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    Method of forming porous silicon in a silicon substrate, in particular for improving the performance of an inductive circuit
    22.
    发明授权
    Method of forming porous silicon in a silicon substrate, in particular for improving the performance of an inductive circuit 有权
    在硅衬底中形成多孔硅的方法，特别是用于改善电感电路的性能

    公开(公告)号：US06287936B1

    公开(公告)日：2001-09-11

    申请号：US09304887

    申请日：1999-05-04

    Applicant: Ernesto Perea ,  Guillermo Bomchil ,  Aomar Halimaoui

    Inventor： Ernesto Perea ,  Guillermo Bomchil ,  Aomar Halimaoui

    IPC: H01L2176

    CPC classification number: H01L28/10 ,  H01L21/3063 ,  H01L27/0688 ,  H01L27/08

    Abstract: The method is for forming porous silicon in a silicon substrate, in particular for improving the quality factor of an inductive circuit produced on a silicon semiconductor wafer which also incorporates integrated transistors. The rear face of the wafer, already incorporating the transistors and the inductive circuit on its front face, is placed in contact with an acid electrolyte containing hydrofluoric acid and at least one other acid. An anodic oxidation of the silicon of the wafer at the rear face is carried out so as to convert this silicon into porous silicon over a predetermined height from the rear face which is in contact with the electrolyte.

    Abstract translation: 该方法用于在硅衬底中形成多孔硅，特别是用于改善在还包含集成晶体管的硅半导体晶片上产生的感应电路的品质因数。 已经将晶体管和感应电路结合在其前表面上的晶片的后表面与含有氢氟酸和至少一种其它酸的酸性电解液接触。 在背面进行晶片的硅的阳极氧化，以便将其从与电解质接触的背面预定的高度转化为多孔硅。

    HOUSING, IN PARTICULAR FOR A BIOFUEL CELL
    24.
    发明申请
    HOUSING, IN PARTICULAR FOR A BIOFUEL CELL 有权
    住房，特别是生物燃料电池

    公开(公告)号：US20130273440A1

    公开(公告)日：2013-10-17

    申请号：US13993634

    申请日：2011-12-12

    Applicant: Pascale Mazoyer ,  Aomar Halimaoui

    Inventor： Pascale Mazoyer ,  Aomar Halimaoui

    IPC: H01M8/16 ,  H05K5/02

    CPC classification number: H01M8/16 ,  H01G11/52 ,  H01G11/78 ,  H01M8/1097 ,  H05K5/02 ,  Y02E60/13 ,  Y02E60/521 ,  Y02E60/527

    Abstract: A housing includes a body with a first silicon element and a second porous silicon element, at least one first cavity provided in the porous silicon element, a first electrically conducting contact area electrically coupled to at least a portion of at least one internal wall of the at least one first cavity, and a second electrically conducting contact area electrically coupled to a different portion of the at least one internal wall of the second porous silicon element of the at least one first cavity, wherein the two contact areas are electrically isolated from each other.

    Abstract translation: 壳体包括具有第一硅元件和第二多孔硅元件的主体，设置在多孔硅元件中的至少一个第一空腔，第一导电接触区域，电耦合到至少一个内壁的至少一部分 至少一个第一空腔和第二导电接触区域，其电耦合到所述至少一个第一空腔的所述第二多孔硅元件的所述至少一个内壁的不同部分，其中所述两个接触区域与所述至少一个第一空腔电绝缘 其他。

    MODULE ELEMENT, IN PARTICULAR FOR A BIOFUEL CELL, AND MANUFACTURING PROCESS
    25.
    发明申请
    MODULE ELEMENT, IN PARTICULAR FOR A BIOFUEL CELL, AND MANUFACTURING PROCESS 审中-公开
    模块元件，特别是生物燃料电池和制造工艺

    公开(公告)号：US20120225326A1

    公开(公告)日：2012-09-06

    申请号：US13406749

    申请日：2012-02-28

    Applicant: Richard Fournel ,  Aomar Halimaoui

    Inventor： Richard Fournel ,  Aomar Halimaoui

    IPC: H01M8/16 ,  B05D5/12 ,  H01M8/00

    CPC classification number: H01M8/16 ,  H01M8/1097 ,  Y02E60/527 ,  Y02P70/56

    Abstract: A module of a biofuel cell includes three module elements each having a porous membrane. At least two of the porous membranes are electrically conducting and form the cathode and the anode of the biofuel cell. The third membrane, which is preferably positioned between the two electrically conducting membranes need not be conducting, but defines two emergent cavities within the module. A porous through-channel extends through a silicon support of the module so as to connect one of the emergent cavities to at least one external wall of the silicon support.

    Abstract translation: 生物燃料电池的模块包括具有多孔膜的三个模块元件。 至少两个多孔膜是导电的并且形成生物燃料电池的阴极和阳极。 优选地位于两个导电膜之间的第三膜不需要导电，而是限定模块内的两个出射腔。 多孔通道延伸穿过模块的硅支撑件，以便将一个出射空腔连接到硅支撑体的至少一个外壁。

    Method for forming a localized region of a material difficult to etch
    27.
    发明授权
    Method for forming a localized region of a material difficult to etch 有权

    公开(公告)号：US06969661B2

    公开(公告)日：2005-11-29

    申请号：US10744680

    申请日：2003-12-23

    Applicant: Aomar Halimaoui ,  Daniel Bensahel

    Inventor： Aomar Halimaoui ,  Daniel Bensahel

    IPC: H01L21/28 ,  H01L21/316 ,  H01L21/336 ,  H01L29/51 ,  H01L21/3205

    CPC classification number: H01L21/28194 ,  H01L21/31604 ,  H01L21/31691 ,  H01L29/517 ,  H01L29/66583

    Abstract: A method for forming, in an integrated circuit, a localized region of a material difficult to etch, including the steps of forming a first silicon oxide layer having a thickness smaller than 1 nm on a silicon substrate; depositing, on the first layer, a second layer selectively etchable with respect to the first layer; forming in the second layer an opening according to the pattern of said localized region; selectively growing on the second layer, around the opening, a germanium layer, the material of the second layer being chosen to enable this selective growth, whereby there exists in the germanium an opening conformable with the above opening; depositing the material difficult to etch so that it does not deposit on the germanium; depositing a conductive layer to fill the opening in the germanium; performing a leveling to expose the germanium; and removing the germanium and the first and second layers.

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