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    Method for creating gated filament structures for field emission displays
    1.
    发明授权
    Method for creating gated filament structures for field emission displays 失效
    用于产生用于场发射显示器的门控灯丝结构的方法

    公开(公告)号：US07025892B1

    公开(公告)日：2006-04-11

    申请号：US08383409

    申请日：1995-01-31

    Applicant: David L. Bergeron ,  John M. Macaulay ,  Roger W. Barton ,  Jeffrey D. Morse

    Inventor： David L. Bergeron ,  John M. Macaulay ,  Roger W. Barton ,  Jeffrey D. Morse

    IPC: H01B13/00 ,  C23F1/00

    CPC classification number: H01J9/025 ,  C23F4/00 ,  H01J1/3044 ,  H01J3/022 ,  H01J31/127

    Abstract: A method is provided for creating gated filament structures for a field emission display. A multi-layer structure is provided that includes a substrate, an insulating layer and a metal gate layer positioned on at least a portion of a top surface of the insulating layer. A plurality of patterned gates are also provided in order to define a plurality of gate apertures on the top surface of the insulating layer. A plurality of spacers are formed in the gate apertures at edges of the patterned gates on the top surface of the insulating layer. The spacers are used as masks for etching the insulating layer and forming a plurality of pores in the insulating layer. The pores are plated with a filament material that extends from the insulating pores, into the gate apertures, and creates a plurality of filaments. The spacers are then removed. The multi-layer structure can further include a conductivity layer on at least a portion of a top surface of the substrate.

    Abstract translation: 提供了一种用于产生用于场致发射显示器的门控灯丝结构的方法。 提供了多层结构，其包括位于绝缘层的顶表面的至少一部分上的基板，绝缘层和金属栅极层。 还提供了多个图案化栅极，以便在绝缘层的顶表面上限定多个栅极孔。 在绝缘层的顶表面上的图案化栅极的边缘处的栅极孔中形成多个间隔物。 间隔物用作蚀刻绝缘层并在绝缘层中形成多个孔的掩模。 这些孔镀有从绝缘孔延伸到栅极孔中的细丝材料，并且产生多根长丝。 然后移除间隔物。 所述多层结构还可以包括在所述衬底的顶表面的至少一部分上的导电层。

    Use of charged-particle tracks in fabricating electron-emitting device having resistive layer
    3.
    发明授权
    Use of charged-particle tracks in fabricating electron-emitting device having resistive layer 失效
    在制造具有电阻层的电子发射器件中使用带电粒子轨迹

    公开(公告)号：US5813892A

    公开(公告)日：1998-09-29

    申请号：US678565

    申请日：1996-07-12

    Applicant: Christopher J. Spindt ,  John M. Macaulay

    Inventor： Christopher J. Spindt ,  John M. Macaulay

    IPC: H01J1/304 ,  H01J3/02 ,  H01J9/02

    CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319

    Abstract: A gated electron-emitter is fabricated according to the process in which charged particles are directed towards a track-susceptible layer (48) to form charged-particle tracks (50B.sub.1) through the track-susceptible layer. Apertures (52.sub.1) are formed through the track-susceptible layer by etching along the charged-particle tracks. A gate layer (46) is etched through the apertures to form gate openings (54.sub.1) through the gate layer. An insulating layer (24) is etched through the gate openings to form dielectric open spaces (56.sub.1, 94.sub.1, 106.sub.1, or 114.sub.1) through the insulating layer down to a resistive layer (22B) of an underlying conductive region (22). Electron-emissive elements (30B, 30/88D.sub.1, 98/102.sub.1, or 118.sub.1) are formed in the dielectric open spaces over the resistive layer.

    Abstract translation: 根据其中带电粒子指向轨道敏感层（48）以通过轨道敏感层形成带电粒子轨迹（50B1）的工艺制造门控电子发射器。 通过沿着带电粒子轨迹的蚀刻，通过轨道敏感层形成孔径（521）。 通过孔径蚀刻栅极层（46），以形成通过栅极层的栅极开口（541）。 通过栅极开口蚀刻绝缘层（24），以形成通过绝缘层的下行导电区域（22）的电阻层（22B）的电介质开放空间（561,941,1061或1141）。 在电阻层上的电介质开放空间中形成电子发射元件（30B，30 / 88D1,98 / 1011或1181）。

    Formation of layer having openings produced by utilizing particles deposited under influence of electric field
    4.
    发明授权
    Formation of layer having openings produced by utilizing particles deposited under influence of electric field 失效
    通过利用在电场影响下沉积的颗粒产生开口的层的形成

    公开(公告)号：US5755944A

    公开(公告)日：1998-05-26

    申请号：US660535

    申请日：1996-06-07

    Applicant: Duane A. Haven ,  Esther Sluzky ,  John M. Macaulay

    Inventor： Duane A. Haven ,  Esther Sluzky ,  John M. Macaulay

    IPC: C25D13/02 ,  C25D13/12 ,  H01J9/02 ,  C23D13/02

    CPC classification number: H01J9/025

    Abstract: A method for creating a solid layer (36A or 52A) through which openings (38 or 54) extend entails subjecting particles (30) suspended in a fluid (26) to an electric field (E.sub.A) to cause a number of the particles to move towards, and accumulate over, a structure placed in the fluid. The structure, including the so-accumulated particles, is removed from the fluid. Solid material is deposited over the structure at least in the space between the so-accumulated particles. The particles, including any overlying material (36B or 52B), are removed. The remaining solid material forms the solid layer through which openings extend at the locations of the so-removed particles. The structure is typically a layer is then typically either a gate layer for the electron-emitting device or a layer used in forming the gate layer.

    Abstract translation: 用于产生开口（38或54）延伸的固体层（36A或52A）的方法需要使悬浮在流体（26）中的颗粒（30）至电场（EA）使许多颗粒移动 朝向和积聚，放置在流体中的结构。 从流体中除去包括如此累积的颗粒的结构。 至少在所累积的颗粒之间的空间中，在该结构上沉积固体材料。 包括任何上覆材料（36B或52B）的颗粒被去除。 剩余的固体材料形成固体层，开孔在这样去除的颗粒的位置处延伸穿过该固体层。 该结构通常是层，然后通常是用于电子发射器件的栅极层或用于形成栅极层的层。

    Fabrication of electron-emitting structures using charged-particle tracks and removal of emitter material
    6.
    发明授权
    Fabrication of electron-emitting structures using charged-particle tracks and removal of emitter material 失效
    使用带电粒子迹线制造电子发射结构并去除发射极材料

    公开(公告)号：US5607335A

    公开(公告)日：1997-03-04

    申请号：US269311

    申请日：1994-06-29

    Applicant: Christopher J. Spindt ,  John M. Macaulay

    Inventor： Christopher J. Spindt ,  John M. Macaulay

    IPC: H01J9/02

    CPC classification number: H01J9/025

    Abstract: An electron emitter suitable for a flat-panel CRT display is fabricated by a process in which charged particles are passed through a track layer (144) to create charged-particle tracks (146.sub.1). The track layer is etched along the tracks to form apertures (148.sub.1) that are employed in defining corresponding cap regions (150A) over an underlying emitter layer (142). After removing the track layer, part of the emitter layer is removed using the cap regions as masks to control the extent of the emitter material removed. Electron-emissive elements (142D), typically in the shape of cones, are thereby formed in the remainder (142C) of the emitter layer. The electron emitter can also be provided with a gate electrode (158C).

    Abstract translation: 适用于平板CRT显示器的电子发射器通过使带电粒子通过轨道层（144）以形成带电粒子轨迹（1461）的工艺来制造。 沿着轨道蚀刻轨道层以形成用于在下面的发射极层（142）上方限定对应的盖区域（150A）的孔（1481）。 在去除轨道层之后，使用盖区域作为掩模去除部分发射极层，以控制去除发射极材料的程度。 因此，在发射极层的其余部分（142C）中形成通常为锥体形状的电子发射元件（142D）。 电子发射体也可以设置有栅电极（158C）。

    Method for creating gated filament structures for field emision displays
    7.
    发明授权
    Method for creating gated filament structures for field emision displays 失效
    用于产生用于场致密显示的门控灯丝结构的方法

    公开(公告)号：US5578185A

    公开(公告)日：1996-11-26

    申请号：US383408

    申请日：1995-01-31

    Applicant: David L. Bergeron ,  John M. Macaulay ,  Roger W. Barton ,  Jeffrey D. Morse

    Inventor： David L. Bergeron ,  John M. Macaulay ,  Roger W. Barton ,  Jeffrey D. Morse

    IPC: H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  C25D5/02

    CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319

    Abstract: A method is provided for creating gated filament structures for a field emission display. A multi-layer structure is provided that includes a substrate, an insulating layer, a metal gate layer positioned on a top surface of the insulating layer and a gate encapsulation layer positioned on a top surface of the metal gate layer. A plurality of gates are provided and define a plurality of apertures on the top of the insulating layer. A plurality of spacers are formed in the apertures at their edges on the top surface of the insulating layer. The spacers are used as masks for etching the insulating layer and form a plurality of pores in the insulating layer. The pores are plated with a filament material to create a plurality of filaments. The pores can be overplated to create the plurality of filaments. The filaments are vertically self-aligned in the pores.

    Abstract translation: 提供了一种用于产生用于场致发射显示器的门控灯丝结构的方法。 提供了一种多层结构，其包括基板，绝缘层，位于绝缘层的顶表面上的金属栅极层和位于金属栅极层顶表面上的栅极封装层。 提供多个栅极并且在绝缘层的顶部上限定多个孔。 在绝缘层的顶表面上的边缘处的孔中形成多个间隔物。 间隔物用作蚀刻绝缘层并在绝缘层中形成多个孔的掩模。 用细丝材料电镀细孔以产生多根长丝。 孔可以被过度铺展以产生多根细丝。 细丝在孔中垂直自对准。

    Structure and fabrication of gated electron-emitting device having electron optics to reduce electron-beam divergence
    8.
    发明授权
    Structure and fabrication of gated electron-emitting device having electron optics to reduce electron-beam divergence 失效
    具有电子光学器件的门控电子发射器件的结构和制造以减少电子束发散

    公开(公告)号：US5552659A

    公开(公告)日：1996-09-03

    申请号：US269312

    申请日：1994-06-29

    Applicant: John M. Macaulay ,  Christopher J. Spindt ,  Patrick A. Corcoran ,  Lee H. Veneklasen

    Inventor： John M. Macaulay ,  Christopher J. Spindt ,  Patrick A. Corcoran ,  Lee H. Veneklasen

    IPC: H01J3/02 ,  H01J1/02

    CPC classification number: H01J3/022 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2329/00

    Abstract: An electron emitter contains a gate layer (38), an underlying dielectric layer (36), an intermediate non-insulating layer (34) situated below the dielectric layer, and a lower non-insulating region (32) situated below the intermediate non-insulating layer. A multiplicity of electron-emissive particles (42) are situated over the non-insulating region at the bottom of an opening (40) extending through the three layers. The ratio of the thickness of the dielectric layer to the thickness of the intermediate non-insulating layer is in the range of 1:1 to 4:1, while the ratio of the mean diameter of the opening to the thickness of the intermediate non-insulating layer is in the range 1:1 to 10:1. The presence of the intermediate non-insulating layer improves the collimation of the beam of electrons emitted from the electron-emissive elements. The electron emitter is manufactured according to a simple, readily controllable process.

    Abstract translation: 电子发射器包括栅极层（38），下面的介电层（36），位于电介质层下面的中间非绝缘层（34）和位于中间非绝缘层下面的下部非绝缘区域（32） 绝缘层。 多个电子发射颗粒（42）位于延伸穿过三层的开口（40）底部的非绝缘区域的上方。 介电层的厚度与中间非绝缘层的厚度之比在1：1至4：1的范围内，而开口的平均直径与中间非绝缘层的厚度之比 绝缘层的范围为1：1至10：1。 中间非绝​​缘层的存在改善了从电子发射元件发射的电子束的准直。 电子发射器是根据简单易操控制造的。

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