公开(公告)号：US07713769B2

公开(公告)日：2010-05-11

申请号：US11963558

申请日：2007-12-21

Applicant: Hung-Cheng Lin ,  Chia-Ming Lee ,  Jen-Inn Chyi

Inventor： Hung-Cheng Lin ,  Chia-Ming Lee ,  Jen-Inn Chyi

IPC: H01L21/46 ,  H01L21/461 ,  H01L21/8252 ,  H01L27/15

CPC classification number: H01L33/22

Abstract: The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer on carved regions; the carved region is selectively etched to form a plurality of concave zones and form a plurality of convex zones; a semiconductor layer structure is epitaxially grown on the element regions and carved regions of the substrate; the semiconductor layer structure on the element regions is fabricated into a LED element with a photolithographic process.

Abstract translation: 本发明公开了一种发光二极管结构及其制造方法。 在本发明中，将基板放置在溶液中以在雕刻区域上形成化学反应层; 选择性地蚀刻雕刻区域以形成多个凹陷区域并形成多个凸区域; 在衬底的元件区域和雕刻区域上外延生长半导体层结构; 通过光刻工艺将元件区域上的半导体层结构制成LED元件。

公开(公告)号：US20090294756A1

公开(公告)日：2009-12-03

申请号：US12538400

申请日：2009-08-10

Applicant: Chia-Ming Lee ,  Hung-Cheng Lin ,  Jen-Inn Chyi

Inventor： Chia-Ming Lee ,  Hung-Cheng Lin ,  Jen-Inn Chyi

IPC: H01L29/06 ,  H01L33/00

CPC classification number: H01L33/12 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02647 ,  H01L21/02658 ,  H01L33/22

Abstract: The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer. Next, the substrate is etched to form a plurality of concave zones and a plurality of convex zones with the chemical reaction layer overhead. Next, the chemical reaction layer is removed to form an irregular geometry of the concave zones and convex zones on the surface of the substrate. Then, a semiconductor light emitting structure is epitaxially formed on the surface of the substrate. Thereby, the present invention can achieve a light emitting diode structure having improved internal and external quantum efficiencies.

Abstract translation: 本发明公开了一种发光二极管结构及其制造方法。 在本发明中，将基板放置在溶液中以形成化学反应层。 接下来，蚀刻基板以形成具有化学反应层顶部的多个凹区域和多个凸区域。 接下来，去除化学反应层，以形成衬底表面上的凹区和凸区的不规则几何形状。 然后，在衬底的表面上外延形成半导体发光结构。 因此，本发明可以实现具有改善的内部和外部量子效率的发光二极管结构。

公开(公告)号：US20090159871A1

公开(公告)日：2009-06-25

申请号：US11963517

申请日：2007-12-21

Applicant: Chia-Ming LEE ,  Hung-Cheng Lin ,  Jen-Inn Chyi

Inventor： Chia-Ming LEE ,  Hung-Cheng Lin ,  Jen-Inn Chyi

IPC: H01L33/00

CPC classification number: H01L33/12 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02647 ,  H01L21/02658 ,  H01L33/22

Abstract: The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer. Next, the substrate is etched to form a plurality of concave zones and a plurality of convex zones with the chemical reaction layer overhead. Next, the chemical reaction layer is removed to form an irregular geometry of the concave zones and convex zones on the surface of the substrate. Then, a semiconductor light emitting structure is epitaxially formed on the surface of the substrate. Thereby, the present invention can achieve a light emitting diode structure having improved internal and external quantum efficiencies.

公开(公告)号：US20090159870A1

公开(公告)日：2009-06-25

申请号：US11961478

申请日：2007-12-20

Applicant: Hung-Cheng Lin ,  Chia-Ming Lee ,  Jen-Inn Chyi

Inventor： Hung-Cheng Lin ,  Chia-Ming Lee ,  Jen-Inn Chyi

IPC: H01L33/00

CPC classification number: H01L33/10 ,  H01L33/20

Abstract: The present invention discloses a light emitting diode (LED) element and a method for fabricating the same, which can promote light extraction efficiency of LED, wherein a substrate is etched to obtain basins with inclined natural crystal planes, and an LED epitaxial structure is selectively formed inside the basin. Thereby, an LED element having several inclines is obtained. Via the inclines, the probability of total internal reflection is reduced, and the light extraction efficiency of LED is promoted.

Abstract translation: 本发明公开了一种发光二极管（LED）元件及其制造方法，其可以提高LED的光提取效率，其中蚀刻基板以获得具有倾斜的自然晶体面的池，并且LED外延结构选择性地 形成在盆地内。 由此，得到具有多个倾斜的LED元件。 通过倾斜，全内反射的概率降低，LED的光提取效率得到提升。

公开(公告)号：US08453916B2

公开(公告)日：2013-06-04

申请号：US13004437

申请日：2011-01-11

Applicant: Shao-Chung Hu ,  Hsing Hung ,  Hung-Cheng Lin ,  I-Chiao Lin ,  Chien-Min Sung

Inventor： Shao-Chung Hu ,  Hsing Hung ,  Hung-Cheng Lin ,  I-Chiao Lin ,  Chien-Min Sung

IPC: B23K31/02 ,  B22F7/00

CPC classification number: C09K5/00 ,  B32B5/16 ,  B32B15/20 ,  B32B2264/10 ,  B32B2307/302 ,  H01L23/3732 ,  H01L23/3733 ,  H01L23/3736 ,  H01L2924/0002 ,  Y10T428/25 ,  H01L2924/00

Abstract: A thermal conduction device and a method for fabricating the same are disclosed. Firstly, arrange a plurality of diamond particles on a plane according to a predetermined pattern to form a diamond particle monolayer. Next, apply a forming process on a metal material such that the metal material forms a metal matrix wrapping the diamond particles to form a composite body including the diamond particle monolayer embedded in the metal matrix. Next, stack a plurality of the composite bodies and perform a heating process to join the metal matrixes to each other to form the thermal conduction device. The device is characterized in arranging diamond particles on a plane to form a two-dimensional monolayer structure and manufactured via assembling the two-dimensional monolayer structures to form a three-dimensional multilayer structure. By controlling the arrangement of the diamond particles, the thermal conduction device can have superior thermal conduction performance.

Abstract translation: 公开了一种导热装置及其制造方法。 首先，根据预定图案在平面上布置多个金刚石颗粒以形成金刚石颗粒单层。 接下来，在金属材料上施加成形工艺，使得金属材料形成包裹金刚石颗粒的金属基体，以形成包含嵌入在金属基体中的金刚石颗粒单层的复合体。 接下来，堆叠多个复合体并进行加热处理以将金属基体彼此接合以形成导热装置。 该装置的特征在于在平面上布置金刚石颗粒以形成二维单层结构，并通过组装二维单层结构制造以形成三维多层结构。 通过控制金刚石颗粒的布置，导热装置可以具有优异的导热性能。

公开(公告)号：US20090298213A1

公开(公告)日：2009-12-03

申请号：US12538427

申请日：2009-08-10

Applicant: Chia-Ming LEE ,  Hung-Cheng Lin ,  Jen-Inn Chyi

Inventor： Chia-Ming LEE ,  Hung-Cheng Lin ,  Jen-Inn Chyi

IPC: H01L33/00

CPC classification number: H01L33/12 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02647 ,  H01L21/02658 ,  H01L33/22

Abstract: The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer. Next, the substrate is etched to form a plurality of concave zones and a plurality of convex zones with the chemical reaction layer overhead. Next, the chemical reaction layer is removed to form an irregular geometry of the concave zones and convex zones on the surface of the substrate. Then, a semiconductor light emitting structure is epitaxially formed on the surface of the substrate. Thereby, the present invention can achieve a light emitting diode structure having improved internal and external quantum efficiencies.

公开(公告)号：US20090162999A1

公开(公告)日：2009-06-25

申请号：US12014200

申请日：2008-01-15

Applicant: Hung-Cheng LIN ,  Jen-Inn Chyi

Inventor： Hung-Cheng LIN ,  Jen-Inn Chyi

IPC: H01L21/36

CPC classification number: H01L21/0262 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/0062 ,  H01L33/06

Abstract: A method of growing nitride semiconductor material and particularly a method of growing Indium nitride is disclosed can increase surface flatness of a nitride semiconductor material and decrease density of V-defects therein. Further, the method can increase light emission efficiency of a quantum well or quantum dots of the produced LED as well as greatly increase yield. The method is also applicable to the fabrications of electronic devices made of nitride semiconductor material and diodes of high breakdown voltage for rectification. The method can greatly increase surface flatness of semiconductor material for HBT, thereby increasing quality of the produced semiconductor devices.

Abstract translation: 公开了一种生长氮化物半导体材料的方法，特别是生长氮化铟的方法可以增加氮化物半导体材料的表面平坦度并降低其中的V型缺陷的密度。 此外，该方法可以提高所产生的LED的量子阱或量子点的发光效率，并且大大提高产量。 该方法还适用于由氮化物半导体材料制成的电子器件和用于整流的高击穿电压的二极管的制造。 该方法可以大大增加用于HBT的半导体材料的表面平坦度，从而提高所制造的半导体器件的质量。

公开(公告)号：US20050226297A1

公开(公告)日：2005-10-13

申请号：US10710843

申请日：2004-08-06

Applicant: Hung-Cheng Lin ,  Jen-Inn Chyi ,  Guan-Ting Chen

Inventor： Hung-Cheng Lin ,  Jen-Inn Chyi ,  Guan-Ting Chen

IPC: H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/22

CPC classification number: H01S5/22 ,  H01S5/0425 ,  H01S5/2214

Abstract: A method of manufacturing a semiconductor laser device is provided. First, a first mask layer is formed on an epitaxial structure to define a protrudent area in a ridge structure. Thereafter, a conformal second mask layer is formed over the epitaxial structure to cover the first mask layer. A third mask layer is formed over the second mask layer. The exposed second mask layer is removed. Using the first and the third mask layers as etching masks, a portion of the epitaxial structure is removed. The third mask layer and the remaining second mask layer are removed to form the ridge structure. An insulation layer is formed on the epitaxial structure and then the first mask layer is removed to expose the top surface of the protrudent area. A conductive layer is formed on the epitaxial structure such that it contacts with the top surface of the protrudent area.

Abstract translation: 提供一种制造半导体激光器件的方法。 首先，在外延结构上形成第一掩模层以限定脊结构中的突出区域。 此后，在外延结构上形成保形第二掩模层以覆盖第一掩模层。 在第二掩模层上形成第三掩模层。 暴露的第二掩模层被去除。 使用第一和第三掩模层作为蚀刻掩模，去除外延结构的一部分。 去除第三掩模层和剩余的第二掩模层以形成脊结构。 在外延结构上形成绝缘层，然后去除第一掩模层以暴露突出区域的顶表面。 导电层形成在外延结构上，使得其与突出区域的顶表面接触。