公开(公告)号：US20180158839A1

公开(公告)日：2018-06-07

申请号：US15825147

申请日：2017-11-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsushi UMEZAKI ,  Hiroyuki MIYAKE

IPC: H01L27/12

CPC classification number: H01L27/124 ,  G09G3/2092 ,  G09G3/3266 ,  G09G3/3674 ,  G09G3/3677 ,  G09G2300/0809 ,  G09G2310/0205 ,  G09G2310/0248 ,  G09G2310/0286 ,  G09G2310/0289 ,  G09G2310/0291 ,  G09G2310/061 ,  G09G2320/0646 ,  G09G2320/0666 ,  G11C19/28 ,  H01L27/0207 ,  H01L27/1222 ,  H01L27/1225

Abstract: To suppress fluctuation in the threshold voltage of a transistor, to reduce the number of connections of a display panel and a driver IC, to achieve reduction in power consumption of a display device, and to achieve increase in size and high definition of the display device. A gate electrode of a transistor which easily deteriorates is connected to a wiring to which a high potential is supplied through a first switching transistor and a wiring to which a low potential is supplied through a second switching transistor, a clock signal is input to a gate electrode of the first switching transistor, and an inverted clock signal is input to a gate electrode of the second switching transistor. Thus, the high potential and the low potential are alternately applied to the gate electrode of the transistor which easily deteriorates.

公开(公告)号：US20180011355A1

公开(公告)日：2018-01-11

申请号：US15545411

申请日：2016-02-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki MIYAKE ,  Makoto KANEYASU

IPC: G02F1/1343 ,  G02F1/1362 ,  G02F1/1335

CPC classification number: G02F1/1343 ,  G02F1/133602 ,  G02F1/136286 ,  G02F2001/13606 ,  G09F9/30 ,  G09G3/3648 ,  G09G2300/0439 ,  H01L27/1225 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A display device in which parasitic capacitance between wirings can be reduced is provided. Furthermore, a display device in which display quality is improved is provided. Furthermore, a display device in which power consumption can be reduced is provided. The display device includes a signal line, a scan line, a first electrode, a second electrode, a third electrode, a first pixel electrode, a second pixel electrode, and a semiconductor film. The signal line intersects with the scan line, the first electrode is electrically connected to the signal line, the first electrode has a region overlapping with the scan line, the second electrode faces the first electrode, the third electrode faces the first electrode, the first pixel electrode is electrically connected to the second electrode, the second pixel electrode is electrically connected to the third electrode, the semiconductor film is in contact with the first electrode, the second electrode, and the third electrode, and the semiconductor film is provided between the scan line and the first electrode to the third electrode.

公开(公告)号：US20170352313A1

公开(公告)日：2017-12-07

申请号：US15605063

申请日：2017-05-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki MIYAKE

IPC: G09G3/3233 ,  G09G3/3266 ,  H01L29/786 ,  H01L27/12 ,  G09G3/3258 ,  G09G3/36 ,  H01L27/32 ,  G02F1/1368

CPC classification number: G09G3/3233 ,  G02F1/1368 ,  G09G3/3258 ,  G09G3/3266 ,  G09G3/3677 ,  G09G2300/0426 ,  G09G2310/08 ,  G09G2320/0271 ,  G09G2320/0626 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/78648 ,  H01L29/7869

Abstract: Control of a light emission period of a light-emitting element results in higher visibility. A display device includes a signal line, a first scan line, a second scan line, and a pixel circuit. The pixel circuit includes a light-emitting element, a first transistor, and a second transistor. The second transistor includes a back gate. The second scan line is electrically connected to the back gate. The second scan line has a function of controlling the threshold voltage of the second transistor and a function of controlling the light emission period of the light-emitting element.

公开(公告)号：US20170309239A1

公开(公告)日：2017-10-26

申请号：US15646452

申请日：2017-07-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki MIYAKE ,  Hideaki SHISHIDO ,  Ryo ARASAWA

IPC: G09G3/36 ,  H01L27/12 ,  H01L29/02 ,  G06F3/038

CPC classification number: G09G3/3648 ,  G06F1/3265 ,  G06F3/038 ,  G09G3/3614 ,  H01L27/1225 ,  H01L29/02 ,  Y02D10/153

Abstract: An object is to provide a driving method of a liquid crystal display device with a low power consumption and a high image quality. A pixel includes a liquid crystal element and a transistor which controls supply of an image signal to the liquid crystal element. The transistor includes, in a channel formation region, a semiconductor which has a wider band gap than a silicon semiconductor and has a lower intrinsic carrier density than silicon, and has an extremely low off-state current. In inversion driving of pixels, image signals having opposite polarities are input to a pair of signal lines between which a pixel electrode is disposed. By employing such a structure, the quality of the displayed image can be increased even in the absence of a capacitor in the pixel.

公开(公告)号：US20170186778A1

公开(公告)日：2017-06-29

申请号：US15386649

申请日：2016-12-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki MIYAKE ,  Kenichi OKAZAKI ,  Yasuharu HOSAKA ,  Yukinori SHIMA

IPC: H01L27/12 ,  H01L51/00 ,  H01L29/04 ,  H01L29/66 ,  H01L29/786 ,  H01L29/24

CPC classification number: H01L27/1225 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/005

Abstract: Provided is a novel semiconductor device. The semiconductor device comprises a first transistor and a second transistor. The first transistor comprises a first gate electrode; a first insulating film over the first gate electrode; a first oxide semiconductor film over the first insulating film; a first source electrode and a first drain electrode over the first oxide semiconductor film; a second insulating film over the first oxide semiconductor film, the first source electrode, and the first drain electrode; and a second gate electrode over the second insulating film. The second transistor comprises a first drain electrode; the second insulating film over the second drain electrode; a second oxide semiconductor film over the second insulating film; a second source electrode and a second drain electrode over the second oxide semiconductor film; a third insulating film over the second oxide semiconductor film, the second source electrode, and the second drain electrode; and a third gate electrode over the third insulating film. The first oxide semiconductor film partly overlaps with the second oxide semiconductor film.

公开(公告)号：US20170170466A1

公开(公告)日：2017-06-15

申请号：US15374048

申请日：2016-12-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki MIYAKE ,  Nobuhiro INOUE ,  Ryo YAMAUCHI ,  Mako MOTOYOSHI ,  Takahiro KAWAKAMI ,  Mayumi MIKAMI ,  Miku FUJITA ,  Shunpei YAMAZAKI

IPC: H01M4/36 ,  H01M4/62 ,  H01M4/134 ,  H01M10/0525 ,  H01M4/38

CPC classification number: H01M4/366 ,  H01G11/06 ,  H01G11/28 ,  H01G11/30 ,  H01G11/36 ,  H01G11/50 ,  H01M4/134 ,  H01M4/386 ,  H01M4/626 ,  H01M10/0525

Abstract: A power storage device having high capacitance is provided. A power storage device with excellent cycle characteristics is provided. A power storage device with high charge and discharge efficiency is provided. A power storage device including a negative electrode with low resistance is provided. A negative electrode for a power storage device includes a number of composites in particulate forms. The composites include a negative electrode active material, a first functional material, and a compound. The compound includes a constituent element of the negative electrode active material and a constituent element of the first functional material. The negative electrode active material includes a region in contact with at least one of the first functional material or the compound.

公开(公告)号：US20170162644A1

公开(公告)日：2017-06-08

申请号：US15436149

申请日：2017-02-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroyuki MIYAKE

IPC: H01L27/32

CPC classification number: H01L27/3265 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/7869

Abstract: A display device having a high aperture ratio and including a capacitor that can increase capacitance is provided. A pair of electrodes of the capacitor is formed using a light-transmitting conductive film. One of the electrodes of the capacitor is formed using a metal oxide film, and the other of the electrodes of the capacitor is formed using a light-transmitting conductive film. With such a structure, light can be emitted to the capacitor side when an organic insulating film is provided over the capacitor and a pixel electrode of a light-emitting element is formed over the organic insulating film. Thus, the capacitor can transmit light and can overlap the light-emitting element. Consequently, the aperture ratio and capacitance can be increased.

公开(公告)号：US20170101021A1

公开(公告)日：2017-04-13

申请号：US15387077

申请日：2016-12-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junpei MOMO ,  Hiroyuki MIYAKE ,  Kei TAKAHASHI

IPC: B60L11/18 ,  G01R31/36 ,  H02J7/00

CPC classification number: B60L11/1816 ,  B60L11/182 ,  G01R31/3606 ,  H01M4/625 ,  H01M10/0525 ,  H01M10/44 ,  H02J7/0052 ,  H02J7/0057 ,  H02J7/0068 ,  Y02E60/122 ,  Y02T10/7011

Abstract: An object is to inhibit a decrease in the capacity of a power storage device or to compensate the capacity, by adjusting or rectifying an imbalance between a positive electrode and a negative electrode, which is caused by decomposition of an electrolyte solution at the negative electrode. Provided is a charging method of a power storage device including a positive electrode using an active material that exhibits two-phase reaction, a negative electrode, and an electrolyte solution. The method includes the steps of, after constant current charging, performing constant voltage charging with a voltage that does not cause decomposition of the electrolyte solution until a charging current becomes lower than or equal to a lower current value limit; and after the constant voltage charging, performing additional charging with a voltage that causes decomposition of the electrolyte solution until a resistance of the power storage device reaches a predetermined resistance.

公开(公告)号：US20170075475A1

公开(公告)日：2017-03-16

申请号：US15259117

申请日：2016-09-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroyuki MIYAKE

IPC: G06F3/041 ,  G09G3/3233 ,  G06F3/044

CPC classification number: G06F3/0416 ,  G02F1/13338 ,  G06F3/0412 ,  G06F3/044 ,  G06F2203/04103 ,  G09G3/3233 ,  G09G2230/00 ,  G09G2310/06 ,  H01L27/323

Abstract: A novel input/output panel that is highly convenient or reliable is provided. In addition, a novel input/output device that is highly convenient or reliable is provided. The input/output panel includes a display element, a first conductive film, and a second conductive film. The first conductive film is electrically connected to a plurality of pixel circuits, and the second conductive film is provided so that an electric field which is partly interrupted by an object approaching on the display side of the display element is formed between the first conductive film and the second conductive film.

Abstract translation: 提供了一种非常方便或可靠的新型输入/输出面板。 另外，提供了一种非常方便或可靠的新型输入/输出装置。 输入/输出面板包括显示元件，第一导电膜和第二导电膜。 第一导电膜电连接到多个像素电路，并且第二导电膜被设置成使得在第一导电膜和第二导电膜之间形成被显示元件的显示侧上接近的物体部分中断的电场 第二导电膜。

公开(公告)号：US20170047354A1

公开(公告)日：2017-02-16

申请号：US15335510

申请日：2016-10-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiroyuki MIYAKE ,  Takahiro SATO ,  Masami JINTYOU

IPC: H01L27/12 ,  G06F3/041 ,  H01L29/423 ,  H01L29/786 ,  H01L29/417 ,  H01L29/49

CPC classification number: H01L27/1225 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/134336 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2201/123 ,  G06F3/041 ,  G06F2203/04103 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/7869

Abstract: A semiconductor device including a transistor and a connection portion is provided. The transistor includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film and at a position overlapping with the gate electrode, and source and drain electrodes electrically connected to the oxide semiconductor film; and the connection portion includes a first wiring on the same surface as a surface on which the gate electrode is formed, a second wiring on the same surface as a surface on which the source and drain electrodes are formed, and a third wiring connecting the first wiring and the second wiring. The distance between an upper end portion and a lower end portion of the second wiring is longer than the distance between an upper end portion and a lower end portion of each of the source and drain electrodes.

Abstract translation: 提供了包括晶体管和连接部分的半导体器件。 晶体管包括栅电极，栅电极上的第一绝缘膜，第一绝缘膜上的氧化物半导体膜和与栅电极重叠的位置，电连接到氧化物半导体膜的源极和漏极; 连接部包括与形成有栅电极的表面相同的表面上的第一布线，与形成有源极和漏极的表面相同的表面上的第二布线，以及连接第一布线的第一布线 接线和第二个接线。 第二配线的上端部和下端部之间的距离比源电极和漏电极的上端部与下端部的距离长。