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28 条记录 (耗时 0.017 秒)

    LED Structure, Manufacturing Method Thereof and LED Module
    22.
    发明申请
    LED Structure, Manufacturing Method Thereof and LED Module 有权
    LED结构及其制造方法和LED模块

    公开(公告)号：US20100084958A1

    公开(公告)日：2010-04-08

    申请号：US12566943

    申请日：2009-09-25

    申请人： Chih-Tsung Shih ,  Chen-Peng Hsu ,  Hung-Lieh Hu

    发明人： Chih-Tsung Shih ,  Chen-Peng Hsu ,  Hung-Lieh Hu

    IPC分类号： H01J7/24 ,  H01L33/00

    CPC分类号： H01L25/167 ,  H01L33/486 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A light emitting diode (LED) structure, a manufacturing method thereof and a LED module are provided. The LED structure has temperature sensing function. The LED structure comprises a composite substrate and an LED. The composite substrate comprises a diode structure whose P-type semiconductor region or N-type semiconductor region has a predetermined doping concentration. The diode structure is a temperature sensor, and the sensitivity of the temperature sensor is based on the predetermined doping concentration. The LED is disposed on the composite substrate. The diode structure is used for sensing the heat emitted from the LED.

    摘要翻译： 提供了一种发光二极管（LED）结构，其制造方法和LED模块。 LED结构具有温度检测功能。 LED结构包括复合衬底和LED。 复合衬底包括其P型半导体区域或N型半导体区域具有预定掺杂浓度的二极管结构。 二极管结构是温度传感器，温度传感器的灵敏度基于预定的掺杂浓度。 LED设置在复合基板上。 二极管结构用于感测从LED发出的热量。

    LED structure, manufacturing method thereof and LED module
    26.
    发明授权
    LED structure, manufacturing method thereof and LED module 有权
    LED结构，其制造方法和LED模块

    公开(公告)号：US08304785B2

    公开(公告)日：2012-11-06

    申请号：US12566943

    申请日：2009-09-25

    申请人： Chih-Tsung Shih ,  Chen-Peng Hsu ,  Hung-Lieh Hu

    发明人： Chih-Tsung Shih ,  Chen-Peng Hsu ,  Hung-Lieh Hu

    IPC分类号： H01L27/15

    CPC分类号： H01L25/167 ,  H01L33/486 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A light emitting diode (LED) structure, a manufacturing method thereof and a LED module are provided. The LED structure has temperature sensing function. The LED structure comprises a composite substrate and an LED. The composite substrate comprises a diode structure whose P-type semiconductor region or N-type semiconductor region has a predetermined doping concentration. The diode structure is a temperature sensor, and the sensitivity of the temperature sensor is based on the predetermined doping concentration. The LED is disposed on the composite substrate. The diode structure is used for sensing the heat emitted from the LED.

    摘要翻译： 提供了一种发光二极管（LED）结构，其制造方法和LED模块。 LED结构具有温度检测功能。 LED结构包括复合衬底和LED。 复合衬底包括其P型半导体区域或N型半导体区域具有预定掺杂浓度的二极管结构。 二极管结构是温度传感器，温度传感器的灵敏度基于预定的掺杂浓度。 LED设置在复合基板上。 二极管结构用于感测从LED发出的热量。

    PHOTORESIST HAVING IMPROVED EXTREME-ULTRAVIOLET LITHOGRAPHY IMAGING PERFORMANCE
    27.
    发明申请
    PHOTORESIST HAVING IMPROVED EXTREME-ULTRAVIOLET LITHOGRAPHY IMAGING PERFORMANCE 有权
    具有改进的超级 - 超紫外线成像性能的光电子器件

    公开(公告)号：US20120219897A1

    公开(公告)日：2012-08-30

    申请号：US13033725

    申请日：2011-02-24

    申请人： Shu-Hao Chang ,  Tsiao-Chen Wu ,  Chih-Tsung Shih

    发明人： Shu-Hao Chang ,  Tsiao-Chen Wu ,  Chih-Tsung Shih

    IPC分类号： G03F7/004 ,  G03F7/20 ,  C07C309/63

    CPC分类号： G03F7/038 ,  C07C309/65 ,  C07C381/12 ,  G03F7/0045 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/20

    摘要： Provided is a photoresist that includes a polymer is free of a aromatic group and a photo acid generator (PAG) that has less than three aromatic groups. In an embodiment, the PAG includes an anion component and a cation component. The anion component has one of the following chemical formulas: R31C—CR21—CR21—CR21—SO3− R31C—CR21—CR21—SO3− R31C—CR21—SO3− R31C—SO3− The cation component has one of the following chemical formulas: Wherein R1 and R2 each represent a chemical compound.

    摘要翻译： 提供了包含不含芳族基团的聚合物和具有少于三个芳族基团的光酸产生剂（PAG）的光致抗蚀剂。 在一个实施方案中，PAG包括阴离子组分和阳离子组分。 阴离子成分具有以下化学式之一：R31C-CR21-CR21-CR21-SO3-R31C-CR21-CR21-SO3-R31C-CR21-SO3-R31C-SO3-阳离子成分具有以下化学式之一： 其中R1和R2各自表示化合物。

    ELECTRO-OPTICAL MODULATOR WITH CURVING RESONANTOR
    28.
    发明申请
    ELECTRO-OPTICAL MODULATOR WITH CURVING RESONANTOR 有权
    具有弯曲谐振器的电光调制器

    公开(公告)号：US20080056636A1

    公开(公告)日：2008-03-06

    申请号：US11563034

    申请日：2006-11-24

    申请人： Chih-Tsung Shih ,  Huai-Yi Chen ,  Shiuh Chao ,  Shin-Ge Lee

    发明人： Chih-Tsung Shih ,  Huai-Yi Chen ,  Shiuh Chao ,  Shin-Ge Lee

    IPC分类号： G02F1/035

    CPC分类号： G02F1/015 ,  G02F1/3133 ,  G02F2203/15

    摘要： An electro-optical modulator includes a structural substrate having insulating layer. A waveguide layer is on the insulating layer. A resonant layer on the insulating layer has a curving rim adjacent to the waveguide layer to form an optical coupling region. A gate dielectric layer covers part of the resonant layer. A dielectric layer over the resonant layer covers the gate dielectric layer. The dielectric layer has a first opening exposing part of the resonant layer and a second opening exposing the gate dielectric layer. Part of the second opening is adjacent to the curving rim of the resonant layer. A first polysilicon layer on the exposed region of the resonant layer serves as an electrode. A second polysilicon layer over the dielectric layer fills the second opening and is in contact with the gate dielectric layer. Part of the second polysilicon layer covering the dielectric layer serves as an electrode.

    摘要翻译： 电光调制器包括具有绝缘层的结构衬底。 波导层位于绝缘层上。 绝缘层上的谐振层具有与波导层相邻的弯曲边缘，以形成光耦合区域。 栅介质层覆盖谐振层的一部分。 谐振层上的电介质层覆盖栅介质层。 电介质层具有暴露共振层的一部分的第一开口和露出栅介电层的第二开口。 第二开口的一部分与谐振层的弯曲边缘相邻。 在共振层的暴露区域上的第一多晶硅层用作电极。 电介质层上的第二多晶硅层填充第二开口并与栅介电层接触。 覆盖电介质层的第二多晶硅层的一部分用作电极。