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    Method for making an emissive cathode
    211.
    发明授权
    Method for making an emissive cathode 失效
    制造发射阴极的方法

    公开(公告)号：US07785164B2

    公开(公告)日：2010-08-31

    申请号：US11915222

    申请日：2006-05-29

    Applicant: Robert Meyer ,  Brigitte Montmayeul

    Inventor： Robert Meyer ,  Brigitte Montmayeul

    IPC: H01J17/49 ,  H01J9/00

    CPC classification number: H01J9/025 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  D01F9/127 ,  H01J1/3048 ,  H01J31/127 ,  H01J2201/30469 ,  H01J2201/319 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/055

    Abstract: A method for manufacturing a triode type cathode structure including depositing and etching: a cathode layer as cathode conductors; a grid layer as grid conductors; an electrical insulation layer and the grid conductors until reaching a resistive layer to provide cavities; and the cathode conductors to have a perforated structure at the intersection of the cathode conductors and grid conductors. Etching the grid conductors and the electrical insulation layer includes: a) depositing a resin layer on the grid layer, b) lithography and development of the resin layer according to a pattern that will form emissive pads, c) etching the grid layer according to the pattern, d) etching the insulation layer subjacent to the grid layer by extending the etching beyond emissive pad patterns, e) etching the grid layer at zones exposed by etching the insulation layer until reaching the resin layer, f) depositing a catalyst layer in openings of the resin layer to form emissive pads at the bottom of the cavities, and g) eliminating the resin layer.

    Abstract translation: 一种制造三极管型阴极结构的方法，包括沉积和蚀刻：阴极层作为阴极导体; 栅格层作为栅格导体; 电绝缘层和栅格导体，直到到达电阻层以提供空腔; 并且阴极导体在阴极导体和栅格导体的交叉处具有穿孔结构。 栅格导体和电绝缘层的蚀刻包括：a）在栅格层上沉积树脂层，b）根据将形成发射焊盘的图案对树脂层进行光刻和显影，c）根据 图案，d）通过将蚀刻延伸超过发光垫图案来蚀刻栅格层以下的绝缘层，e）在通过蚀刻绝缘层暴露的区域蚀刻栅格层直到到达树脂层，f）在开口中沉积催化剂层 的树脂层，以在空腔的底部形成发光垫，并且g）消除树脂层。

    ELECTRON SOURCE AND IMAGE DISPLAY APPARATUS
    212.
    发明申请
    ELECTRON SOURCE AND IMAGE DISPLAY APPARATUS 审中-公开
    电子源和图像显示设备

    公开(公告)号：US20100007584A1

    公开(公告)日：2010-01-14

    申请号：US12487823

    申请日：2009-06-19

    Applicant: Tomoya Onishi

    Inventor： Tomoya Onishi

    IPC: G09G3/20

    CPC classification number: H01J31/127 ,  B82Y10/00 ,  H01J1/312 ,  H01J29/02 ,  H01J2201/3125 ,  H01J2201/319 ,  H01J2329/0489 ,  H01J2329/0494

    Abstract: An electron source has a plurality of electron-emitting devices, a plurality of scanning wirings and a plurality of modulation wirings which connect the plurality of electron-emitting devices into a matrix pattern, a scanning wiring connecting electrode which connects the electron-emitting device and the scanning wiring, a modulation wiring connecting electrode which connects the electron-emitting device and the modulation wiring, and a bypass wiring which is insulated from the scanning wiring and the modulation wiring and is arranged in parallel with the scanning wiring or the modulation wiring. The connecting electrode of any one of the scanning wiring connecting electrode and the modulation wiring connecting electrode, which is closer to the bypass wiring, has an overcurrent suppressing portion which suppresses flowing of a certain or more electric current to the connecting electrode.

    Abstract translation: 电子源具有多个电子发射器件，多个扫描布线和将多个电子发射器件连接成矩阵图案的多个调制布线，连接电子发射器件的扫描布线连接电极和 扫描布线，连接电子发射器件和调制布线的调制布线连接电极以及与扫描布线和调制布线绝缘并与扫描布线或调制布线并联布置的旁路布线。 更靠近旁路布线的扫描布线连接电极和调制布线连接电极中的任一个的连接电极具有抑制某些或更多电流流向连接电极的过电流抑制部。

    Field emission display in which a field emission device is applied to a flat display
    217.
    发明授权
    Field emission display in which a field emission device is applied to a flat display 失效
    场致发射显示器，其中场发射装置应用于平板显示器

    公开(公告)号：US07141923B2

    公开(公告)日：2006-11-28

    申请号：US10824547

    申请日：2004-04-15

    Applicant: Yoon Ho Song ,  Chi Sun Hwang ,  Kwang Bok Kim

    Inventor： Yoon Ho Song ,  Chi Sun Hwang ,  Kwang Bok Kim

    IPC: H01J1/62

    CPC classification number: H01J29/04 ,  H01J29/481 ,  H01J31/127 ,  H01J2201/319

    Abstract: Provided is a field emission display in which a gate hole having an inclined inner wall and a gate electrode around the gate hole are formed between an anode plate having a phosphor and a cathode plate having a field emitter and a control device for controlling a field emission current, whereby the voltage applied to the gate electrode of the gate plate serves to prohibit an electron emission of the field emitter by the anode voltage, and prevent a local arching by forming a totally uniform potential, so that the life time of the field emission display can be improved, and the gate hole having the inclined inner wall enables a fabrication of a filed emission display panel having a high brightness without an additional focusing grid.

    Abstract translation: 本发明提供一种场致发射显示器，其具有在具有荧光体的阳极板和具有场致发射体的阴极板之间形成有围绕栅极孔的倾斜内壁和栅电极的栅极孔和用于控制场致发射的控制装置 电流，由此施加到栅极板的栅电极的电压用于禁止由阳极电压发射场发射体的电子发射，并且通过形成完全均匀的电位来防止局部拱起，使得场致发射的寿命 可以改善显示，并且具有倾斜内壁的门孔能够制造具有高亮度的场发射显示面板，而不需要附加的聚焦网格。

    Nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplate
    219.
    发明授权
    Nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplate 失效
    氮和磷掺杂的非晶硅作为场致发射显示器件基板的电阻器

    公开(公告)号：US06911766B2

    公开(公告)日：2005-06-28

    申请号：US10644443

    申请日：2003-08-19

    Applicant: Kanwal K. Raina ,  Benham Moradi

    Inventor： Kanwal K. Raina ,  Benham Moradi

    IPC: H01J1/02 ,  H01J1/304 ,  H01J1/62 ,  H01J9/02 ,  H01J19/02 ,  H01J63/04

    CPC classification number: H01J1/30 ,  H01J1/304 ,  H01J1/3044 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/00

    Abstract: Described herein is a resistor layer for use in field emission display devices and the like, and its method of manufacture. The resistor layer is an amorphous silicon layer doped with nitrogen and phosphorus. Nitrogen concentration in the resistor layer is preferably between about 5 and 15 atomic percent. The presence of nitrogen and phosphorus in the silicon prevents diffusion of Si atoms into metal conductive layers such as aluminum, even up to diffusion and packaging temperatures. The nitrogen and phosphorus also prevent defects from forming at the boundary between the resistor layer and metal conductor. This leads to better control over shorting and improved resistivity in the resistor.

    Abstract translation: 这里描述的是用于场发射显示装置等的电阻层及其制造方法。 电阻层是掺杂有氮和磷的非晶硅层。 电阻层中的氮浓度优选为约5至15原子％。 硅中的氮和磷的存在防止Si原子扩散到金属导电层如铝中，甚至达到扩散和封装温度。 氮和磷还可以防止在电阻层和金属导体之间的边界处形成缺陷。 这导致更好地控制电阻器的短路和改善电阻率。

    Field emission display
    220.
    发明申请
    Field emission display 失效
    场发射显示

    公开(公告)号：US20050127821A1

    公开(公告)日：2005-06-16

    申请号：US10824547

    申请日：2004-04-15

    Applicant: Yoon Song ,  Chi Hwang ,  Kwang Kim

    Inventor： Yoon Song ,  Chi Hwang ,  Kwang Kim

    IPC: H01J29/04 ,  G09G3/20 ,  G09G3/22 ,  H01J1/30 ,  H01J29/48 ,  H01J31/12 ,  H01L21/336 ,  H01L29/786 ,  H05B37/00

    CPC classification number: H01J29/04 ,  H01J29/481 ,  H01J31/127 ,  H01J2201/319

    Abstract: Provided is a field emission display in which a gate hole having an inclined inner wall and a gate electrode around the gate hole are formed between an anode plate having a phosphor and a cathode plate having a field emitter and a control device for controlling a field emission current, whereby the voltage applied to the gate electrode of the gate plate serves to prohibit an electron emission of the field emitter by the anode voltage, and prevent a local arching by forming a totally uniform potential, so that the life time of the field emission display can be improved, and the gate hole having the inclined inner wall enables a fabrication of a filed emission display panel having a high brightness without an additional focusing grid.

    Abstract translation: 本发明提供一种场致发射显示器，其具有在具有荧光体的阳极板和具有场致发射体的阴极板之间形成有围绕栅极孔的倾斜内壁和栅电极的栅极孔和用于控制场致发射的控制装置 电流，由此施加到栅极板的栅电极的电压用于禁止由阳极电压发射场发射体的电子发射，并且通过形成完全均匀的电位来防止局部拱起，使得场致发射的寿命 可以改善显示，并且具有倾斜内壁的门孔能够制造具有高亮度的场发射显示面板，而不需要附加的聚焦网格。

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