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公开(公告)号：US08525195B2
公开(公告)日：2013-09-03
申请号：US12873662
申请日：2010-09-01
IPC分类号： H01L33/02
CPC分类号： H01L33/12 , B82Y20/00 , H01L33/04 , H01L33/32 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers, a light emitting portion, a multilayered structural body, and an n-side intermediate layer. The light emitting portion is provided between the semiconductor layers. The light emitting portion includes barrier layers containing GaN, and a well layer provided between the barrier layers. The well layer contains Inx1Ga1-x1N. The body is provided between the n-type semiconductor layer and the light emitting portion. The body includes: first layers containing GaN, and a second layer provided between the first layers. The second layer contains Inx2Ga1-x2N. Second In composition ratio x2 is not less than 0.6 times of first In composition ratio x1 and is lower than the first In composition x1. The intermediate layer is provided between the body and the light emitting portion and includes a third layer containing Aly1Ga1-y1N (0
摘要翻译： 根据一个实施例，半导体发光器件包括n型和p型半导体层，发光部分，多层结构体和n侧中间层。 发光部分设置在半导体层之间。 发光部分包括含有GaN的阻挡层，以及设置在阻挡层之间的阱层。 阱层包含Inx1Ga1-x1N。 本体设置在n型半导体层和发光部之间。 主体包括：包含GaN的第一层，以及设置在第一层之间的第二层。 第二层包含Inx2Ga1-x2N。 第二组成比x2不小于第一In组成比x1的0.6倍，并且低于第一In组成x1。 中间层设置在主体和发光部分之间，并且包括含有Aly1Ga1-y1N（0
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公开(公告)号：US20120012814A1
公开(公告)日：2012-01-19
申请号：US13035304
申请日：2011-02-25
申请人： Yoshiyuki HARADA , Toshiki Hikosaka , Tomonari Shioda , Koichi Tachibana , Hajime Nago , Shinya Nunoue
发明人： Yoshiyuki HARADA , Toshiki Hikosaka , Tomonari Shioda , Koichi Tachibana , Hajime Nago , Shinya Nunoue
CPC分类号： H01L33/08 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/06
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part provided therebetween. The light emitting part includes a plurality of light emitting layers. Each of the light emitting layers includes a well layer region and a non-well layer region which is juxtaposed with the well layer region in a plane perpendicular to a first direction from the n-type semiconductor layer towards the p-type semiconductor layer. Each of the well layer regions has a common An In composition ratio. Each of the well layer regions includes a portion having a width in a direction perpendicular to the first direction of 50 nanometers or more.
摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和设置在其间的发光部分。 发光部分包括多个发光层。 每个发光层包括在垂直于从n型半导体层朝向p型半导体层的第一方向的平面中与阱层区域并置的阱层区域和非阱层区域。 每个阱层区域具有常见的An In组成比。 每个阱层区域包括在垂直于第一方向的方向上具有50纳米或更大的宽度的部分。
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3.发明授权Nitride semiconductor device and nitride semiconductor layer growth substrate 有权氮化物半导体器件和氮化物半导体层生长衬底公开(公告)号：US08564006B2
公开(公告)日：2013-10-22
申请号：US13405985
申请日：2012-02-27
申请人： Koichi Tachibana , Hisashi Yoshida , Hiroshi Ono , Hajime Nago , Yoshiyuki Harada , Toshiki Hikosaka , Maki Sugai , Toshiyuki Oka , Shinya Nunoue
发明人： Koichi Tachibana , Hisashi Yoshida , Hiroshi Ono , Hajime Nago , Yoshiyuki Harada , Toshiki Hikosaka , Maki Sugai , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L29/045 , H01L29/2003 , H01L33/16 , H01L33/32
摘要： According to one embodiment, a nitride semiconductor device includes a substrate and a semiconductor functional layer. The substrate is a single crystal. The semiconductor functional layer is provided on a major surface of the substrate and includes a nitride semiconductor. The substrate includes a plurality of structural bodies disposed in the major surface. Each of the plurality of structural bodies is a protrusion provided on the major surface or a recess provided on the major surface. An absolute value of an angle between a nearest direction of an arrangement of the plurality of structural bodies and a nearest direction of a crystal lattice of the substrate in a plane parallel to the major surface is not less than 1 degree and not more than 10 degrees.
摘要翻译： 根据一个实施例，氮化物半导体器件包括衬底和半导体功能层。 衬底是单晶。 半导体功能层设置在基板的主表面上并且包括氮化物半导体。 基板包括设置在主表面中的多个结构体。 多个结构体中的每一个是设置在主表面上的突起或设置在主表面上的凹部。 多个结构体的排列的最近方向与平行于主表面的平面中的基板的晶格的最近方向之间的角度的绝对值不小于1度且不大于10度 。
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公开(公告)号：US08525203B2
公开(公告)日：2013-09-03
申请号：US12874510
申请日：2010-09-02
IPC分类号： H01L33/00
CPC分类号： H01L33/145 , B82Y20/00 , H01L33/06 , H01L33/32 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting portion, a first layer, a second layer, and an intermediate layer. The semiconductor layers include nitride semiconductor. The light emitting portion is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a quantum well layer. The first layer is provided between the light emitting portion and the p-type semiconductor layer and includes AlX1Ga1-x1N having first Al composition ratio x1. The second layer is provided between the first layer and the p-type semiconductor layer and includes Alx2Ga1-x2N having second Al composition ratio x2 higher than the first Al composition ratio x1. The intermediate layer is provided between the first layer and the light emitting portion and has a thickness not smaller than 3 nanometers and not larger than 8 nanometers and includes Inz1Ga1-z1N (0≦z1
摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，发光部分，第一层，第二层和中间层。 半导体层包括氮化物半导体。 发光部分设置在n型半导体层和p型半导体层之间，并且包括量子阱层。 第一层设置在发光部和p型半导体层之间，并且包括具有第一Al组成比x1的AlX1Ga1-x1N。 第二层设置在第一层和p型半导体层之间，并且包括具有比第一Al组成比x1高的第二Al组成比x2的Al x2 Ga1-x2N。 中间层设置在第一层和发光部之间，并且具有不小于3纳米且不大于8纳米的厚度，并且包括Inz1Ga1-z1N（0 @ z1 <1）。
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公开(公告)号：US20120049155A1
公开(公告)日：2012-03-01
申请号：US13030440
申请日：2011-02-18
IPC分类号： H01L33/04
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting part, and a multilayered structural body. The light emitting part is provided between the first and second semiconductor layers and includes barrier layers and well layers alternately stacked. The multilayered structural body is provided between the first semiconductor layer and the light emitting part and includes high energy layers and low energy layers alternately stacked. An average In composition ratio on a side of the second semiconductor is higher than that on a side of the first semiconductor in the multilayered structural body. An average In composition ratio on a side of the second semiconductor is higher than that on a side of the first semiconductor in the light emitting part.
摘要翻译： 根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层，发光部分和多层结构体。 发光部分设置在第一和第二半导体层之间，并且包括交替层叠的势垒层和阱层。 多层结构体设置在第一半导体层和发光部之间，并且包含交替堆叠的高能层和低能层。 第二半导体侧的平均In组成比高于多层结构体中的第一半导体侧的平均In组成比。 第二半导体侧的平均In组成比高于发光部中的第一半导体侧的平均In组成比。
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公开(公告)号：US20110198633A1
公开(公告)日：2011-08-18
申请号：US12871285
申请日：2010-08-30
IPC分类号： H01L33/34
CPC分类号： H01L33/06 , H01L33/32 , H01L33/325
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting portion. The light emitting portion is provided between the semiconductor layers and includes barrier layers and well layers alternately stacked. An n-side end well layer which is closest to the n-type semiconductor layer contains InwnGa1-wnN and has a layer thickness twn. An n-side end barrier layer which is closest to the n-type semiconductor layer contains InbnGa1-bnN and has a layer thickness tbn. A p-side end well layer which is closest to the p-type semiconductor layer contains InwpGa1-wpN and has a layer thickness twp. A p-side end barrier layer which is closest to the p-type semiconductor contains InbpGa1-bpN and has a layer thickness tbp. A value of (wp×twp+bp×tbp)/(twp+tbp) is higher than (wn×twn+bn×tbn)/(twn+tbn) and is not higher than 5 times (wn×twn+bn×tbn)/(twn+tbn).
摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光部分。 发光部分设置在半导体层之间，并且包括交替堆叠的势垒层和阱层。 最靠近n型半导体层的n侧端阱层包含InwnGa1-wnN并具有层厚度twn。 最靠近n型半导体层的n侧端势垒层包含InbnGa1-bnN并具有层厚度tbn。 最靠近p型半导体层的p侧端阱层包含InwpGa1-wpN，并具有层厚度twp。 最靠近p型半导体的p侧端势垒层包含InbpGa1-bpN，并具有层厚度tbp。 （wp×twp + bp×tbp）/（twp + tbp）的值高于（wn×twn + bn×tbn）/（twn + tbn），并且不高于5次（wn×twn + bn× tbn）/（twn + tbn）。
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公开(公告)号：US20110198583A1
公开(公告)日：2011-08-18
申请号：US12873662
申请日：2010-09-01
CPC分类号： H01L33/12 , B82Y20/00 , H01L33/04 , H01L33/32 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers, a light emitting portion, a multilayered structural body, and an n-side intermediate layer. The light emitting portion is provided between the semiconductor layers. The light emitting portion includes barrier layers containing GaN, and a well layer provided between the barrier layers. The well layer contains Inx1Ga1-x1N. The body is provided between the n-type semiconductor layer and the light emitting portion. The body includes: first layers containing GaN, and a second layer provided between the first layers. The second layer contains Inx2Ga1-x2N. Second In composition ratio x2 is not less than 0.6 times of first In composition ratio x1 and is lower than the first In composition x1. The intermediate layer is provided between the body and the light emitting portion and includes a third layer containing Aly1Ga1-y1N (0
摘要翻译： 根据一个实施例，半导体发光器件包括n型和p型半导体层，发光部分，多层结构体和n侧中间层。 发光部分设置在半导体层之间。 发光部分包括含有GaN的阻挡层，以及设置在阻挡层之间的阱层。 阱层包含Inx1Ga1-x1N。 本体设置在n型半导体层和发光部之间。 主体包括：包含GaN的第一层，以及设置在第一层之间的第二层。 第二层包含Inx2Ga1-x2N。 第二组成比x2不小于第一In组成比x1的0.6倍，并且低于第一In组成x1。 中间层设置在主体和发光部分之间，并且包括含有Aly1Ga1-y1N（0
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公开(公告)号：US08680508B2
公开(公告)日：2014-03-25
申请号：US13222500
申请日：2011-08-31
申请人： Toshiki Hikosaka , Koichi Tachibana , Hajime Nago , Shinya Nunoue
发明人： Toshiki Hikosaka , Koichi Tachibana , Hajime Nago , Shinya Nunoue
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/0075 , H01L33/32 , H01S5/305 , H01S5/3407 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type layer, a p-type layer, and a light emitting unit provided between the n-type layer and the p-type layer and including barrier layers and well layers. At least one of the barrier layers includes first and second portion layers. The first portion layer is disposed on a side of the n-type layer. The second portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the first portion layer. At least one of the well layers includes third and fourth portion layers. The third portion layer is disposed on a side of the n-type layer. The fourth portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the third portion layer.
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公开(公告)号：US08674338B2
公开(公告)日：2014-03-18
申请号：US12871285
申请日：2010-08-30
CPC分类号： H01L33/06 , H01L33/32 , H01L33/325
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting portion. The light emitting portion is provided between the semiconductor layers and includes barrier layers and well layers alternately stacked. An n-side end well layer which is closest to the n-type semiconductor layer contains InwnGa1-wnN and has a layer thickness twn. An n-side end barrier layer which is closest to the n-type semiconductor layer contains InbnGa1-bnN and has a layer thickness tbn. A p-side end well layer which is closest to the p-type semiconductor layer contains InwpGa1-wpN and has a layer thickness twp. A p-side end barrier layer which is closest to the p-type semiconductor contains InbpGa1-bpN and has a layer thickness tbp. A value of (wp×twp+bp×tbp)/(twp+tbp) is higher than (wn×twn+bn×tbn)/(twn+tbn) and is not higher than 5 times (wn×twn+bn×tbn)/(twn+tbn).
摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光部分。 发光部分设置在半导体层之间，并且包括交替堆叠的势垒层和阱层。 最靠近n型半导体层的n侧端阱层包含InwnGa1-wnN并具有层厚度twn。 最靠近n型半导体层的n侧端势垒层包含InbnGa1-bnN并具有层厚度tbn。 最靠近p型半导体层的p侧端阱层包含InwpGa1-wpN，并具有层厚度twp。 最靠近p型半导体的p侧端势垒层包含InbpGa1-bpN，并具有层厚度tbp。 （wp×twp + bp×tbp）/（twp + tbp）的值高于（wn×twn + bn×tbn）/（twn + tbn），并且不高于5次（wn×twn + bn× tbn）/（twn + tbn）。
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公开(公告)号：US08658450B2
公开(公告)日：2014-02-25
申请号：US12875560
申请日：2010-09-03
申请人： Hajime Nago , Koichi Tachibana , Toshiki Hikosaka , Shinya Nunoue
发明人： Hajime Nago , Koichi Tachibana , Toshiki Hikosaka , Shinya Nunoue
CPC分类号： H01L33/24 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/06 , H01L33/12 , H01L33/16 , H01L33/20 , H01L33/32
摘要： According to one embodiment, a crystal growth method is disclosed for growing a crystal of a nitride semiconductor on a major surface of a substrate. The major surface is provided with asperities. The method can include depositing a buffer layer on the major surface at a rate of not more than 0.1 micrometers per hour. The buffer layer includes GaxAl1-xN (0.1≦x
摘要翻译： 根据一个实施例，公开了用于在衬底的主表面上生长氮化物半导体的晶体的晶体生长方法。 主表面配有凹凸。 该方法可以包括以不大于0.1微米/小时的速率在主表面上沉积缓冲层。 缓冲层包括GaxAl1-xN（0.1×x <0.5），其厚度不小于20纳米，不大于50纳米。 此外，该方法可以包括在沉积缓冲层时在高于衬底的温度的温度下在缓冲层上生长包括氮化物半导体的晶体。
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