Abstract:
An extended field heterodyne detection apparatus comprises a local signal oscillator, a micro-lens array set in optical relation to the local signal oscillator to multiplex a beam from the local signal oscillator, a local oscillator injection lens in the optical path of the local oscillator and the micro-lens array, a semi-reflective beam splitter at the telecentric stop of the local oscillator injection lens to reflect the beam of the local oscillator in parallel to a signal beam passing through the semi-reflective beam splitter, an objective lens, with a stop, located at the semi-reflective beam splitter, and a focal plane array, situated to receive the source beam. The extended field heterodyne detection apparatus solves the problem of creating a local oscillator beam that is mode-matched for an incoming signal beam, for the eventual process of mixing both the signal beam and the local oscillator using a conventional, square-law detector.
Abstract:
A method for the reduction of noise in an image including identifying neighboring pixel values in pixels proximate to a subject pixel; comparing the neighboring pixel values to a preset tolerance range; using neighboring pixel values within the tolerance range to calculate a pixel intensity correction value; and applying the pixel intensity value to the subject pixel.
Abstract:
A nanostructure and method for assembly thereof are disclosed. An exemplary nanostructure includes a photocatalytic nanoparticle; a first tier of metal nanoparticles, each metal nanoparticle of the first tier being linked about the photocatalytic nanoparticle; and a second tier of metal nanoparticles, each metal nanoparticle of the second tier being linked to one of the metal nanoparticles of the first tier and located a distance from the photocatalytic nanoparticle greater than a distance between a metal nanoparticle of the first tier and the photocatalytic nanoparticle.
Abstract:
An apparatus for deploying stowed control surfaces of a projectile is disclosed. The apparatus for deploying stowed control surfaces of a projectile includes a first and second hot gas generators, a first and second gas chambers, a piston wedge, a piston and a barrel. Initially, the first hot gas generator discharges a surge of hot gas into the first gas chamber. In response to the surge of hot gas being discharged into the first gas generator, the piston wedge displaces at least one of the control surfaces to break an environmental seal covering the projectile. After a predetermined amount of time has lapsed, the second hot gas generator discharges a surge of hot gas into the second gas chamber. The surge of hot gas displaces the piston and barrel for deploying the control surfaces completely.
Abstract:
An ultralight laser infrared countermeasure (IRCM) system is disclosed. In One embodiment, the system includes an ultra light housing. The system further includes a laser or an infrared missile warning sensor to provide imagery data upon detecting a threat infrared surface to air missile (IRSAM). The ultralight housing is further configured to include at ultralight laser infrared assembly, which includes a laser, and laser pointer assembly. The ultralight housing is furthermore configured to include a missile warning processing module to produce a track point for the laser and to produce a modulation signal based on the imagery data, wherein the ultralight laser infrared assembly to modulate the laser pointer assembly based on modulation signal for a predetermined length of time to provide multiple simultaneous IRSAM engagement protection.
Abstract:
An electrical connector assembly adapted for military use comprising a high-density maintenance connector which supports high bandwidth video export and low level maintenance functions, a lower density I/O connector, the stacking feature allows multiple branches in an ad hoc distribution center, custom to each user, and the programmability allows for identical cables/stacking connectors to be used in different configurations.
Abstract:
A system for providing situational awareness outside a temporary incident area network includes a prioritized connection module for connecting a mesh network at the incident area to one of a plurality of available communications channels, with the selection based not only on the availability of a communications channel but also on the associated expense, speed, reliability or bandwidth, so that high bandwidth traffic such as video and pictures can be reliably sent from the incident area to a location outside of the incident area. In one embodiment switching to a satellite phone network bypasses problems with terrestrial networks such as cell phone networks and landlines which may be down.
Abstract:
An amplifier for amplifying signals is presented. A cascode power amplifier includes two or more adjacent cascode amplifiers and at least one remote cascode amplifier. The adjacent cascode amplifiers are lined up adjacent each other with inputs of the adjacent cascode amplifiers connected to a common input line and outputs of the of adjacent cascode amplifiers connected to a common output line. The adjacent cascode amplifiers generally operate in parallel. The remote cascode amplifier is spaced apart from the adjacent cascode amplifiers. An input transmission line connects an input of the remote cascode amplifier to the common input line. An output transmission line connects an output of the remote cascode amplifier to the common output line. Amplified outputs of the adjacent cascode amplifiers and amplified outputs of the remote cascode amplifier are power combined and summed into a coherent amplified output signal that is output on the output transmission line.
Abstract:
A novel bulk GaAs with an increased carrier lifetime of at least 10 microseconds has been produced. This novel GaAs has many uses to improve optical and electrical devices. The method of producing the GaAs crystal involves using a technique called low pressure hydride phase epitaxy (LP-HVPE). In this technique, a gas containing Ga (typically GaCl) is reacted with a gas containing As (typically AsH3) at the surface of a GaAs substrate. When grown under the proper conditions, the epitaxial, vapor grown GaAs crystal has ultra-long free carrier lifetimes of at least one order of magnitude greater than that of the previous art of 1 microsecond. This very long free carrier lifetime GaAs will be particularly useful as a semiconductor radiation detector material and is also expected to be useful for many other applications than include medical imaging, solar cells, diode lasers, and optical limiters and other applications.