公开(公告)号：US09991341B2

公开(公告)日：2018-06-05

申请号：US15363616

申请日：2016-11-29

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Arnaud Yvon

IPC: H01L29/06 ,  H01L21/02 ,  H01L21/306 ,  H01L21/322 ,  H01L29/20 ,  H01L29/66 ,  H01L29/36 ,  H01L29/872

CPC classification number: H01L29/0661 ,  H01L21/02002 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02664 ,  H01L21/30612 ,  H01L21/30621 ,  H01L21/30625 ,  H01L21/3228 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/66212 ,  H01L29/872

Abstract: A method is for treating a doped gallium nitride substrate of a first conductivity type, having dislocations emerging on the side of at least one of its surfaces. The method may include: a) forming, where each dislocation emerges, a recess extending into the substrate from the at least one surface; and b) filling the recesses with doped gallium nitride of the second conductivity type.

公开(公告)号：US11830873B2

公开(公告)日：2023-11-28

申请号：US16583090

申请日：2019-09-25

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Arnaud Yvon

IPC: H01L27/08 ,  H01L21/8252 ,  H01L27/06 ,  H01L29/861 ,  H01L29/872

CPC classification number: H01L27/0814 ,  H01L21/8252 ,  H01L27/0676 ,  H01L29/8611 ,  H01L29/872

Abstract: The present description concerns an electronic device comprising a stack of a Schottky diode and of a bipolar diode, connected in parallel by a first electrode located in a first cavity and a second electrode located in a second cavity.

公开(公告)号：US09536747B2

公开(公告)日：2017-01-03

申请号：US14464158

申请日：2014-08-20

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Arnaud Yvon

IPC: H01L21/306 ,  H01L21/02 ,  H01L21/322 ,  H01L29/20 ,  H01L29/66

CPC classification number: H01L29/0661 ,  H01L21/02002 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02664 ,  H01L21/30612 ,  H01L21/30621 ,  H01L21/30625 ,  H01L21/3228 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/66212 ,  H01L29/872

Abstract: A method is for treating a doped gallium nitride substrate of a first conductivity type, having dislocations emerging on the side of at least one of its surfaces. The method may include: a) forming, where each dislocation emerges, a recess extending into the substrate from the at least one surface; and b) filling the recesses with doped gallium nitride of the second conductivity type.

Abstract translation: 一种用于处理第一导电类型的掺杂氮化镓衬底的方法，其具有出现在其表面的至少一个侧面上的位错。 该方法可以包括：a）在每个错位出现的地方形成从所述至少一个表面延伸到所述基底中的凹部; 以及b）用所述第二导电类型的掺杂氮化镓填充所述凹部。

公开(公告)号：US11949023B2

公开(公告)日：2024-04-02

申请号：US17556634

申请日：2021-12-20

Applicant: STMicroelectronics (Tours) SAS

Inventor： Arnaud Yvon ,  Lionel Jaouen

IPC: H01L29/861 ,  H01L21/761 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L29/8611 ,  H01L21/761 ,  H01L29/0623 ,  H01L29/66128 ,  H01L29/66136

Abstract: A device includes a diode. The anode of the diode includes first, second, and third areas. The first area partially covers the second area and has a first doping level greater than a second doping level of the second area. The second area partially covers the third area and has the second doping level greater than a third doping level of the third area. A first insulating layer partially overlaps the first and second areas.

公开(公告)号：US11810911B2

公开(公告)日：2023-11-07

申请号：US16897205

申请日：2020-06-09

Applicant: STMICROELECTRONICS APPLICATION GMBH ,  STMICROELECTRONICS (TOURS) SAS

Inventor： Mathieu Rouviere ,  Arnaud Yvon ,  Mohamed Saadna ,  Vladimir Scarpa

IPC: H01L27/06 ,  H01L21/02 ,  H01L21/8252 ,  H01L29/20 ,  H01L29/40 ,  H01L29/66 ,  H01L29/778 ,  H01L29/872

CPC classification number: H01L27/0629 ,  H01L21/0254 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/2003 ,  H01L29/40 ,  H01L29/66212 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/872

Abstract: A monolithic component includes a field-effect power transistor and at least one first Schottky diode inside and on top of a gallium nitride substrate.

公开(公告)号：US09735292B2

公开(公告)日：2017-08-15

申请号：US15055791

申请日：2016-02-29

Applicant: STMicroelectronics (Tours) SAS

Inventor： Arnaud Yvon

IPC: H01L29/15 ,  H01L29/872 ,  H01L29/417 ,  H01L29/66 ,  H01L29/20 ,  H01L29/205 ,  H01L23/48 ,  H01L27/02 ,  H01L27/08

CPC classification number: H01L29/872 ,  H01L23/481 ,  H01L27/0207 ,  H01L27/0814 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/417 ,  H01L29/66212

Abstract: A Schottky diode is formed on a silicon support. A non-doped GaN layer overlies the silicon support. An AlGaN layer overlies the non-doped GaN layer. A first metallization forming an ohmic contact and a second metallization forming a Schottky contact are provided in and on the AlGaN layer. First vias extend from the first metallization towards the silicon support. Second vias extend from the second metallization towards an upper surface.

公开(公告)号：US20170062625A1

公开(公告)日：2017-03-02

申请号：US15055791

申请日：2016-02-29

Applicant: STMicroelectronics (Tours) SAS

Inventor： Arnaud Yvon

IPC: H01L29/872 ,  H01L29/205 ,  H01L27/08 ,  H01L23/48 ,  H01L27/02 ,  H01L29/20 ,  H01L29/417

CPC classification number: H01L29/872 ,  H01L23/481 ,  H01L27/0207 ,  H01L27/0814 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/417 ,  H01L29/66212

Abstract: A Schottky diode is formed on a silicon support. A non-doped GaN layer overlies the silicon support. An AlGaN layer overlies the non-doped GaN layer. A first metallization forming an ohmic contact and a second metallization forming a Schottky contact are provided in and on the AlGaN layer. First vias extend from the first metallization towards the silicon support. Second vias extend from the second metallization towards an upper surface.

Abstract translation: 在硅载体上形成肖特基二极管。 非掺杂GaN层覆盖硅载体。 AlGaN层覆盖在非掺杂GaN层上。 形成欧姆接触的第一金属化和形成肖特基接触的第二金属化被提供在AlGaN层中和其上。 第一通孔从第一金属化延伸到硅支撑。 第二通孔从第二金属化延伸到上表面。