公开(公告)号：US07462982B2

公开(公告)日：2008-12-09

申请号：US10752560

申请日：2004-01-08

Applicant: Byoung-lyong Choi ,  Eun-kyung Lee ,  Jun-young Kim

Inventor： Byoung-lyong Choi ,  Eun-kyung Lee ,  Jun-young Kim

IPC: H01L33/00

CPC classification number: H01L27/156

Abstract: A flat panel display is provided. The flat panel display includes a silicon light-emitting device panel having a two-dimensional array of silicon light-emitting devices formed on an n- or p-type silicon-based substrate, and a fluorescent layer formed on the front surface of the silicon light-emitting device panel and emitting visible light after being excited by light emitted from the silicon light-emitting devices, wherein each of the silicon light-emitting devices comprises: a doping region formed on a surface of the substrate in such a way that the substrate is doped with a predetermined dopant of the opposite type to the substrate to a depth so that recombination of electron-hole pairs by quantum confinement effect at a p-n junction leads to light emission; and electrodes patterned on the substrate to allow the silicon light-emitting devices to emit light according to an image signal. The flat panel display includes the low-priced silicon light-emitting device panel having a two dimensional array of the silicon light-emitting devices formed on the inexpensive silicon-based substrate through series semiconductor manufacture processes. Therefore, the flat panel display can be manufactured at low cost. Furthermore, unlike a plasma display panel, a high voltage or a gas sealing process for discharge is not required, thereby increasing stability and reliability.

Abstract translation: 提供平板显示器。 平板显示器包括具有形成在n型或p型硅基衬底上的硅发光器件的二维阵列的硅发光器件面板和形成在硅的前表面上的荧光层 发光器件面板，并且在从所述硅发光器件发射的光激发之后发射可见光，其中每个所述硅发光器件包括：在所述衬底的表面上形成的掺杂区域， 衬底以与衬底相反的类型的预定掺杂剂掺杂到深度，使得通过在pn结处的量子限制效应的电子 - 空穴对的复合导致发光; 以及在基板上图案化的电极，以允许硅发光器件根据图像信号发光。 平板显示器包括具有通过串联半导体制造工艺在便宜的硅基基板上形成的硅发光器件的二维阵列的低价硅发光器件面板。 因此，可以以低成本制造平板显示器。 此外，与等离子体显示面板不同，不需要用于放电的高电压或气体密封处理，从而提高稳定性和可靠性。

公开(公告)号：US20080227230A1

公开(公告)日：2008-09-18

申请号：US12081367

申请日：2008-04-15

Applicant: Eun-kyung Lee ,  Byoung-lyong Choi

Inventor： Eun-kyung Lee ,  Byoung-lyong Choi

IPC: H01L33/00

CPC classification number: B82Y20/00 ,  H01S5/026 ,  H01S5/041 ,  H01S5/18 ,  H01S5/34

Abstract: A quantum dot vertical capacity surface emitting laser (QD-VCSEL) and a method of manufacturing the same are provided. The QD-VCSEL includes a substrate, a lower distributed brag reflector (DBR) mirror formed on the substrate, an electron transport layer (ETL) formed on the lower DBR mirror, an emitting layer (EML) formed of nano-particle type group II-VI compound semiconductor quantum dots on the ETL, a hole transport layer (HTL) formed on the EML, and an upper DBR mirror formed on the HTL.

Abstract translation: 提供量子点垂直容量表面发射激光器（QD-VCSEL）及其制造方法。 QD-VCSEL包括基板，形成在基板上的下分布式布拉格反射镜（DBR）反射镜，形成在下DBR反射镜上的电子传输层（ETL），由纳米颗粒型II组形成的发射层（EML） -VI化合物半导体量子点，在EML上形成的空穴传输层（HTL）和形成在HTL上的上DBR反射镜。

公开(公告)号：US20080119101A1

公开(公告)日：2008-05-22

申请号：US11603739

申请日：2006-11-22

Applicant: Eun Kyung Lee ,  Edwin Lee Haines ,  Douglas Brooks Deans ,  Peter Earl Radding ,  Jenny Zhaoxia Yu

Inventor： Eun Kyung Lee ,  Edwin Lee Haines ,  Douglas Brooks Deans ,  Peter Earl Radding ,  Jenny Zhaoxia Yu

IPC: D03D13/00

CPC classification number: B65G15/34 ,  B65G15/02 ,  Y10T442/3179 ,  Y10T442/3472

Abstract: A reinforced conveyor belt has a plurality of fabric plies. One of the plies is an interwoven ply comprised of two layers of weft cords and a plurality of warp cords interweaving through the two layers of weft cords. Each warp cord has the following repeating weave pattern of passing over at least two but not more than five weft cords in the first weft layers, passing between the two weft layers for a distance of at least two weft cords, and passing under at least two but nor more than five weft cords in the second weft layer.

Abstract translation: 增强输送带具有多个织物层。 其中一层是由两层纬纱线组成的交织层，和穿过两层纬纱线的多根经线。 每个经线具有以下重复编织图案，其在第一纬纱层中穿过至少两根但不多于五根纬纱线，在两根纬纱层之间穿过至少两根纬纱线的距离，并在至少两根纬纱之下穿过 但在第二纬纱层中也不得超过五根纬线。

公开(公告)号：USD561222S1

公开(公告)日：2008-02-05

申请号：US29265854

申请日：2006-09-07

Applicant: Seung Seup Yoo ,  Eun Kyung Lee ,  Sung Hwa Chang

Designer： Seung Seup Yoo ,  Eun Kyung Lee ,  Sung Hwa Chang

公开(公告)号：US07279202B2

公开(公告)日：2007-10-09

申请号：US10928154

申请日：2004-08-30

Applicant: Eun Kyung Lee ,  Jee Hwan Jang ,  Jong Seob Kim ,  Ji Young Jong ,  Hyung Soo Cho

Inventor： Eun Kyung Lee ,  Jee Hwan Jang ,  Jong Seob Kim ,  Ji Young Jong ,  Hyung Soo Cho

IPC: C09K19/34 ,  C09K19/12 ,  C07C25/13

CPC classification number: C09K19/12 ,  C09K19/3003 ,  C09K2019/123 ,  C09K2019/124 ,  C09K2019/3025 ,  Y10T428/10 ,  Y10T428/1036

Abstract: A vertical alignment liquid crystalline compound containing a laterally substituted aromatic cyclic moiety. The liquid crystalline compound has a wide temperature range of the nematic phase, a high optical anisotropy and a high negative dielectric anisotropy. In addition, since the rotation viscosity and the K33/K11 ratio of the liquid crystalline compound are maintained at a low level, the liquid crystalline compound can be effectively used as a liquid crystalline medium having good image quality and a high response speed even when applied to thin liquid crystalline cells.

Abstract translation: 含有横向取代的芳环部分的垂直取向液晶化合物。 液晶化合物具有宽的向列相的温度范围，高的光学各向异性和高的负介电各向异性。 此外，由于液晶化合物的旋转粘度和K33 / K11比保持在低水平，所以液晶化合物即使在施加时也可以有效地用作具有良好图像质量和高响应速度的液晶介质 到薄的液晶细胞。

公开(公告)号：US20070181873A1

公开(公告)日：2007-08-09

申请号：US11581112

申请日：2006-10-16

Applicant: Hyun Sik Moon ,  Eun Jeong Jeong ,  Eun Kyung Lee ,  Sang Yoon Lee ,  Jung Han Shin ,  Kyung Seok Son

Inventor： Hyun Sik Moon ,  Eun Jeong Jeong ,  Eun Kyung Lee ,  Sang Yoon Lee ,  Jung Han Shin ,  Kyung Seok Son

IPC: H01L29/08

CPC classification number: H01L51/052 ,  C08G77/12 ,  C08G77/16 ,  C08G77/18 ,  C08G77/20 ,  C08G77/24 ,  C08G77/70 ,  C08L83/04 ,  H01L51/0537 ,  C08L2666/44

Abstract: Example embodiments of the present invention relate to an organic-inorganic hybrid polymer having capped terminal hydroxyl groups and an organic insulator composition including the hybrid polymer and methods thereof. The organic-inorganic hybrid polymer may be prepared by capping terminal hydroxyl groups of silanol moieties that do not participate in the formation of an intermolecular network in an organic-inorganic hybrid material, with an organosilane compound. The organic-inorganic hybrid polymer may increase the hysteresis and physical properties of an organic thin film transistor. The organic-inorganic hybrid polymer may be more effectively utilized in the manufacture of liquid crystal displays (LCDs).

Abstract translation: 本发明的实施例涉及具有封端末端羟基的有机 - 无机杂化聚合物和包含该杂化聚合物的有机绝缘体组合物及其方法。 有机 - 无机杂化聚合物可以通过用有机 - 无机混合材料与有机硅烷化合物封端不参与有机 - 无机杂化材料形成分子间网络的硅烷醇部分的末端羟基来制备。 有机 - 无机杂化聚合物可以增加有机薄膜晶体管的滞后和物理性能。 有机 - 无机杂化聚合物可以更有效地用于制造液晶显示器（LCD）。

公开(公告)号：US07253491B2

公开(公告)日：2007-08-07

申请号：US10502765

申请日：2002-10-16

Applicant: Eun-Kyung Lee ,  Byoung-Lyong Choi ,  Jun-Young Kim

Inventor： Eun-Kyung Lee ,  Byoung-Lyong Choi ,  Jun-Young Kim

IPC: H01L31/06 ,  H01L27/14 ,  H01L31/00

CPC classification number: H01L31/028 ,  H01L31/035281 ,  H01L31/068 ,  H01L31/103 ,  Y02E10/547

Abstract: A silicon light-receiving device is provided. In the device, a substrate is based on n-type or p-type silicon. A doped region is ultra-shallowly doped with the opposite type dopant to the dopant type of the substrate on one side of the substrate so that a photoelectric conversion effect for light in a wavelength range of 100-1100 nm is generated by a quantum confinement effect in the p-n junction with the substrate. First and second electrodes are formed on the substrate so as to be electrically connected to the doped region. Due to the ultra-shallow doped region on the silicon substrate, a quantum confinement effect is generated in the p-n junction. Even though silicon is used as a semiconductor material, the quantum efficiency of the silicon light-receiving device is far higher than that of a conventional solar cell, owing to the quantum confinement effect. The silicon light-receiving device can also be formed to absorb light in a particular or large wavelength band, and used as a solar cell.

Abstract translation: 提供硅光接收装置。 在该器件中，衬底基于n型或p型硅。 掺杂区域在衬底的一侧上与衬底的掺杂剂类型相反的掺杂剂超浅掺杂，使得通过量子限制效应产生在100-1100nm的波长范围内的光的光电转换效应 在与基板的pn结中。 第一和第二电极形成在衬底上，以便与掺杂区电连接。 由于硅衬底上的超浅掺杂区域，在p-n结中产生量子限制效应。 即使使用硅作为半导体材料，由于量子限制效应，硅光接收装置的量子效率远远高于常规太阳能电池的量子效率。 硅光接收装置也可以形成为吸收特定或大波长带中的光，并用作太阳能电池。

公开(公告)号：US20070166871A1

公开(公告)日：2007-07-19

申请号：US11508925

申请日：2006-08-24

Applicant: Eun Jeong Jeong ,  Joo Young Kim ,  Hyun Sik Moon ,  Bang Lin Lee ,  Kook Min Han ,  Eun Kyung Lee

Inventor： Eun Jeong Jeong ,  Joo Young Kim ,  Hyun Sik Moon ,  Bang Lin Lee ,  Kook Min Han ,  Eun Kyung Lee

IPC: H01L51/40 ,  C07D417/14 ,  C07D497/14

CPC classification number: C07D495/04 ,  C07D417/14 ,  H01L51/0545 ,  H01L51/5048

Abstract: Disclosed herein are NPN-type low molecular aromatic ring compounds, organic semiconductor layers formed from such compounds that exhibit improved electrical stability and methods of forming such layers using solution-based processes, for example, spin coating processes performed at or near room temperature. These NPN-type compounds may be used, either singly or in combination, for fabricating organic semiconductor layers in electronic devices. The NPN-type aromatic ring compounds according to example embodiments may be deposited as a solution on a range of substrates to form a coating film that is then subjected to a thermal treatment to form a semiconductor thin film across large substrate surfaces that exhibits reduced leakage currents relative to conventional PNP-type organic semiconductor materials, thus improving the electrical properties of the resulting devices.

Abstract translation: 本文公开了NPN型低分子芳环化合物，由这些化合物形成的有机半导体层，其表现出改进的电稳定性，并且使用基于溶液的方法形成这种层的方法，例如在室温或室温附近进行的旋涂方法。 这些NPN型化合物可以单独或组合地用于制造电子器件中的有机半导体层。 根据示例性实施方案的NPN型芳环化合物可以作为溶液沉积在一系列基底上以形成涂膜，然后对其进行热处理以在跨越大的衬底表面形成半导体薄膜，该衬底表面具有减小的漏电流 相对于常规PNP型有机半导体材料，从而改善所得器件的电性能。

公开(公告)号：US07157741B2

公开(公告)日：2007-01-02

申请号：US10784967

申请日：2004-02-25

Applicant: Jun-young Kim ,  Byoung-lyong Choi ,  Eun-kyung Lee

Inventor： Jun-young Kim ,  Byoung-lyong Choi ,  Eun-kyung Lee

IPC: H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L31/153

CPC classification number: H01L27/156 ,  H01L31/125 ,  H01L33/34

Abstract: A silicon optoelectronic device and an optical transceiver, wherein the silicon optoelectronic device includes an n- or p-type silicon-based substrate and a doped region formed in a first surface of the substrate and doped to an opposite type from that of the substrate. The doped region provides photoelectrical conversion. The silicon optoelectronic device includes a light-emitting device section and a light-receiving device section. These sections use the doped region in common and are formed in the first surface of the substrate. The silicon optoelectronic device has an internal amplifying circuit, can selectively perform emission and detection of light, and can control the duration of emission and detection of light.

Abstract translation: 硅光电子器件和光收发器，其中硅光电器件包括n型或p型硅基衬底和形成在衬底的第一表面中并掺杂成与衬底相反的类型的掺杂区域。 掺杂区域提供光电转换。 硅光电子器件包括发光器件部分和光接收器件部分。 这些部分共同使用掺杂区域并形成在衬底的第一表面中。 硅光电子器件具有内部放大电路，可以选择性地执行光的发射和检测，并且可以控制发光和光的检测持续时间。

公开(公告)号：USD531653S1

公开(公告)日：2006-11-07

申请号：US29227881

申请日：2005-04-15

Applicant: Eun Kyung Lee

Designer： Eun Kyung Lee