公开(公告)号：US10072923B2

公开(公告)日：2018-09-11

申请号：US14661907

申请日：2015-03-18

Applicant: STMicroelectronics SA

Inventor： Stéphane Valente

IPC: G01C9/00 ,  G01B11/14 ,  G01S17/08 ,  G06N7/00 ,  G06F3/042 ,  G06F3/01 ,  G06F3/03

CPC classification number: G01B11/14 ,  G01S17/08 ,  G06F3/017 ,  G06F3/0304 ,  G06F3/042 ,  G06N7/005

Abstract: The method for processing signals originating for example from several proximity sensors for the recognition of a movement of an object, comprises first respective samplings of the said signals delivered by the sensors so as to obtain a first set of first date-stamped samples, the generation, from the first set of first date-stamped samples, of new sampling times comprising a start of movement time, an end of movement time, and times regularly spaced between the start of movement time and the end of movement time, a re-sampling of the signal delivered by each sensor between the start of movement time and the end of movement time at the said new sampling times using the first samples, in such a manner as to generate a second set of second date-stamped samples, and a processing of the said second set of date-stamped samples by a movement recognition algorithm.

公开(公告)号：US20180247422A1

公开(公告)日：2018-08-30

申请号：US15692794

申请日：2017-08-31

Applicant: STMicroelectronics SA

Inventor： Manu ALIBAY ,  Olivier POTHIER ,  Victor MACELA ,  Alain BELLON ,  Arnaud BOURGE

IPC: G06T7/521 ,  G01S17/08

CPC classification number: G06T7/521 ,  G01S17/08 ,  G06T7/55 ,  G06T7/593 ,  G06T2207/10012 ,  G06T2207/10021 ,  G06T2207/10028 ,  G06T2207/20212 ,  H04N13/207 ,  H04N13/254 ,  H04N13/271 ,  H04N2013/0081

Abstract: The method of determination of a depth map of a scene comprises generation of a distance map of the scene obtained by time of flight measurements, acquisition of two images of the scene from two different viewpoints, and stereoscopic processing of the two images taking into account the distance map. The generation of the distance map includes generation of distance histograms acquisition zone by acquisition zone of the scene, and the stereoscopic processing includes, for each region of the depth map corresponding to an acquisition zone, elementary processing taking into account the corresponding histogram.

公开(公告)号：US20180142923A1

公开(公告)日：2018-05-24

申请号：US15801505

申请日：2017-11-02

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Rafael Augusto Prieto Herrera ,  Jean-Philippe Colonna ,  Perceval Coudrain

IPC: F25B15/00 ,  F28F3/00 ,  H05K7/20

Abstract: A heat-transferring device is formed by a stack that includes at least one heat-conducting layer and at least one heat-absorbing layer. The at least one heat-conducting layer has at least one heat-collecting section placed facing a heat source and at least one heat-evacuating section placed facing a heat sink. The at least one heat-absorbing layer includes a phase-change material. One face of the at least one heat-absorbing layer is adjoined to at least one portion of at least one face of the heat-conducting layer.

公开(公告)号：US20180139359A1

公开(公告)日：2018-05-17

申请号：US15591597

申请日：2017-05-10

Applicant: STMicroelectronics SA

Inventor： Estelle Lesellier

IPC: H04N1/60 ,  G06T5/00 ,  G06T5/40 ,  H04N1/62 ,  G06T7/90 ,  G06T7/11 ,  G06T7/136

CPC classification number: H04N1/6027 ,  G06T5/009 ,  G06T5/40 ,  G06T2207/10024 ,  H04N1/6005 ,  H04N1/6072 ,  H04N1/628

Abstract: An image formed from pixels each having components defining a color is processed to implement an increase in the saturation of the image depending on a gain applied by a transfer function depending on the components of the color of each pixel. The gain of the transfer function is parameterized using at least one control parameter respectively dedicated to at least one type of reference image content. The value of the at least one control parameter is calculated depending on the actual content of the image by implementing calculations including determining colorimetric statistics of the pixels of the image and processing the statistics in accordance with at least one processing model respectively associated with the at least one type of reference image content.

公开(公告)号：US20180106969A1

公开(公告)日：2018-04-19

申请号：US15499261

申请日：2017-04-27

Applicant: STMicroelectronics SA

Inventor： Cédric Durand ,  Frédéric Gianesello ,  Folly Eli Ayi-Yovo

IPC: G02B6/30 ,  C03C23/00 ,  B23K26/364 ,  B23K26/402 ,  B23K26/0622

CPC classification number: G02B6/30 ,  B23K26/0624 ,  B23K26/364 ,  B23K26/402 ,  B23K2103/54 ,  C03C17/09 ,  C03C23/0025

Abstract: A method of manufacturing a waveguide in a glass plate is disclosed. The glass plate is scanned with a laser beam directed orthogonally to the glass plate to form a trench according to a pattern of the waveguide to be formed. The scanning is performed by pulses of the laser beam having a duration between 2 and 500 femtoseconds. The glass plate with the trench is treated with hydrofluoric acid. After treating the glass plate, the trench is filled with a material having an index different from that of glass, and, after filling the trench, a cladding layer is deposited.

公开(公告)号：US20180102387A1

公开(公告)日：2018-04-12

申请号：US15839292

申请日：2017-12-12

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Axel Crocherie ,  Jean-Pierre Oddou ,  Stéphane Allegret-Maret ,  Hugues Leininger

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14607 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685

Abstract: A color image sensor including an array of pixels is formed in a semiconductor layer having a back side that receives an illumination. Insulated conductive walls penetrate into the semiconductor layer from the back side and separate the pixels from one another. For each pixel, a color pixel penetrates into from 5 to 30% of a thickness of the semiconductor layer from the back side and occupies at least 90% of the surface area delimited by the walls. An electrically-conductive layer extends from the lateral wall of the filter all the way to the walls.

公开(公告)号：US20180102358A1

公开(公告)日：2018-04-12

申请号：US15497993

申请日：2017-04-26

Applicant: STMicroelectronics SA

Inventor： Philippe Galy ,  Sotirios Athanasiou

IPC: H01L27/02 ,  H01L27/12 ,  H01L29/45 ,  H01L27/06

CPC classification number: H01L27/0266 ,  H01L27/0629 ,  H01L27/1203 ,  H01L29/456

Abstract: An ESD protection device includes a MOS transistor connected between a first terminal and a second terminal and having a gate region, source/drain region and a well region electrically coupled by a resistive-capacitive circuit configured to control turn on of the MOS transistor in response to an ESD event. The resistive-capacitive circuit has a common part with at least one of the source, gate or drain regions of the MOS transistor and includes a capacitive element and a resistive element. A first electrode of the capacitive element is formed by the resistive element and a second electrode of the capacitive element is formed by at least a portion of a semiconductor film within which the source/drain region is formed.

公开(公告)号：US09911827B2

公开(公告)日：2018-03-06

申请号：US15372930

申请日：2016-12-08

Applicant: Commissariat a l'energie atomique et aux energies alternatives ,  STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

Inventor： Louis Hutin ,  Julien Borrel ,  Yves Morand ,  Fabrice Nemouchi

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/08

CPC classification number: H01L29/66643 ,  H01L29/0895 ,  H01L29/66636 ,  H01L29/7839

Abstract: A process for manufacturing a Schottky barrier field-effect transistor is provided. The process includes: providing a structure including a control gate and a semiconductive layer positioned under the gate and having protrusions that protrude laterally with respect to the gate; anisotropically etching at least one of the protrusions by using the control gate as a mask, so as to form a recess in this protrusion, this recess defining a lateral face of the semiconductive layer; depositing a layer of insulator on the lateral face of the semiconductive layer; and depositing a metal in the recess on the layer of insulator so as to form a contact of metal/insulator/semiconductor type between the deposit of metal and the lateral face of the semiconductive layer.

公开(公告)号：US20180061833A1

公开(公告)日：2018-03-01

申请号：US15804669

申请日：2017-11-06

Applicant: STMicroelectronics SA

Inventor： Philippe Galy ,  Sotirios Athanasiou

IPC: H01L27/092 ,  H01L29/786 ,  H01L27/12 ,  H01L21/8238 ,  H01L21/84 ,  H01L23/528 ,  H01L29/08 ,  H01L29/10 ,  H01L29/165

CPC classification number: H01L27/092 ,  H01L21/8238 ,  H01L21/823871 ,  H01L21/84 ,  H01L23/528 ,  H01L27/1203 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/165 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78615 ,  H01L29/78648 ,  H01L29/78654

Abstract: A substrate contact land for a first MOS transistor is produced in and on an active zone of a substrate of silicon on insulator type using a second MOS transistor without any PN junction that is also provided in the active zone. A contact land on at least one of a source or drain region of the second MOS transistor forms the substrate contact land.

公开(公告)号：US09905565B1

公开(公告)日：2018-02-27

申请号：US15464537

申请日：2017-03-21

Applicant: STMicroelectronics SA

Inventor： Hassan El Dirani ,  Yohann Solaro ,  Pascal Fonteneau

IPC: H01L27/108 ,  H01L29/06 ,  H01L29/08 ,  H01L29/78 ,  G11C11/409

CPC classification number: H01L27/10802 ,  G11C11/409 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/407 ,  H01L29/7831 ,  H01L29/7841

Abstract: A microelectronic component is capable of being used as a memory cell. The component includes a semiconductor layer resting on an insulating layer and including a doped source region of a first conductivity type, a doped drain region of a second conductivity type, and an intermediate region, non-doped or more lightly doped, with the second conductivity type, than the drain region, the intermediate region including first and second portions respectively extending from the drain region and from the source region. An insulated front gate electrode rests on the first portion. A first back gate electrode and a second back gate electrode are arranged under the insulating layer, respectively opposite the first portion and the second portion.