公开(公告)号：US06890233B2

公开(公告)日：2005-05-10

申请号：US10414573

申请日：2003-04-15

Applicant: David S. Y. Hsu

Inventor： David S. Y. Hsu

IPC: H01J1/30 ,  H01J1/304 ,  H01J1/316 ,  H01J1/62 ,  H01J3/02 ,  H01J9/00 ,  H01J9/02 ,  H01J19/24 ,  H01J63/04 ,  H01L20060101

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  H01J1/304 ,  H01J1/3046 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2201/319

Abstract: A field emitter cell includes a thin-film-edge emitter normal to the gate layer. The field emitter cell may include a conductive substrate layer, an insulator layer having a perforation, a gate layer having a perforation, an emitter layer, and other optional layers. The perforation in the gate layer is larger and concentrically offset with respect to the perforation in the insulating layer and may be of a tapered construction. Alternatively, the perforation in the gate layer may be coincident with, or larger or smaller than, the perforation in the insulating layer, provided that the gate layer is shielded from the emitter from a direct line-of-sight by a nonconducting standoff layer. Optionally, the thin-film-edge emitter may include incorporated nanofilaments. The field emitter cell has low gate current making it useful for various applications such as field emitter displays, high voltage power switching, microwave, RF amplification and other application that require high emission currents.

Abstract translation: 场发射极单元包括垂直于栅极层的薄膜边缘发射极。 场致发射单元可以包括导电基底层，具有穿孔的绝缘体层，具有穿孔的栅极层，发射极层和其它可选层。 栅极层中的穿孔相对于绝缘层中的穿孔更大并且同心地偏移，并且可以是锥形结构。 或者，栅极层中的穿孔可以与绝缘层中的穿孔重合或更大或更小，只要栅极层通过非导电间隔层从发射器与直接视线屏蔽。 任选地，薄膜边缘发射器可以包括并入的纳米丝。 场发射极电池具有较低的栅极电流，可用于需要高发射电流的各种应用，如场致发射显示器，高压电源开关，微波，射频放大和其他应用。

公开(公告)号：US06750616B2

公开(公告)日：2004-06-15

申请号：US10194145

申请日：2002-07-11

Applicant: Ga-Lane Chen

Inventor： Ga-Lane Chen

IPC: G09G3900

CPC classification number: H01J1/3044 ,  H01J31/127 ,  H01J2201/319

Abstract: A field emission display device (1) includes a cathode plate (20), a resistive buffer (30) in contact with the cathode plate, a plurality of electron emitters (40) formed on the buffer and an anode plate (50) spaced from the buffer. Each electron emitter includes a rod-shaped first part (401) and a conical second part (402). The buffer and first parts are made from silicon oxide (SiOx). The combined buffer and first parts has a gradient distribution of electrical resistivity such that highest electrical resistivity is nearest the cathode plate and lowest electrical resistivity is nearest the anode plate. The second parts are made from molybdenum. When emitting voltage is applied between the cathode and anode plates, electrons emitted from the second parts traverse an interspace region and are received by the anode plate. Because of the gradient distribution of electrical resistivity, only a very low emitting voltage is needed.

Abstract translation: 场发射显示装置（1）包括阴极板（20），与阴极板接触的电阻缓冲器（30），形成在缓冲器上的多个电子发射器（40）和与间隔开的阳极板 缓冲区。 每个电子发射器包括棒状的第一部分（401）和圆锥形的第二部分（402）。 缓冲器和第一部分由氧化硅（SiOx）制成。 组合缓冲器和第一部件具有电阻率的梯度分布，使得最高电阻率最接近阴极板，最低电阻率最接近阳极板。 第二部分由钼制成。 当在阴极板和阳极板之间施加发射电压时，从第二部分发射的电子穿过空间区域并被阳极板接收。 由于电阻率的梯度分布，只需要非常低的发射电压。

公开(公告)号：US20040108804A1

公开(公告)日：2004-06-10

申请号：US10414573

申请日：2003-04-15

Inventor： David S.Y. Hsu

IPC: H01J001/62 ,  H01J063/04

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  H01J1/304 ,  H01J1/3046 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2201/319

Abstract: A field emitter cell includes a thin-film-edge emitter normal to the gate layer. The field emitter cell may include a conductive substrate layer, an insulator layer having a perforation, a gate layer having a perforation, an emitter layer, and other optional layers. The perforation in the gate layer is larger and concentrically offset with respect to the perforation in the insulating layer and may be of a tapered construction. Alternatively, the perforation in the gate layer may be coincident with, or larger or smaller than, the perforation in the insulating layer, provided that the gate layer is shielded from the emitter from a direct line-of-sight by a nonconducting standoff layer. Optionally, the thin-film-edge emitter may include incorporated nanofilaments. The field emitter cell has low gate current making it useful for various applications such as field emitter displays, high voltage power switching, microwave, RF amplification and other applications that require high emission currents.

Abstract translation: 场发射极单元包括垂直于栅极层的薄膜边缘发射极。 场致发射单元可以包括导电基底层，具有穿孔的绝缘体层，具有穿孔的栅极层，发射极层和其它可选层。 栅极层中的穿孔相对于绝缘层中的穿孔更大并且同心地偏移，并且可以是锥形结构。 或者，栅极层中的穿孔可以与绝缘层中的穿孔重合或更大或更小，只要栅极层通过非导电间隔层从发射器与直接视线屏蔽。 任选地，薄膜边缘发射器可以包括并入的纳米丝。 场致发射极具有较低的栅极电流，可用于各种应用场合，如场致发射显示器，高压功率开关，微波，射频放大和其他需要高发射电流的应用。

公开(公告)号：US20040072494A1

公开(公告)日：2004-04-15

申请号：US10681288

申请日：2003-10-09

Inventor： Masayuki Nakamoto

IPC: H01J009/24 ,  H01J001/62

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30469 ,  H01J2201/319 ,  Y10S977/734 ,  Y10S977/742 ,  Y10S977/842 ,  Y10S977/939 ,  Y10T428/30 ,  Y10T428/31678

Abstract: A field emission type cold cathode device comprises a substrate, and a metal plating layer formed on the substrate, the metal plating layer contains at least one carbon structure selected from a group of fullerenes and carbon nanotubes, the carbon structure is stuck out from the metal plating layer and a part of the carbon structure is buried in the metal plating layer.

公开(公告)号：US20040046491A1

公开(公告)日：2004-03-11

申请号：US10622909

申请日：2003-07-21

Inventor： Arthur Piehl

IPC: H01J001/62 ,  H01J009/00

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/319

Abstract: An enhanced Spindt-tip field emitter tip and a method for producing the enhanced Spindt-tip field emitter. A thin-film resistive heating element is positioned below the field emitter tip to allow for resistive heating of the tip in order to sharpen the tip and to remove adsorbed contaminants from the surface of the tip. Metal layers of the enhanced field emission device are separated by relatively thick dielectric bilayers, with the metal layers having increased thickness in the proximity of a cylindrical well in which the field emitter tip is deposited. Dielectric material is pulled back from the cylindrical aperture into which the field emitter tip is deposited in order to decrease buildup of conductive contaminants and the possibility of short circuits between metallic layers.

公开(公告)号：US20040007963A1

公开(公告)日：2004-01-15

申请号：US10194682

申请日：2002-07-12

Inventor： Ga-Lane Chen

IPC: H01J001/62

CPC classification number: H01J1/3044 ,  H01J31/127 ,  H01J2201/319 ,  Y10S977/952

Abstract: A field emission display device (1) includes a cathode plate (20), a resistive buffer (30) in contact with the cathode plate, a plurality of electron emitters (40) formed on the buffer, and an anode plate (50) spaced from the electron emitters. Each electron emitter includes a rod-shaped first part (401) and a conical second part (402). The buffer and first parts are made from silicon nitride. The combined buffer and first parts has a gradient distribution of electrical resistivity such that highest electrical resistivity is nearest the cathode plate and lowest electrical resistivity is nearest the anode plate. The second parts are made from niobium. When emitting voltage is applied between the cathode and anode plates, electrons emitted from the electron emitters traverse an interspace region and are received by the anode plate. Because of the gradient distribution of electrical resistivity, only a very low emitting voltage is needed.

Abstract translation: 场发射显示装置（1）包括阴极板（20），与阴极板接触的电阻缓冲器（30），形成在缓冲器上的多个电子发射器（40）和间隔开的阳极板 从电子发射器。 每个电子发射器包括棒状的第一部分（401）和圆锥形的第二部分（402）。 缓冲器和第一部分由氮化硅制成。 组合缓冲器和第一部件具有电阻率的梯度分布，使得最高电阻率最接近阴极板，最低电阻率最接近阳极板。 第二部分由铌制成。 当在阴极和阳极板之间施加发射电压时，从电子发射器发射的电子穿过空间区域并被阳极板接收。 由于电阻率的梯度分布，只需要非常低的发射电压。

公开(公告)号：US06676471B2

公开(公告)日：2004-01-13

申请号：US10077529

申请日：2002-02-14

Applicant: David A. Cathey, Jr. ,  John Lee

Inventor： David A. Cathey, Jr. ,  John Lee

IPC: H01J924

CPC classification number: H01J9/025 ,  H01J29/04 ,  H01J29/06 ,  H01J29/89 ,  H01J31/127 ,  H01J2201/319

Abstract: A method for fabricating a field emission display (FED) with improved junction leakage characteristics is provided. The method includes the formation of a light blocking element between a cathodoluminescent display screen of the FED and semiconductor junctions formed on a baseplate of the FED. The light blocking element protects the junctions from light formed at the display screen and light generated in the environment striking the junctions. Electrical characteristics of the junctions thus remain constant and junction leakage is improved. The light blocking element may be formed as an opaque light absorbing or light reflecting layer. In addition, the light blocking element may be patterned to protect predetermined areas of the baseplate and may provide other circuit functions such as an interconnect layer.

Abstract translation: 提供了一种制造具有改善的结漏电特性的场发射显示（FED）的方法。 该方法包括在FED的阴极发光显示屏和形成在FED的底板上的半导体结之间形成遮光元件。 光阻挡元件保护接点免受在显示屏上形成的光和在环境中产生的光的撞击。 因此，结的电气特性保持恒定，并且提高结漏电。 遮光元件可以形成为不透明的光吸收或光反射层。 此外，遮光元件可以被图案化以保护基板的预定区域并且可以提供诸如互连层的其它电路功能。

公开(公告)号：US06635983B1

公开(公告)日：2003-10-21

申请号：US09388697

申请日：1999-09-02

Applicant: Kanwal K. Raina ,  Benham Moradi

Inventor： Kanwal K. Raina ,  Benham Moradi

IPC: H01J1902

CPC classification number: H01J1/30 ,  H01J1/304 ,  H01J1/3044 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/00

Abstract: Described herein is a resistor layer for use in field emission display devices and the like, and its method of manufacture. The resistor layer is an amorphous silicon layer doped with nitrogen and phosphorus. Nitrogen concentration in the resistor layer is preferably between about 5 and 15 atomic percent. The presence of nitrogen and phosphorus in the silicon prevents diffusion of Si atoms into metal conductive layers such as aluminum, even up to diffusion and packaging temperatures. The nitrogen and phosphorus also prevent defects from forming at the boundary between the resistor layer and metal conductor. This leads to better control over shorting and improved resistivity in the resistor.

Abstract translation: 这里描述的是用于场发射显示装置等的电阻层及其制造方法。 电阻层是掺杂有氮和磷的非晶硅层。 电阻层中的氮浓度优选为约5至15原子％。 硅中的氮和磷的存在防止Si原子扩散到金属导电层如铝中，甚至达到扩散和封装温度。 氮和磷还可以防止在电阻层和金属导体之间的边界处形成缺陷。 这导致更好地控制电阻器的短路和改善电阻率。

公开(公告)号：US06629869B1

公开(公告)日：2003-10-07

申请号：US08474277

申请日：1995-06-07

Applicant: Nalin Kumar ,  Chenggang Xie

Inventor： Nalin Kumar ,  Chenggang Xie

IPC: H01J902

CPC classification number: H01J1/316 ,  G09G3/22 ,  H01J1/304 ,  H01J1/3042 ,  H01J9/027 ,  H01J29/085 ,  H01J31/127 ,  H01J61/0677 ,  H01J63/06 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2329/8625 ,  H01J2329/864 ,  Y10S977/891

Abstract: A field emission cathode is provided which includes a substrate and a conductive layer desposed adjacent the substrate. An electrically resistive pillar is disposed adjacent the conductive layer, the resistive pillar having a substantially flat surface spaced from and substantially parallel to the substrate. A layer of diamond is disposed adjacent the surface of the resistive pillar.

Abstract translation: 提供场发射阴极，其包括衬底和邻近衬底设置的导电层。 电阻柱设置在导电层附近，电阻柱具有与衬底间隔开并基本上平行于衬底的基本平坦的表面。 金刚石层邻近电阻柱的表面设置。

公开(公告)号：US06515407B1

公开(公告)日：2003-02-04

申请号：US09141697

申请日：1998-08-28

Applicant: John M. Macaulay

Inventor： John M. Macaulay

IPC: H01J102

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319

Abstract: A gated filament structure for a field emission display includes a plurality of filaments. Included is a substrate, an insulating layer positioned adjacent to the substrate, and a metal gate layer position adjacent to the insulating layer. The metal gate layer has a plurality of gates, the metal gate layer having an average thickness “s” and a top metal gate layer planar surface that is substantially parallel to a bottom metal gate layer planar surface. The metal gate layer includes a plurality of apertures extending through the gates. Each aperture has an average width “r” along a bottom planar surface of the aperture. Each aperture defines a midpoint plane positioned parallel to and equally distant from the top metal gate layer planar surface and the bottom metal gate layer planar surface. A plurality of filaments are individually positioned in an aperture. Each filament has a filament axis. The intersection of the filament axis and the midpoint plane defines a point “O”. Each filament includes a filament tip terminating at a point “A”. A majority of all filament tips of the display have a length “L” between each filament tip at point A and point O along the filament axis where, L≦(s+r)/2.

Abstract translation: 用于场致发射显示器的门控灯丝结构包括多个灯丝。 包括衬底，邻近衬底定位的绝缘层以及与绝缘层相邻的金属栅极层位置。 金属栅极层具有多个栅极，金属栅极层具有平均厚度“s”以及基本上平行于底部金属栅极层平面的顶部金属栅极层平坦表面。 金属栅极层包括延伸通过栅极的多个孔。 每个孔具有沿着孔的底部平坦表面的平均宽度“r”。 每个孔限定平行于并等距离顶部金属栅极层平面和底部金属栅极层平面的中点平面。 多个细丝单独地定位在孔中。 每根灯丝都有一个灯丝轴线。 灯丝轴和中点平面的交点定义点“O”。 每个细丝包括终止于“A”点的细丝末端。 显示器的所有灯丝尖端的大部分在点A处的每个灯丝尖端和灯丝轴线处的点O之间具有长度“L”