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公开(公告)号:US20220254774A1
公开(公告)日:2022-08-11
申请号:US17173611
申请日:2021-02-11
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor: Uzma B. Rana , Vibhor Jain , Anthony K. Stamper , Qizhi Liu , Siva P. Adusumilli
IPC: H01L27/06 , H01L29/66 , H01L21/8249 , H01L29/732
Abstract: Aspects of the disclosure provide an integrated circuit (IC) structure with a bipolar transistor stack within a substrate. The bipolar transistor stack may include: a collector, a base on the collector, and an emitter on a first portion of the base. A horizontal width of the emitter is less than a horizontal width of the base, and an upper surface of the emitter is substantially coplanar with an upper surface of the substrate. An extrinsic base structure is on a second portion of the base of the bipolar transistor stack, and horizontally adjacent the emitter. The extrinsic base structure includes an upper surface above the upper surface of the substrate.
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公开(公告)号:US20220252910A1
公开(公告)日:2022-08-11
申请号:US17170237
申请日:2021-02-08
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor: Michal Rakowski , Abdelsalam Aboketaf , Kevin K. Dezfulian , Massimo Sorbara
Abstract: Structures for an optical power modulator and methods of fabricating a structure for an optical power modulator. A first waveguide core includes first and second sections. A second waveguide core includes a first section laterally adjacent to the first section of the first waveguide core and a second section laterally adjacent to the second section of the first waveguide core. An interconnect structure is formed over the first waveguide core and the second waveguide core. The interconnect structure includes first and second transmission lines. The first transmission line is physically connected within the interconnect structure to the first section of the first waveguide core. The second transmission line includes a first section physically connected within the interconnect structure to the second section of the first waveguide core and a second section adjacent to the first transmission line.
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公开(公告)号:US20220244457A1
公开(公告)日:2022-08-04
申请号:US17162303
申请日:2021-01-29
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor: Alec Hammond , Yusheng Bian , Michal Rakowski , Won Suk Lee , Asif J. Chowdhury , Roderick A. Augur
Abstract: Structures including a grating coupler and methods of forming a structure that includes a grating coupler. The grating coupler includes segments that are spaced along a longitudinal axis. Each segment is inclined relative to the longitudinal axis. Each segment includes a first curved section having a first curvature and a second curved section having a second curvature that is inverted relative to the first curvature.
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公开(公告)号:US20220238448A1
公开(公告)日:2022-07-28
申请号:US17160447
申请日:2021-01-28
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor: Saquib B. Halim , Frank G. Kuechenmeister , Kashi V. Machani , Christian Goetze
IPC: H01L23/538 , H01L23/00
Abstract: Disclosed are chip module structures, each having a robust in-package interconnect for reliable performance. Some of the chip module structures achieve interconnect robustness through the use of vias in a spiral step pattern within the interconnect itself. Some chip module structures achieve interconnect robustness through the use of an interconnect stabilizer (referred to herein as a stabilization structure, fence or cage)), which includes vias in a repeating step pattern encircling the in-package interconnect, which is electrically isolated from back side solder balls, front side collapse chip connections (referred to herein as C4 connections), and the interconnect itself, and which is optionally connected to ground. Some chip module structures achieve interconnect robustness through the use of a combination of both vias in a spiral step pattern within the interconnect itself and an interconnect stabilizer.
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215.
公开(公告)号:US20220230955A1
公开(公告)日:2022-07-21
申请号:US17151346
申请日:2021-01-18
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor: Alamgir M. Arif , Sunil K. Singh , Dewei Xu , Seung-Yeop Kook , Roderick A. Augur
IPC: H01L23/522 , H01L49/02
Abstract: Embodiments of the disclosure provide an integrated circuit (IC) structure. With capacitor electrodes in different ILD layers. The structure includes a first inter-level dielectric (ILD) layer having a top surface, a first vertical electrode within the first ILD layer, a capacitor dielectric film on a top surface of the first vertical electrode, a second ILD layer over the first ILD layer, and a second vertical electrode within the second ILD layer and on the capacitor dielectric film. The capacitor dielectric film is vertically between the first vertical electrode and the second vertical electrode.
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公开(公告)号:US20220229250A1
公开(公告)日:2022-07-21
申请号:US17151955
申请日:2021-01-19
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor: Yusheng Bian , Roderick A. Augur , Kenneth J. Giewont , Karen Nummy
Abstract: Structures including an edge coupler and methods of forming a structure including an edge coupler. The structure includes a waveguide core over a dielectric layer and a back-end-of-line stack over the dielectric layer and the waveguide core. The back-end-of-line stack includes a side edge and a truncated layer that is overlapped with a tapered section of the waveguide core. The truncated layer has a first end surface adjacent to the side edge and a second end surface above the tapered section of the waveguide core. The truncated layer is tapered from the first end surface to the second end surface.
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公开(公告)号:US11385408B2
公开(公告)日:2022-07-12
申请号:US16849355
申请日:2020-04-15
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor: Yusheng Bian , Won Suk Lee
Abstract: Structures for a polarizer and methods of forming a structure for a polarizer. A polarizer includes a first waveguide core and a layer that is positioned adjacent to a side surface of the first waveguide core. The layer is composed of a first material having a permittivity with an imaginary part that ranges from 0 to about 15. A second waveguide core is positioned over the first waveguide core. The second waveguide core is composed of a second material that is different in composition from the first material.
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公开(公告)号:US20220216198A1
公开(公告)日:2022-07-07
申请号:US17704422
申请日:2022-03-25
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor: Souvick MITRA , Robert J. GAUTHIER, JR. , Alain F. LOISEAU , You LI , Tsung-Che TSAI
IPC: H01L27/02
Abstract: The present disclosure relates to semiconductor structures and, more particularly, to diode triggered Silicon controlled rectifiers and methods of manufacture. The structure includes a diode string comprising a first type of diodes and a second type of diode in bulk technology in series with the diode string of the first type of diodes.
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219.
公开(公告)号:US11381053B2
公开(公告)日:2022-07-05
申请号:US16718329
申请日:2019-12-18
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor: Yusheng Bian , Ajey Poovannummoottil Jacob
Abstract: Embodiments of the disclosure provide a waveguide-confining layer, a photonic integrated circuit (PIC) die with embodiments of a waveguide-confining layer, and methods to form the same. The waveguide-confining layer may include an oxide layer over a buried insulator layer, a silicon-based optical confinement structure embedded within or positioned on the oxide layer, and first and second blocking layers over the oxide layer and separated from each other by a horizontal slot. The first and second blocking layers include a metal or an oxide. A gain medium is positioned on the oxide layer and within the horizontal slot between the first and second blocking layers, and has a lower refractive index than each of the first and second blocking layers. The gain medium is vertically aligned with the silicon-based optical confinement structure, and a portion of the oxide layer separates the gain medium from the silicon-based optical confinement structure.
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220.
公开(公告)号:US11380622B2
公开(公告)日:2022-07-05
申请号:US16953441
申请日:2020-11-20
Applicant: GLOBALFOUNDRIES U.S. INC.
Inventor: Vibhor Jain , Sunil K. Singh , Johnatan A. Kantarovsky , Siva P. Adusumilli , Sebastian T. Ventrone , John J. Ellis-Monaghan , Yves T. Ngu
IPC: H01L23/544 , H01L23/00
Abstract: The disclosure provides a method to authenticate an integrated circuit (IC) structure. The method may include forming a first authentication film (AF) material within the IC structure. A composition of the first AF material is different from an adjacent material within the IC structure. The method includes converting the first AF material into a void within the IC structure. Additionally, the method includes creating an authentication map of the IC structure to include a location of the void in the IC structure for authentication of the IC structure.
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