公开(公告)号：US09236267B2

公开(公告)日：2016-01-12

申请号：US13369818

申请日：2012-02-09

Applicant: Ho Wei De ,  Kuei-Liang Lu ,  Ming-Feng Shieh ,  Ching-Yu Chang

Inventor： Ho Wei De ,  Kuei-Liang Lu ,  Ming-Feng Shieh ,  Ching-Yu Chang

IPC: H01L21/308 ,  H01L21/84 ,  H01L27/12

CPC classification number: G03F1/38 ,  G03F7/70466 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/845 ,  H01L27/1211

Abstract: A method for patterning a plurality of features in a non-rectangular pattern, such as on an integrated circuit device, includes providing a substrate including a surface with a plurality of elongated protrusions, the elongated protrusions extending in a first direction. A first layer is formed above the surface and above the plurality of elongated protrusions, and patterned with an end cutting mask. The end cutting mask includes two nearly-adjacent patterns with a sub-resolution feature positioned and configured such that when the resulting pattern on the first layer includes the two nearly adjacent patterns and a connection there between. The method further includes cutting ends of the elongated protrusions using the pattern on the first layer.

Abstract translation: 用于图案化非矩形图案中的多个特征的方法，例如在集成电路器件上，包括提供包括具有多个细长突起的表面的基底，所述细长突起沿第一方向延伸。 第一层形成在多个细长突起的表面上方和上方，并用端部切割掩模图案化。 末端切割掩模包括两个几乎相邻的图案，其具有定位和配置的次分辨率特征，使得当第一层上的所得图案包括两个近似相邻的图案时，以及其间的连接。 该方法还包括使用第一层上的图案切割细长突起的端部。

公开(公告)号：US09122164B2

公开(公告)日：2015-09-01

申请号：US13111534

申请日：2011-05-19

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F7/26 ,  G03F7/20 ,  G03F7/004

CPC classification number: G03F7/2041 ,  G03F7/0046

Abstract: An immersion lithography resist material comprising a matrix polymer having a first polarity and an additive having a second polarity that is substantially greater than the first polarity. The additive may have a molecular weight that is less than about 1000 Dalton. The immersion lithography resist material may have a contact angle that is substantially greater than the contact angle of the matrix polymer.

Abstract translation: 一种浸没式光刻抗蚀剂材料，包括具有第一极性的基质聚合物和具有基本上大于第一极性的第二极性的添加剂。 添加剂可以具有小于约1000道尔顿的分子量。 浸没式光刻抗蚀剂材料可具有基本上大于基质聚合物的接触角的接触角。

公开(公告)号：US08741776B2

公开(公告)日：2014-06-03

申请号：US13368144

申请日：2012-02-07

Applicant: Ho Wei De ,  Ming-Feng Shieh ,  Ching-Yu Chang

Inventor： Ho Wei De ,  Ming-Feng Shieh ,  Ching-Yu Chang

IPC: H01L21/311

CPC classification number: H01L21/845 ,  G03F1/00 ,  H01L21/823431

Abstract: A method for patterning a plurality of features in a non-rectangular pattern on an integrated circuit device includes providing a substrate including a surface with a first layer and a second layer. Forming a plurality of elongated protrusions in a third layer above the first and second layers. Forming a first patterned layer over the plurality of elongated protrusions. The plurality of elongated protrusions are etched to form a first pattern of the elongated protrusions, the first pattern including at least one inside corner. Forming a second patterned layer over the first pattern of elongated protrusions and forming a third patterned layer over the first pattern of elongated protrusions. The plurality of elongated protrusions are etched using the second and third patterned layers to form a second pattern of the elongated protrusions, the second pattern including at least one inside corner.

Abstract translation: 用于在集成电路器件上以非矩形图案形成多个特征的方法包括提供包括具有第一层和第二层的表面的衬底。 在第一层和第二层上方的第三层中形成多个细长突起。 在多个细长突起上形成第一图案层。 多个细长突起被蚀刻以形成细长突起的第一图案，第一图案包括至少一个内角。 在细长突起的第一图案上形成第二图案化层，并在细长突起的第一图案上形成第三图案化层。 使用第二和第三图案化层来蚀刻多个细长突起，以形成细长突起的第二图案，第二图案包括至少一个内角。

公开(公告)号：US08658532B2

公开(公告)日：2014-02-25

申请号：US13599143

申请日：2012-08-30

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L21/02

CPC classification number: H01L21/76811 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/7684 ,  H01L23/522 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Various lithography methods are disclosed. An exemplary lithography method includes forming a first patterned silicon-containing organic polymer layer over a substrate by removing a first patterned resist layer, wherein the first patterned silicon-containing organic polymer layer includes a first opening having a first dimension and a second opening having the first dimension, the first opening and the second opening exposing the substrate; forming a second patterned silicon-containing organic polymer layer over the substrate by removing a second patterned resist layer, wherein a portion of the patterned second silicon-containing organic polymer layer combines with a portion of the first patterned silicon-containing organic polymer layer to reduce the first dimension of the second opening to a second dimension; and etching the substrate exposed by the first opening having the first dimension and the second opening having the second dimension.

Abstract translation: 公开了各种光刻方法。 示例性光刻方法包括通过去除第一图案化抗蚀剂层在衬底上形成第一图案化的含硅有机聚合物层，其中第一图案化含硅有机聚合物层包括具有第一尺寸的第一开口和具有第一开口的第二开口， 第一尺寸，第一开口和第二开口暴露衬底; 通过去除第二图案化的抗蚀剂层在衬底上形成第二图案化的含硅有机聚合物层，其中图案化的第二含硅有机聚合物层的一部分与第一图案化的含硅有机聚合物层的一部分结合以减少 第二开口的第一尺寸到第二尺寸; 并且蚀刻由具有第一尺寸的第一开口暴露的基板和具有第二尺寸的第二开口。

公开(公告)号：US20140017616A1

公开(公告)日：2014-01-16

申请号：US13548557

申请日：2012-07-13

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: B05B1/00 ,  G03F7/20

CPC classification number: G03F7/3021 ,  G03F7/30

Abstract: An apparatus includes at least two tanks, at least two pumps, at least one nozzle, and a chuck. The apparatus provides multiple developers with different polarities during a developing process to target portions of a latent resist profile having different polarities, and thus different solubility. This apparatus also allows a mixture of two developers to be used for the resist film developing. A polarity of the mixture is adjustable by controlling a ratio of one pump flow rate to another pump flow rate and further controlling the resist pattern profile.

Abstract translation: 一种装置包括至少两个罐，至少两个泵，至少一个喷嘴和卡盘。 该装置在显影过程中提供具有不同极性的多个显影剂，以靶向具有不同极性的潜像抗蚀剂图案的部分，因此具有不同的溶解度。 该装置还允许将两种显影剂的混合物用于抗蚀剂膜显影。 通过控制一个泵流量与另一个泵流量的比率并进一步控制抗蚀剂图案轮廓，可以调节混合物的极性。

公开(公告)号：US20140011133A1

公开(公告)日：2014-01-09

申请号：US13542160

申请日：2012-07-05

Applicant: Chen-Yu Liu ,  Ching-Yu Chang

Inventor： Chen-Yu Liu ,  Ching-Yu Chang

IPC: G03F7/004 ,  G03F7/20

CPC classification number: G03F7/0045 ,  G03F7/0163 ,  G03F7/0382 ,  G03F7/0392

Abstract: A photosensitive material and methods of making a pattern on a substrate are disclosed. The photosensitive material includes a polymer that turns soluble to a developer solution after a chemically amplified reaction, and at least one chemical complex having a single diffusion length. The material includes at least one photo-acid generator (PAG) linked to at least one photo decomposable base (PDB) or quencher.

Abstract translation: 公开了一种感光材料和在衬底上制作图案的方法。 感光材料包括在化学放大反应后可溶于显影剂溶液的聚合物，以及具有单个扩散长度的至少一种化学复合物。 该材料包括至少一种与至少一种可光分解碱（PDB）或猝灭剂连接的光酸产生剂（PAG）。

公开(公告)号：US08518628B2

公开(公告)日：2013-08-27

申请号：US11534289

申请日：2006-09-22

Applicant: Ching-Yu Chang ,  Chih-Cheng Chiu

Inventor： Ching-Yu Chang ,  Chih-Cheng Chiu

IPC: G03F7/038 ,  G03F7/039

CPC classification number: G03F7/2041 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/168

Abstract: A material is provided for use in an immersion lithographic process of a semiconductor substrate. The material includes a photo-sensitive polymer configured to turn soluble to a base solution in response to reaction with an acid and at least one of either a base soluble polymer or an acid labile polymer. The base soluble polymer is configured to turn soluble to water in response to reaction with a developer solution. The acid labile polymer is configured to turn soluble to water after releasing a leaving group in reaction to the acid.

Abstract translation: 提供了用于半导体衬底的浸没式光刻工艺中的材料。 该材料包括光敏聚合物，其被配置为响应于与酸和碱溶性聚合物或酸不稳定聚合物中的至少一种而发生反应而转化为碱溶液。 基础可溶性聚合物被配置为响应于与显影剂溶液的反应而使水溶解。 酸不稳定聚合物被配置成在释放离去基团以反应酸之后将其溶于水。

公开(公告)号：US08497201B2

公开(公告)日：2013-07-30

申请号：US13268191

申请日：2011-10-07

Applicant: Tsung-Lin Lee ,  Clement Hsingjen Wann ,  Ching-Yu Chang

Inventor： Tsung-Lin Lee ,  Clement Hsingjen Wann ,  Ching-Yu Chang

IPC: H01L21/4763

CPC classification number: H01L21/0337 ,  H01L21/31144 ,  H01L21/76816

Abstract: A method of fabricating a semiconductor device is provided which includes providing a substrate. A material layer is formed over the substrate. A polymer layer is formed over the material layer. A nano-sized feature is self-assembled using a portion of the polymer layer. The substrate is patterned using the nano-sized feature.

Abstract translation: 提供一种制造半导体器件的方法，其包括提供衬底。 材料层形成在衬底上。 聚合物层形成在材料层上。 使用聚合物层的一部分自组装纳米尺寸的特征。 使用纳米尺寸的特征对衬底进行图案化。

公开(公告)号：US08383322B2

公开(公告)日：2013-02-26

申请号：US11427017

申请日：2006-06-28

Applicant: Ching-Yu Chang ,  Vincent Yu

Inventor： Ching-Yu Chang ,  Vincent Yu

IPC: G03F7/26

CPC classification number: G03F7/2041 ,  G03F7/70341

Abstract: A method of performing immersion lithography on a semiconductor substrate includes providing a layer of resist onto a surface of the semiconductor substrate and exposing the resist layer using an immersion lithography exposure system. The immersion lithography exposure system utilizes a fluid during exposure and may be capable of removing some, but not all, of the fluid after exposure. After exposure, a treatment process is used to neutralize the effect of undesired elements that diffused into the resist layer during the immersion exposure. After treatment, a post-exposure bake and a development step are used.

Abstract translation: 在半导体衬底上进行浸渍光刻的方法包括在半导体衬底的表面上提供抗蚀剂层并使用浸没光刻曝光系统曝光抗蚀剂层。 浸没式光刻曝光系统在曝光期间利用流体，并且可以在曝光后能够去除一些但不是全部的流体。 曝光后，使用处理工艺来中和在浸没曝光期间扩散到抗蚀剂层中的不期望的元素的影响。 处理后，使用曝光后烘烤和显影步骤。

公开(公告)号：US20120329282A1

公开(公告)日：2012-12-27

申请号：US13599143

申请日：2012-08-30

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L21/308

CPC classification number: H01L21/76811 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/7684 ,  H01L23/522 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Various lithography methods are disclosed. An exemplary lithography method includes forming a first patterned silicon-containing organic polymer layer over a substrate by removing a first patterned resist layer, wherein the first patterned silicon-containing organic polymer layer includes a first opening having a first dimension and a second opening having the first dimension, the first opening and the second opening exposing the substrate; forming a second patterned silicon-containing organic polymer layer over the substrate by removing a second patterned resist layer, wherein a portion of the patterned second silicon-containing organic polymer layer combines with a portion of the first patterned silicon-containing organic polymer layer to reduce the first dimension of the second opening to a second dimension; and etching the substrate exposed by the first opening having the first dimension and the second opening having the second dimension.

Abstract translation: 公开了各种光刻方法。 示例性光刻方法包括通过去除第一图案化抗蚀剂层在衬底上形成第一图案化的含硅有机聚合物层，其中第一图案化含硅有机聚合物层包括具有第一尺寸的第一开口和具有第一开口的第二开口， 第一尺寸，第一开口和第二开口暴露衬底; 通过去除第二图案化的抗蚀剂层在衬底上形成第二图案化的含硅有机聚合物层，其中图案化的第二含硅有机聚合物层的一部分与第一图案化的含硅有机聚合物层的一部分结合以减少 第二开口的第一尺寸到第二尺寸; 并且蚀刻由具有第一尺寸的第一开口暴露的基板和具有第二尺寸的第二开口。