Method for forming semiconductor device having metallization comprising select lines, bit lines and word lines
    6.
    发明授权
    Method for forming semiconductor device having metallization comprising select lines, bit lines and word lines 失效
    用于形成具有包括选择线,位线和字线的金属化的半导体器件的方法

    公开(公告)号:US08034668B2

    公开(公告)日:2011-10-11

    申请号:US12588240

    申请日:2009-10-08

    IPC分类号: H01L21/76

    摘要: A semiconductor device includes a semiconductor substrate including a first region having a cell region and a second region having a peripheral circuit region, first transistors on the semiconductor substrate, a first protective layer covering the first transistors, a first insulation layer on the first protective layer, a semiconductor pattern on the first insulation layer in the first region, second transistors on the semiconductor pattern, a second protective layer covering the second transistors, the second protective layer having a thickness greater than that of the first protective layer, and a second insulation layer on the second protective layer and the first insulation layer of the second region.

    摘要翻译: 半导体器件包括:半导体衬底,包括具有单元区域的第一区域和具有外围电路区域的第二区域;半导体衬底上的第一晶体管;覆盖第一晶体管的第一保护层;第一保护层上的第一绝缘层; ,第一区域中的第一绝缘层上的半导体图案,半导体图案上的第二晶体管,覆盖第二晶体管的第二保护层,第二保护层的厚度大于第一保护层的厚度,第二绝缘层 在第二保护层和第二区域的第一绝缘层上。

    Method for forming semiconductor device having metallization comprising select lines, bit lines and word lines
    7.
    发明授权
    Method for forming semiconductor device having metallization comprising select lines, bit lines and word lines 有权
    用于形成具有包括选择线,位线和字线的金属化的半导体器件的方法

    公开(公告)号:US08399308B2

    公开(公告)日:2013-03-19

    申请号:US13236000

    申请日:2011-09-19

    IPC分类号: H01L21/82

    摘要: A semiconductor device includes a semiconductor substrate including a first region having a cell region and a second region having a peripheral circuit region, first transistors on the semiconductor substrate, a first protective layer covering the first transistors, a first insulation layer on the first protective layer, a semiconductor pattern on the first insulation layer in the first region, second transistors on the semiconductor pattern, a second protective layer covering the second transistors, the second protective layer having a thickness greater than that of the first protective layer, and a second insulation layer on the second protective layer and the first insulation layer of the second region.

    摘要翻译: 半导体器件包括:半导体衬底,包括具有单元区域的第一区域和具有外围电路区域的第二区域;半导体衬底上的第一晶体管;覆盖第一晶体管的第一保护层;第一保护层上的第一绝缘层; ,第一区域中的第一绝缘层上的半导体图案,半导体图案上的第二晶体管,覆盖第二晶体管的第二保护层,第二保护层的厚度大于第一保护层的厚度,第二绝缘层 在第二保护层和第二区域的第一绝缘层上。

    Method for forming semiconductor device having metallization comprising select lines, bit lines and word lines
    8.
    发明申请
    Method for forming semiconductor device having metallization comprising select lines, bit lines and word lines 失效
    用于形成具有包括选择线,位线和字线的金属化的半导体器件的方法

    公开(公告)号:US20100035386A1

    公开(公告)日:2010-02-11

    申请号:US12588240

    申请日:2009-10-08

    IPC分类号: H01L21/768

    摘要: A semiconductor device includes a semiconductor substrate including a first region having a cell region and a second region having a peripheral circuit region, first transistors on the semiconductor substrate, a first protective layer covering the first transistors, a first insulation layer on the first protective layer, a semiconductor pattern on the first insulation layer in the first region, second transistors on the semiconductor pattern, a second protective layer covering the second transistors, the second protective layer having a thickness greater than that of the first protective layer, and a second insulation layer on the second protective layer and the first insulation layer of the second region.

    摘要翻译: 半导体器件包括:半导体衬底,包括具有单元区域的第一区域和具有外围电路区域的第二区域;半导体衬底上的第一晶体管;覆盖第一晶体管的第一保护层;第一保护层上的第一绝缘层; ,第一区域中的第一绝缘层上的半导体图案,半导体图案上的第二晶体管,覆盖第二晶体管的第二保护层,第二保护层的厚度大于第一保护层的厚度,第二绝缘层 在第二保护层和第二区域的第一绝缘层上。

    Semiconductor memory device having metallization comprising select lines, bit lines and word lines
    9.
    发明授权
    Semiconductor memory device having metallization comprising select lines, bit lines and word lines 有权
    具有包括选择线,位线和字线的金属化的半导体存储器件

    公开(公告)号:US07601998B2

    公开(公告)日:2009-10-13

    申请号:US11655115

    申请日:2007-01-19

    IPC分类号: H01L29/80

    摘要: A semiconductor device includes a semiconductor substrate including a first region having a cell region and a second region having a peripheral circuit region, first transistors on the semiconductor substrate, a first protective layer covering the first transistors, a first insulation layer on the first protective layer, a semiconductor pattern on the first insulation layer in the first region, second transistors on the semiconductor pattern, a second protective layer covering the second transistors, the second protective layer having a thickness greater than that of the first protective layer, and a second insulation layer on the second protective layer and the first insulation layer of the second region.

    摘要翻译: 半导体器件包括:半导体衬底,包括具有单元区域的第一区域和具有外围电路区域的第二区域;半导体衬底上的第一晶体管;覆盖第一晶体管的第一保护层;第一保护层上的第一绝缘层; ,第一区域中的第一绝缘层上的半导体图案,半导体图案上的第二晶体管,覆盖第二晶体管的第二保护层,第二保护层的厚度大于第一保护层的厚度,第二绝缘层 在第二保护层和第二区域的第一绝缘层上。

    METHOD FOR FORMING SEMICONDUCTOR DEVICE HAVING METALLIZATION COMPRISING SELECT LINES, BIT LINES AND WORD LINES
    10.
    发明申请
    METHOD FOR FORMING SEMICONDUCTOR DEVICE HAVING METALLIZATION COMPRISING SELECT LINES, BIT LINES AND WORD LINES 有权
    形成包含选择线,位线和字线的金属化的半导体器件的方法

    公开(公告)号:US20120009767A1

    公开(公告)日:2012-01-12

    申请号:US13236000

    申请日:2011-09-19

    IPC分类号: H01L21/20

    摘要: A semiconductor device includes a semiconductor substrate including a first region having a cell region and a second region having a peripheral circuit region, first transistors on the semiconductor substrate, a first protective layer covering the first transistors, a first insulation layer on the first protective layer, a semiconductor pattern on the first insulation layer in the first region, second transistors on the semiconductor pattern, a second protective layer covering the second transistors, the second protective layer having a thickness greater than that of the first protective layer, and a second insulation layer on the second protective layer and the first insulation layer of the second region.

    摘要翻译: 半导体器件包括:半导体衬底,包括具有单元区域的第一区域和具有外围电路区域的第二区域;半导体衬底上的第一晶体管;覆盖第一晶体管的第一保护层;第一保护层上的第一绝缘层; ,第一区域中的第一绝缘层上的半导体图案,半导体图案上的第二晶体管,覆盖第二晶体管的第二保护层,第二保护层的厚度大于第一保护层的厚度,第二绝缘层 在第二保护层和第二区域的第一绝缘层上。