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51 条记录 (耗时 0.027 秒)

    DISPLAY DEVICE HAVING TOUCH PANEL
    21.
    发明申请
    DISPLAY DEVICE HAVING TOUCH PANEL 有权
    具有触控面板的显示设备

    公开(公告)号：US20120044662A1

    公开(公告)日：2012-02-23

    申请号：US13209169

    申请日：2011-08-12

    申请人： Jong-Hyuk KIM ,  Joong-Lok SONG

    发明人： Jong-Hyuk KIM ,  Joong-Lok SONG

    IPC分类号： H05K9/00

    CPC分类号： G06F3/0418 ,  G06F3/044 ,  G06F2203/04107

    摘要： A display device having a touch panel which effectively intercepts noise generated from a display panel to prevent the touch panel from malfunctioning. The display device having the touch panel includes a display panel, a touch panel attached to the display panel through an adhesion layer, a noise interception layer over an entire rear surface of the touch panel to prevent electrical noise from the display panel from being introduced into the touch panel, a metal ring pattern on the noise interception layer to surround the edge of the noise interception layer and having lower electrical resistance than the noise interception layer, and a ground terminal electrically connected to the noise interception layer and the metal ring pattern.

    摘要翻译： 一种具有触摸面板的显示装置，其有效地拦截从显示面板产生的噪声，以防止触摸面板发生故障。 具有触摸面板的显示装置包括显示面板，通过粘合层附着到显示面板的触摸面板，在触摸面板的整个后表面上的噪声截取层，以防止来自显示面板的电噪声被引入 所述触摸面板，所述噪声截取层上的围绕所述噪声截取层的边缘并且具有比所述噪声截取层更低的电阻的金属环图案，以及电连接到所述噪声截取层和所述金属环图案的接地端子。

    Non-volatile memory devices including etching protection layers and methods of forming the same
    24.
    发明授权
    Non-volatile memory devices including etching protection layers and methods of forming the same 有权
    包括蚀刻保护层的非易失性存储器件及其形成方法

    公开(公告)号：US07589375B2

    公开(公告)日：2009-09-15

    申请号：US11642297

    申请日：2006-12-20

    申请人： Jae-Hoon Jang ,  Soon-Moon Jung ,  Jong-Hyuk Kim ,  Young-Seop Rah ,  Han-Byung Park

    发明人： Jae-Hoon Jang ,  Soon-Moon Jung ,  Jong-Hyuk Kim ,  Young-Seop Rah ,  Han-Byung Park

    IPC分类号： H01L27/115

    CPC分类号： H01L27/11 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/1116

    摘要： A non-volatile memory device includes a semiconductor substrate including a cell array region and a peripheral circuit region. A first cell unit is on the semiconductor substrate in the cell array region, and a cell insulating layer is on the first cell unit. A first active body layer is in the cell insulating layer and over the first cell unit, and a second cell unit is on the first active body layer. The device further includes a peripheral transistor on the semiconductor substrate in the peripheral circuit region. The peripheral transistor has a gate pattern and source/drain regions, and a metal silicide layer is on the gate pattern and/or on the source/drain regions of the peripheral transistor. A peripheral insulating layer is on the metal silicide layer and the peripheral transistor, and an etching protection layer is between the cell insulating layer and the peripheral insulating layer and between the metal silicide layer and the peripheral insulating layer.

    摘要翻译： 非易失性存储器件包括包括单元阵列区域和外围电路区域的半导体衬底。 第一单元单元位于单元阵列区域中的半导体基板上，单元绝缘层位于第一单元单元上。 第一有源体层位于单元绝缘层中并在第一单元单元上，第二单元单元位于第一活性体层上。 该器件还包括在外围电路区域中的半导体衬底上的外围晶体管。 外围晶体管具有栅极图案和源极/漏极区域，并且金属硅化物层位于外围晶体管的栅极图案和/或源极/漏极区域上。 外围绝缘层位于金属硅化物层和外围晶体管上，蚀刻保护层位于电池绝缘层和外围绝缘层之间以及金属硅化物层和外围绝缘层之间。

    Non-volatile memory devices including etching protection layers and methods of forming the same
    27.
    发明申请
    Non-volatile memory devices including etching protection layers and methods of forming the same 有权
    包括蚀刻保护层的非易失性存储器件及其形成方法

    公开(公告)号：US20070096197A1

    公开(公告)日：2007-05-03

    申请号：US11642297

    申请日：2006-12-20

    申请人： Jae-Hoon Jang ,  Soon-Moon Jung ,  Jong-Hyuk Kim ,  Young-Seop Rah ,  Han-Byung Park

    发明人： Jae-Hoon Jang ,  Soon-Moon Jung ,  Jong-Hyuk Kim ,  Young-Seop Rah ,  Han-Byung Park

    IPC分类号： H01L29/788 ,  H01L21/336

    CPC分类号： H01L27/11 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/1116

    摘要： A non-volatile memory device includes a semiconductor substrate including a cell array region and a peripheral circuit region. A first cell unit is on the semiconductor substrate in the cell array region, and a cell insulating layer is on the first cell unit. A first active body layer is in the cell insulating layer and over the first cell unit, and a second cell unit is on the first active body layer. The device further includes a peripheral transistor on the semiconductor substrate in the peripheral circuit region. The peripheral transistor has a gate pattern and source/drain regions, and a metal silicide layer is on the gate pattern and/or on the source/drain regions of the peripheral transistor. A peripheral insulating layer is on the metal silicide layer and the peripheral transistor, and an etching protection layer is between the cell insulating layer and the peripheral insulating layer and between the metal silicide layer and the peripheral insulating layer.

    摘要翻译： 非易失性存储器件包括包括单元阵列区域和外围电路区域的半导体衬底。 第一单元单元位于单元阵列区域中的半导体基板上，单元绝缘层位于第一单元单元上。 第一有源体层位于单元绝缘层中并在第一单元单元上，第二单元单元位于第一活性体层上。 该器件还包括在外围电路区域中的半导体衬底上的外围晶体管。 外围晶体管具有栅极图案和源极/漏极区域，并且金属硅化物层位于外围晶体管的栅极图案和/或源极/漏极区域上。 外围绝缘层位于金属硅化物层和外围晶体管上，蚀刻保护层位于电池绝缘层和外围绝缘层之间以及金属硅化物层和外围绝缘层之间。

    Dual damascene structure and methods of forming the same
    29.
    发明申请
    Dual damascene structure and methods of forming the same 失效
    双镶嵌结构及其形成方法

    公开(公告)号：US20060163738A1

    公开(公告)日：2006-07-27

    申请号：US11333110

    申请日：2006-01-17

    申请人： Jun Seo ,  Jong-Hyuk Kim ,  Jong-Heui Song ,  Yung-Jun Kim ,  Min-Chul Chae

    发明人： Jun Seo ,  Jong-Hyuk Kim ,  Jong-Heui Song ,  Yung-Jun Kim ,  Min-Chul Chae

    IPC分类号： H01L23/48

    CPC分类号： H01L21/76876 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/28525 ,  H01L21/28562 ,  H01L21/76808 ,  H01L21/76831 ,  H01L21/76879 ,  H01L21/76895 ,  H01L29/66477 ,  Y10T428/24331

    摘要： A dual damascene structure and a method of forming a dual damascene structure are disclosed. The dual damascene structure includes an insulation member, a single crystal member and a filling member. The insulation member has an opening having a dual damascene shape. The filling member is formed on a side face of the opening. The single crystal member contacts the filling member. The single crystal member fills up the opening. In order to form a dual damascene structure, an insulating member having an opening partially filled with a preliminary single crystal member is formed. The filling member is formed on a side face of the opening. The preliminary single crystal member epitaxially grows to fill up the opening. Because the filling member is positioned between the single crystal member and the insulation member, void formation may be reduced between the single crystal member and the insulation member.

    摘要翻译： 公开了一种双镶嵌结构和形成双镶嵌结构的方法。 双镶嵌结构包括绝缘构件，单晶构件和填充构件。 绝缘构件具有双镶嵌形状的开口。 填充构件形成在开口的侧面上。 单晶构件接触填充构件。 单晶构件填充开口。 为了形成双镶嵌结构，形成具有部分填充有初级单晶构件的开口的绝缘构件。 填充构件形成在开口的侧面上。 外延的初步单晶构件生长以填满开口。 由于填充构件位于单晶构件和绝缘构件之间，所以在单晶构件和绝缘构件之间可能会减小空隙形成。

    Cylinder head cover structure of hermetic motor-driving type compressor
    30.
    发明授权
    Cylinder head cover structure of hermetic motor-driving type compressor 失效
    密封电机驱动型压缩机气缸盖盖结构

    公开(公告)号：US06641374B2

    公开(公告)日：2003-11-04

    申请号：US10005046

    申请日：2001-12-04

    申请人： Jong Hyuk Kim

    发明人： Jong Hyuk Kim

    IPC分类号： F04B3900

    CPC分类号： F04B39/125 ,  Y10S181/403

    摘要： In a head cover structure of a hermetic motor-driving type compressor, by comprising a front head cover having a space divided into a low-pressure side sucking a refrigerant by being installed a suction muffler and a high-pressure side discharging the refrigerant by an enclosure wall and a rear head cover combined to the rear surface of the front head cover and having a space divided into a low-pressure side and a high-pressure side by an enclosure wall, a flatness of the front head cover can be improved, leakage of a refrigerant gas from the high-pressure side can be prevented, and the cost of materials can be reduced by using an inexpensive steel material.

    摘要翻译： 在密封电动机驱动型压缩机的顶盖结构中，包括：前盖罩，其具有通过设置吸入消声器和高压侧排出制冷剂的高压侧而分隔成吸入制冷剂的低压侧的空间 封闭壁和后盖组合到前盖盖的后表面，并且具有通过封闭壁分成低压侧和高压侧的空间，可以提高前盖盖的平坦度， 可以防止制冷剂气体从高压侧的泄漏，并且通过使用便宜的钢材料可以降低材料的成本。