摘要:
An optical attenuator includes a first reflection portion reflecting a light incoming from an optical input portion in a direction different from incoming axis, a second reflection portion reflecting the light from the first reflection portion, an optical output portion outputting the light that is reflected by the first reflection portion after being reflected by the second reflection portion, and an optical-intensity-attenuation filter that is arranged on an optical path between the first reflection portion and the second reflection portion, optical transmittance being shifted in stages according to a position thereof. The first reflection portion is capable of turning to shift an incoming position at the optical-intensity-attenuation filter.
摘要:
In the case the die cut label sheet is mounted, by detection of threshold voltage of output signal of the photo sensor, each label provisionally adhered to a front surface of the die cut label sheet is fed to a print start position. In the case the unfixed-length roll sheet is mounted, if the feeding speed is less than 40 mm/sec, by detection of threshold voltage of output signal of the photo sensor, the feeding state of unfixed-length roll sheet is judged, or if the feeding speed is not less than 40 mm/sec, on the basis of voltage change for the predetermined potential difference portion of output signal of the photo sensor, the feeding state of unfixed-length roll sheet is judged.
摘要:
A slip printing system which can be employed in a service management system is configured to include a host computer, a mobile terminal device, and a mobile printer that is capable of receiving data from the mobile terminal device. The mobile terminal device includes a service information input module. The service information input through the service information input module is transmitted to the host computer. A print data generating module of the host computer generates print data to in accordance with the service information. The print data generated by the print data generating module is transmitted to the mobile terminal device. The mobile terminal device transmits the print data which has been transmitted from the host computer, and the mobile printer prints an image on a slip in accordance with the print data transmitted from the mobile terminal device.
摘要:
An intrinsic GaAs waveguide layer is formed on a p-type AlGaAs cladding layer, a quantum dot active layer is formed further thereon. An n-type AlGaAs cladding layer is formed on the center portion of the quantum dot active layer. Thus-configured semiconductor laser is allowed to successfully suppress the area of the p-n junction plane to a small level, and to obtain a high level of reliability, because there is no need of processing the center portion of the quantum dot active layer, contributive to laser oscillation.
摘要:
An optical waveguide propagates a laser beam. Main diffraction grating and sub-diffraction grating couple light propagating in the optical waveguide. The main diffraction grating and the sub-diffraction grating couple the light in such a manner that propagation in a second order transverse mode of the light propagating in the optical waveguide when both the main diffraction grating and the sub-diffraction grating are disposed, is suppressed more than propagation in the second order transverse mode of the light propagating in the optical waveguide when only the main diffraction grating is disposed.
摘要:
In order to prevent As/P replacement at the boundary face of a re-grown semiconductor layer and avoid a crystalline defect caused by the replacement, there is provided an optical semiconductor device comprising: a semiconductor substrate; a striped stacking body including a first semiconductor layer, an active layer, and a second semiconductor layer; and a burying layer burying the striped stacking body striped stacking body, wherein surfaces in contact with a side face and a bottom face of the burying layer are made of a compound semiconductor that contains arsenic (As) alone as a group V element, and a portion other than the surface includes a group V element other than arsenic.
摘要:
The present invention is directed to an optical module, which stabilizes an oscillation characteristic of a laser by means of a simple configuration. To this end, a gain member, a partial reflection section connected to the gain member, and an optical device section connected to the partial reflection section are formed integrally into an apparatus of the present invention. The partial reflection section includes an optically-coupling waveguide section having a first light waveguide connected to the gain member, and a second light waveguide which has an optical axis differing from that of the first light waveguide and which is optically coupled to the first light waveguide and optically connected to the optical device section; and a first total reflection mirror formed at an end of the first light waveguide facing the optical device section.
摘要:
The present mirror device for suppressing PDL on the assumption of multiple modes of angles of input light and output light to movable mirrors with respect to the crystal axis of a crystal member at the time light passes through the crystal member. The mirror device includes a mirror system 2 and a flat-shaped crystal member 3 which is arranged in such a manner that a first angle is not larger than a second angle. The crystal member is constructed in such a manner that a third angle is substantially equal to a half of a fourth angle.
摘要:
The silicon carbide semiconductor device includes a trench formed from a surface of a drift layer of a first conductivity type formed on a substrate of the first conductivity type, and a deep layer of a second conductivity type located at a position in the drift layer beneath the bottom portion of the trench. The deep layer is formed at a certain distance from base regions of the second conductivity type formed on the drift layer so as to have a width wider than the width of the bottom portion of the trench, and surround both the corner portions of the bottom portion of the trench.
摘要:
A manufacturing method of a silicon carbide semiconductor device includes the steps of: preparing a semiconductor substrate including a silicon carbide substrate, a drift layer and a first semiconductor layer; forming a plurality of first trenches in a cell portion; forming a gate layer on an inner wall of each first trench by an epitaxial growth method; forming a first insulation film on the surface of the semiconductor substrate; forming a gate electrode on the first insulation film for connecting to the gate layer electrically; forming a source electrode on the first insulation film for connecting to the first semiconductor layer in the cell portion; and forming a drain electrode connected to the silicon carbide substrate electrically.