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    System and method for aligning wafers within wafer processing equipment
    24.
    发明申请
    System and method for aligning wafers within wafer processing equipment 失效
    在晶片加工设备中对准晶片的系统和方法

    公开(公告)号：US20060096612A1

    公开(公告)日：2006-05-11

    申请号：US10982029

    申请日：2004-11-05

    申请人： Jian-Huei Feng ,  Hung-Chin Guthrie ,  Quang Le ,  James Nystrom

    发明人： Jian-Huei Feng ,  Hung-Chin Guthrie ,  Quang Le ,  James Nystrom

    IPC分类号： C23G1/00 ,  B08B3/00

    CPC分类号： B08B11/02 ,  B08B3/02 ,  H01L21/67051 ,  H01L21/68

    摘要： Systems and methods for aligning wafers within wafer processing equipment. In a first embodiment, a wafer alignment nozzle comprises a fixed cylindrical member. A moveable cylindrical member is disposed with the fixed cylindrical member in a sliding fit. The moveable cylindrical member comprises a plurality of angled fluid orifices for directing a plurality of streams of the fluid onto a surface of the wafer.

    摘要翻译： 将晶片对准晶片加工设备的系统和方法。 在第一实施例中，晶片对准喷嘴包括固定圆柱形构件。 可移动的圆柱形构件以固定的圆柱形构件滑动配合设置。 可移动圆柱形构件包括多个成角度的流体孔，用于将多个流体流引导到晶片的表面上。

    System and method for aligning wafers
    25.
    发明申请
    System and method for aligning wafers 审中-公开
    用于对准晶片的系统和方法

    公开(公告)号：US20060066333A1

    公开(公告)日：2006-03-30

    申请号：US10956801

    申请日：2004-09-30

    申请人： Jian-Huei Feng ,  Hung-Chin Guthrie ,  James Nystrom

    发明人： Jian-Huei Feng ,  Hung-Chin Guthrie ,  James Nystrom

    IPC分类号： G01R31/02

    CPC分类号： G01R31/2831 ,  G01R31/2893

    摘要： Systems and methods for aligning wafers. A first method provides for placing a wafer carrier comprising a mis-aligned wafer into an acceptance port. A wafer alignment fixture is moved relative to the wafer carrier and perpendicular to the plane of the mis-aligned wafer. The wafer alignment fixture comprises a spring action member. A force from said spring action member is exerted upon the mis-aligned wafer to achieve a desirable alignment of the mis-aligned wafer within the wafer carrier.

    摘要翻译： 用于对准晶片的系统和方法 第一种方法提供将包含错误对准的晶片的晶片载体放置在接受端口中。 晶片对准夹具相对于晶片载体移动并垂直于错误对准晶片的平面。 晶片对准夹具包括弹簧作用构件。 来自所述弹簧作用构件的力施加在错误对准的晶片上，以实现晶片载体内错误对准晶片的期望对准。

    Method for fabricating thin film magnetic heads using CMP with polishing stop layer
    26.
    发明申请
    Method for fabricating thin film magnetic heads using CMP with polishing stop layer 失效
    使用具有抛光停止层的CMP制造薄膜磁头的方法

    公开(公告)号：US20060043060A1

    公开(公告)日：2006-03-02

    申请号：US10928002

    申请日：2004-08-27

    申请人： Hung-Chin Guthrie ,  Ming Jiang ,  Hong Zhang

    发明人： Hung-Chin Guthrie ,  Ming Jiang ,  Hong Zhang

    IPC分类号： B44C1/22 ,  C23F1/00

    CPC分类号： B82Y25/00 ,  G11B5/3163 ,  G11B5/3169

    摘要： A method is described for thin film processing using a selected CMP slurry with a silicon dioxide stop layer. The slurry includes an abrasive, preferably alumina, a corrosion inhibitor, preferably benzotriazole (BTA), and an oxidizer preferably hydrogen peroxide. The method is particularly useful for fabricating thin film heads where alumina is used as the dielectric. The method can be used to planarize metal structures surrounded by alumina in magnetic heads. The alumina refill is deposited to the final target height which is slightly below the height of the metal. A thin silicon dioxide stop layer is deposited over the alumina. The CMP is executed using the selected slurry to planarize the wafer down to the stop layer. Preferably only a negligible amount of the stop layer remains and the height of the metal structure is essentially the same as the deposited height of the refilled alumina.

    摘要翻译： 描述了使用具有二氧化硅停止层的所选CMP浆料进行薄膜处理的方法。 浆料包括研磨剂，优选氧化铝，腐蚀抑制剂，优选苯并三唑（BTA）和优选过氧化氢的氧化剂。 该方法对于制造其中使用氧化铝作为电介质的薄膜头特别有用。 该方法可用于平面化由磁头中的氧化铝包围的金属结构。 氧化铝填充物沉积到稍低于金属高度的最终目标高度。 在氧化铝上沉积薄的二氧化硅阻挡层。 使用所选择的浆料执行CMP以将晶片平坦化到停止层。 优选地，仅剩下可忽略量的止挡层，并且金属结构的高度与再填充氧化铝的沉积高度基本相同。

    Methodology of chemical mechanical nanogrinding for ultra precision finishing of workpieces
    27.
    发明申请
    Methodology of chemical mechanical nanogrinding for ultra precision finishing of workpieces 失效
    化学机械纳米研磨方法用于工件超精密加工

    公开(公告)号：US20060021973A1

    公开(公告)日：2006-02-02

    申请号：US10903833

    申请日：2004-07-30

    申请人： Hung-Chin Guthrie ,  Ming Jiang

    发明人： Hung-Chin Guthrie ,  Ming Jiang

    IPC分类号： C03C15/00

    CPC分类号： C03C15/00 ,  C03C19/00 ,  G11B5/8404

    摘要： A chemical-mechanical nanogrinding process achieves near-zero pole tip recession (PTR) to minimize magnetic space loss of the head transducer to media spacing loss, alumina recession/trailing edge profile variation, and smooth surface finish with minimal smearing across multi-layers of thin films and the hard substrate to meet the requirements of high areal density head. With a fine lapping plate with a fixed-abrasive nanogrinding process, PTR can be improved to a mean of about 1.0 nm.

    摘要翻译： 化学机械纳米研磨工艺实现近零极极尖衰退（PTR），以最小化头部换能器的磁空间损失，使介质间隔损耗，氧化铝凹陷/后缘轮廓变化，以及光滑的表面光洁度，同时最小化多层 薄膜和硬质基材满足高密度面的要求。 使用具有固定研磨纳米研磨工艺的精细研磨板，PTR可以提高至约1.0nm的平均值。

    Post chemical mechanical polishing cleaning solution for 2.45T CoFeNi structures of thin film magnetic heads
    28.
    发明授权
    Post chemical mechanical polishing cleaning solution for 2.45T CoFeNi structures of thin film magnetic heads 失效
    用于2.45T薄膜磁头的CoFeNi结构的化学机械抛光清洗溶液

    公开(公告)号：US06984613B1

    公开(公告)日：2006-01-10

    申请号：US10931385

    申请日：2004-08-31

    申请人： Hung-Chin Guthrie ,  Ming Jiang ,  Nick Lara

    发明人： Hung-Chin Guthrie ,  Ming Jiang ,  Nick Lara

    IPC分类号： C11D17/00

    CPC分类号： C11D3/0073 ,  C11D9/007 ,  C11D9/30 ,  C11D11/0047

    摘要： The present invention is directed to methods for polishing and cleaning a wafer having CoFeNi structures within alumina fill to achieve corrosion-free, smooth, and planar surface. A preferred chemical mechanical polishing (CMP) method includes a CMP polishing compound including alumina abrasive particulates, 1H-Benzotriazole (BTA), and hydrogen peroxide (H2O2). A cleaning solution for CoFeNi structures in alumina fill of the present invention preferably includes 4-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, 5-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, hydrogenated 4-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, hydrogenated 5-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, sodium octanoate in a concentration range of from 5% to 10%, and water in a concentration range of from 65% to 95%. The cleaning solution is typically used with DI water to create an applied solution having a range of from 0.1% to 10% by volume of the cleaning solution.

    摘要翻译： 本发明涉及在氧化铝填充物内抛光和清洗具有CoFeNi结构的晶片以实现无腐蚀，平滑和平坦的表面的方法。 优选的化学机械抛光（CMP）方法包括CMP抛光化合物，其包括氧化铝磨粒，1H-苯并三唑（BTA）和过氧化氢（H 2 O 2 O 2）。 本发明的氧化铝填充物中的CoFeNi结构的清洗液优选含有浓度范围为1％〜5％的4-甲基-1H-苯并三唑，浓度范围为1％〜5％的5-甲基-1H-苯并三唑 5％的浓度范围为1％至5％的氢化的4-甲基-1H-苯并三唑，浓度范围为1％至5％的氢化的5-甲基-1H-苯并三唑，浓度范围为 5％至10％，浓度范围为65％至95％的水。 清洁溶液通常与去离子水一起使用以产生具有0.1至10体积％范围的清洁溶液的施用溶液。

    Run-to-run control of backside pressure for CMP radial uniformity optimization based on center-to-edge model
    30.
    发明申请
    Run-to-run control of backside pressure for CMP radial uniformity optimization based on center-to-edge model 失效
    基于中心到边缘模型的用于CMP径向均匀性优化的背侧压力的运行控制控制

    公开(公告)号：US20050239222A1

    公开(公告)日：2005-10-27

    申请号：US10831592

    申请日：2004-04-23

    申请人： Hung-Chin Guthrie ,  Ming Jiang ,  Yeak-Chong Wong

    发明人： Hung-Chin Guthrie ,  Ming Jiang ,  Yeak-Chong Wong

    IPC分类号： B24B5/00 ,  B24B37/04 ,  B24B47/02 ,  B24B49/03 ,  G01R31/26 ,  H01L21/66

    CPC分类号： B24B49/03 ,  B24B37/042

    摘要： During planarization of wafers, the thickness of a layer of a wafer is measured at a number of locations, after the wafer has been planarized by chemical mechanical polishing. The thickness measurements are used to automatically determine, from a center to edge profile model to which the measurements are fit, a parameter that controls chemical mechanical polishing, called “backside pressure.” Backside pressure is determined in some embodiments by a logic test based on the center-to-edge profile model, coefficient of determination R-square of the model, and current value of backside pressure. Note that a “backside pressure” set point is adjusted only if the fit of the measurements to the model is good, e.g. as indicated by R-square being greater than a predetermined limit. Next, the backside pressure that has been determined from the model is used in planarizing a subsequent wafer.

    摘要翻译： 在晶片的平坦化期间，在通过化学机械抛光对晶片进行平面化之后，在多个位置测量晶片层的厚度。 厚度测量用于自动确定从测量结合到的中心到边缘轮廓模型，控制称为“背侧压力”的化学机械抛光的参数。 在一些实施例中，通过基于中心到边缘轮廓模型的逻辑测试，模型的确定系数R平方和背侧压力的当前值来确定背侧压力。 注意，仅当对模型的测量的拟合良好时才调整“背侧压力”设定点。 如R平方所示大于预定极限。 接下来，将从模型确定的背面压力用于平面化后续晶片。