公开(公告)号：US08158474B2

公开(公告)日：2012-04-17

申请号：US12873889

申请日：2010-09-01

Applicant: Ru-Shang Hsiao ,  Min Cao ,  Chung-Te Lin ,  Ta-Ming Kuan ,  Cheng-Tung Hsu

Inventor： Ru-Shang Hsiao ,  Min Cao ,  Chung-Te Lin ,  Ta-Ming Kuan ,  Cheng-Tung Hsu

IPC: H01L21/0243 ,  H01L23/76

CPC classification number: H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/66636 ,  H01L29/7848 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device, such as a PMOS transistor, having localized stressors is provided. Recesses are formed on opposing sides of gate electrodes such that the recesses are offset from the gate electrode by dummy spacers. The recesses are filled with a stress-inducing layer. The dummy recesses are removed and lightly-doped drains are formed. Thereafter, new spacers are formed and the stress-inducing layer is recessed. One or more additional implants may be performed to complete source/drain regions. In an embodiment, the PMOS transistor may be formed on the same substrate as one or more NMOS transistors. Dual etch stop layers may also be formed over the PMOS and/or the NMOS transistors.

Abstract translation: 提供具有局部应力源的诸如PMOS晶体管的半导体器件。 凹槽形成在栅电极的相对侧上，使得凹槽通过假间隔件从栅电极偏移。 这些凹部填充有应力诱导层。 去除虚拟凹槽并形成轻掺杂的排水沟。 此后，形成新的间隔物并且应力诱导层凹陷。 可以执行一个或多个附加植入物以完成源极/漏极区域。 在一个实施例中，PMOS晶体管可以形成在与一个或多个NMOS晶体管相同的衬底上。 也可以在PMOS和/或NMOS晶体管上形成双重蚀刻停止层。

公开(公告)号：US08051392B2

公开(公告)日：2011-11-01

申请号：US12212088

申请日：2008-09-17

Applicant: Lee-Chung Lu ,  Chung-Te Lin ,  Yen-Sen Wang ,  Yao-Jen Chuang ,  Gwan Sin Chang

Inventor： Lee-Chung Lu ,  Chung-Te Lin ,  Yen-Sen Wang ,  Yao-Jen Chuang ,  Gwan Sin Chang

IPC: G06F17/50 ,  G06F7/66 ,  G06K9/00 ,  H01L21/66

Abstract: A method for forming masks for manufacturing a circuit includes providing a design of the circuit, wherein the circuit comprises a device; performing a first logic operation to determine a first region for forming a first feature of the device; and performing a second logic operation to expand the first feature to a second region greater than the first region. The pattern of the second region may be used to form the masks.

公开(公告)号：US20080272410A1

公开(公告)日：2008-11-06

申请号：US11743519

申请日：2007-05-02

Applicant: Chung-Te Lin

Inventor： Chung-Te Lin

IPC: H01L29/76

CPC classification number: H01L21/76897 ,  H01L21/76829 ,  H01L21/76831 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

Abstract: A metal-oxide-semiconductor field-effect transistor (MOSFET) having self-aligned spacer contacts is provided. In accordance with embodiments of the present invention, a transistor, having a gate electrode and source/drain regions formed on opposing sides of the gate electrode, is covered with a first dielectric layer. A first contact opening is formed in the first dielectric layer to expose at least a portion of one of the source/drain regions. A second dielectric layer is formed over the first dielectric layer. Thereafter, an inter-layer dielectric layer is formed over the second dielectric layer and a second contact opening is formed through the inter-layer dielectric layer. In an embodiment, an etch-back process may be performed on the second dielectric layer prior to forming the inter-layer dielectric layer.

Abstract translation: 提供了具有自对准间隔触点的金属氧化物半导体场效应晶体管（MOSFET）。 根据本发明的实施例，具有形成在栅电极的相对侧上的栅电极和源极/漏极区的晶体管被​​第一介电层覆盖。 在第一电介质层中形成第一接触开口以暴露源/漏区之一的至少一部分。 在第一电介质层上形成第二电介质层。 此后，在第二电介质层上形成层间电介质层，通过层间电介质层形成第二接触开口。 在一个实施例中，可以在形成层间电介质层之前在第二电介质层上执行回蚀工艺。

公开(公告)号：US20060292770A1

公开(公告)日：2006-12-28

申请号：US11290914

申请日：2005-11-30

Applicant: I-Lu Wu ,  Chung-Te Lin ,  Tan-Chen Lee

Inventor： I-Lu Wu ,  Chung-Te Lin ,  Tan-Chen Lee

IPC: H01L21/337 ,  H01L21/8238

CPC classification number: H01L21/84 ,  H01L21/823807 ,  H01L27/1203 ,  H01L27/1207 ,  H01L29/785

Abstract: Methods and structures for CMOS devices with hybrid crystal orientations using double SOI substrates is provided. In accordance with preferred embodiments, a manufacturing sequence includes the steps of forming an SOI silicon epitaxy layer after the step of forming shallow trench isolation regions. The preferred sequence allows hybrid SOI CMOS fabrication without encountering problems caused by forming STI regions after epitaxy. A preferred device includes an NFET on a {100} crystal orientation and a PFET on a {110} crystal orientation. An NMOS channel may be oriented along the direction, which is the direction of maximum electron mobility for a {100} substrate. A PMOS channel may be oriented along the direction, which is the direction where hole mobility is maximum for a {110} substrate.

Abstract translation: 提供了使用双重SOI衬底的具有混合晶体取向的CMOS器件的方法和结构。 根据优选实施例，制造顺序包括在形成浅沟槽隔离区的步骤之后形成SOI硅外延层的步骤。 优选的顺序允许混合SOI CMOS制造，而不会遇到在外延后形成STI区域引起的问题。 优选的器件包括{100}晶体取向的NFET和{110}晶体取向的PFET。 可以沿着<100>方向取向NMOS沟道，这是{100}衬底的最大电子迁移率的方向。 可以沿着<110>方向取向PMOS沟道，这是{110}衬底的空穴迁移率最大的方向。

公开(公告)号：US06287926B1

公开(公告)日：2001-09-11

申请号：US09253297

申请日：1999-02-19

Applicant: Chu-Wei Hu ,  Jiue-Wen Weng ,  Chung-Te Lin ,  So-Wein Kuo

Inventor： Chu-Wei Hu ,  Jiue-Wen Weng ,  Chung-Te Lin ,  So-Wein Kuo

IPC: H01L21336

CPC classification number: H01L29/66492 ,  H01L21/26586 ,  H01L29/1083 ,  H01L29/6653 ,  H01L29/66537 ,  H01L29/66553 ,  H01L29/66621 ,  H01L29/7834

Abstract: A method for creating a self-aligned channel implant with elevated source/drain areas. Forming a thin dielectric layer on top of a silicon substrate, a thick layer of oxide is deposited over this dielectric. An opening is exposed and etched through the layer of oxide, through the dielectric and into the underlying silicon substrate creating a shallow trench in the substrate. By performing the channel implant LDD implant, pocket implant, forming the gate spacers and electrode, removing the thick layer of oxide and forming the S/D regions a gate electrode has been created with elevated S/D regions. By forming the gate spacers, performing channel implant, forming the gate electrode, removing the thick layer of oxide and performing S/D implant a gate electrode has been created with elevated S/D regions and disposable spacers. By forming the gate spacers and the gate electrode, removing the thick layer of oxide and performing S/D implant a gate electrode has been created with elevated S/D regions and spacers where the gate poly protrudes above the spacers thus enhancing the formation of silicide.

Abstract translation: 一种用于产生具有升高的源极/漏极区域的自对准沟道植入物的方法。 在硅衬底的顶部形成薄的电介质层，在该电介质上沉积厚层氧化物。 将开口暴露并蚀刻通过氧化物层，通过电介质并进入下面的硅衬底，在衬底中形成浅沟槽。 通过执行通道注入LDD注入，口袋注入，形成栅极间隔物和电极，移除厚层氧化物并形成S / D区域，栅极电极已经产生了升高的S / D区域。 通过形成栅极间隔物，进行沟道注入，形成栅电极，去除厚层氧化物并执行S / D注入，已经产生了具有升高的S / D区域和一次性间隔物的栅电极。 通过形成栅极间隔物和栅电极，去除厚层氧化物并进行S / D注入，已经产生了具有升高的S / D区域和间隔物的栅电极，其中栅极聚合物突出在间隔物上方，从而增强了硅化物的形成 。

公开(公告)号：US6063695A

公开(公告)日：2000-05-16

申请号：US192451

申请日：1998-11-16

Applicant: Chung-Te Lin ,  Chin-Hsiung Ho ,  Hsueh-Liang Chiu ,  So-Wein Kuo

Inventor： Chung-Te Lin ,  Chin-Hsiung Ho ,  Hsueh-Liang Chiu ,  So-Wein Kuo

IPC: H01L21/304 ,  H01L23/544 ,  H01L21/301

CPC classification number: H01L23/544 ,  H01L21/3043 ,  H01L2223/54433 ,  H01L2223/54493 ,  H01L2924/0002 ,  Y10S148/028 ,  Y10S438/94

Abstract: A process for the formation of deep clear laser marks on silicon wafers is described. Tall ridges of material which is erupted from the wafer surface during the deep laser penetration form adjacent to the marks. These ridges are of the order of 3 to 15 microns in height and must be removed prior to subsequent wafer processing to avoid fragmentation causing scratches and particulate contamination. The process of the invention deposits a non-conformal layer of photoresist or other flowable material on the wafer. The peaks of the ridges protrude above the surface of the conformal layer be a significant amount and are then etched away using an aqueous silicon etch. The non-conformal layer protects the wafer surface from the silicon etch so that only the ridges are removed. After the ridges are etched, the non-conformal layer is removed leaving residual ridges of a height less than or equal to the thickness of the conformal layer.

Abstract translation: 描述了在硅晶片上形成深度清晰的激光标记的工艺。 在深度激光穿透期间从晶片表面喷出的与标记相邻的材料的高隆起。 这些脊的高度为3至15微米的数量级，并且必须在随后的晶片加工之前被去除，以避免碎片引起划痕和颗粒污染。 本发明的方法在晶片上沉积光致抗蚀剂或其它可流动材料的非共形层。 突起在保形层表面之上的脊的峰值是相当大的量，然后使用含水硅蚀刻蚀刻掉。 非保形层保护晶片表面免受硅蚀刻，从而仅去除脊。 在蚀刻脊之后，去除非共形层，留下高度小于或等于共形层厚度的残留脊。

公开(公告)号：US08389316B2

公开(公告)日：2013-03-05

申请号：US13089765

申请日：2011-04-19

Applicant: Yen-Sen Wang ,  Chung-Te Lin ,  Min Cao ,  Sheng-Jier Yang

Inventor： Yen-Sen Wang ,  Chung-Te Lin ,  Min Cao ,  Sheng-Jier Yang

IPC: H01L21/00

CPC classification number: H01L29/78 ,  H01L21/76802 ,  H01L21/76829 ,  H01L29/7843

Abstract: A semiconductor structure includes an active region; a gate strip overlying the active region; and a metal-oxide-semiconductor (MOS) device. A portion of the gate strip forms a gate of the MOS device. A portion of the active region forms a source/drain region of the MOS device. The semiconductor structure further includes a stressor region over the MOS device; and a stressor-free region inside the stressor region and outside the region over the active region.

Abstract translation: 半导体结构包括有源区; 覆盖有源区的栅极条; 和金属氧化物半导体（MOS）器件。 栅极条的一部分形成MOS器件的栅极。 有源区的一部分形成MOS器件的源/漏区。 半导体结构还包括MOS器件上的应力区域; 以及在应激源区域内部以及有源区域之外的区域外的无应力区域。

公开(公告)号：US08227869B2

公开(公告)日：2012-07-24

申请号：US13284594

申请日：2011-10-28

Applicant: Lee-Chung Lu ,  Chung-Te Lin ,  Yen-Sen Wang ,  Yao-Jen Chuang ,  Gwan Sin Chang

Inventor： Lee-Chung Lu ,  Chung-Te Lin ,  Yen-Sen Wang ,  Yao-Jen Chuang ,  Gwan Sin Chang

IPC: H01L21/70 ,  H01L27/088 ,  H01L29/76

CPC classification number: G06F17/5068 ,  G03F1/36

Abstract: Stress engineering for PMOS and NMOS devices is obtained with a compressive stressor layer over the PMOS device, wherein the compressive stressor layer has the shape of a polygon when viewed from a top down perspective, and wherein the polygon includes a recess defined in its periphery. The NMOS device has a tensile stress layer wherein the tensile stressor layer has the shape of a polygon when viewed from the top down perspective, wherein the polygon includes a protrusion in its periphery, the protrusion extending into the recess of the first stressor layer. Thus, stress performance for both devices can be improved without violating design rules.

Abstract translation: 通过PMOS器件上的压应力层获得用于PMOS和NMOS器件的应力工程，其中当从顶部向下观察时，压应力层具有多边形的形状，并且其中多边形包括限定在其周边的凹部。 NMOS器件具有拉伸应力层，其中从顶部向下观察时，拉伸应力层具有多边形的形状，其中多边形包括在其周边的突起，突出部延伸到第一应力层的凹部中。 因此，可以在不违反设计规则的情况下改善两种装置的应力性能。

公开(公告)号：US08122394B2

公开(公告)日：2012-02-21

申请号：US12212088

申请日：2008-09-17

Applicant: Lee-Chung Lu ,  Chung-Te Lin ,  Yen-Sen Wang ,  Yao-Jen Chuang ,  Gwan Sin Chang

Inventor： Lee-Chung Lu ,  Chung-Te Lin ,  Yen-Sen Wang ,  Yao-Jen Chuang ,  Gwan Sin Chang

IPC: G06F17/50 ,  G06F7/66 ,  G06K9/00 ,  H01L21/66

CPC classification number: G06F17/5068 ,  G03F1/36

Abstract: A method for forming masks for manufacturing a circuit includes providing a design of the circuit, wherein the circuit comprises a device; performing a first logic operation to determine a first region for forming a first feature of the device; and performing a second logic operation to expand the first feature to a second region greater than the first region. The pattern of the second region may be used to form the masks.

Abstract translation: 用于形成用于制造电路的掩模的方法包括提供电路的设计，其中电路包括器件; 执行第一逻辑操作以确定用于形成所述设备的第一特征的第一区域; 以及执行第二逻辑操作以将所述第一特征扩展到大于所述第一区域的第二区域。 可以使用第二区域的图案来形成掩模。

公开(公告)号：US20110230002A1

公开(公告)日：2011-09-22

申请号：US12726215

申请日：2010-03-17

Applicant: Ru-Shang Hsiao ,  Chung-Te Lin ,  Nai-Wen Cheng ,  Yin-Kai Liao ,  Wei Chuang Wu

Inventor： Ru-Shang Hsiao ,  Chung-Te Lin ,  Nai-Wen Cheng ,  Yin-Kai Liao ,  Wei Chuang Wu

IPC: H01L21/26

CPC classification number: H01L21/76213 ,  H01L21/26513 ,  H01L21/26533 ,  H01L31/103 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of forming an integrated circuit structure includes providing a silicon substrate, and implanting a p-type impurity into the silicon substrate to form a p-type region. After the step of implanting, performing an anneal to form a silicon oxide region, with a portion of the p-type region converted to the silicon oxide region.

Abstract translation: 形成集成电路结构的方法包括提供硅衬底，并将p型杂质注入到硅衬底中以形成p型区域。 在注入步骤之后，进行退火以形成氧化硅区域，其中一部分p型区域转换为氧化硅区域。