公开(公告)号：US20060284113A1

公开(公告)日：2006-12-21

申请号：US11453775

申请日：2006-06-16

Applicant: Seung-Hyuk Chang ,  I-Hun Song ,  Young-Soo Park ,  Suk-Pil Kim ,  Hoon Kim

Inventor： Seung-Hyuk Chang ,  I-Hun Song ,  Young-Soo Park ,  Suk-Pil Kim ,  Hoon Kim

IPC: G21G5/00 ,  A61N5/00

CPC classification number: G03F7/70241 ,  G03F7/70941

Abstract: An off-axis projection optical system including first and second mirrors that are off-axially arranged is provided. The tangential and sagittal radii of curvature of the first mirror may be R1t and R1s, respectively. The tangential and sagittal radii of curvature of the second mirror may be R2t and R2s, respectively. The incident angle of the beam from an object point to the first mirror 10 may be i1, and an incident angle of the beam reflected from the first mirror 10 to the second mirror 30 is i2. The values of R1t, R1s, R2t, R2s, i1 and i2 may satisfy the following Equation. R1t cos i1=R2t cos i2 R1s=R1t cos2i1 R2s=R2t cos2i2

Abstract translation: 提供了一种离轴投影光学系统，其包括非轴向布置的第一和第二反射镜。 第一反射镜的切向和矢状曲率半径可以分别为R 1t 1和R 1s 1。 第二反射镜的切向和矢状曲率半径可以分别为R 2t 2和R 2s 3。 从物点到第一反射镜10的光束的入射角度可以为1＆lt; 1＆gt;，从第一反射镜10反射到第二反射镜30的光束的入射角为 2 。 R 1，R 1，R 2，R 2，R 2，R 1，R 2， SUB＆gt;和i＆lt; 2＆gt;可以满足以下等式。 <？in-line-formula description =“In-line Formulas”end =“lead”？> R＆lt; 1t＆gt; cos＆lt; 1＆lt; 1＆lt; 2＆lt; > cos i <2> <？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end = “引线”→R 1> = R 1t＆lt; 2＆gt;＆lt; 2＆lt;＆lt; =“在线公式”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> R <2> 2t 2 “in-line-formula description =”In-line Formulas“end =”tail“？>

公开(公告)号：US20060134531A1

公开(公告)日：2006-06-22

申请号：US11274474

申请日：2005-11-16

Applicant: I-Hun Song ,  Won-Il Ryu ,  Suk-Pil Kim ,  Hoon Kim ,  Seung-Hyuk Chang ,  Won-Joo Kim ,  Young-Soo Park

Inventor： I-Hun Song ,  Won-Il Ryu ,  Suk-Pil Kim ,  Hoon Kim ,  Seung-Hyuk Chang ,  Won-Joo Kim ,  Young-Soo Park

IPC: G03C5/00 ,  G21K5/00 ,  G03F1/00

CPC classification number: G21K1/062 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24

Abstract: A mask for lithography and a method of manufacturing the same. The mask may include a substrate, a reflection layer formed of a material capable of reflecting electromagnetic rays on the substrate and an absorption pattern formed in a desired pattern such that absorbing regions with respect to electromagnetic rays and windows through which electromagnetic rays pass are formed, wherein the absorption pattern includes at least one side surface that is adjacent to the window and is inclined with respect to the reflection layer. The method may include forming a reflection layer which is formed of a material capable of reflecting electromagnetic rays on a substrate, forming an absorption layer which is formed of a material capable of absorbing electromagnetic rays on the refection layer, and patterning the absorption layer to form an absorption pattern with at least one side surface adjacent to a window that has an inclined side surface with respect to the reflection layer.

Abstract translation: 光刻用掩模及其制造方法。 掩模可以包括基板，由能够在基板上反射电磁射线的材料形成的反射层和形成为期望图案的吸收图案，使得形成相对于电磁射线通过的电磁射线和窗口的吸收区域， 其中所述吸收图案包括与所述窗口相邻并且相对于所述反射层倾斜的至少一个侧表面。 该方法可以包括形成由能够在基板上反射电磁射线的材料形成的反射层，形成由能够在反射层上吸收电磁射线的材料形成的吸收层，以及图案化吸收层以形成 具有与窗口相邻的至少一个侧表面的吸收图案，该窗口具有相对于反射层的倾斜侧表面。

公开(公告)号：US20050207219A1

公开(公告)日：2005-09-22

申请号：US11141057

申请日：2005-06-01

Applicant: Kyu-Mann Lee ,  Hyun-Jo Kim ,  Jeong-Hee Park ,  Tae-Wan Kim ,  I-Hun Song ,  Seok-Jae Chung

Inventor： Kyu-Mann Lee ,  Hyun-Jo Kim ,  Jeong-Hee Park ,  Tae-Wan Kim ,  I-Hun Song ,  Seok-Jae Chung

IPC: H01L27/105 ,  G11C11/14 ,  G11C11/15 ,  H01L21/8234 ,  H01L21/8244 ,  H01L21/8246 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L27/228 ,  B82Y10/00 ,  H01L43/08

Abstract: A method for forming an MTJ structure suitable for use in a MRAM device having a bottom electrode including a layer of platinum, ruthenium, iridium, rhodium, osmium, palladium or their oxides and having reduced surface roughness to improve the hysteresis loop characteristics of the resulting MTJ structure. The bottom electrode layer may also combine the functions of both the seeding layer and bottom electrode of the conventional two-layer structure, thereby simplifying the manufacturing process.

公开(公告)号：US06815784B2

公开(公告)日：2004-11-09

申请号：US10445828

申请日：2003-05-28

Applicant: Wan-jun Park ,  Taek-dong Lee ,  Byeong-kook Park ,  Tae-wan Kim ,  I-hun Song ,  Sang-jin Park

Inventor： Wan-jun Park ,  Taek-dong Lee ,  Byeong-kook Park ,  Tae-wan Kim ,  I-hun Song ,  Sang-jin Park

IPC: H01L2982

CPC classification number: H01L27/228 ,  B82Y10/00

Abstract: A magneto-resistive random access memory includes a MOS transistor having a first gate and source and drain junctions on a substrate, a lower electrode connected to the source junction, a first magnetic layer on the lower electrode, a dielectric barrier layer including aluminum and hafnium on the first magnetic layer which, together with the first magnetic layer, form a potential well, a second magnetic layer on the dielectric barrier layer opposite the first magnetic layer, an upper electrode on the second magnetic layer, a second gate interposed between the first gate and the lower electrode to control the magnetic data of one of the first and second magnetic layers, and a bit line positioned orthogonal to the first gate and electrically connected to the upper electrode. Improved characteristics of the barrier layer increase a magnetic resistance ratio and improve data storage capacity of the magneto-resistive random access memory.

公开(公告)号：US09419610B2

公开(公告)日：2016-08-16

申请号：US12926831

申请日：2010-12-13

Applicant: Seung-eon Ahn ,  Sung-ho Park ,  I-hun Song ,  Sang-hun Jeon

Inventor： Seung-eon Ahn ,  Sung-ho Park ,  I-hun Song ,  Sang-hun Jeon

IPC: H01L27/146 ,  H01J40/14 ,  H03K17/78 ,  H03K17/94

CPC classification number: H03K17/78 ,  H03K17/941

Abstract: Example embodiments are directed to a light-sensing circuit, a method of operating the light-sensing circuit, and a light-sensing apparatus including the light-sensing circuit. The light-sensing circuit includes a light-sensitive oxide semiconductor transistor that senses light; and a switching transistor connected to the light-sensing transistor in series and configured to output data. During a standby time, a low voltage is applied to the switching transistor and a high voltage is applied to the light-sensitive oxide semiconductor transistor, and when data is output, the high voltage is applied to the switching transistor and the low voltage is applied to the light-sensitive oxide semiconductor transistor.

Abstract translation: 示例性实施例涉及光感​​测电路，操作光感测电路的方法以及包括光感测电路的光感测设备。 感光电路包括感测光的光敏氧化物半导体晶体管; 以及串联连接到感光晶体管并被配置为输出数据的开关晶体管。 在待机时间期间，低电压被施加到开关晶体管，并且高电压被施加到光敏氧化物半导体晶体管，并且当数据被输出时，高电压被施加到开关晶体管并施加低电压 到光敏氧化物半导体晶体管。

公开(公告)号：US09362322B2

公开(公告)日：2016-06-07

申请号：US13553245

申请日：2012-07-19

Applicant: Seung-eon Ahn ,  I-hun Song ,  Sang-hun Jeon ,  Young Kim ,  Yong-woo Jeon ,  Chang-jung Kim

Inventor： Seung-eon Ahn ,  I-hun Song ,  Sang-hun Jeon ,  Young Kim ,  Yong-woo Jeon ,  Chang-jung Kim

IPC: H01L27/146 ,  G06F3/041 ,  G06F3/042

CPC classification number: H01L27/14609 ,  G06F3/0412 ,  G06F3/0421 ,  G06F2203/04103

Abstract: In one embodiment, a light-sensing apparatus includes a light-sensing pixel array that has a plurality of light-sensing pixels arranged in rows and columns; and a gate driver configured to provide the light-sensing pixels with a gate voltage and a reset signal that have inverted phases. Each of the light-sensing pixels includes a light sensor transistor configured to sense light and a switch transistor configured to output a light-sensing signal from the light-sensor transistor. The gate driver includes a plurality of gate lines connected to gates of the switch transistors, a plurality of reset lines connected to gates of the light sensor transistors, and a plurality of phase inverters each connected between a corresponding reset line and a gate line. Thus, when a gate voltage is applied to one of the plurality of gate lines, a reset signal with an inversed phase to the gate voltage may be applied to a corresponding reset line.

Abstract translation: 在一个实施例中，光感测装置包括具有排列成行和列的多个感光像素的感光像素阵列; 以及栅极驱动器，被配置为向所述感光像素提供具有反相的栅极电压和复位信号。 每个感光像素包括被配置为感测光的光传感器晶体管和被配置为输出来自光传感器晶体管的光感测信号的开关晶体管。 栅极驱动器包括连接到开关晶体管的栅极的多个栅极线，连接到光传感器晶体管的栅极的多个复位线，以及各自连接在相应的复位线和栅极线之间的多个相位逆变器。 因此，当栅极电压施加到多条栅极线中的一条栅极线时，具有与栅极电压相反的相位的复位信号可被施加到相应的复位线。

公开(公告)号：US09209337B2

公开(公告)日：2015-12-08

申请号：US13607019

申请日：2012-09-07

Applicant: Sang-hun Jeon ,  I-hun Song ,  Seung-eon Ahn

Inventor： Sang-hun Jeon ,  I-hun Song ,  Seung-eon Ahn

IPC: G06F3/042 ,  H01L31/113 ,  H01L31/032 ,  G01J1/42 ,  G01J1/44

CPC classification number: H01L31/1136 ,  G01J1/42 ,  G01J2001/4473 ,  G06F3/0421 ,  G06F2203/04103 ,  H01L31/032

Abstract: Photosensing transistors, display panels employing a photosensing transistor, and methods of manufacturing the same, include a gate layer, a gate insulation layer on the gate layer, a channel layer on the gate insulation layer, an etch stop layer on a partial area of the channel layer, a source and a drain on the channel layer and separated from each other with the etch stop layer being interposed between the source and the drain, and a passivation layer covering the source, the drain, and the etch stop layer, wherein the source is separated from the etch stop layer.

Abstract translation: 采用光敏晶体管的感光晶体管，显示面板及其制造方法包括栅极层，栅极层上的栅极绝缘层，栅极绝缘层上的沟道层，位于栅极绝缘层的局部区域上的蚀刻停止层 沟道层，沟道层上的源极和漏极，并且彼此分离，蚀刻停止层插入在源极和漏极之间，以及钝化层，覆盖源极，漏极和蚀刻停止层，其中， 源与蚀刻停止层分离。

公开(公告)号：US08970553B2

公开(公告)日：2015-03-03

申请号：US12926922

申请日：2010-12-17

Applicant: Sung-ho Park ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon ,  Seung-eon Ahn

Inventor： Sung-ho Park ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon ,  Seung-eon Ahn

IPC: G06F19/00 ,  H01L27/146 ,  G09G3/36 ,  H04N5/3745 ,  G09G3/34 ,  G01J1/44 ,  G06F3/0354 ,  G06F3/038 ,  G06F3/041 ,  H01L27/12 ,  H01L31/113

CPC classification number: H01L27/14681 ,  G01J1/44 ,  G06F3/03542 ,  G06F3/03545 ,  G06F3/0386 ,  G06F3/0412 ,  G09G3/3406 ,  G09G3/3648 ,  G09G3/3696 ,  G09G2320/043 ,  G09G2320/0626 ,  H01L27/1225 ,  H01L27/14609 ,  H01L31/1136 ,  H04N5/3745

Abstract: Example embodiments are directed to light sensing circuits having a relatively simpler structure by using light-sensitive oxide semiconductor transistors as light sensing devices, and remote optical touch panels and image acquisition apparatuses, each including the light sensing circuits. The light sensing circuit includes a light-sensitive oxide semiconductor transistor in each pixel, wherein the light-sensitive oxide semiconductor transistor is configured as a light sensing device, and a driving circuit that outputs data. The light sensing circuit may have a relatively simple circuit structure including a plurality of transistors in one pixel. As a result, the structure and operation of the light sensing circuit may be simplified.

Abstract translation: 示例性实施例涉及具有通过使用光敏氧化物半导体晶体管作为光感测装置的相对简单的结构的光感测电路，以及每个包括光感测电路的远程光学触摸面板和图像采集装置。 光感测电路在每个像素中包括光敏氧化物半导体晶体管，其中光敏氧化物半导体晶体管被配置为光感测装置，以及输出数据的驱动电路。 光感测电路可以具有包括一个像素中的多个晶体管的相对简单的电路结构。 结果，可以简化光感测电路的结构和操作。

公开(公告)号：US08704148B2

公开(公告)日：2014-04-22

申请号：US13358862

申请日：2012-01-26

Applicant: Sang-hun Jeon ,  I-hun Song ,  Seung-eon Ahn ,  Chang-jung Kim ,  Young Kim

Inventor： Sang-hun Jeon ,  I-hun Song ,  Seung-eon Ahn ,  Chang-jung Kim ,  Young Kim

IPC: H01J40/14

CPC classification number: H01L27/14632 ,  H01L27/1446 ,  H01L27/14603 ,  H01L27/14623

Abstract: According to an example embodiment, a light-sensing apparatus may include an array of light-sensing pixels, a first gate driver, and a signal output unit. Each of the light-sensing pixels may include a light sensor transistor configured to sense light, a switch transistor configured to output a light-sensing signal from the light sensor transistor, and a conductive light-shielding film on a light-incident surface of the switch transistor. The light sensor transistor and the switch transistor may have the same oxide semiconductor transistor structure. The first gate driver may be configured to provide a gate voltage and a negative bias voltage to each of the light-sensing pixels. The signal output unit may be configured to receive the light-sensing signal from each of the light-sensing pixels and output a data signal.

Abstract translation: 根据示例实施例，光感测装置可以包括光感测像素阵列，第一栅极驱动器和信号输出单元。 每个感光像素可以包括被配置为感测光的光传感器晶体管，被配置为从光传感器晶体管输出光感测信号的开关晶体管，以及在所述光传感器晶体管的光入射表面上的导电屏蔽膜 开关晶体管。 光传感器晶体管和开关晶体管可以具有相同的氧化物半导体晶体管结构。 第一栅极驱动器可以被配置为向每个感光像素提供栅极电压和负的偏置电压。 信号输出单元可以被配置为从每个感光像素接收光感测信号并输出​​数据信号。

公开(公告)号：US08634011B2

公开(公告)日：2014-01-21

申请号：US12923924

申请日：2010-10-14

Applicant: Ji-hyun Hur ,  Sung-ho Park ,  I-hun Song ,  Sang-hun Jeon

Inventor： Ji-hyun Hur ,  Sung-ho Park ,  I-hun Song ,  Sang-hun Jeon

IPC: H04N5/335

CPC classification number: H01L27/14601 ,  H01L27/14645 ,  H01L31/0264

Abstract: Provided are an image sensor using a light-sensitive oxide semiconductor material as a light-sensitive device and a method of operating the image sensor for acquiring RGB values of incident light in the image sensor, the image sensor includes an array of a plurality of light-sensing cells wherein each of the light-sensing cells includes a light-sensitive oxide semiconductor layer that forms a channel region of an oxide semiconductor transistor. Electronic characteristics of the light-sensitive oxide semiconductor layer vary according to an amount of light irradiated onto the light-sensitive oxide semiconductor layer. Each of the light-sensing cells constitutes a single unit color pixel.

Abstract translation: 提供了使用感光氧化物半导体材料作为感光装置的图像传感器和操作用于获取图像传感器中的入射光的RGB值的图像传感器的方法，图像传感器包括多个光的阵列 其中每个感光单元包括形成氧化物半导体晶体管的沟道区的光敏氧化物半导体层。 光敏氧化物半导体层的电子特性根据照射到光敏氧化物半导体层上的光量而变化。 每个感光单元构成单个单色彩像素。