公开(公告)号：US20140339539A1

公开(公告)日：2014-11-20

申请号：US14272759

申请日：2014-05-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiroyuki MIYAKE ,  Kenichi OKAZAKI ,  Masahiko HAYAKAWA ,  Shinpei MATSUDA

IPC: H01L29/786

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/4908 ,  H01L29/7869

Abstract: A semiconductor device including a transistor having excellent electrical characteristics is provided. Alternatively, a semiconductor device having a high aperture ratio and including a capacitor capable of increasing capacitance is provided. The semiconductor device includes a gate electrode, an oxide semiconductor film overlapping the gate electrode, an oxide insulating film in contact with the oxide semiconductor film, a first oxygen barrier film between the gate electrode and the oxide semiconductor film, and a second oxygen barrier film in contact with the first oxygen barrier film. The oxide semiconductor film and the oxide insulating film are provided on an inner side of the first oxygen barrier film and the second oxygen barrier film.

Abstract translation: 提供了包括具有优异电特性的晶体管的半导体器件。 或者，提供具有高开口率并且包括能够增加电容的电容器的半导体器件。 半导体器件包括栅电极，与栅电极重叠的氧化物半导体膜，与氧化物半导体膜接触的氧化物绝缘膜，栅电极和氧化物半导体膜之间的第一氧阻隔膜，以及第二氧阻隔膜 与第一氧阻隔膜接触。 氧化物半导体膜和氧化物绝缘膜设置在第一氧阻隔膜和第二氧阻隔膜的内侧。

公开(公告)号：US20140293183A1

公开(公告)日：2014-10-02

申请号：US14244440

申请日：2014-04-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hiroyuki MIYAKE ,  Hideaki KUWABARA ,  Tatsuya TAKAHASHI

IPC: H01L27/12 ,  G02F1/1368

CPC classification number: H01L27/1225 ,  G02F1/1368 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/45 ,  H01L29/78645

Abstract: An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.

Abstract translation: 半导体器件的开口率提高。 驱动电路和像素设置在一个基板上，驱动电路中的第一薄膜晶体管和像素中的第二薄膜晶体管均包括栅极电极层，栅电极层上的栅极绝缘层，氧化物 栅极绝缘层上的半导体层，氧化物半导体层上的源极和漏极层以及与栅极绝缘层，氧化物半导体层以及源极和漏极上的部分氧化物半导体层接触的氧化物绝缘层 层。 栅极电极层，栅极绝缘层，氧化物半导体层，源极和漏极电极层以及第二薄膜晶体管的氧化物绝缘层各自具有透光性。

公开(公告)号：US20140104262A1

公开(公告)日：2014-04-17

申请号：US14049300

申请日：2013-10-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroyuki MIYAKE ,  Hideaki Shishido ,  Seiko Inoue

IPC: G09G3/36

CPC classification number: G09G3/3696 ,  G02F1/1368 ,  G09G3/3614 ,  G09G3/3648 ,  G09G3/3688 ,  G09G2320/0219

Abstract: In a video voltage comparator circuit, an average of first video voltages applied to pixel electrodes of pixels in the second-half rows in a k-th frame period (k is a natural number) is compared with an average of second video voltages applied to pixel electrodes of pixels in the first-half rows in a (k+1)th frame period for each row. In an overdrive voltage switching circuit, when a difference obtained from the comparison in the video voltage comparator circuit is greater than or equal to a threshold value, the overdrive voltage in the (k+1)th frame period is switched to a first overdrive voltage, and when the difference obtained from the comparison in the video voltage comparator circuit is less than the threshold value, the overdrive voltage in the (k+1)th frame period is switched to a second overdrive voltage lower than the first overdrive voltage.

Abstract translation: 在视频电压比较器电路中，将施加到第k帧周期（k为自然数）的后半行像素的像素电极的第一视频电压的平均值与施加到 在每行的第（k + 1）帧周期中的前半行中的像素的像素电极。 在过驱动电压切换电路中，当从视频电压比较器电路的比较得到的差大于或等于阈值时，将第（k + 1）帧周期中的过驱动电压切换为第一过驱动电压 ，并且当从视频电压比较器电路中的比较得到的差小于阈值时，将第（k + 1）帧周期中的过驱动电压切换到低于第一过驱动电压的第二过驱动电压。

公开(公告)号：US20140015868A1

公开(公告)日：2014-01-16

申请号：US13940788

申请日：2013-07-12

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Yoshiharu HIRAKATA ,  Hiroyuki MIYAKE

IPC: G09G3/36

CPC classification number: G09G3/3614 ,  G02F2001/13793 ,  G09G3/3648 ,  G09G2310/0205 ,  G09G2310/0218 ,  G09G2310/0235

Abstract: A liquid crystal display device capable of consuming less power and a method for driving the liquid crystal display device are provided. The liquid crystal display device includes a pixel portion, a light supply portion sequentially supplying lights of a plurality of hues to the pixel portion, a counter counting the number of frame periods, a signal generator determining timing of inverting the polarity of an image signal every plural consecutive frame periods by using data on the number of frame periods counted by the counter, and a controller inverting the polarity of the image signal in accordance with the timing. A plurality of pixels are provided in the pixel portion. The image signal whose polarity is inverted every plural frame periods is input to the plurality of pixels.

Abstract translation: 提供能够消耗较少功率的液晶显示装置和驱动液晶显示装置的方法。 液晶显示装置包括：像素部，向像素部顺序地供给多种色调的光的供光部，对帧周期数进行计数的计数器;确定每次图像信号的极性反转的定时 通过使用由计数器计数的帧周期数的数据和控制器根据定时反转图像信号的极性的多个连续帧周期。 像素部中设置有多个像素。 将极性在每个帧周期反转的图像信号输入到多个像素。

公开(公告)号：US20130093025A1

公开(公告)日：2013-04-18

申请号：US13709377

申请日：2012-12-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki MIYAKE ,  Kei Takahashi

IPC: H01L27/088

CPC classification number: H03K17/162 ,  G09G3/3648 ,  G09G3/3677 ,  G09G2300/0408 ,  G09G2300/0819 ,  G09G2310/0286 ,  G09G2310/0289 ,  G09G2320/043 ,  G09G2320/045 ,  G11C19/28 ,  G11C19/285 ,  H01L27/088 ,  H01L27/1288 ,  H01L29/04 ,  H01L29/78696 ,  H03K17/687

Abstract: An object of the present invention is to suppress deterioration in the thin film transistor. A plurality of pulse output circuits each include first to eleventh thin film transistors is formed. The pulse output circuit is operated on the basis of a plurality of clock signals which control each transistor, the previous stage signal input from a pulse output circuit in the previous stage, the next stage signal input from a pulse output circuit in the next stage, and a reset signal. In addition, a microcrystalline semiconductor is used for a semiconductor layer serving as a channel region of each transistor. Therefore, degradation of characteristics of the transistor can be suppressed.

公开(公告)号：US20250046799A1

公开(公告)日：2025-02-06

申请号：US18826241

申请日：2024-09-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroyuki MIYAKE ,  Nobuhiro INOUE ,  Ryo YAMAUCHI ,  Mako MOTOYOSHI ,  Takahiro KAWAKAMI ,  Mayumi MIKAMI ,  Miku FUJITA ,  Shunpei YAMAZAKI

IPC: H01M4/36 ,  H01G11/06 ,  H01G11/28 ,  H01G11/30 ,  H01G11/36 ,  H01G11/50 ,  H01M4/134 ,  H01M4/38 ,  H01M4/62 ,  H01M10/0525

Abstract: A power storage device having high capacitance is provided. A power storage device with excellent cycle characteristics is provided. A power storage device with high charge and discharge efficiency is provided. A power storage device including a negative electrode with low resistance is provided. A negative electrode for a power storage device includes a number of composites in particulate forms. The composites include a negative electrode active material, a first functional material, and a compound. The compound includes a constituent element of the negative electrode active material and a constituent element of the first functional material. The negative electrode active material includes a region in contact with at least one of the first functional material or the compound.

公开(公告)号：US20240355829A1

公开(公告)日：2024-10-24

申请号：US18759363

申请日：2024-06-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kei TAKAHASHI ,  Hiroyuki MIYAKE

IPC: H01L27/12 ,  G09G3/3225 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3275 ,  G11C19/28

CPC classification number: H01L27/1225 ,  G09G3/3225 ,  G09G3/3233 ,  G09G3/3266 ,  H01L27/1222 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/1262 ,  G09G3/3275 ,  G09G2300/0426 ,  G09G2300/0465 ,  G09G2310/0286 ,  G09G2310/0291 ,  G09G2310/08 ,  G09G2330/023 ,  G09G2354/00 ,  G11C19/28

Abstract: A display device including a display portion with an extremely high resolution is provided. The display device includes a pixel circuit and a light-emitting element. The pixel circuit includes a first element layer including a first transistor and a second element layer including a second transistor. A channel formation region of the first transistor includes silicon. The first transistor has a function of driving the light-emitting element. The second transistor functions as a switch. A channel formation region of the second transistor includes a metal oxide. The metal oxide functions as a semiconductor. The second element layer is provided over the first element layer.

公开(公告)号：US20240049555A1

公开(公告)日：2024-02-08

申请号：US18376464

申请日：2023-10-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yoshiharu HIRAKATA ,  Hiroyuki MIYAKE

IPC: H10K59/40 ,  G06F3/041 ,  G06F1/16 ,  G06F3/044

CPC classification number: H10K59/40 ,  G06F3/0412 ,  G06F1/1652 ,  G06F3/04164 ,  G06F3/04184 ,  G06F3/0445 ,  G06F3/0446 ,  G06F3/0447 ,  G06F2203/04102 ,  G06F2203/04103 ,  H10K10/88

Abstract: A flexible touch panel is provided. Both reduction in thickness and high sensitivity of a touch panel are achieved. The touch panel includes a first flexible substrate, a first insulating layer over the first substrate, a transistor and a light-emitting element over the first insulating layer, a color filter over the light-emitting element, a pair of sensor electrodes over the color filter, a second insulating layer over the sensor electrodes, a second flexible substrate over the second insulating layer, and a protective layer over the second substrate. A first bonding layer is between the light-emitting element and the color filter. The thickness of the first substrate and the second substrate is each 1 μm to 200 μm inclusive. The first bonding layer includes a region with a thickness of 50 nm to 10 μm inclusive.

公开(公告)号：US20230393688A1

公开(公告)日：2023-12-07

申请号：US18237078

申请日：2023-08-23

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroyuki MIYAKE

IPC: G06F3/041 ,  G06F3/044

CPC classification number: G06F3/04166 ,  G06F3/0412 ,  G06F3/04164 ,  G06F3/0443 ,  G06F3/0446 ,  G06F3/0448 ,  G06F2203/04112

Abstract: A touch panel with higher sensing accuracy or higher detection sensitivity is provided. The touch panel includes a first conductive layer, a second conductive layer, a plurality of display elements, and a scan line. In a plan view, the first conductive layer has an outline including a first portion that is linear and parallel to a first direction. In the plan view, the second conductive layer has an outline including a second portion that is linear and parallel to the first direction. The first portion and the second portion face each other. The display element is in a position not overlapping with the first conductive layer nor the second conductive layer. The scan line has a portion extending in a second direction. An angle between the first direction and the second direction is greater than or equal to 300 and less than or equal to 60°.

公开(公告)号：US20230252952A1

公开(公告)日：2023-08-10

申请号：US18137259

申请日：2023-04-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroyuki MIYAKE

IPC: G09G3/36 ,  G11C19/28

CPC classification number: G09G3/3677 ,  G11C19/28 ,  G11C19/287 ,  G09G2300/0814 ,  G09G2310/08 ,  G09G2310/06 ,  G09G2320/0223 ,  G02F1/134336

Abstract: A scan line to which a selection signal or a non-selection signal is input from its end, and a transistor in which a clock signal is input to a gate, the non-selection signal input to a source, and a drain is connected to the scan line are provided. A signal input to the end of the scan line is switched from the selection signal to the non-selection signal at the same or substantially the same time as the transistor is turned on. The non-selection signal is input not only from one end but also from both ends of the scan line. This makes it possible to inhibit the potentials of portions in the scan line from being changed at different times.