plurality of perpendicular magnetic layers formed on a substrate in a plurality of rows and columns, and a horizontal magnetic layer formed on the perpendicular magnetic layers to connect the perpendicular magnetic layers.

    Abstract translation: 提供了使用磁畴壁移动的数据存储装置和操作数据存储装置的方法。 该数据存储装置包括具有多个磁畴的磁性层，向磁性层施加用于磁畴壁运动的电流的电流施加单元和用于读取和写入的磁头，其中该磁性层包括多个 在多个行和列中的基板上形成的垂直磁性层，以及形成在垂直磁性层上以连接垂直磁性层的水平磁性层。

    Information storage devices including vertical nano wires
    198.
    发明申请
    Information storage devices including vertical nano wires 失效
    信息存储设备包括垂直纳米线

    公开(公告)号：US20110063885A1

    公开(公告)日：2011-03-17

    申请号：US12659515

    申请日：2010-03-11

    Applicant: Ho-jung Kim ,  Jai-kwang Shin ,  Sun-ae Seo ,  Sung-chul Lee

    Inventor： Ho-jung Kim ,  Jai-kwang Shin ,  Sun-ae Seo ,  Sung-chul Lee

    IPC: G11C19/00 ,  G11C7/00

    CPC classification number: G11C19/0808 ,  G11C11/161 ,  G11C11/1653 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

    Abstract: A memory cell includes: a memory cell array unit having a plurality of nano wires arranged vertically on a substrate, each of the plurality of nano wires having a plurality of domains for storing information; a nano wire selection unit formed on the substrate and configured to select at least one of the plurality of nano wires; a domain movement control unit formed on the substrate and configured to control a domain movement operation with respect to at least one of the plurality of nano wires; and a read/write control unit formed on the substrate and configured to control at least one of a read operation and a write operation with respect to at least one of the plurality of nano wires.

    Abstract translation: 存储单元包括：存储单元阵列单元，具有垂直地布置在基板上的多个纳米线，所述多个纳米线中的每一个具有用于存储信息的多个域; 形成在所述基板上并被配置为选择所述多个纳米线中的至少一个的纳米线选择单元; 域移动控制单元，形成在所述基板上，并且被配置为控制相对于所述多个纳米线中的至少一个的域移动操作; 以及读/写控制单元，形成在所述基板上并被配置为控制关于所述多根纳米线中的至少一个的读取操作和写入操作中的至少一个。

    Semiconductor device using magnetic domain wall movement and method of manufacturing the same
    199.
    发明授权
    Semiconductor device using magnetic domain wall movement and method of manufacturing the same 失效
    使用磁畴壁运动的半导体器件及其制造方法

    公开(公告)号：US07889533B2

    公开(公告)日：2011-02-15

    申请号：US11727689

    申请日：2007-03-28

    Applicant: In-jun Hwang ,  Sung-chul Lee

    Inventor： In-jun Hwang ,  Sung-chul Lee

    IPC: G11C19/08

    CPC classification number: G11C11/14 ,  G11C19/0808 ,  G11C19/0841

    Abstract: A semiconductor device using a magnetic domain wall movement and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a magnetic layer that is formed on a substrate and has a plurality of magnetic domains, and a unit that supplies energy to move a magnetic domain wall in the magnetic layer. The magnetic layer is formed parallel to the substrate, and includes a plurality of prominences and a plurality of depressions alternately formed along a lengthwise direction thereof. The magnetic layer has a stepped form that secures a reliable movement of the magnetic domain wall in units of one bit.

    Abstract translation: 提供了使用磁畴壁移动的半导体器件和制造该半导体器件的方法。 半导体器件包括形成在基板上并具有多个磁畴的磁性层，以及提供能量以移动磁性层中的磁畴壁的单元。 磁性层与基板平行地形成，并且包括沿其长度方向交替形成的多个凸起和多个凹陷。 磁性层具有阶梯形状，其以一位为单位确保磁畴壁的可靠移动。

    CATALYTIC COMBUSTOR AND FUEL REFORMER HAVING THE SAME
    200.
    发明申请
    CATALYTIC COMBUSTOR AND FUEL REFORMER HAVING THE SAME 失效
    催化燃烧器和具有相同燃料的燃料转化器

    公开(公告)号：US20100303681A1

    公开(公告)日：2010-12-02

    申请号：US12616115

    申请日：2009-11-10

    Applicant: In-Hyuk Son ,  Woo-Cheol Shin ,  Jin-Goo Ahn ,  Jong-Rock Choi ,  Sung-Chul Lee

    Inventor： In-Hyuk Son ,  Woo-Cheol Shin ,  Jin-Goo Ahn ,  Jong-Rock Choi ,  Sung-Chul Lee

    IPC: B01J8/06 ,  F23Q11/00 ,  B01J19/00

    CPC classification number: B01J19/2485 ,  B01J19/2495 ,  B01J2219/00117 ,  C01B3/34 ,  C01B2203/0233 ,  C01B2203/066 ,  C01B2203/0811 ,  C01B2203/0822 ,  C01B2203/0827 ,  F23C6/047 ,  F23C13/04 ,  F23C2900/03002 ,  Y02P20/128

    Abstract: A catalytic combustor and a fuel reformer having the same. The catalytic combustor includes a housing having a cylindrical reaction portion and a second reaction portion surrounding the first reaction portion in a double tube shape. The housing has a first opening for supplying a first fuel and an oxidant to the first reaction portion and a second opening through which an exhaust in the second reaction portion is discharged. The first and second openings are disposed at first sides of the first and second reaction portions, respectively. The first and second reaction portions are connected with each other so that the fluid is communicated with the first and second reaction portions at second sides of the first and second reaction portions. A catalyst is disposed in the first reaction portion, and a mesh layer is inserted into the second reaction portion.

    Abstract translation: 催化燃烧器和具有该催化燃烧器的燃料重整器。 催化燃烧器包括具有圆柱形反应部分的壳体和围绕第二反应部分的双管形状的第二反应部分。 壳体具有用于向第一反应部分供应第一燃料和氧化剂的第一开口和排出第二反应部分中的排气的第二开口。 第一和第二开口分别设置在第一和第二反应部分的第一侧。 第一和第二反应部分彼此连接，使得流体在第一和第二反应部分的第二侧与第一和第二反应部分连通。 催化剂设置在第一反应部分中，并且将网层插入到第二反应部分中。

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