公开(公告)号：US12261059B2

公开(公告)日：2025-03-25

申请号：US17880473

申请日：2022-08-03

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Patrick Hauttecoeur

IPC: H01L21/32 ,  H01L21/02 ,  H01L21/324

Abstract: The present description concerns a method of manufacturing a device comprising at least one radio frequency component on a semiconductor substrate comprising: a) a laser anneal of a first thickness of the substrate on the upper surface side of the substrate; b) the forming of an insulating layer on the upper surface of the substrate; and c) the forming of said at least one radio frequency component on the insulating layer.

公开(公告)号：US12184196B2

公开(公告)日：2024-12-31

申请号：US17903214

申请日：2022-09-06

Applicant: STMicroelectronics (Tours) SAS

Inventor： Yannick Hague ,  Romain Launois

IPC: H02M7/219 ,  H02M1/00 ,  H02M1/08 ,  H02M7/162 ,  H02M7/757

Abstract: A converter includes first and second transistors coupled between first and second nodes, and first and second thyristors coupled between the first and second nodes. The converter is controlled for operation to: in first periods, turn the first transistor and second thyristor on and turn the second transistor and the first thyristor off, and in second periods, turn the first transistor and the second thyristor off and turn the second transistor and the first thyristor on. Further control of converter operation includes, for a third period following each first period, turning the first and second transistors off, turning the second thyristor off, and injecting a current into the gate of the first thyristor. Additional control of converter operation includes, for a fourth period following each second period, turning the first and second transistors off, turning the first thyristor off, and injecting a current into the gate of the second thyristor.

公开(公告)号：US12101022B2

公开(公告)日：2024-09-24

申请号：US17550534

申请日：2021-12-14

Applicant: STMicroelectronics (Tours) SAS

Inventor： Yannick Hague ,  Benoit Renard ,  Romain Launois

IPC: H02M1/36 ,  H02M1/32 ,  H02M7/06 ,  H02M7/12 ,  H02M7/219

CPC classification number: H02M1/36 ,  H02M1/32 ,  H02M1/327 ,  H02M7/062 ,  H02M7/125 ,  H02M7/219

Abstract: A voltage converter includes a circuit formed by a parallel association, connected between first and second nodes, of a first branch and a second branch. The first branch includes a first controlled rectifying element having a first impedance. The second branch includes a resistor associated in series with a second rectifying element having a second impedance substantially equal to the first impedance. The second rectifying element may, for example, be a triac having its gate coupled to receive a signal from an intermediate node in the series association of the second branch. Alternatively, the second rectifying element may be a thyristor having its gate coupled to receive a signal at the anode of the thyristor.

公开(公告)号：US20240194666A1

公开(公告)日：2024-06-13

申请号：US18444494

申请日：2024-02-16

Applicant: STMICROELECTRONICS S.r.l. ,  STMICROELECTRONICS (TOURS) SAS

Inventor： Jean-Michel SIMONNET ,  Sophie NGO ,  Simone RASCUNÀ

IPC: H01L27/02 ,  H01L29/04 ,  H01L29/16 ,  H01L29/20 ,  H01L29/417 ,  H01L29/868 ,  H02H9/04

CPC classification number: H01L27/0255 ,  H01L29/04 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/417 ,  H01L29/868 ,  H02H9/046

Abstract: Overvoltage protection circuits are provided. In some embodiments, an overvoltage protection circuit includes a first diode made of a first semiconductor material having a bandgap width greater than that of silicon. A second diode is included and is electrically cross-coupled with the first diode. The second diode is made of a second semiconductor material different from the first semiconductor material.

公开(公告)号：US11996784B2

公开(公告)日：2024-05-28

申请号：US17532717

申请日：2021-11-22

Applicant: STMicroelectronics (Tours) SAS

Inventor： Yannick Hague ,  Romain Launois

IPC: H02M7/06 ,  H02M1/32 ,  H02M1/36

CPC classification number: H02M7/062 ,  H02M1/322 ,  H02M1/36

Abstract: A voltage converter delivers an output voltage between a first and a second node. The voltage converter includes a capacitor series-coupled with a resistor between the first and second nodes. The resistor is coupled in parallel with a bidirectional switch receiving at its control terminal a positive bias voltage referenced to the second node.

公开(公告)号：US11949023B2

公开(公告)日：2024-04-02

申请号：US17556634

申请日：2021-12-20

Applicant: STMicroelectronics (Tours) SAS

Inventor： Arnaud Yvon ,  Lionel Jaouen

IPC: H01L29/861 ,  H01L21/761 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L29/8611 ,  H01L21/761 ,  H01L29/0623 ,  H01L29/66128 ,  H01L29/66136

Abstract: A device includes a diode. The anode of the diode includes first, second, and third areas. The first area partially covers the second area and has a first doping level greater than a second doping level of the second area. The second area partially covers the third area and has the second doping level greater than a third doping level of the third area. A first insulating layer partially overlaps the first and second areas.

公开(公告)号：US11936288B2

公开(公告)日：2024-03-19

申请号：US17548754

申请日：2021-12-13

Applicant: STMicroelectronics (Tours) SAS ,  STMicroelectronics LTD

Inventor： Ghafour Benabdelaziz ,  Laurent Gonthier

IPC: H02M1/42 ,  H02M1/32 ,  H02M7/155 ,  H02M7/217

CPC classification number: H02M1/4208 ,  H02M7/1557 ,  H02M7/217 ,  H02M1/322

Abstract: An AC capacitor is coupled to a totem-pole type PFC circuit. In response to detection of a power input disconnection, the PFC circuit is controlled to discharge the AC capacitor. The PFC circuit includes a resistor and a first MOSFET and a second MOSFET coupled in series between DC output nodes with a common node coupled to the AC capacitor. When the disconnection event is detected, one of the first and second MOSFETs is turned on to discharge the AC capacitor with a current flowing through the resistor and the turned on MOSFET. Furthermore, a thyristor may be simultaneously turned on, with the discharge current flowing through a series coupling of the MOSFET, resistor and thyristor. Disconnection is detected by detecting a zero-crossing failure of an AC power input voltage or lack of input voltage decrease or input current increase in response to MOSFET turn on for a DC input.

公开(公告)号：US11881358B2

公开(公告)日：2024-01-23

申请号：US17839189

申请日：2022-06-13

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Mohamed Boufnichel

IPC: H01G4/30 ,  H01G4/224 ,  H01G4/33 ,  H01L49/02

CPC classification number: H01G4/30 ,  H01G4/224 ,  H01G4/33 ,  H01L28/91

Abstract: A vertical capacitor includes a stack of layers conformally covering walls of a first material. The walls extend from a substrate made of a second material different from the first material.