公开(公告)号：US07371671B2

公开(公告)日：2008-05-13

申请号：US11050312

申请日：2005-02-03

Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Jeng Lin

Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Jeng Lin

IPC: H01L21/3205 ,  H01L21/4763

CPC classification number: H01L21/76802 ,  H01L21/31144

Abstract: A method for forming a semiconductor device includes forming a photoresist layer over a substrate and patterning the photoresist layer to form photoresist portions. A second layer is formed over the substrate in areas not covered by the photoresist portions and the photoresist portions are removed. After removing the photoresist portions, the second layer is used to modify the substrate to create at least a portion of the semiconductor device.

Abstract translation: 一种用于形成半导体器件的方法包括在衬底上形成光致抗蚀剂层并图案化光致抗蚀剂层以形成光致抗蚀剂部分。 在不被光致抗蚀剂部分覆盖的区域中的衬底上形成第二层，并去除光致抗蚀剂部分。 在去除光致抗蚀剂部分之后，第二层用于修改基板以产生半导体器件的至少一部分。

公开(公告)号：US20080063976A1

公开(公告)日：2008-03-13

申请号：US11677089

申请日：2007-02-21

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03C5/00 ,  G03C1/00

CPC classification number: G03F7/11 ,  G03F7/0047 ,  G03F7/0757 ,  G03F7/091 ,  G03F7/094

Abstract: A resist material utilized in photolithography patterning includes a first material, and a second material dispersed in the first material. The second material is capable of diffusing to a top surface of the resist material, and has an etch rate different from that of the first material.

Abstract translation: 在光刻图案中使用的抗蚀剂材料包括第一材料和分散在第一材料中的第二材料。 第二材料能够扩散到抗蚀剂材料的顶表面，并且具有与第一材料不同的蚀刻速率。

公开(公告)号：US20070264598A1

公开(公告)日：2007-11-15

申请号：US11416263

申请日：2006-05-01

Applicant: Ching-Yu Chang ,  Burn-Jeng Lin ,  Chin-Hsiang Lin

Inventor： Ching-Yu Chang ,  Burn-Jeng Lin ,  Chin-Hsiang Lin

IPC: G03F7/20

CPC classification number: G03F7/38 ,  G03F7/095

Abstract: A process of forming a fine pattern including forming a first photoresist layer over a first layer of a semiconductor device. Portions of the first photoresist layer are exposed causing a photochemical reaction therein. Prior to developing the first photoresist layer, a second photoresist layer is formed over the first photoresist layer, and wherein at least one of the first photoresist layer and second photoresist layer comprises a photo base generator.

Abstract translation: 一种形成精细图案的方法，包括在半导体器件的第一层上形成第一光致抗蚀剂层。 暴露第一光致抗蚀剂层的部分，导致其中的光化学反应。 在显影第一光致抗蚀剂层之前，在第一光致抗蚀剂层之上形成第二光致抗蚀剂层，并且其中第一光致抗蚀剂层和第二光致抗蚀剂层中的至少一个包括光源发生器。

公开(公告)号：US20070077517A1

公开(公告)日：2007-04-05

申请号：US11324588

申请日：2006-01-03

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03C1/00

CPC classification number: G02B1/111 ,  G03F7/091 ,  G03F7/11 ,  G03F7/2041 ,  Y10S430/111

Abstract: A coating material disposed overlying a photo sensitive layer during an immersion lithography process includes a polymer that is substantially insoluble to an immersion fluid and an acid capable of neutralizing a base quencher from the photo sensitive layer.

Abstract translation: 在浸渍光刻工艺期间设置在光敏层上的涂层材料包括基本上不溶于浸没流体的聚合物和能够从光敏层中和碱猝灭剂的酸。

公开(公告)号：US20070058263A1

公开(公告)日：2007-03-15

申请号：US11225268

申请日：2005-09-13

Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin

Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G02B1/06

CPC classification number: G03F7/70341

Abstract: The present disclosure provides an immersion lithography system. The system includes: an imaging lens having a front surface, a substrate stage positioned underlying the front surface of the imaging lens, and an immersion fluid retaining structure configured to hold a first fluid at least partially filling a space between the front surface and a substrate on the substrate stage. The immersion fluid retaining structure further comprises at least one of: a first inlet positioned proximate the imaging lens and coupled to a vacuum pump system, the first inlet operable to provide the first fluid to the space between the front surface and the substrate, and a second inlet positioned proximate the imaging lens and operable to provide a second fluid on the substrate.

Abstract translation: 本公开提供了一种浸没式光刻系统。 该系统包括：成像透镜，其具有前表面，位于成像透镜的前表面下方的基底台;以及浸没流体保持结构，其被配置为保持至少部分地填充前表面和基底之间的空间的第一流体 在衬底上。 浸没流体保持结构还包括以下至少一个：位于成像透镜附近并联接到真空泵系统的第一入口，第一入口可操作以将第一流体提供到前表面和基底之间的空间，以及 第二入口位于成像透镜附近并可操作以在基底上提供第二流体。

公开(公告)号：US20060281320A1

公开(公告)日：2006-12-14

申请号：US11401690

申请日：2006-04-11

Applicant: Chin-Hsiang Lin ,  Ching-Yu Chang

Inventor： Chin-Hsiang Lin ,  Ching-Yu Chang

IPC: H01L21/311

CPC classification number: G03F7/405

Abstract: A method is disclosed for forming a photoresist pattern with enhanced etch resistance on a semiconductor substrate. A photoresist pattern is first formed on the substrate. A silicon-containing polymer layer is deposited over the photoresist pattern on the substrate. A thermal treatment is performed to form a cross-linked anti-etch shielding layer between the photoresist pattern and the silicon-containing layer. Then, the remaining silicon containing layer is removed. A plasma treatment is performed in order to increase an etch resistance of the cross-linked anti-etch shielding layer and the photoresist pattern.

公开(公告)号：US20060281030A1

公开(公告)日：2006-12-14

申请号：US11152559

申请日：2005-06-14

Applicant: Chin-Hsiang Lin ,  Ching-Yu Chang

Inventor： Chin-Hsiang Lin ,  Ching-Yu Chang

IPC: G03F7/26

CPC classification number: G03F7/405

Abstract: A method is disclosed for forming a photoresist pattern with enhanced etch resistance on a semiconductor substrate. A photoresist pattern is first formed on the substrate. A silicon-containing polymer layer is deposited over the photoresist pattern on the substrate. A thermal treatment is performed to form a cross-linked anti-etch shielding layer between the photoresist pattern and the silicon-containing layer. Then, the remaining silicon containing layer is removed. A plasma treatment is performed in order to increase an etch resistance of the cross-linked anti-etch shielding layer and the photoresist pattern.

公开(公告)号：US20060028626A1

公开(公告)日：2006-02-09

申请号：US10910480

申请日：2004-08-03

Applicant: Ching-Yu Chang ,  Chien-Hung Lin ,  Chin-Hsiang Lin ,  David Lu ,  Horng-Huei Tseng ,  Burn-Jeng Lin

Inventor： Ching-Yu Chang ,  Chien-Hung Lin ,  Chin-Hsiang Lin ,  David Lu ,  Horng-Huei Tseng ,  Burn-Jeng Lin

IPC: G03B27/52

CPC classification number: G03F7/70341

Abstract: A megasonic immersion lithography exposure apparatus and method for substantially eliminating microbubbles from an exposure liquid in immersion lithography is disclosed. The apparatus includes an optical system for projecting light through a mask and onto a wafer. An optical transfer chamber is provided adjacent to the optical system for containing an exposure liquid. At least one megasonic plate operably engages the optical transfer chamber for inducing sonic waves in and eliminating microbubbles from the exposure liquid.

Abstract translation: 公开了一种用于在浸没式光刻中基本上消除曝光液体中的微泡的兆声浸没式光刻曝光装置和方法。 该装置包括用于通过掩模将光投射到晶片上的光学系统。 光学传递室邻近光学系统设置，用于容纳曝光液体。 至少一个兆欧表板可操作地接合光学传递室，用于在曝光液体中引入声波并消除微泡。

公开(公告)号：US20050272221A1

公开(公告)日：2005-12-08

申请号：US10864562

申请日：2004-06-08

Applicant: Yu Yen ,  Ching-Yu Chang

Inventor： Yu Yen ,  Ching-Yu Chang

IPC: H01L21/66 ,  H01L23/544

CPC classification number: H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

Abstract: An integrated circuit in which measurement of the alignment between subsequent layers has less susceptibility to stress induced shift. A first layer of the structure has a first overlay mark. A second and/or a third layer are formed in the alignment structure and on the first layer. Portions of the second and/or third layer are selectively removed from regions in and around the first overlay mark. A second overlay mark is formed and aligned to the first overlay mark. The alignment between the second overlay mark and first overlay mark may be measured with an attenuated error due to reflection and refraction or due to an edge profile shift of the first overlay mark.

Abstract translation: 一种集成电路，其中后续层之间的对准测量对应力诱导偏移具有较小的敏感性。 该结构的第一层具有第一覆盖标记。 在对准结构中和第一层上形成第二层和/或第三层。 第二层和/或第三层的部分从第一重叠标记中和周围的区域选择性地去除。 形成第二重叠标记并与第一覆盖标记对准。 可以由于反射和折射或由于第一重叠标记的边缘轮廓偏移而具有衰减误差来测量第二覆盖标记和第一覆盖标记之间的对准。

公开(公告)号：US20050214654A1

公开(公告)日：2005-09-29

申请号：US10810920

申请日：2004-03-26

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03C5/00 ,  G03F1/14 ,  G03F9/00 ,  G21K5/10 ,  H01J37/08

CPC classification number: G03F1/60 ,  G03F1/40 ,  H01J2237/31794

Abstract: An ESD-resistant photomask and method of preventing mask ESD damage is disclosed. The ESD-resistant photomask includes a mask substrate, a pattern-forming material provided on the substrate, a circuit pattern defined by exposure regions etched in the pattern-forming material, and positive or negative ions implanted into the mask substrate throughout ion implantation regions. The ions in the ion implantation regions dissipate electrostatic charges on the mask, thus preventing the buildup of electrostatic charges which could otherwise attract image-distorting particles to the mask or damage the mask.

Abstract translation: 公开了一种防静电防护光掩模和防止掩膜ESD损伤的方法。 防静电光掩模包括掩模基板，设置在基板上的图案形成材料，由在图案形成材料中蚀刻的曝光区域限定的电路图案，以及在离子注入区域中注入到掩模基板中的正或负离子。 离子注入区域中的离子消耗掩模上的静电电荷，从而防止静电电荷的积累，否则可能会吸引图像变形颗粒到掩模或损坏掩模。