Abstract:
A method for manufacturing a DRAM cell including two active word lines having a drain region and distinct source regions, including, after the forming of insulated conductive lines, the steps of: depositing a first, then a second selectively etchable insulating layers; etching the second insulating layer to only maintain it above conductive lines; depositing and leveling a third insulating layer selectively etchable with respect to at least the second insulating layer; opening the first and third insulating layers to expose the drain region and an insulating trench; filling the previously-formed opening with a conductive material; polishing the entire structure; and depositing a fourth insulating layer, selectively etchable with respect to the third insulating layer.
Abstract:
A voltage regulator having an output terminal provided for being connected to a load, including an amplifier having its inverting input connected to a reference voltage, and its non-inverting input connected to the output terminal, a charge capacitor arranged between the output terminal and a first supply voltage, first and second voltage-controlled switches each arranged to connect a second supply voltage and the output terminal, and a control means adapted to providing a voltage depending on the output voltage of the amplifier, on the one hand, to the gate of the first switch and, on the other hand, when the current flowing through the first switch reaches a predetermined threshold, to the gate of the second switch.
Abstract:
A regulated voltage generator provides different regulated voltages to an integrated circuit. The regulated voltage generator includes a bandgap reference circuit and at least one gain stage connected to an output thereof. The output voltage of the bandgap reference circuit varies as a function of temperature to compensate for variations in the gain stage made up of first and second transistors. A regulated voltage output by the regulated voltage generator is independent of temperature and of the supply voltage. The value of the regulated voltage is adjusted via a load resistor and via the first and second transistors along with an output transistor of the bandgap reference circuit.
Abstract:
A circuit is provided for reducing losses of the start of a new message caused by the microcontroller of a slave apparatus being unavailable. The circuit generates an interruption signal when the slave apparatus has received and acknowledged a start of a new message but the microcontroller is unavailable because it is processing a preceding message or an application of the slave apparatus.
Abstract:
An initial single-crystal substrate 1 having, locally and on the surface, at least one discontinuity in the single-crystal lattice is formed. The initial substrate is recessed at the discontinuity. The single-crystal lattice is amorphized around the periphery ofthe recess. A layer ofamorphous material having the same chemical composition as that ofthe initial substrate is deposited on the structure obtained. The structure obtained is thermally annealed in order to recrystallize the amorphous material so as to be continuous with the single-crystal lattice ofthe initial substrate.
Abstract:
A buffer circuit includes an input for receiving a logic signal, and a transfer circuit for transferring the logic signal from the input to an output of the buffer circuit. The transfer circuit includes at least one logic gate having a trip point sensitive to a supply voltage of the buffer circuit. The buffer circuit further includes a delivery circuit for delivering an inhibit signal having a predetermined duration when the logic signal has a trailing edge and/or leading edge, and an inhibit circuit for inhibiting the transfer circuit and for isolating the output of the buffer circuit from the input of the buffer circuit when the inhibit signal is delivered. A storage circuit holds a logic value of the logic signal at the output of the buffer circuit when the inhibit signal is delivered.
Abstract:
At least a first base signal and a second base signal are mutually in quadrature and both are capable of mutually exhibiting a quadrature error. These signals are used to formulate two pairs of delayed signals that includes a first delayed signal that is delayed with respect to the first base signal, a second signal delayed in phase opposition with respect to the first delayed signal, a third signal delayed with respect to the second base signal, and a fourth delayed signal in phase opposition with respect to the third delayed signal. The value of each of the delays is continuously adjusted using two differential signals arising from a direct or an indirect cross-mixing of the two pairs of delayed signals to obtain the four delayed signals virtually in quadrature.
Abstract:
An integrated circuit receives as supply voltages a ground reference voltage, a logic supply voltage and a high voltage. A protection device is associated with at least one gate oxide circuit element. The protection device applies to a supply node of the circuit element either the logic supply voltage under normal conditions of operation of the integrated circuit, or the high voltage under abnormal conditions of operation of the integrated circuit for breaking down the gate oxide.
Abstract:
A production of a capacitor includes the simultaneous production, in at least part of an intertrack insulating layer (3) associated with a given metallization level, on the one hand, of the two electrodes (50, 70) and of the dielectric layer (60) of the capacitor and, on the other hand, of a conducting trench (41) which laterally extends the lower electrode of the capacitor, is electrically isolated from the upper electrode and has a transverse dimension smaller than the transverse dimension of the capacitor, and the production, in the interlevel insulating layer (8) covering the intertrack insulating layer, of two conducting pads (80, 81) which come into contact with the upper electrode of the capacitor and with the conducting trench, respectively.
Abstract:
A series device for protection against a heating of aparallel protection element of an equipment of a telephone line, including a bi-directional cut-off element, of normally on state and placed in series with the parallel protection element, a temperature detection element, and a switching element adapted to turning off the cut-off element when the temperature detected by the detection element exceeds a predetermined threshold.