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231.
公开(公告)号:US20180369601A1
公开(公告)日:2018-12-27
申请号:US15563044
申请日:2016-03-30
Applicant: The University of Tokyo , OSAKA UNIVERSITY
Inventor: Youichi SAITOH , Masaki SEKINO , Keita YAMAMOTO
Abstract: A coil apparatus for use in a transcranial magnetic stimulation apparatus is provided to further increase an electric field intensity on a head surface. The coil apparatus includes a wound-wire coil disposed on or near a head surface so as to generate a current by an induced electric field through electromagnetic induction in a magnetic stimulation-target region of a brain for stimulating neurons. The wound-wire coil includes a near-head-surface conductive wire portion disposed on or near the head surface, and a far-head-surface conductive wire portion disposed farther from the head surface than the near-head-surface conductive wire portion. A distance between the near-head-surface conductive wire portion and the far-head-surface conductive wire portion is set to be changed so that an intensity of the induced electric field becomes larger than that of a surrounding region of the magnetic stimulation-target region.
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公开(公告)号:US20180327699A1
公开(公告)日:2018-11-15
申请号:US15771180
申请日:2016-10-28
Applicant: THE UNIVERSITY OF TOKYO , OSAKA UNIVERSITY
Inventor: Sadao OTA , Issei SATO , Katsuhito FUJIU , Satoko YAMAGUCHI , Kayo WAKI , Yoko ITAHASHI , Ryoichi HORISAKI
Abstract: An analysis device includes an analysis unit configured to receive scattered light, transmitted light, fluorescence, or electromagnetic waves from an observed object located in a light irradiation region light-irradiated from a light source and analyze the observed object on the basis of a signal extracted on the basis of a time axis of an electrical signal output from a light-receiving unit configured to convert the received light or electromagnetic waves into the electrical signal.
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233.
公开(公告)号:US20180326489A1
公开(公告)日:2018-11-15
申请号:US15772465
申请日:2016-10-12
Applicant: Nissan Motor Co., Ltd. , Osaka University
Inventor: Masaru Uenohara , Takashi Furuya , Koichi Nakazawa , Shinichirou Fujikawa , Seiji Kawai , Kenichi Machida , Genya Yamato
Abstract: An improvement of coercive force of Nd—Fe—B base sintered magnet can be realized while suppressing a decrease in remanent magnetic flux density to the minimum using a method for modifying grain boundary which comprises heat-treating an Nd—Fe—B base magnet with a specific alloy disposed on its surface, the alloy having the following Formula 1: RxAyBz (1) wherein R represents at least one rare earth element including Sc and Y, A represents Ca or Li, B represents an unavoidable impurity, and 2≤x≤99, 1≤y
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公开(公告)号:US10128731B2
公开(公告)日:2018-11-13
申请号:US14113428
申请日:2012-05-16
Applicant: Ryota Hiura , Katsuhiro Hirata , Hiroshi Ishiguro , Yoshihiro Nakata
Inventor: Ryota Hiura , Katsuhiro Hirata , Hiroshi Ishiguro , Yoshihiro Nakata
Abstract: A linear vernier motor includes a stator and a mover. The stator extends in a first direction. The mover extends in the first direction and a pole interval is different from that of the stator. At least one of the stator and the mover includes: a plurality of permanent magnets arranged in the first direction and a plurality of yokes arranged in the first direction. Each of the plurality of yokes is arranged between adjacent permanent magnets. The plurality of permanent magnets is magnetized to the first direction and magnetization orientations of adjacent permanent magnets are opposite to each other.
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公开(公告)号:US10103232B2
公开(公告)日:2018-10-16
申请号:US15687302
申请日:2017-08-25
Applicant: OSAKA UNIVERSITY
Inventor: Heiji Watanabe , Takahiro Yamada , Mikito Nozaki , Takuji Hosoi , Takayoshi Shimura
IPC: H01L29/778 , H01L29/40 , H01L21/02 , H01L21/285 , H01L29/20 , H01L21/28 , H01L29/51
Abstract: A semiconductor device (100) includes a base layer (10), an interface layer (20), and a deposition layer (30). The base layer (10) includes a nitride semiconductor that contains gallium. The interface layer (20) is adjacent to the base layer (10). The interface layer (20) contains gallium oxide. The deposition layer (30) is adjacent to the interface layer (20). The deposition layer (30) has a wider band gap than the interface layer (20). The interface layer (20) preferably has crystallinity. The interface layer (20) preferably contains α-phase Ga2O3.
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公开(公告)号:US20180246393A1
公开(公告)日:2018-08-30
申请号:US15758536
申请日:2016-09-14
Applicant: NIPPON TELEGRAPH AND TELEPHONE CORPORATION , Inter-University Research Institute Corporation Research Organization of Information and Systems , OSAKA UNIVERSITY
Inventor: Takahiro INAGAKI , Hiroki TAKESUE , Toshimori HONJO , Shoko UTSUNOMIYA , Yoshihisa YAMAMOTO , Yoshitaka HARIBARA , Shuhei TAMATE , Koji IGARASHI
CPC classification number: G02F1/39 , G02F3/00 , G06N5/003 , G06N7/08 , G06N99/002
Abstract: In an Ising spin measuring step, measurement is suspended after one set of measurement of all Ising spins {σi} is completed before another set of measurement of all Ising spins {σi} is restarted. In an Ising interaction computing step, all Ising interactions relating to all the Ising spins σi can be computed with a sufficient time margin on the basis of most recent measurement of Ising spins σi, after one set of measurement of all the Ising spins {σi} is completed before another set of measurement of all the Ising spins {σi} is restarted by the Ising spin measuring step.
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237.
公开(公告)号:US20180231892A1
公开(公告)日:2018-08-16
申请号:US15956214
申请日:2018-04-18
Applicant: OSAKA UNIVERSITY
Inventor: Seiichi TAGAWA , Akihiro OSHIMA
Abstract: A resist patterning method according to the present invention includes: a resist layer forming step S101 of forming a resist layer (12) on a substrate (11); an activating step S103 of activating the resist layer by irradiation with an activating energy beam; a decay inhibiting step S105 of inhibiting decay of the activity of the resist layer; a latent pattern image forming step S107 of forming a latent pattern image in the activated resist layer by irradiation with a latent image forming energy beam; and a developing step S110 of developing the resist layer.
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公开(公告)号:US10039541B2
公开(公告)日:2018-08-07
申请号:US15111846
申请日:2015-01-16
Applicant: TOKUSEN KOGYO CO., LTD. , OSAKA UNIVERSITY
Inventor: Kiyokazu Nakajima , Hiroyuki Yamashita
Abstract: The present invention is a retractor for displacing an organ within the body cavity or the inner wall of a hollow organ, the retractor being provided with: a housing tube; an expansion body which can be housed into and extend from the housing tube; and a grip connected to the proximal ends of the housing tube and the expansion body. The expansion body is provided with: a displacing part configured from a movable wire and multiple fixed wires disposed in the periphery of the moveable wire; and an introduction tube which is disposed along the displacing part and through which the movable wire penetrates. Moreover, when the expansion body is expanded, the displacement part is designed so that, from among the expansion angles formed by two adjacent fixed wires, one expansion angle (θ2) becomes larger than the other expansion angle (θ1).
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公开(公告)号:US10026612B2
公开(公告)日:2018-07-17
申请号:US15028341
申请日:2014-10-08
Applicant: OSAKA UNIVERSITY , ITOCHU PLASTICS INC.
Inventor: Yusuke Mori , Mamoru Imade , Masashi Yoshimura , Masashi Isemura
IPC: C30B25/02 , H01L21/02 , C30B25/14 , C23C16/30 , C23C16/448 , C30B25/00 , C30B29/40 , C23C16/22 , H01L29/20 , H01L29/32
Abstract: The present invention is intended to provide a method of producing a Group III nitride crystal that prevents a halogen-containing by-product from adversely affecting crystal generation and is superior in reactivity and operability. A method of producing a Group III nitride crystal includes a step of causing a Group III metal to react with an oxidizing gas and nitrogen-containing gas, thereby producing a Group III nitride crystal.
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公开(公告)号:US20180194816A1
公开(公告)日:2018-07-12
申请号:US15572886
申请日:2016-05-12
Applicant: OSAKA UNIVERSITY
Inventor: Takeharu Nagai , Hiroki Takauchi , Yoshiyuki Arai , Masahiro Nakano
CPC classification number: C07K14/435 , C07K14/43595 , C07K2319/60 , C12N5/10 , C12N5/16 , C12N15/102 , C12N15/70 , C12N15/81 , C12N15/85 , C12N2750/14143 , G01N21/64 , G01N21/6458
Abstract: A photo-switching fluorescent protein of a type in which wavelengths for switching fluorescence on and off and wavelength for fluorescence excitation are all independent of one another is provided, which has an amino acid sequence in which at least an S208G mutation is introduced into SEQ ID NO: 1. The fluorescent protein may have an amino acid sequence in which at least three mutations, I47V, M153T, and S208G, are introduced into SEQ ID NO: 1. The fluorescent protein may have an amino acid sequence in which at least five mutations, I47V, T59S, M153T, S208G, and M233T, are introduced into SEQ ID NO: 1. The fluorescent protein may have an amino acid sequence in which at least six mutations, I47V, T59S, M69Q, M153T, S208G, and M233T, are introduced into SEQ ID NO: 1.
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