公开(公告)号：US20110215292A1

公开(公告)日：2011-09-08

申请号：US12874425

申请日：2010-09-02

Applicant: Kotaro Zaima ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

Inventor： Kotaro Zaima ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

IPC: H01L33/04 ,  H01L21/18

CPC classification number: H01L33/06 ,  H01L21/18 ,  H01L33/04 ,  H01L33/22 ,  H01L33/24

Abstract: Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed.

Abstract translation: 某些实施例提供了一种用于制造半导体发光器件的方法，包括：在第一衬底上提供第一堆叠膜，所述第一叠层膜通过堆叠p型氮化物半导体层，具有多量子阱结构的活性层 氮化物半导体和n型氮化物半导体层; 在n型氮化物半导体层的上表面上形成n电极; 并且通过使用碱性溶液在n型氮化物半导体层的上表面上进行湿式蚀刻，在n型氮化物半导体层的上表面上形成凹凸区域，除了其中 形成n电极。

公开(公告)号：US20110198561A1

公开(公告)日：2011-08-18

申请号：US12874510

申请日：2010-09-02

Applicant: Koichi TACHIBANA ,  Hajime Nago ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Shinya Nunoue

Inventor： Koichi TACHIBANA ,  Hajime Nago ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Shinya Nunoue

IPC: H01L33/32

CPC classification number: H01L33/145 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32 ,  H01S5/34333

Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting portion, a first layer, a second layer, and an intermediate layer. The semiconductor layers include nitride semiconductor. The light emitting portion is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a quantum well layer. The first layer is provided between the light emitting portion and the p-type semiconductor layer and includes AlX1Ga1-x1N having first Al composition ratio x1. The second layer is provided between the first layer and the p-type semiconductor layer and includes Alx2Ga1-x2N having second Al composition ratio x2 higher than the first Al composition ratio x1. The intermediate layer is provided between the first layer and the light emitting portion and has a thickness not smaller than 3 nanometers and not larger than 8 nanometers and includes Inz1Ga1-z1N (0≦z1

Abstract translation: 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，发光部分，第一层，第二层和中间层。 半导体层包括氮化物半导体。 发光部分设置在n型半导体层和p型半导体层之间，并且包括量子阱层。 第一层设置在发光部和p型半导体层之间，并且包括具有第一Al组成比x1的AlX1Ga1-x1N。 第二层设置在第一层和p型半导体层之间，并且包括具有比第一Al组成比x1高的第二Al组成比x2的Al x2 Ga1-x2N。 中间层设置在第一层和发光部之间，并且具有不小于3纳米且不大于8纳米的厚度，并且包括Inz1Ga1-z1N（0＆nlE; z1 <1）。

公开(公告)号：US20110147775A1

公开(公告)日：2011-06-23

申请号：US12874413

申请日：2010-09-02

Applicant: Toshiki Hikosaka ,  Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

Inventor： Toshiki Hikosaka ,  Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

IPC: H01L33/50

CPC classification number: H01L33/50 ,  H01L24/29 ,  H01L24/32 ,  H01L33/44 ,  H01L33/504 ,  H01L33/58 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

Abstract: According to one embodiment, a light emitting device includes a semiconductor light emitting element to emit a first light, a mounting member, first and second wavelength conversion layers and a transparent layer. The first wavelength conversion layer is provided between the element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The semiconductor light emitting element is disposed between the second wavelength conversion layer and the first wavelength conversion layer. The second wavelength conversion layer absorbs the first light and emits a third light having a wavelength longer than the wavelength of the first light. The transparent layer is provided between the element and the second wavelength conversion layer. The transparent layer is transparent to the first, second, and third lights.

Abstract translation: 根据一个实施例，发光器件包括发射第一光的半导体发光元件，安装构件，第一和第二波长转换层以及透明层。 第一波长转换层设置在与安装构件接触的元件和安装构件之间。 第一波长转换层吸收第一光并发射波长比第一光的波长长的第二光。 半导体发光元件设置在第二波长转换层和第一波长转换层之间。 第二波长转换层吸收第一光并发射波长比第一光的波长长的第三光。 透明层设置在元件和第二波长转换层之间。 透明层对于第一，第二和第三光是透明的。

公开(公告)号：US07915630B2

公开(公告)日：2011-03-29

申请号：US12408810

申请日：2009-03-23

Applicant: Yasushi Hattori ,  Shinji Saito ,  Shinya Nunoue ,  Eiji Muramoto ,  Koichi Tachibana ,  Saori Abe ,  Jongil Hwang ,  Maki Sugai

Inventor： Yasushi Hattori ,  Shinji Saito ,  Shinya Nunoue ,  Eiji Muramoto ,  Koichi Tachibana ,  Saori Abe ,  Jongil Hwang ,  Maki Sugai

IPC: H01L33/00

CPC classification number: H01L33/507 ,  B82Y20/00 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01S5/021 ,  H01S5/0213 ,  H01S5/18 ,  H01S5/183 ,  H01S5/2027 ,  H01S5/327 ,  H01S5/34333 ,  H01S5/42 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting device which includes a semiconductor light-emitting element, and a plurality of plate-like wavelength conversion members which are disposed to face the semiconductor light-emitting element and are inclined with respect to the optical axis of excitation light emitted from the semiconductor light-emitting element, the plate-like wavelength conversion members containing respectively a fluorescent material which is capable of absorbing the excitation light and outputting light having a different wavelength from that of the excitation light, and the plate-like wavelength conversion members as a whole emitting visible light.

Abstract translation: 一种发光装置，其包括半导体发光元件和多个板状波长转换构件，所述多个板状波长转换构件设置成面对所述半导体发光元件并且相对于从所述半导体发光元件发射的激发光的光轴倾斜 半导体发光元件，板状波长转换构件分别包含能够吸收激发光并输出与​​激发光的波长不同的光的荧光材料，并且板状波长转换构件为 整个发射可见光。

公开(公告)号：US20110037049A1

公开(公告)日：2011-02-17

申请号：US12717653

申请日：2010-03-04

Applicant: Koichi TACHIBANA ,  Hajime Nago ,  Toshiki Hikosaka ,  Shinya Nunoue

Inventor： Koichi TACHIBANA ,  Hajime Nago ,  Toshiki Hikosaka ,  Shinya Nunoue

IPC: H01L33/04 ,  H01L33/30

CPC classification number: H01L33/32 ,  H01L33/06

Abstract: Disclosed is a nitride semiconductor light-emitting device including a substrate, a pair of p-type and n-type clad layers formed on the substrate, and an active layer having a single quantum well structure or a multiple quantum well structure, which is sandwiched between the p-type clad layer and the n-type clad layer, and includes a quantum well layer and a pair of barrier layers each having a larger bandgap than that of the quantum well layer, the quantum well layer being sandwiched between the pair of barrier layers. Each of the pair of barrier layers has a multi-layer structure including, starting from the quantum well layer side, a first subbarrier layer having a composition of Iny1Ga1-y1N, a second subbarrier layer having a composition of Iny2Ga1-y2N and a third subbarrier layer having a composition of Iny3Ga1-y3N, in which y1, y2 and y3 satisfy the relationship of 0≦y1,y3

Abstract translation: 公开了一种氮化物半导体发光器件，其包括衬底，形成在衬底上的一对p型和n型覆盖层以及具有单量子阱结构或多量子阱结构的有源层，其夹在 在p型覆盖层和n型覆盖层之间，包括量子阱层和一对阻挡层，每个阻挡层的带隙比量子阱层的带隙大，量子阱层夹在一对 阻挡层。 所述一对势垒层中的每一个具有多层结构，包括从量子阱层侧开始具有In y Ga 1-y N N的组成的第一子屏蔽层，具有In y Ga 1-y N N的组成的第二子隔离层和第三子阱 y1，y2和y3满足0＆nlE; y1，y3

公开(公告)号：US07795059B2

公开(公告)日：2010-09-14

申请号：US12098309

申请日：2008-04-04

Applicant: Shinji Saito ,  Shinya Nunoue

Inventor： Shinji Saito ,  Shinya Nunoue

IPC: H01L21/00

CPC classification number: H01L33/385 ,  H01L33/20 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor light-emitting element has a laminated section which has an active layer made of a semiconductor, and first and second clad layers each being disposed to sandwich the active layer and made of a semiconductor, a pair of first high-reflection layers each being disposed to sandwich the active layer in a first direction orthogonal to the laminated direction of the laminated section, and a low-reflection layer and a second high-reflection layer each being disposed to sandwich the active layer in a second direction orthogonal to the laminated direction and crossing to the first direction.

Abstract translation: 半导体发光元件具有层叠部，该层叠部具有由半导体构成的有源层，第一和第二包层各自设置为夹持有源层并由半导体构成，一对第一高反射层为 被配置成沿着与所述层叠部的层叠方向正交的第一方向夹持所述有源层，以及低反射层和第二高反射层，各自设置成沿与所述层叠方向正交的第二方向夹持所述有源层 并跨越第一个方向。

公开(公告)号：US20100187497A1

公开(公告)日：2010-07-29

申请号：US12716668

申请日：2010-03-03

Applicant: Hajime NAGO ,  Koichi Tachibana ,  Shinji Saito ,  Yoshiyuki Harada ,  Shinya Nunoue

Inventor： Hajime NAGO ,  Koichi Tachibana ,  Shinji Saito ,  Yoshiyuki Harada ,  Shinya Nunoue

IPC: H01L33/32

CPC classification number: H01L33/32 ,  H01L33/06

Abstract: A semiconductor device includes an underlying layer, and a light emitting layer which is formed on the underlying layer and in which a barrier layer made of InAlGaN and a quantum well layer made of InGaN are alternately stacked.

Abstract translation: 半导体器件包括下层，并且形成在下层上并且其中由InAlGaN制成的势垒层和由InGaN制成的量子阱层的发光层交替堆叠。

公开(公告)号：US20100172388A1

公开(公告)日：2010-07-08

申请号：US12299186

申请日：2008-09-04

Applicant: Jongil Hwang ,  Shinji Saito ,  Shinya Nunoue

Inventor： Jongil Hwang ,  Shinji Saito ,  Shinya Nunoue

IPC: H01S5/02

CPC classification number: H01S5/0228 ,  F21K9/61 ,  F21Y2115/10 ,  H01S5/005 ,  H01S5/22 ,  H01S5/4056

Abstract: A light emitting device includes: a semiconductor laser element having a first emission face for emitting laser light; a light guiding body buried in the concave portion of the supporting base, guiding the laser light emitted from the semiconductor laser element, and having an incident face to which the laser light enters, and a second emission face from which the laser light traveling through the light guiding body is emitted, the incident face of the light guiding body being such a curved face that an incident angle of the laser light is within a predetermined range including the Brewster angle in a plane formed by a traveling direction of the laser light and a short axis of a light emitting spot of the laser light; and a fluorescent substance scattered in the light guiding body, absorbing the laser light, and emitting the light having a different wavelength from a wavelength of the laser light.

Abstract translation: 一种发光器件包括：具有用于发射激光的第一发射面的半导体激光元件; 导光体，其被埋置在所述支撑基部的凹部中，引导从所述半导体激光元件发射的激光，并且具有入射面入射到所述入射面;以及第二射出面， 导光体发射，导光体的入射面为激光的入射角在由激光的行进方向形成的平面内的布鲁斯特角度的预定范围内的曲面， 激光发光点的短轴; 以及散射在导光体中的荧光体，吸收激光，并且发射具有与激光波长不同的波长的光。

公开(公告)号：US20090321771A1

公开(公告)日：2009-12-31

申请号：US12493585

申请日：2009-06-29

Applicant: Yasushi Hattori ,  Shinji Saito ,  Ryosuke Hiramatsu ,  Shinya Nunoue ,  Iwao Mitsuishi ,  Naotoshi Matsuda

Inventor： Yasushi Hattori ,  Shinji Saito ,  Ryosuke Hiramatsu ,  Shinya Nunoue ,  Iwao Mitsuishi ,  Naotoshi Matsuda

IPC: H01L33/00

CPC classification number: H01S5/02292 ,  G02F1/353 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01S5/32341 ,  H01S5/327 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting element emitting light in a region ranging from ultraviolet to visible, and a visible-light luminescent element absorbing light emitted from the semiconductor light-emitting element and outputting visible light. The visible-light luminescent element includes a substrate, a light-reflecting layer formed on the substrate and containing light scattering particles, and a luminescent layer containing phosphor particles. The luminescent layer absorbs light emitted from the semiconductor light-emitting element and output visible light. The luminescent layer further absorbs light that is emitted from the semiconductor light-emitting element, arrives at and is reflected from the light scattering particles, and output the visible light.

Abstract translation: 半导体发光装置包括从紫外到可见光区域发光的半导体发光元件和吸收从半导体发光元件发出的光并输出可见光的可见光发光元件。 可见光发光元件包括基板，形成在基板上并含有光散射粒子的光反射层和含有荧光体粒子的发光层。 发光层吸收从半导体发光元件发射的光并输出可见光。 发光层进一步吸收从半导体发光元件发射的光，到达并被光散射粒子反射，并输出可见光。

公开(公告)号：US20080194050A1

公开(公告)日：2008-08-14

申请号：US12098309

申请日：2008-04-04

Applicant: Shinji SAITO ,  Shinya Nunoue

Inventor： Shinji SAITO ,  Shinya Nunoue

IPC: H01L33/00

CPC classification number: H01L33/385 ,  H01L33/20 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor light-emitting element has a laminated section which has an active layer made of a semiconductor, and first and second clad layers each being disposed to sandwich the active layer and made of a semiconductor, a pair of first high-reflection layers each being disposed to sandwich the active layer in a first direction orthogonal to the laminated direction of the laminated section, and a low-reflection layer and a second high-reflection layer each being disposed to sandwich the active layer in a second direction orthogonal to the laminated direction and crossing to the first direction.

Abstract translation: 半导体发光元件具有层叠部，该层叠部具有由半导体构成的有源层，第一和第二包层各自设置为夹持有源层并由半导体构成，一对第一高反射层为 被配置成沿着与所述层叠部的层叠方向正交的第一方向夹持所述有源层，以及低反射层和第二高反射层，各自设置成沿与所述层叠方向正交的第二方向夹持所述有源层 并跨越第一个方向。