Method for aligning wafers within wafer processing equipment
    1.
    发明授权
    Method for aligning wafers within wafer processing equipment 失效
    在晶片处理设备内对准晶片的方法

    公开(公告)号:US08500916B2

    公开(公告)日:2013-08-06

    申请号:US10982029

    申请日:2004-11-05

    IPC分类号: B08B3/00

    摘要: Systems and methods for aligning wafers within wafer processing equipment. In a first embodiment, a wafer alignment nozzle comprises a fixed cylindrical member. A moveable cylindrical member is disposed with the fixed cylindrical member in a sliding fit. The moveable cylindrical member comprises a plurality of angled fluid orifices for directing a plurality of streams of the fluid onto a surface of the wafer.

    摘要翻译: 将晶片对准晶片加工设备的系统和方法。 在第一实施例中,晶片对准喷嘴包括固定圆柱形构件。 可移动的圆柱形构件以固定的圆柱形构件滑动配合设置。 可移动圆柱形构件包括多个成角度的流体孔,用于将多个流体流引导到晶片的表面上。

    System and method for aligning wafers within wafer processing equipment
    2.
    发明申请
    System and method for aligning wafers within wafer processing equipment 失效
    在晶片加工设备中对准晶片的系统和方法

    公开(公告)号:US20060096612A1

    公开(公告)日:2006-05-11

    申请号:US10982029

    申请日:2004-11-05

    IPC分类号: C23G1/00 B08B3/00

    摘要: Systems and methods for aligning wafers within wafer processing equipment. In a first embodiment, a wafer alignment nozzle comprises a fixed cylindrical member. A moveable cylindrical member is disposed with the fixed cylindrical member in a sliding fit. The moveable cylindrical member comprises a plurality of angled fluid orifices for directing a plurality of streams of the fluid onto a surface of the wafer.

    摘要翻译: 将晶片对准晶片加工设备的系统和方法。 在第一实施例中,晶片对准喷嘴包括固定圆柱形构件。 可移动的圆柱形构件以固定的圆柱形构件滑动配合设置。 可移动圆柱形构件包括多个成角度的流体孔,用于将多个流体流引导到晶片的表面上。

    System and method for aligning wafers
    3.
    发明申请
    System and method for aligning wafers 审中-公开
    用于对准晶片的系统和方法

    公开(公告)号:US20060066333A1

    公开(公告)日:2006-03-30

    申请号:US10956801

    申请日:2004-09-30

    IPC分类号: G01R31/02

    CPC分类号: G01R31/2831 G01R31/2893

    摘要: Systems and methods for aligning wafers. A first method provides for placing a wafer carrier comprising a mis-aligned wafer into an acceptance port. A wafer alignment fixture is moved relative to the wafer carrier and perpendicular to the plane of the mis-aligned wafer. The wafer alignment fixture comprises a spring action member. A force from said spring action member is exerted upon the mis-aligned wafer to achieve a desirable alignment of the mis-aligned wafer within the wafer carrier.

    摘要翻译: 用于对准晶片的系统和方法 第一种方法提供将包含错误对准的晶片的晶片载体放置在接受端口中。 晶片对准夹具相对于晶片载体移动并垂直于错误对准晶片的平面。 晶片对准夹具包括弹簧作用构件。 来自所述弹簧作用构件的力施加在错误对准的晶片上,以实现晶片载体内错误对准晶片的期望对准。

    Gentle chemical mechanical polishing (CMP) liftoff process
    4.
    发明授权
    Gentle chemical mechanical polishing (CMP) liftoff process 失效
    温和化学机械抛光(CMP)剥离工艺

    公开(公告)号:US07220167B2

    公开(公告)日:2007-05-22

    申请号:US11034340

    申请日:2005-01-11

    IPC分类号: B24B1/00

    摘要: A method for chemical mechanical polishing (CMP) wafers having high aspect ratio surface topography. A wafer is positioned on a plate. A polishing pad is coupled to a platen. A polishing solution (e.g., slurry) is added between the polishing pad and the wafer. CMP is performed on the wafer by creating a relative movement between the polishing pad and the wafer. The polishing pad removes substantially all residual material from the channels. To accomplish this, the polishing pad has a compressibility of at least 5% at a polishing pressure of about 4 psi.

    摘要翻译: 一种具有高纵横比表面形貌的化学机械抛光(CMP)晶片的方法。 晶片位于板上。 抛光垫联接到压板。 在抛光垫和晶片之间添加抛光溶液(例如浆料)。 通过在抛光垫和晶片之间产生相对移动来在晶片上执行CMP。 抛光垫基本上从通道中去除所有残留的材料。 为了实现这一点,抛光垫在约4psi的抛光压力下具有至少5%的压缩率。

    Gentle chemical mechanical polishing (CMP) liftoff process
    5.
    发明申请
    Gentle chemical mechanical polishing (CMP) liftoff process 失效
    温和化学机械抛光(CMP)剥离工艺

    公开(公告)号:US20060154573A1

    公开(公告)日:2006-07-13

    申请号:US11034340

    申请日:2005-01-11

    IPC分类号: B24B1/00

    摘要: A method for chemical mechanical polishing (CMP) wafers having high aspect ratio surface topography. A wafer is positioned on a plate. A polishing pad is coupled to a platen. A polishing solution (e.g., slurry) is added between the polishing pad and the wafer. CMP is performed on the wafer by creating a relative movement between the polishing pad and the wafer. The polishing pad removes substantially all residual material from the channels. To accomplish this, the polishing pad has a compressibility of at least 5% at a polishing pressure of about 4 psi.

    摘要翻译: 一种具有高纵横比表面形貌的化学机械抛光(CMP)晶片的方法。 晶片位于板上。 抛光垫联接到压板。 在抛光垫和晶片之间添加抛光溶液(例如浆料)。 通过在抛光垫和晶片之间产生相对移动来在晶片上执行CMP。 抛光垫基本上从通道中去除所有残留的材料。 为了实现这一点,抛光垫在约4psi的抛光压力下具有至少5%的压缩率。

    Copper damascene chemical mechanical polishing (CMP) for thin film head writer fabrication
    7.
    发明申请
    Copper damascene chemical mechanical polishing (CMP) for thin film head writer fabrication 失效
    铜大马士革化学机械抛光(CMP)用于薄膜头写入器制造

    公开(公告)号:US20080096389A1

    公开(公告)日:2008-04-24

    申请号:US11584027

    申请日:2006-10-20

    摘要: In one method and embodiment of the present invention, at least one coil layer is formed in a write head, using a two-slurry step of copper damascene chemical mechanical polishing method with a first slurry step removing the undesirable copper that is on top of the tantalum barrier layer and on top of the trenches and a second slurry step removing the remainder of the undesirable copper, the tantalum barrier layer, the silicon dioxide hard mask layer, the hard baked photoresist layer, the magnetic alloy such as NiFe, CoFe, or CoNiFe, and alumina insulating layer for better thin film magnetic head performances.

    摘要翻译: 在本发明的一个方法和实施例中,使用铜镶嵌化学机械抛光方法的双浆步骤,在写头中形成至少一个线圈层,其中第一浆料步骤除去位于 钽阻挡层并且在沟槽的顶部上,第二浆料步骤除去不需要的铜,钽阻挡层,二氧化硅硬掩模层,硬烘焙光致抗蚀剂层,磁性合金如NiFe,CoFe或 CoNiFe和氧化铝绝缘层,用于更好的薄膜磁头性能。

    Methods for providing run to run process control using a dynamic tuner
    8.
    发明授权
    Methods for providing run to run process control using a dynamic tuner 有权
    使用动态调谐器提供运行过程控制的方法

    公开(公告)号:US09213322B1

    公开(公告)日:2015-12-15

    申请号:US13587754

    申请日:2012-08-16

    IPC分类号: G05B13/02 G05B13/04

    摘要: Methods for providing run to run process control using a dynamic tuner are provided. Once such method includes receiving a data point for a process output parameter, determining whether the data point is within a desired range for the process output parameter, setting, when the data point is within the desired range, a dynamic lambda value equal to a preselected base lambda value, setting, when the data point is not within the desired range, the dynamic lambda value equal to a value based on the preselected base lambda value, a degree of difference between the data point and a target for the process output parameter, and a scale factor, calculating an exponentially weighted moving average using the dynamic lambda value, and adjusting the process control parameter in accordance with the exponentially weighted moving average.

    摘要翻译: 提供了使用动态调谐器提供运行过程控制运行的方法。 一旦这样的方法包括接收过程输出参数的数据点,确定数据点是否在处理输出参数的期望范围内,当数据点在期望范围内时,设置等于预选的动态λ值 基本λ值,当数据点不在期望范围内时,设置,动态λ值等于基于预选的基本λ值的值,数据点与过程输出参数的目标之间的差异程度, 和比例因子,使用动态λ值计算指数加权移动平均值,以及根据指数加权移动平均值来调整过程控制参数。

    Methods for providing asymmetric run to run control of process parameters
    9.
    发明授权
    Methods for providing asymmetric run to run control of process parameters 有权
    提供不对称运行以运行过程参数控制的方法

    公开(公告)号:US09110465B1

    公开(公告)日:2015-08-18

    申请号:US13100976

    申请日:2011-05-04

    IPC分类号: G06F19/00 G05B19/418

    摘要: Methods for providing asymmetric control of process parameters are described. One such method includes receiving a data point for the process parameter relative to the wafer, selecting a first value for a process weighting factor when the data point is consistent with a first criteria, selecting a second value for the process weighting factor when the data point is consistent with a second criteria, where the second value is not equal to the first value, calculating an exponential weighted moving average of the process parameter based on the data point and the process weighting factor, updating the process parameter with the exponential weighted moving average, and using the updated process parameter to control the process and thereby treat the wafer. The methods can use one or more weighting factor switch limits to define different areas of risk associated with a target for the process parameter.

    摘要翻译: 描述了提供工艺参数不对称控制的方法。 一种这样的方法包括接收相对于晶片的过程参数的数据点,当数据点与第一标准一致时,选择过程加权因子的第一值,当数据点 与第二标准一致,其中第二值不等于第一值,基于数据点和过程加权因子计算过程参数的指数加权移动平均值,以指数加权移动平均值更新过程参数 并且使用更新的处理参数来控制该处理,从而处理晶片。 这些方法可以使用一个或多个权重因子切换限制来定义与过程参数的目标相关联的风险的不同区域。

    Method for sintering ceramic tapes
    10.
    发明授权
    Method for sintering ceramic tapes 失效
    烧结陶瓷带的方法

    公开(公告)号:US06447712B1

    公开(公告)日:2002-09-10

    申请号:US09473475

    申请日:1999-12-28

    IPC分类号: C04B3332

    摘要: Flexible setter powder deposition sheets containing setter powders were developed for sintering of ceramic articles including tapes by an economical, fast and simple method. The sheets provide for deposition of a thin and uniform layer of setter powders on a green ceramic article after burnout of a binder in the sheet. Because of high strength and low burnout temperature, hydroxypropyl methylcellulose binder is preferred for production of these sheets. Tape cast sheets with low solids loading can be obtained by optimizing the wetting behavior of aqueous slurries on tape carrier. Setter, powder deposition sheets are of particular benefit in processing of thin ceramic tapes, particularly for processing of piezoelectric ceramic tapes. Tapes can be processed in a sandwich formed by layering setter powder deposition sheets between tapes and cover plates employed to maintain tape flatness and to reduce evaporation of volatile components of the ceramic.

    摘要翻译: 开发了含有固化剂粉末的柔性固定剂粉末沉积片,用于通过经济,快速和简单的方法烧结包括胶带的陶瓷制品。 这些片材在烧结片材中的粘合剂之后,在生坯陶瓷制品上沉积薄而均匀的固化剂粉末层。 由于强度高,烧灼温度低,因此优选羟丙基甲基纤维素粘合剂用于生产这些片材。 通过优化胶带载体上的水性浆料的润湿性能可以获得低固含量的胶带。 调色剂,粉末沉积片在加工薄陶瓷带时特别有利于特别是压电陶瓷带的加工。 胶带可以通过在用于保持胶带平整度的带和盖板之间分层固化剂粉末沉积片形成的夹层加工,并减少陶瓷挥发性组分的蒸发。