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公开(公告)号:US20130147774A1
公开(公告)日:2013-06-13
申请号:US13762276
申请日:2013-02-07
Applicant: Apple Inc.
Inventor: Cheng Ho Yu , Ming Xu , Young Bae Park , Zhibing Ge , Daisuke Nozu , Cheng Chen , Abbas Jamshidi Roudbari , Shih Chang Chang , Shawn R. Gettemy
IPC: G09G3/18
CPC classification number: G09G3/18 , G02F1/13338 , G02F2001/134318 , G09G3/3648 , G09G3/3655 , G09G2300/043 , G09G2310/0224 , G09G2310/0283 , G09G2320/0209
Abstract: Display ground plane structures may contain slits. Image pixel electrodes in the display may be arranged in rows and columns. Image pixels in the display may be controlled using gate lines that are associated with the rows and data lines that are associated with the columns. An electric field may be produced by each image pixel electrode that extends through a liquid crystal layer to an associated portion of the ground plane. The slits in the ground plane may have a slit width. Data lines may be located sufficiently below the ground plane and sufficiently out of alignment with the slits to minimize crosstalk from parasitic electric fields. A three-column inversion scheme may be used when driving data line signals into the display, so that pairs of pixels that straddle the slits are each driven with a common polarity. Gate line scanning patterns may be used that enhance display uniformity.
Abstract translation: 显示接地平面结构可能包含狭缝。 显示器中的图像像素电极可以以行和列布置。 可以使用与与列相关联的行和数据行相关联的门线来控制显示器中的图像像素。 可以通过延伸穿过液晶层的每个图像像素电极产生电场到接地平面的相关部分。 接地平面中的狭缝可以具有狭缝宽度。 数据线可以充分地位于接地平面的下方,并且与狭缝充分地不对齐,以使来自寄生电场的串扰最小化。 当将数据线信号驱动到显示器中时,可以使用三列反转方案,使得跨越狭缝的像素对各自以共同的极性驱动。 可以使用增强显示均匀性的栅极线扫描图案。
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公开(公告)号:US12175907B2
公开(公告)日:2024-12-24
申请号:US18476892
申请日:2023-09-28
Applicant: Apple Inc.
Inventor: Shyuan Yang , Cheng-Chih Hsieh , Jonathan H Beck , Yuchi Che , Tsung-Ting Tsai , Warren S Rieutort-Louis , Abbas Jamshidi Roudbari , Ting-Kuo Chang , Shih Chang Chang , Bhadrinarayana Lalgudi Visweswaran , Jae Won Choi , Kyounghwan Kim
IPC: G09G3/20 , H10K59/131
Abstract: A light emitter that operates through a display may cause display artifacts, even when the light emitter operates using non-visible wavelengths. To mitigate artifacts caused by a light emitter operating through a display, the display may have a higher density of thin-film transistor sub-pixels than emissive sub-pixels. This allows for a region in the display to include emissive sub-pixels but be free of thin-film transistor sub-pixels. The light emitter may operate through this region in the display. Additionally, to reduce the amount of space occupied in the inactive area of a display by gate driver circuitry, at least a portion of the gate driver circuitry may be positioned in the active area of the display. To accommodate the gate driver circuitry, emissive sub-pixels may be laterally shifted relative to corresponding thin-film transistor sub-pixels.
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公开(公告)号:US20240194106A1
公开(公告)日:2024-06-13
申请号:US18476892
申请日:2023-09-28
Applicant: Apple Inc.
Inventor: Shyuan Yang , Cheng-Chih Hsieh , Jonathan H. Beck , Yuchi Che , Tsung-Ting Tsai , Warren S. Rieutort-Louis , Abbas Jamshidi Roudbari , Ting-Kuo Chang , Shih Chang Chang , Bhadrinarayana Lalgudi Visweswaran , Jae Won Choi , Kyounghwan Kim
IPC: G09G3/20 , H10K59/131
CPC classification number: G09G3/20 , H10K59/131 , G09G2300/0452 , G09G2300/0465 , G09G2320/0233 , G09G2320/0242
Abstract: A light emitter that operates through a display may cause display artifacts, even when the light emitter operates using non-visible wavelengths. To mitigate artifacts caused by a light emitter operating through a display, the display may have a higher density of thin-film transistor sub-pixels than emissive sub-pixels. This allows for a region in the display to include emissive sub-pixels but be free of thin-film transistor sub-pixels. The light emitter may operate through this region in the display. Additionally, to reduce the amount of space occupied in the inactive area of a display by gate driver circuitry, at least a portion of the gate driver circuitry may be positioned in the active area of the display. To accommodate the gate driver circuitry, emissive sub-pixels may be laterally shifted relative to corresponding thin-film transistor sub-pixels.
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公开(公告)号:US11810516B2
公开(公告)日:2023-11-07
申请号:US17150818
申请日:2021-01-15
Applicant: Apple Inc.
Inventor: Cheng Chen , Jason C. Sauers , Fletcher R. Rothkopf , David W. Lum , Chun-Yao Huang , Enkhamgalan Dorjgotov , Graham B. Myhre , Bennett S. Wilburn , Paolo Sacchetto , Shih Chang Chang , Wonjae Choi , Cheuk Chi Lo
IPC: G09G3/3266 , G09G3/3275 , G09G3/3225 , G09G3/20 , G09G3/36
CPC classification number: G09G3/3266 , G09G3/20 , G09G3/3225 , G09G3/3275 , G09G3/3677 , G09G3/3688 , G09G2300/0426 , G09G2300/0452 , G09G2310/0205 , G09G2310/027 , G09G2310/0218 , G09G2310/0221 , G09G2310/0267 , G09G2310/0286 , G09G2310/0297 , G09G2310/08 , G09G2330/021 , G09G2340/0407
Abstract: An electronic device such as a head-mounted device may have displays. The display may have regions of lower and higher resolution to reduce data bandwidth and power consumption for the display while preserving satisfactory image quality. Data lines may be shared by lower and higher resolution portions of a display or different portions of a display with different resolutions may be supplied with different numbers of data lines. Data line length may be varied in transition regions between lower resolution and higher resolution portions of a display to reduce visible discontinuities between the lower and higher resolution portions. The lower and higher resolution portions of the display may be dynamically adjusted using dynamically adjustable gate driver circuitry and dynamically adjustable data line driver circuitry.
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公开(公告)号:US20230171988A1
公开(公告)日:2023-06-01
申请号:US17968280
申请日:2022-10-18
Applicant: Apple Inc.
Inventor: Prashant Mandlik , Bhadrinarayana Lalgudi Visweswaran , Ankit Mahajan , Chia-Hao Chang , Christopher E Glazowski , David L Wei , Hui Lu , Takahide Ishii , Themistoklis Afentakis , Han Liu , Cheng-Chih Hsieh , Asli Sirman , Shih Chang Chang , Ko-Wei Chen , Shang-Chih Lin , Tsung-Ting Tsai , Jae Won Choi , Abbas Jamshidi Roudbari , Ting-Kuo Chang , Jean-Pierre S Guillou
CPC classification number: H01L51/5253 , H01L51/5262 , H01L51/5293 , H01L27/323
Abstract: An electronic device may have a display such as an organic light-emitting diode display. The organic light-emitting diode (OLED) display may have an array of organic light-emitting diode pixels that each have OLED layers interposed between a cathode and an anode. A first passivation layer, a first planarization layer, and a second passivation layer may be formed over the cathode. The first and second passivation layers may be formed from inorganic material. A second planarization layer may be formed over the second passivation layer between the second passivation layer and a polarizer. The second planarization layer may planarize the polarizer at the edges of the active area of the display where the polarizer would otherwise have a steep taper. Planarizing the polarizer in this way mitigates undesirable secondary reflections off of the polarizer. The first and second planarization layers may be formed from organic material.
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公开(公告)号:US20230154931A1
公开(公告)日:2023-05-18
申请号:US18155828
申请日:2023-01-18
Applicant: Apple Inc.
Inventor: Hiroshi Osawa , Kyung-Wook Kim , Ming-Chin Hung , Shih Chang Chang , Yu-Cheng Chen
IPC: H01L27/12 , G02F1/1362 , G02F1/1368 , H10K59/126 , H10K59/121
CPC classification number: H01L27/1225 , G02F1/13624 , G02F1/1368 , H01L27/1222 , H01L27/1251 , H01L27/1255 , H10K59/126 , H10K59/1213 , G02F1/13454
Abstract: An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.
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公开(公告)号:US11615746B2
公开(公告)日:2023-03-28
申请号:US17884297
申请日:2022-08-09
Applicant: Apple Inc.
Inventor: Chin-Wei Lin , Hung Sheng Lin , Shih Chang Chang , Shinya Ono
IPC: G09G3/3233 , G09G3/3266 , H01L29/786 , G09G3/3275 , H01L27/12
Abstract: A display may have an array of pixels each of which has a light-emitting diode such as an organic light-emitting diode. A drive transistor and an emission transistor may be coupled in series with the light-emitting diode of each pixel between a positive power supply and a ground power supply. The pixels may include first and second switching transistors. A data storage capacitor may be coupled between a gate and source of the drive transistor in each pixel. Signal lines may be provided in columns of pixels to route signals such as data signals, sensed drive currents from the drive transistors, and predetermined voltages between display driver circuitry and the pixels. The switching transistors, emission transistors, and drive transistors may include semiconducting-oxide transistors and silicon transistors and may be n-channel transistors or p-channel transistors.
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公开(公告)号:US20220392965A1
公开(公告)日:2022-12-08
申请号:US17887340
申请日:2022-08-12
Applicant: Apple Inc.
Inventor: Minhyuk Choi , Rui Liu , Cheng Chen , Chin-Wei Lin , Sang Y. Youn , Shih Chang Chang , Tsung-Ting Tsai
IPC: H01L27/32 , G09G3/3233 , H01L51/52 , H01L31/0232
Abstract: A display may have an array of pixels. Each pixel may have a light-emitting diode such as an organic light-emitting diode. The organic light-emitting diodes may each have an anode that is coupled to a thin-film transistor pixel circuit for controlling the anode. Transparent windows may be formed in the display. The windows may be formed by replacing data storage capacitors and other pixel circuit structures in a subset of the pixels with transparent window structures, by selectively removing portions of light-emitting diode anodes, and by shifting anodes. An array of electrical components such as an array of light sensors may be aligned with the transparent windows and may be used to measure light passing through the transparent windows.
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公开(公告)号:US11417709B2
公开(公告)日:2022-08-16
申请号:US16859904
申请日:2020-04-27
Applicant: Apple Inc.
Inventor: Minhyuk Choi , Rui Liu , Cheng Chen , Chin-Wei Lin , Sang Y. Youn , Shih Chang Chang , Tsung-Ting Tsai
IPC: H01L27/32 , G09G3/3233 , H01L51/52 , H01L31/0232
Abstract: A display may have an array of pixels. Each pixel may have a light-emitting diode such as an organic light-emitting diode. The organic light-emitting diodes may each have an anode that is coupled to a thin-film transistor pixel circuit for controlling the anode. Transparent windows may be formed in the display. The windows may be formed by replacing data storage capacitors and other pixel circuit structures in a subset of the pixels with transparent window structures, by selectively removing portions of light-emitting diode anodes, and by shifting anodes. An array of electrical components such as an array of light sensors may be aligned with the transparent windows and may be used to measure light passing through the transparent windows.
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公开(公告)号:US20220181418A1
公开(公告)日:2022-06-09
申请号:US17504230
申请日:2021-10-18
Applicant: Apple Inc.
Inventor: Jung Yen Huang , Shinya Ono , Chin-Wei Lin , Akira Matsudaira , Cheng Min Hu , Chih Pang Chang , Ching-Sang Chuang , Gihoon Choo , Jiun-Jye Chang , Po-Chun Yeh , Shih Chang Chang , Yu-Wen Liu , Zino Lee
IPC: H01L27/32 , H01L29/786 , H01L29/66
Abstract: A display may include an array of pixels. Each pixel in the array includes an organic light-emitting diode coupled to associated semiconducting oxide transistors. The semiconducting oxide transistors may exhibit different device characteristics. Some of the semiconducting oxide transistors may be formed using a first oxide layer formed from a first semiconducting oxide material using first processing steps, whereas other semiconducting oxide transistors are formed using a second oxide layer formed from a second semiconducting oxide material using second processing steps different than the first processing steps. The display may include three or more different semiconducting oxide layers formed during different processing steps.
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