Abstract:
A proximity sensor includes a printed circuit board substrate, a semiconductor die, electrical connectors, a lens, a light emitting assembly, and an encapsulating layer. The semiconductor die is positioned over the printed circuit board substrate with its upper surface facing away from the printed circuit board substrate. Each of the electrical connectors is in electrical communication with a contact pad of the semiconductor die and a respective contact pad of the printed circuit board substrate. The lens is positioned over a sensor area of the semiconductor die. The light emitting assembly includes a light emitting device having a light emitting area, a lens positioned over the light emitting area, and contact pads facing the printed circuit board substrate. The encapsulating layer is positioned on the printed circuit board substrate, at least one of the electrical connectors, the semiconductor die, the lens, and the light emitting assembly.
Abstract:
An image sensing device includes an interconnect layer and a number of grid array contacts arranged on a bottom side of the interconnect layer. An image sensor integrated circuit (IC) is carried by the interconnect layer and has an image sensing surface. A number of electrical connections are coupled between the image sensor IC and an upper side of the interconnect layer. A transparent plate overlies the image sensing surface of the image sensor IC. A cap is carried by the interconnect layer and has an opening overlying transparent plate and the image sensing surface. The cap has an upper wall spaced above the interconnect layer and the image sensor IC to define an internal cavity and the cap defines an air vent coupled to the internal cavity.
Abstract:
An optical detection sensor functions as a proximity detection sensor that includes an optical system and a selectively transmissive structure. Electromagnetic radiation such as laser light can be emitted through a transmissive portion of the selectively transmissive structure. A reflected beam can be detected to determine the presence of an object. The sensor is formed by encapsulating the transmissive structure in a first encapsulant body and encapsulating the optical system in a second encapsulant body. The first and second encapsulant bodies are then joined together. In a wafer scale assembling the structure resulting from the joined encapsulant bodies is diced to form optical detection sensors.
Abstract:
One or more embodiments are directed to system in package (SiP) for optical devices, including proximity sensor packaging. One embodiment is directed to optical sensor that includes a substrate, an image sensor die and a light-emitting device. A first surface of the image sensor die is coupled to the substrate, and a recess is formed extending into the image sensor die from the first surface toward a second surface of the image sensor die. A light transmissive layer is formed in the image sensor die between the recess and the first surface. The optical sensor further includes a light-emitting device that is coupled to the substrate and positioned within the recess formed in the image sensor die.
Abstract:
An electronic device includes a substrate, an optical sensor coupled to the substrate, and an optical emitter coupled to the substrate. A lens is aligned with the optical emitter and includes an upper surface and an encapsulation bleed stop groove around the upper surface. An encapsulation material is coupled to the substrate and includes first and second encapsulation openings therethrough aligned with the optical sensor and the lens, respectively.
Abstract:
A lead frame having a plurality of concentric lead frame rings configured to receive and support a variety of integrated circuit die having a variety of sizes. The rings are separated from each other by gaps and coupled together by a plurality of tie bars. The concentric rings may be circular or rectangular. The tie bars may extend diagonally from the rings or perpendicularly to the rings.
Abstract:
An image sensing device may include an interconnect layer and grid array contacts carried by the interconnect layer, and an image sensor IC carried by the interconnect layer and coupled to the grid array contacts, the image sensor IC having an image sensing surface. The image sensing device may include a transparent plate carried by the image sensor IC and aligned with the image sensing surface, and a cap carried by the interconnect layer and having an opening aligned with the image sensing surface. The cap may have an upper wall spaced above the interconnect layer and the image sensor IC to define an internal cavity, and the cap may define an air vent coupled to the internal cavity.
Abstract:
An electronic device includes an integrated circuit chip mounted to a heat slug. The heat slug has a peripheral region having first thickness along a first direction, the peripheral region surrounding a recess region (having a second, smaller, thickness along the first direction) that defines a chip mounting surface along a second direction perpendicular to the first direction. The recess region defines side borders and a nook extends into the heat slug along the side borders. An insulating body embeds the integrated circuit one chip and heat slug. Material of the insulating body fills the nook.
Abstract:
A proximity sensor having a relatively small footprint includes a substrate, a semiconductor die, a light emitting device, and a cap. The light emitting device overlies the semiconductor die. The semiconductor die is secured to the substrate and includes a sensor area capable of detecting light from by the light emitting device. The cap also is secured to the substrate and includes a light barrier that prevents some of the light emitted by the light emitting device from reaching the sensor area. In one embodiment, the light emitting device and the semiconductor die are positioned on the same side of the substrate, wherein the light emitting device is positioned on the semiconductor die. In another embodiment, the light emitting device is positioned on one side of the substrate and the semiconductor die is positioned on an opposing side of the substrate.
Abstract:
An image sensor device may include an interconnect layer, an image sensor IC carried by the interconnect layer and having an image sensing surface, and encapsulation material laterally surrounding the image sensor IC and covering an upper surface of the image sensor IC up to the image sensing surface. The image sensor device may include an optical plate having a peripheral lower surface carried by an upper surface of the encapsulation material and aligned with the image sensing surface, the optical plate being spaced above the image sensing surface to define an internal cavity, and a lens assembly coupled to the encapsulation material and aligned with the image sensing surface.