Optical attenuator
    201.
    发明申请
    Optical attenuator 有权
    光衰减器

    公开(公告)号:US20090323167A1

    公开(公告)日:2009-12-31

    申请号:US12382908

    申请日:2009-03-26

    IPC分类号: G02B26/02

    CPC分类号: G02B6/266

    摘要: An optical attenuator includes a first reflection portion reflecting a light incoming from an optical input portion in a direction different from incoming axis, a second reflection portion reflecting the light from the first reflection portion, an optical output portion outputting the light that is reflected by the first reflection portion after being reflected by the second reflection portion, and an optical-intensity-attenuation filter that is arranged on an optical path between the first reflection portion and the second reflection portion, optical transmittance being shifted in stages according to a position thereof. The first reflection portion is capable of turning to shift an incoming position at the optical-intensity-attenuation filter.

    摘要翻译: 一种光衰减器包括:反射来自光输入部分的入射轴不同于入射轴的光的第一反射部分,反射来自第一反射部分的光的第二反射部分,输出由第一反射部分反射的光的光输出部分; 由第二反射部分反射的第一反射部分和布置在第一反射部分和第二反射部分之间的光路上的光强度衰减滤光器,光透射率根据其位置逐级移位。 第一反射部分能够转动以在光强度衰减滤波器处移动入射位置。

    Tape printer
    202.
    发明授权
    Tape printer 有权
    胶带打印机

    公开(公告)号:US07607468B2

    公开(公告)日:2009-10-27

    申请号:US11038543

    申请日:2005-01-21

    IPC分类号: B32B15/00

    摘要: In the case the die cut label sheet is mounted, by detection of threshold voltage of output signal of the photo sensor, each label provisionally adhered to a front surface of the die cut label sheet is fed to a print start position. In the case the unfixed-length roll sheet is mounted, if the feeding speed is less than 40 mm/sec, by detection of threshold voltage of output signal of the photo sensor, the feeding state of unfixed-length roll sheet is judged, or if the feeding speed is not less than 40 mm/sec, on the basis of voltage change for the predetermined potential difference portion of output signal of the photo sensor, the feeding state of unfixed-length roll sheet is judged.

    摘要翻译: 在通过检测光传感器的输出信号的阈值电压来安装模切标签片的情况下,临时粘附到模切标签片的前表面的每个标签被馈送到打印开始位置。 在安装未固定长度的卷片的情况下,如果进给速度小于40mm / sec,则通过检测光传感器的输出信号的阈值电压,判断未定长卷筒纸的供给状态, 如果进给速度不小于40mm / sec,则基于光电传感器的输出信号的预定电位差部分的电压变化,判断未固定长度的卷片的供给状态。

    Slip printing system
    203.
    发明授权
    Slip printing system 有权
    滑动打印系统

    公开(公告)号:US07528975B2

    公开(公告)日:2009-05-05

    申请号:US10810559

    申请日:2004-03-29

    IPC分类号: G06F15/00 H04W24/00

    CPC分类号: G06Q30/02

    摘要: A slip printing system which can be employed in a service management system is configured to include a host computer, a mobile terminal device, and a mobile printer that is capable of receiving data from the mobile terminal device. The mobile terminal device includes a service information input module. The service information input through the service information input module is transmitted to the host computer. A print data generating module of the host computer generates print data to in accordance with the service information. The print data generated by the print data generating module is transmitted to the mobile terminal device. The mobile terminal device transmits the print data which has been transmitted from the host computer, and the mobile printer prints an image on a slip in accordance with the print data transmitted from the mobile terminal device.

    摘要翻译: 可以在服务管理系统中使用的打印系统被配置为包括能够从移动终端设备接收数据的主计算机,移动终端设备和移动打印机。 移动终端装置包括服务信息输入模块。 通过服务信息输入模块输入的服务信息被传送到主计算机。 主计算机的打印数据生成模块根据服务信息生成打印数据。 由打印数据生成模块生成的打印数据被发送到移动终端装置。 移动终端装置发送从主计算机发送的打印数据,并且移动打印机根据从移动终端装置发送的打印数据,将打印图像打印在纸上。

    Optical device coupling light propagating in optical waveguide with diffraction grating
    205.
    发明授权
    Optical device coupling light propagating in optical waveguide with diffraction grating 有权
    光学器件耦合在光波导中衍射光栅传播的光

    公开(公告)号:US07496127B2

    公开(公告)日:2009-02-24

    申请号:US11400527

    申请日:2006-04-10

    IPC分类号: H01S3/08

    摘要: An optical waveguide propagates a laser beam. Main diffraction grating and sub-diffraction grating couple light propagating in the optical waveguide. The main diffraction grating and the sub-diffraction grating couple the light in such a manner that propagation in a second order transverse mode of the light propagating in the optical waveguide when both the main diffraction grating and the sub-diffraction grating are disposed, is suppressed more than propagation in the second order transverse mode of the light propagating in the optical waveguide when only the main diffraction grating is disposed.

    摘要翻译: 光波导传播激光束。 主衍射光栅和副衍射光栅耦合在光波导中传播的光。 主衍射光栅和副衍射光栅以这样的方式耦合光,即当主衍射光栅和副衍射光栅都布置时,在光波导中传播的光的二次横模的传播被抑制 只有当仅设置主衍射光栅时,在光波导中传播的光的二次横向模式的传播更多。

    Optical semiconductor device and fabrication method thereof
    206.
    发明授权
    Optical semiconductor device and fabrication method thereof 失效
    光半导体器件及其制造方法

    公开(公告)号:US07482617B2

    公开(公告)日:2009-01-27

    申请号:US11244387

    申请日:2005-10-06

    IPC分类号: H01L29/06 H01L21/00

    摘要: In order to prevent As/P replacement at the boundary face of a re-grown semiconductor layer and avoid a crystalline defect caused by the replacement, there is provided an optical semiconductor device comprising: a semiconductor substrate; a striped stacking body including a first semiconductor layer, an active layer, and a second semiconductor layer; and a burying layer burying the striped stacking body striped stacking body, wherein surfaces in contact with a side face and a bottom face of the burying layer are made of a compound semiconductor that contains arsenic (As) alone as a group V element, and a portion other than the surface includes a group V element other than arsenic.

    摘要翻译: 为了防止在再生长的半导体层的边界面处的As / P置换,并且避免由替换引起的晶体缺陷,提供了一种光学半导体器件,包括:半导体衬底; 包括第一半导体层,有源层和第二半导体层的条纹堆叠体; 以及掩埋层状堆叠体条纹叠层体的掩埋层,其中与掩埋层的侧面和底面接触的表面由仅含有砷(As)作为V族元素的化合物半导体构成, 除了表面之外的部分包括除砷以外的第V族元素。

    Optical module having gain member and partial reflection section waveguides formed on a substrate
    207.
    发明授权
    Optical module having gain member and partial reflection section waveguides formed on a substrate 有权
    具有形成在基板上的增益部件和部分反射部分波导的光模块

    公开(公告)号:US07437037B2

    公开(公告)日:2008-10-14

    申请号:US11392646

    申请日:2006-03-30

    IPC分类号: G02B6/26 G02B6/42

    摘要: The present invention is directed to an optical module, which stabilizes an oscillation characteristic of a laser by means of a simple configuration. To this end, a gain member, a partial reflection section connected to the gain member, and an optical device section connected to the partial reflection section are formed integrally into an apparatus of the present invention. The partial reflection section includes an optically-coupling waveguide section having a first light waveguide connected to the gain member, and a second light waveguide which has an optical axis differing from that of the first light waveguide and which is optically coupled to the first light waveguide and optically connected to the optical device section; and a first total reflection mirror formed at an end of the first light waveguide facing the optical device section.

    摘要翻译: 本发明涉及一种通过简单的结构来稳定激光器的振荡特性的光学模块。 为此,将增益部件,连接到增益部件的部分反射部分和连接到部分反射部分的光学装置部分整体地形成在本发明的装置中。 部分反射部分包括具有连接到增益部件的第一光波导管的光耦合波导部分和具有与第一光波导不同的光轴的第二光波导,并且光学耦合到第一光波导 并光学连接到光学器件部分; 以及形成在面向光学元件部的第一光波导的端部的第一全反射镜。

    MIRROR DEVICE AND OPTICAL APPARATUS
    208.
    发明申请
    MIRROR DEVICE AND OPTICAL APPARATUS 有权
    镜子装置和光学装置

    公开(公告)号:US20080239441A1

    公开(公告)日:2008-10-02

    申请号:US12033959

    申请日:2008-02-20

    IPC分类号: G02B26/08

    摘要: The present mirror device for suppressing PDL on the assumption of multiple modes of angles of input light and output light to movable mirrors with respect to the crystal axis of a crystal member at the time light passes through the crystal member. The mirror device includes a mirror system 2 and a flat-shaped crystal member 3 which is arranged in such a manner that a first angle is not larger than a second angle. The crystal member is constructed in such a manner that a third angle is substantially equal to a half of a fourth angle.

    摘要翻译: 本反射镜装置用于在时间光通过晶体部件的情况下假定输入光的多个角度和输出光相对于晶体部件的晶轴相对于可动反射镜的抑制PDL。 镜装置包括镜子系统2和平面状的晶体构件3,其以第一角度不大于第二角度的方式布置。 晶体构件的构造使得第三角度基本上等于第四角度的一半。

    Silicon carbide semiconductor device, and method of manufacturing the same
    209.
    发明申请
    Silicon carbide semiconductor device, and method of manufacturing the same 有权
    碳化硅半导体器件及其制造方法

    公开(公告)号:US20080230787A1

    公开(公告)日:2008-09-25

    申请号:US12076450

    申请日:2008-03-19

    IPC分类号: H01L31/0312 H01L21/336

    摘要: The silicon carbide semiconductor device includes a trench formed from a surface of a drift layer of a first conductivity type formed on a substrate of the first conductivity type, and a deep layer of a second conductivity type located at a position in the drift layer beneath the bottom portion of the trench. The deep layer is formed at a certain distance from base regions of the second conductivity type formed on the drift layer so as to have a width wider than the width of the bottom portion of the trench, and surround both the corner portions of the bottom portion of the trench.

    摘要翻译: 碳化硅半导体器件包括由形成在第一导电类型的衬底上的第一导电类型的漂移层的表面形成的沟槽和位于漂移层中的位于第一导电类型的衬底下方的位置的第二导电类型的深层 沟槽的底部。 深层形成在与漂移层上形成的第二导电类型的基极区相距一定距离处,以使其宽度大于沟槽底部的宽度,并且包围底部的两个角部 的沟槽。

    Method for manufacturing silicon carbide semiconductor device
    210.
    发明申请
    Method for manufacturing silicon carbide semiconductor device 有权
    碳化硅半导体器件的制造方法

    公开(公告)号:US20080153216A1

    公开(公告)日:2008-06-26

    申请号:US12071186

    申请日:2008-02-19

    IPC分类号: H01L21/82

    摘要: A manufacturing method of a silicon carbide semiconductor device includes the steps of: preparing a semiconductor substrate including a silicon carbide substrate, a drift layer and a first semiconductor layer; forming a plurality of first trenches in a cell portion; forming a gate layer on an inner wall of each first trench by an epitaxial growth method; forming a first insulation film on the surface of the semiconductor substrate; forming a gate electrode on the first insulation film for connecting to the gate layer electrically; forming a source electrode on the first insulation film for connecting to the first semiconductor layer in the cell portion; and forming a drain electrode connected to the silicon carbide substrate electrically.

    摘要翻译: 碳化硅半导体器件的制造方法包括以下步骤:制备包括碳化硅衬底,漂移层和第一半导体层的半导体衬底; 在单元部分中形成多个第一沟槽; 通过外延生长法在每个第一沟槽的内壁上形成栅极层; 在所述半导体衬底的表面上形成第一绝缘膜; 在所述第一绝缘膜上形成用于电连接到所述栅极层的栅电极; 在所述第一绝缘膜上形成用于连接到所述单元部分中的所述第一半导体层的源电极; 以及电连接到所述碳化硅衬底的漏电极。